CN1164932A - 用于多单元晶体管的n边多边形单元布线 - Google Patents
用于多单元晶体管的n边多边形单元布线 Download PDFInfo
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- CN1164932A CN1164932A CN95195456A CN95195456A CN1164932A CN 1164932 A CN1164932 A CN 1164932A CN 95195456 A CN95195456 A CN 95195456A CN 95195456 A CN95195456 A CN 95195456A CN 1164932 A CN1164932 A CN 1164932A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1087—Substrate region of field-effect devices of field-effect transistors with insulated gate characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
指形(梯形)布线 | N边多边形布线 | |
W/L(微米) | 720/0.8 | 720/0.8 |
布线面积(平方微米) | 112×100 | 110×74 |
Claims (13)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US41963795A | 1995-04-06 | 1995-04-06 | |
US08/419,637 | 1995-04-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1164932A true CN1164932A (zh) | 1997-11-12 |
CN1099713C CN1099713C (zh) | 2003-01-22 |
Family
ID=23663090
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN95195456A Expired - Lifetime CN1099713C (zh) | 1995-04-06 | 1995-12-08 | 用n边多边形单元布线的mos单元、多单元晶体管及ic芯片 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5852315A (zh) |
JP (1) | JP3121618B2 (zh) |
CN (1) | CN1099713C (zh) |
DE (1) | DE19581809B4 (zh) |
WO (1) | WO1996031907A1 (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102201446A (zh) * | 2011-05-10 | 2011-09-28 | 上海先进半导体制造股份有限公司 | 用于防静电保护的栅极接地的nmos单元及其防静电保护结构 |
CN101911301B (zh) * | 2007-12-17 | 2013-01-02 | 马维尔国际贸易有限公司 | 具有低导通电阻的mos器件 |
CN104517962A (zh) * | 2013-09-30 | 2015-04-15 | 台达电子工业股份有限公司 | 半导体装置 |
CN110470409A (zh) * | 2019-08-02 | 2019-11-19 | 上海申矽凌微电子科技有限公司 | 易于集成的远端温度测量系统 |
CN110534512A (zh) * | 2019-09-07 | 2019-12-03 | 电子科技大学 | 一种抗闩锁版图结构 |
CN116344530A (zh) * | 2021-12-24 | 2023-06-27 | 长鑫存储技术有限公司 | 晶体管单元及其阵列、集成电路 |
Families Citing this family (47)
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US6140687A (en) * | 1996-11-28 | 2000-10-31 | Matsushita Electric Industrial Co., Ltd. | High frequency ring gate MOSFET |
TW377493B (en) * | 1996-12-27 | 1999-12-21 | Matsushita Electric Ind Co Ltd | Semiconductor integrated circuit device |
US6002156A (en) | 1997-09-16 | 1999-12-14 | Winbond Electronics Corp. | Distributed MOSFET structure with enclosed gate for improved transistor size/layout area ratio and uniform ESD triggering |
US6097066A (en) * | 1997-10-06 | 2000-08-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electro-static discharge protection structure for semiconductor devices |
US5847431A (en) * | 1997-12-18 | 1998-12-08 | Intel Corporation | Reduced capacitance transistor with electro-static discharge protection structure |
JPH11204729A (ja) * | 1998-01-12 | 1999-07-30 | Mitsubishi Electric Corp | 半導体装置 |
TW451451B (en) * | 1999-10-02 | 2001-08-21 | Winbond Electronics Corp | Circular silicon controlled rectifier device |
US6750517B1 (en) | 2000-11-06 | 2004-06-15 | Taiwan Semiconductor Manufacturing Company | Device layout to improve ESD robustness in deep submicron CMOS technology |
US6448123B1 (en) * | 2001-02-20 | 2002-09-10 | Taiwan Semiconductor Manufacturing Company | Low capacitance ESD protection device |
JP5172056B2 (ja) * | 2001-06-04 | 2013-03-27 | ラピスセミコンダクタ株式会社 | 半導体装置 |
US6770938B1 (en) | 2002-01-16 | 2004-08-03 | Advanced Micro Devices, Inc. | Diode fabrication for ESD/EOS protection |
JP3524908B2 (ja) * | 2002-01-21 | 2004-05-10 | 株式会社半導体理工学研究センター | 半導体装置 |
US6734504B1 (en) | 2002-04-05 | 2004-05-11 | Cypress Semiconductor Corp. | Method of providing HBM protection with a decoupled HBM structure |
US20030202307A1 (en) * | 2002-04-26 | 2003-10-30 | Kei-Kang Hung | Semiconductor device with ESD protection |
US7179691B1 (en) * | 2002-07-29 | 2007-02-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for four direction low capacitance ESD protection |
US6818955B1 (en) | 2003-04-09 | 2004-11-16 | Marvell International Ltd. | Electrostatic discharge protection |
US6987301B1 (en) | 2003-04-09 | 2006-01-17 | Marvell International Ltd. | Electrostatic discharge protection |
JP4631315B2 (ja) * | 2004-06-02 | 2011-02-16 | 株式会社デンソー | トランジスタ |
JP4781783B2 (ja) * | 2005-10-31 | 2011-09-28 | エルピーダメモリ株式会社 | 半導体記憶装置 |
DE102006028721B3 (de) * | 2006-06-20 | 2007-11-29 | Atmel Germany Gmbh | Halbleiterschutzstruktur für eine elektrostatische Entladung |
JP5360829B2 (ja) * | 2006-12-28 | 2013-12-04 | マーベル ワールド トレード リミテッド | 低オン抵抗のmosデバイス配置 |
US7932552B2 (en) * | 2007-08-03 | 2011-04-26 | International Business Machines Corporation | Multiple source-single drain field effect semiconductor device and circuit |
US20090033389A1 (en) | 2007-08-03 | 2009-02-05 | Abadeer Wagdi W | Micro-phase adjusting and micro-phase adjusting mixer circuits designed with standard field effect transistor structures |
US7814449B2 (en) * | 2007-10-17 | 2010-10-12 | International Business Machines Corporation | Design structure for multiple source-single drain field effect semiconductor device and circuit |
CN101888085B (zh) * | 2009-05-11 | 2012-11-28 | 晶致半导体股份有限公司 | 具有esd的马达控制芯片 |
CA2769940C (en) | 2009-08-04 | 2016-04-26 | Gan Systems Inc. | Island matrixed gallium nitride microwave and power switching transistors |
US9818857B2 (en) | 2009-08-04 | 2017-11-14 | Gan Systems Inc. | Fault tolerant design for large area nitride semiconductor devices |
US9029866B2 (en) | 2009-08-04 | 2015-05-12 | Gan Systems Inc. | Gallium nitride power devices using island topography |
US20110068410A1 (en) * | 2009-09-18 | 2011-03-24 | Garnett Martin E | Silicon die floorplan with application to high-voltage field effect transistors |
JP5398841B2 (ja) | 2009-09-29 | 2014-01-29 | 株式会社東芝 | 電力増幅器 |
US8134205B2 (en) * | 2010-01-06 | 2012-03-13 | Ptek Technology Co., Ltd. | Layout structure of power MOS transistor |
JP2011159755A (ja) * | 2010-01-29 | 2011-08-18 | Sanyo Electric Co Ltd | 半導体装置 |
CA2796155C (en) * | 2010-04-13 | 2013-11-05 | Gan Systems Inc. | High density gallium nitride devices using island topology |
JP5269017B2 (ja) | 2010-09-13 | 2013-08-21 | 株式会社東芝 | 電力増幅器 |
USD701843S1 (en) * | 2010-12-28 | 2014-04-01 | Sumitomo Electric Industries, Ltd. | Semiconductor device |
CN102142439A (zh) * | 2010-12-30 | 2011-08-03 | 苏州华芯微电子股份有限公司 | 驱动芯片的版图结构 |
FR2974685A1 (fr) * | 2011-04-27 | 2012-11-02 | St Microelectronics Sa | Dispositif semi-conducteur de protection contres des décharges électrostatiques, en particulier du type modèle composant charge (cdm) |
US9324845B2 (en) | 2012-12-11 | 2016-04-26 | Infineon Technologies Ag | ESD protection structure, integrated circuit and semiconductor device |
US9716016B2 (en) * | 2012-12-20 | 2017-07-25 | Taiwan Semiconductor Manufacturing Company Limited | Electrostatic discharge (ESD) clamp |
US9275986B2 (en) | 2013-11-14 | 2016-03-01 | Infineon Technologies Ag | Transistor and tunable inductance |
JP2016072313A (ja) * | 2014-09-29 | 2016-05-09 | 日亜化学工業株式会社 | 電界効果トランジスタ |
GB201418752D0 (en) * | 2014-10-22 | 2014-12-03 | Rolls Royce Plc | Lateral field effect transistor device |
US10403624B2 (en) | 2017-05-26 | 2019-09-03 | Stmicroelectronics Design And Application S.R.O. | Transistors with octagon waffle gate patterns |
US10147796B1 (en) * | 2017-05-26 | 2018-12-04 | Stmicroelectronics Design And Application S.R.O. | Transistors with dissimilar square waffle gate patterns |
US10811497B2 (en) | 2018-04-17 | 2020-10-20 | Silanna Asia Pte Ltd | Tiled lateral BJT |
US11664431B2 (en) * | 2021-01-08 | 2023-05-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Ring transistor structure |
GB202403255D0 (en) | 2024-03-06 | 2024-04-17 | Cambridge Gan Devices Ltd | Hexagonal hemt layout |
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-
1995
- 1995-12-08 DE DE19581809T patent/DE19581809B4/de not_active Expired - Lifetime
- 1995-12-08 WO PCT/US1995/016170 patent/WO1996031907A1/en active Application Filing
- 1995-12-08 JP JP08530269A patent/JP3121618B2/ja not_active Expired - Lifetime
- 1995-12-08 CN CN95195456A patent/CN1099713C/zh not_active Expired - Lifetime
-
1997
- 1997-02-25 US US08/803,916 patent/US5852315A/en not_active Expired - Lifetime
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101911301B (zh) * | 2007-12-17 | 2013-01-02 | 马维尔国际贸易有限公司 | 具有低导通电阻的mos器件 |
CN102201446A (zh) * | 2011-05-10 | 2011-09-28 | 上海先进半导体制造股份有限公司 | 用于防静电保护的栅极接地的nmos单元及其防静电保护结构 |
WO2012152092A1 (zh) * | 2011-05-10 | 2012-11-15 | 上海先进半导体制造股份有限公司 | 用于防静电保护的栅极接地的nmos单元及其防静电保护结构 |
CN104517962A (zh) * | 2013-09-30 | 2015-04-15 | 台达电子工业股份有限公司 | 半导体装置 |
CN104517962B (zh) * | 2013-09-30 | 2017-08-25 | 台达电子工业股份有限公司 | 半导体装置 |
CN110470409A (zh) * | 2019-08-02 | 2019-11-19 | 上海申矽凌微电子科技有限公司 | 易于集成的远端温度测量系统 |
CN110534512A (zh) * | 2019-09-07 | 2019-12-03 | 电子科技大学 | 一种抗闩锁版图结构 |
CN116344530A (zh) * | 2021-12-24 | 2023-06-27 | 长鑫存储技术有限公司 | 晶体管单元及其阵列、集成电路 |
Also Published As
Publication number | Publication date |
---|---|
JP3121618B2 (ja) | 2001-01-09 |
WO1996031907A1 (en) | 1996-10-10 |
CN1099713C (zh) | 2003-01-22 |
DE19581809T1 (de) | 1997-11-27 |
DE19581809B4 (de) | 2008-12-24 |
US5852315A (en) | 1998-12-22 |
JPH10507038A (ja) | 1998-07-07 |
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