CN116235282A - 半导体基板清洗用组合物和清洗方法 - Google Patents

半导体基板清洗用组合物和清洗方法 Download PDF

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Publication number
CN116235282A
CN116235282A CN202180065750.5A CN202180065750A CN116235282A CN 116235282 A CN116235282 A CN 116235282A CN 202180065750 A CN202180065750 A CN 202180065750A CN 116235282 A CN116235282 A CN 116235282A
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CN
China
Prior art keywords
group
semiconductor substrate
elements
hydrogen peroxide
cleaning
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Pending
Application number
CN202180065750.5A
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English (en)
Chinese (zh)
Inventor
堀江宏彰
堀田明伸
浜中谅
岛田宪司
菊永孝裕
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Mitsubishi Gas Chemical Co Inc
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Mitsubishi Gas Chemical Co Inc
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Publication of CN116235282A publication Critical patent/CN116235282A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3902—Organic or inorganic per-compounds combined with specific additives
    • C11D3/3937—Stabilising agents
    • C11D3/394—Organic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3942—Inorganic per-compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/044—Hydroxides or bases
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/36—Organic compounds containing phosphorus
    • C11D3/361—Phosphonates, phosphinates or phosphonites
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3902—Organic or inorganic per-compounds combined with specific additives
    • C11D3/3937—Stabilising agents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3947—Liquid compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/06—Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/36—Organic compounds containing phosphorus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
CN202180065750.5A 2020-09-29 2021-09-22 半导体基板清洗用组合物和清洗方法 Pending CN116235282A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202063084613P 2020-09-29 2020-09-29
US63/084,613 2020-09-29
US202163196417P 2021-06-03 2021-06-03
US63/196,417 2021-06-03
PCT/JP2021/034850 WO2022071069A1 (ja) 2020-09-29 2021-09-22 半導体基板洗浄用組成物及び洗浄方法

Publications (1)

Publication Number Publication Date
CN116235282A true CN116235282A (zh) 2023-06-06

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ID=80950154

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180065750.5A Pending CN116235282A (zh) 2020-09-29 2021-09-22 半导体基板清洗用组合物和清洗方法

Country Status (8)

Country Link
US (1) US20230365893A1 (enrdf_load_stackoverflow)
EP (1) EP4207250A4 (enrdf_load_stackoverflow)
JP (1) JPWO2022071069A1 (enrdf_load_stackoverflow)
KR (1) KR20230075433A (enrdf_load_stackoverflow)
CN (1) CN116235282A (enrdf_load_stackoverflow)
IL (1) IL301654A (enrdf_load_stackoverflow)
TW (1) TW202225393A (enrdf_load_stackoverflow)
WO (1) WO2022071069A1 (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202440897A (zh) 2023-02-16 2024-10-16 日商三菱瓦斯化學股份有限公司 半導體基板清洗用組成物及使用其之清洗方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015156171A1 (ja) * 2014-04-10 2015-10-15 三菱瓦斯化学株式会社 半導体素子の洗浄用液体組成物、および半導体素子の洗浄方法
CN105683336A (zh) * 2013-06-06 2016-06-15 高级技术材料公司 用于选择性蚀刻氮化钛的组合物和方法
US20170101607A1 (en) * 2015-10-08 2017-04-13 Mitsubishi Gas Chemical Company, Inc. Liquid composition for cleaning semiconductor device, method for cleaning semiconductor device, and method for fabricating semiconductor device
US20200035485A1 (en) * 2018-07-26 2020-01-30 Versum Materials Us, Llc Composition For TiN Hard Mask Removal And Etch Residue Cleaning

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69601244T2 (de) * 1995-04-17 1999-07-08 Eastman Kodak Co., Rochester, N.Y. Stabilisierte Peroxid-Bleichlösungen und deren Verwendung zur Verarbeitung von photographischen Elementen
JP4300400B2 (ja) 2003-01-07 2009-07-22 三菱瓦斯化学株式会社 レジスト剥離液組成物
JP4286049B2 (ja) 2003-04-11 2009-06-24 花王株式会社 電子基板の製造方法
KR101132533B1 (ko) * 2003-10-29 2012-04-03 아반토르 퍼포먼스 머티리얼스, 인크. 알칼리성, 플라즈마 에칭/애싱 후 잔류물 제거제 및금속-할라이드 부식 억제제를 함유한 포토레지스트스트리핑 조성물
JP4586366B2 (ja) 2004-01-14 2010-11-24 パナソニック電工株式会社 ジェットバスポンプシステム
DE102005038414A1 (de) 2005-08-12 2007-02-15 Basf Aktiengesellschaft Stabilisierte Ätzlösungen zum Ätzen von Cu- und Cu/Ni-Schicht
CN101366107B (zh) 2005-10-05 2011-08-24 高级技术材料公司 用于除去蚀刻后残余物的含水氧化清洗剂
JP5347237B2 (ja) 2007-05-15 2013-11-20 三菱瓦斯化学株式会社 洗浄用組成物
JP5182612B2 (ja) 2007-11-12 2013-04-17 凸版印刷株式会社 エッチング液及び該エッチング液を用いた配線基板の製造方法
JP2009041112A (ja) 2008-10-16 2009-02-26 Hitachi Chem Co Ltd 銅のエッチング液およびそれを用いたプリント配線板の製造方法
JP5676908B2 (ja) 2010-04-21 2015-02-25 上村工業株式会社 プリント配線基板の表面処理方法及び表面処理剤
JP2013199702A (ja) 2012-02-24 2013-10-03 Mitsubishi Shindoh Co Ltd 銅或いは銅基合金表面の酸化皮膜の除去方法
JP6329909B2 (ja) 2011-12-28 2018-05-23 インテグリス・インコーポレーテッド 窒化チタンを選択的にエッチングするための組成物および方法
JP6324101B2 (ja) 2014-02-21 2018-05-16 株式会社ゼンリン 旅行時間データ調製装置、旅行時間データ調製方法およびプログラム
JP6516214B2 (ja) 2015-03-20 2019-05-22 パナソニックＩｐマネジメント株式会社 多層膜用エッチング液とエッチング濃縮液およびエッチング方法
US9976111B2 (en) 2015-05-01 2018-05-22 Versum Materials Us, Llc TiN hard mask and etch residual removal
JP6337922B2 (ja) 2015-08-03 2018-06-06 三菱瓦斯化学株式会社 銅層およびチタン層を含む多層薄膜をエッチングするためのエッチング液およびこれを用いたエッチング方法、並びに該エッチング方法を用いて得られた基板
TWI816635B (zh) 2015-10-15 2023-10-01 日商三菱瓦斯化學股份有限公司 半導體元件之洗淨用液體組成物、半導體元件之洗淨方法及半導體元件之製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105683336A (zh) * 2013-06-06 2016-06-15 高级技术材料公司 用于选择性蚀刻氮化钛的组合物和方法
WO2015156171A1 (ja) * 2014-04-10 2015-10-15 三菱瓦斯化学株式会社 半導体素子の洗浄用液体組成物、および半導体素子の洗浄方法
CN105210176A (zh) * 2014-04-10 2015-12-30 三菱瓦斯化学株式会社 半导体元件的清洗用液体组合物、和半导体元件的清洗方法
US20170101607A1 (en) * 2015-10-08 2017-04-13 Mitsubishi Gas Chemical Company, Inc. Liquid composition for cleaning semiconductor device, method for cleaning semiconductor device, and method for fabricating semiconductor device
US20200035485A1 (en) * 2018-07-26 2020-01-30 Versum Materials Us, Llc Composition For TiN Hard Mask Removal And Etch Residue Cleaning

Also Published As

Publication number Publication date
IL301654A (en) 2023-05-01
WO2022071069A1 (ja) 2022-04-07
KR20230075433A (ko) 2023-05-31
US20230365893A1 (en) 2023-11-16
JPWO2022071069A1 (enrdf_load_stackoverflow) 2022-04-07
EP4207250A4 (en) 2024-10-09
EP4207250A1 (en) 2023-07-05
TW202225393A (zh) 2022-07-01

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