CN116103752A - 高纯SiC晶体的制造方法 - Google Patents

高纯SiC晶体的制造方法 Download PDF

Info

Publication number
CN116103752A
CN116103752A CN202211396415.6A CN202211396415A CN116103752A CN 116103752 A CN116103752 A CN 116103752A CN 202211396415 A CN202211396415 A CN 202211396415A CN 116103752 A CN116103752 A CN 116103752A
Authority
CN
China
Prior art keywords
sic
conductive heating
heating element
source precursor
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202211396415.6A
Other languages
English (en)
Chinese (zh)
Inventor
金佳福
姜秉昶
朴秉铉
田埈基
郑昌垣
全昇安
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OCI Holdings Co Ltd
Original Assignee
OCI Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by OCI Co Ltd filed Critical OCI Co Ltd
Publication of CN116103752A publication Critical patent/CN116103752A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C01B32/963—Preparation from compounds containing silicon
    • C01B32/97—Preparation from SiO or SiO2
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C01B32/963—Preparation from compounds containing silicon
    • C01B32/977—Preparation from organic compounds containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0209—Pretreatment of the material to be coated by heating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
    • C30B28/14—Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN202211396415.6A 2021-11-11 2022-11-09 高纯SiC晶体的制造方法 Pending CN116103752A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2021-0155113 2021-11-11
KR20210155113 2021-11-11

Publications (1)

Publication Number Publication Date
CN116103752A true CN116103752A (zh) 2023-05-12

Family

ID=84044930

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202211396415.6A Pending CN116103752A (zh) 2021-11-11 2022-11-09 高纯SiC晶体的制造方法

Country Status (6)

Country Link
US (1) US12338544B2 (https=)
EP (1) EP4190748A1 (https=)
JP (2) JP7655888B2 (https=)
KR (2) KR102525767B1 (https=)
CN (1) CN116103752A (https=)
TW (1) TWI901915B (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119118131B (zh) * 2024-11-13 2025-05-30 苏州清研半导体科技有限公司 一种高纯碳化硅粉料的合成方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB950444A (en) * 1959-05-04 1964-02-26 Ishizuka Hiroshi Process for the manufacture of high purity metallic silicon by thermal decomposition of monosilane
GB1029473A (en) * 1962-03-06 1966-05-11 Siemens Ag Improvements in or relating to the production of ultra-pure silicon carbide
US20070073075A1 (en) * 2005-09-29 2007-03-29 Wacker Chemie Ag Process and apparatus for the hydrogenation of chlorosilanes
US20170073233A1 (en) * 2015-09-14 2017-03-16 Korea Institute Of Science And Technology Method for preparing ultrahigh-purity silicon carbide powder

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4315968A (en) * 1980-02-06 1982-02-16 Avco Corporation Silicon coated silicon carbide filaments and method
US4702900A (en) 1985-04-08 1987-10-27 Bridgestone Corporation Method of producing silicon carbide
JPS61295372A (ja) * 1985-06-25 1986-12-26 Toagosei Chem Ind Co Ltd 炭化珪素膜を有する物品の製造法
JPS63123806A (ja) * 1986-11-11 1988-05-27 Mitsubishi Metal Corp 多結晶シリコンの製造方法
US5863325A (en) 1995-05-31 1999-01-26 Bridgestone Corporation Process for producing high purity silicon carbide powder for preparation of a silicon carbide single crystal and single crystal
SE9502288D0 (sv) 1995-06-26 1995-06-26 Abb Research Ltd A device and a method for epitaxially growing objects by CVD
JP3524679B2 (ja) * 1996-06-21 2004-05-10 東芝セラミックス株式会社 高純度ＣＶＤ−ＳｉＣ質の半導体熱処理用部材及びその製造方法
JP2002256435A (ja) 2001-03-02 2002-09-11 Kyocera Corp 炭化珪素基板及びその製造方法並びに磁気ヘッド用基板及び磁気ヘッドスライダ
JP3661034B2 (ja) * 2001-11-15 2005-06-15 弘 中山 膜形成方法、膜、素子、アルキルシリコン化合物、及び膜形成装置
ITMI20031196A1 (it) * 2003-06-13 2004-12-14 Lpe Spa Sistema per crescere cristalli di carburo di silicio
JP2005317670A (ja) * 2004-04-27 2005-11-10 Japan Science & Technology Agency （１００）配向した立方晶炭化珪素結晶膜の作製方法
US8409351B2 (en) * 2007-08-08 2013-04-02 Sic Systems, Inc. Production of bulk silicon carbide with hot-filament chemical vapor deposition
KR101637567B1 (ko) 2009-08-26 2016-07-08 엘지이노텍 주식회사 고순도 탄화규소 분체 제조 방법 및 시스템
TWI791486B (zh) * 2017-02-20 2023-02-11 日商德山股份有限公司 多晶矽的製造方法
KR102269878B1 (ko) * 2019-10-24 2021-06-30 하나머티리얼즈(주) 탄화 규소 분말 및 단결정 탄화 규소의 제조 방법
WO2022123083A2 (en) 2020-12-11 2022-06-16 Zadient Technologies SAS Method and device for producing a sic solid material

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB950444A (en) * 1959-05-04 1964-02-26 Ishizuka Hiroshi Process for the manufacture of high purity metallic silicon by thermal decomposition of monosilane
GB1029473A (en) * 1962-03-06 1966-05-11 Siemens Ag Improvements in or relating to the production of ultra-pure silicon carbide
US20070073075A1 (en) * 2005-09-29 2007-03-29 Wacker Chemie Ag Process and apparatus for the hydrogenation of chlorosilanes
US20170073233A1 (en) * 2015-09-14 2017-03-16 Korea Institute Of Science And Technology Method for preparing ultrahigh-purity silicon carbide powder

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
李贺军等: "《先进复合材料学》", 31 December 2016, 西北工业大学出版社, pages: 285 *

Also Published As

Publication number Publication date
JP2025031927A (ja) 2025-03-07
JP2023071626A (ja) 2023-05-23
EP4190748A1 (en) 2023-06-07
KR102525767B1 (ko) 2023-04-27
KR102525767B9 (ko) 2025-01-22
US12338544B2 (en) 2025-06-24
TWI901915B (zh) 2025-10-21
TW202321532A (zh) 2023-06-01
KR102898645B1 (ko) 2025-12-15
KR20230069034A (ko) 2023-05-18
US20230141427A1 (en) 2023-05-11
JP7655888B2 (ja) 2025-04-02

Similar Documents

Publication Publication Date Title
KR101610329B1 (ko) 전기 스파크 발생에 의한 나노입자 제조 방법
AU2016307821B2 (en) A method of producing a two-dimensional material
CN100431954C (zh) 纳米级结晶硅粉末
JP2001081564A (ja) 化学気相蒸着装置およびこれを用いたカーボンナノチューブ合成方法
JPH08225395A (ja) ホウ素ドープされたダイヤモンドの製造方法
JP2025031927A (ja) 高純度のＳｉＣ結晶体の製造方法
TW201908238A (zh) 在氣相反應器中矽－碳複合物之合成
US20070087121A1 (en) Apparatus and method for synthesizing chiral carbon nanotubes
JP5823058B2 (ja) ポリシリコンの製造方法
KR100372334B1 (ko) 플라즈마 화학기상증착 방법을 이용한 탄소나노튜브의합성 방법
JP3882077B2 (ja) 酸化ガリウムを触媒とする窒化ホウ素ナノチューブの製造方法
JP2025031927A5 (https=)
JP2004161561A (ja) 窒化ホウ素ナノチューブの製造方法
KR20130020490A (ko) 탄화 규소 및 이의 제조 방법
CN112624119A (zh) 碳化硅粉体、其制备方法和应用及反应装置
KR100931378B1 (ko) 메탄기체계 및 액상법에 의한 탄소나노튜브의 제조방법
JP7484515B2 (ja) 排ガス処理方法および炭化珪素多結晶ウエハの製造方法
US9944532B2 (en) Solid source and method for the synthesis of silicon-containing precursors for chemical vapor deposition
KR101033164B1 (ko) 폴리 실리콘 제조방법
JPS59121109A (ja) 高純度シリコンの製造方法
JPH04139014A (ja) 炭化珪素の製造方法
JP2006176811A (ja) 結晶性ＳｉＣ膜の製造方法
CN103998657B (zh) 制造多晶硅的方法
JPH04139076A (ja) Ｓｉ―炭化珪素接合体の製造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination