JP2025031927A5 - - Google Patents
Info
- Publication number
- JP2025031927A5 JP2025031927A5 JP2024229061A JP2024229061A JP2025031927A5 JP 2025031927 A5 JP2025031927 A5 JP 2025031927A5 JP 2024229061 A JP2024229061 A JP 2024229061A JP 2024229061 A JP2024229061 A JP 2024229061A JP 2025031927 A5 JP2025031927 A5 JP 2025031927A5
- Authority
- JP
- Japan
- Prior art keywords
- heating element
- conductive heating
- sic
- producing
- sic crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2021-0155113 | 2021-11-11 | ||
| KR20210155113 | 2021-11-11 | ||
| JP2022179659A JP7655888B2 (ja) | 2021-11-11 | 2022-11-09 | 高純度のＳｉＣ結晶体の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022179659A Division JP7655888B2 (ja) | 2021-11-11 | 2022-11-09 | 高純度のＳｉＣ結晶体の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2025031927A JP2025031927A (ja) | 2025-03-07 |
| JP2025031927A5 true JP2025031927A5 (https=) | 2026-03-19 |
Family
ID=84044930
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022179659A Active JP7655888B2 (ja) | 2021-11-11 | 2022-11-09 | 高純度のＳｉＣ結晶体の製造方法 |
| JP2024229061A Pending JP2025031927A (ja) | 2021-11-11 | 2024-12-25 | 高純度のＳｉＣ結晶体の製造方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022179659A Active JP7655888B2 (ja) | 2021-11-11 | 2022-11-09 | 高純度のＳｉＣ結晶体の製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12338544B2 (https=) |
| EP (1) | EP4190748A1 (https=) |
| JP (2) | JP7655888B2 (https=) |
| KR (2) | KR102525767B1 (https=) |
| CN (1) | CN116103752A (https=) |
| TW (1) | TWI901915B (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119118131B (zh) * | 2024-11-13 | 2025-05-30 | 苏州清研半导体科技有限公司 | 一种高纯碳化硅粉料的合成方法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL251143A (https=) * | 1959-05-04 | |||
| BE629139A (https=) | 1962-03-06 | |||
| US4315968A (en) * | 1980-02-06 | 1982-02-16 | Avco Corporation | Silicon coated silicon carbide filaments and method |
| US4702900A (en) | 1985-04-08 | 1987-10-27 | Bridgestone Corporation | Method of producing silicon carbide |
| JPS61295372A (ja) * | 1985-06-25 | 1986-12-26 | Toagosei Chem Ind Co Ltd | 炭化珪素膜を有する物品の製造法 |
| JPS63123806A (ja) * | 1986-11-11 | 1988-05-27 | Mitsubishi Metal Corp | 多結晶シリコンの製造方法 |
| US5863325A (en) | 1995-05-31 | 1999-01-26 | Bridgestone Corporation | Process for producing high purity silicon carbide powder for preparation of a silicon carbide single crystal and single crystal |
| SE9502288D0 (sv) | 1995-06-26 | 1995-06-26 | Abb Research Ltd | A device and a method for epitaxially growing objects by CVD |
| JP3524679B2 (ja) * | 1996-06-21 | 2004-05-10 | 東芝セラミックス株式会社 | 高純度ＣＶＤ−ＳｉＣ質の半導体熱処理用部材及びその製造方法 |
| JP2002256435A (ja) | 2001-03-02 | 2002-09-11 | Kyocera Corp | 炭化珪素基板及びその製造方法並びに磁気ヘッド用基板及び磁気ヘッドスライダ |
| JP3661034B2 (ja) * | 2001-11-15 | 2005-06-15 | 弘 中山 | 膜形成方法、膜、素子、アルキルシリコン化合物、及び膜形成装置 |
| ITMI20031196A1 (it) * | 2003-06-13 | 2004-12-14 | Lpe Spa | Sistema per crescere cristalli di carburo di silicio |
| JP2005317670A (ja) * | 2004-04-27 | 2005-11-10 | Japan Science & Technology Agency | （１００）配向した立方晶炭化珪素結晶膜の作製方法 |
| DE102005046703A1 (de) * | 2005-09-29 | 2007-04-05 | Wacker Chemie Ag | Verfahren und Vorrichtung zur Hydrierung von Chlorsilanen |
| US8409351B2 (en) * | 2007-08-08 | 2013-04-02 | Sic Systems, Inc. | Production of bulk silicon carbide with hot-filament chemical vapor deposition |
| KR101637567B1 (ko) | 2009-08-26 | 2016-07-08 | 엘지이노텍 주식회사 | 고순도 탄화규소 분체 제조 방법 및 시스템 |
| KR101678624B1 (ko) * | 2015-09-14 | 2016-11-23 | 한국과학기술연구원 | 초고순도 탄화규소 분말의 제조방법 |
| TWI791486B (zh) * | 2017-02-20 | 2023-02-11 | 日商德山股份有限公司 | 多晶矽的製造方法 |
| KR102269878B1 (ko) * | 2019-10-24 | 2021-06-30 | 하나머티리얼즈(주) | 탄화 규소 분말 및 단결정 탄화 규소의 제조 방법 |
| WO2022123083A2 (en) | 2020-12-11 | 2022-06-16 | Zadient Technologies SAS | Method and device for producing a sic solid material |
-
2022
- 2022-08-09 KR KR1020220099068A patent/KR102525767B1/ko active Active
- 2022-10-31 EP EP22204627.8A patent/EP4190748A1/en active Pending
- 2022-11-09 JP JP2022179659A patent/JP7655888B2/ja active Active
- 2022-11-09 CN CN202211396415.6A patent/CN116103752A/zh active Pending
- 2022-11-09 TW TW111142827A patent/TWI901915B/zh active
- 2022-11-10 US US18/054,439 patent/US12338544B2/en active Active
- 2022-11-11 KR KR1020220150441A patent/KR102898645B1/ko active Active
-
2024
- 2024-12-25 JP JP2024229061A patent/JP2025031927A/ja active Pending
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