CN116057670A - 摄像装置 - Google Patents

摄像装置 Download PDF

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Publication number
CN116057670A
CN116057670A CN202180054992.4A CN202180054992A CN116057670A CN 116057670 A CN116057670 A CN 116057670A CN 202180054992 A CN202180054992 A CN 202180054992A CN 116057670 A CN116057670 A CN 116057670A
Authority
CN
China
Prior art keywords
electrode
layer
imaging device
insulating film
plug
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180054992.4A
Other languages
English (en)
Chinese (zh)
Inventor
矶野俊介
留河优子
境田良太
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Intellectual Property Management Co Ltd
Original Assignee
Panasonic Intellectual Property Management Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Intellectual Property Management Co Ltd filed Critical Panasonic Intellectual Property Management Co Ltd
Publication of CN116057670A publication Critical patent/CN116057670A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/192—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN202180054992.4A 2020-09-24 2021-09-17 摄像装置 Pending CN116057670A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020159866 2020-09-24
JP2020-159866 2020-09-24
PCT/JP2021/034222 WO2022065212A1 (ja) 2020-09-24 2021-09-17 撮像装置

Publications (1)

Publication Number Publication Date
CN116057670A true CN116057670A (zh) 2023-05-02

Family

ID=80845339

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180054992.4A Pending CN116057670A (zh) 2020-09-24 2021-09-17 摄像装置

Country Status (4)

Country Link
US (1) US12598857B2 (https=)
JP (1) JP7836971B2 (https=)
CN (1) CN116057670A (https=)
WO (1) WO2022065212A1 (https=)

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03171769A (ja) 1989-11-30 1991-07-25 Toshiba Corp 固体撮像装置及びその製造方法
JPH0766380A (ja) * 1993-06-30 1995-03-10 Toshiba Corp 固体撮像装置
JPH11204659A (ja) * 1998-01-14 1999-07-30 Sony Corp 半導体装置
JP2000124310A (ja) * 1998-10-16 2000-04-28 Matsushita Electronics Industry Corp 半導体装置およびその製造方法
JP2000183064A (ja) * 1998-12-16 2000-06-30 Matsushita Electronics Industry Corp 半導体装置およびその製造方法
JP4218557B2 (ja) * 2004-03-12 2009-02-04 三菱電機株式会社 半導体装置
JP4877873B2 (ja) * 2004-08-03 2012-02-15 株式会社半導体エネルギー研究所 表示装置及びその作製方法
JP2008109110A (ja) * 2006-09-29 2008-05-08 Semiconductor Energy Lab Co Ltd 半導体装置
US7791012B2 (en) 2006-09-29 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising photoelectric conversion element and high-potential and low-potential electrodes
JP2009218421A (ja) * 2008-03-11 2009-09-24 Toshiba Corp 半導体装置およびその製造方法
JP4802286B2 (ja) * 2009-08-28 2011-10-26 富士フイルム株式会社 光電変換素子及び撮像素子
JP5323025B2 (ja) * 2010-10-26 2013-10-23 富士フイルム株式会社 固体撮像素子
JP2014179354A (ja) * 2011-06-30 2014-09-25 Panasonic Corp 光電変換膜素子およびその製造方法
WO2013018280A1 (ja) * 2011-08-02 2013-02-07 パナソニック株式会社 固体撮像装置とその製造方法
JP6231435B2 (ja) * 2014-05-20 2017-11-15 富士フイルム株式会社 固体撮像素子
CN108807434B (zh) * 2017-04-26 2023-12-05 松下知识产权经营株式会社 摄像装置及照相机系统
CN110164850B (zh) * 2018-02-15 2024-10-11 松下知识产权经营株式会社 电容元件和电容元件的制造方法
JP7162275B2 (ja) 2018-06-14 2022-10-28 パナソニックＩｐマネジメント株式会社 制御電極と、透明電極と、前記制御電極と前記透明電極の側面とを電気的に接続する接続層と、を備えるイメージセンサ

Also Published As

Publication number Publication date
JPWO2022065212A1 (https=) 2022-03-31
JP7836971B2 (ja) 2026-03-30
WO2022065212A1 (ja) 2022-03-31
US20230232644A1 (en) 2023-07-20
US12598857B2 (en) 2026-04-07

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