JPWO2022065212A1 - - Google Patents

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Publication number
JPWO2022065212A1
JPWO2022065212A1 JP2022551942A JP2022551942A JPWO2022065212A1 JP WO2022065212 A1 JPWO2022065212 A1 JP WO2022065212A1 JP 2022551942 A JP2022551942 A JP 2022551942A JP 2022551942 A JP2022551942 A JP 2022551942A JP WO2022065212 A1 JPWO2022065212 A1 JP WO2022065212A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022551942A
Other languages
Japanese (ja)
Other versions
JP7836971B2 (ja
JPWO2022065212A5 (https=
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Publication date
Application filed filed Critical
Publication of JPWO2022065212A1 publication Critical patent/JPWO2022065212A1/ja
Publication of JPWO2022065212A5 publication Critical patent/JPWO2022065212A5/ja
Application granted granted Critical
Publication of JP7836971B2 publication Critical patent/JP7836971B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/192—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2022551942A 2020-09-24 2021-09-17 撮像装置 Active JP7836971B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020159866 2020-09-24
JP2020159866 2020-09-24
PCT/JP2021/034222 WO2022065212A1 (ja) 2020-09-24 2021-09-17 撮像装置

Publications (3)

Publication Number Publication Date
JPWO2022065212A1 true JPWO2022065212A1 (https=) 2022-03-31
JPWO2022065212A5 JPWO2022065212A5 (https=) 2023-06-08
JP7836971B2 JP7836971B2 (ja) 2026-03-30

Family

ID=80845339

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022551942A Active JP7836971B2 (ja) 2020-09-24 2021-09-17 撮像装置

Country Status (4)

Country Link
US (1) US12598857B2 (https=)
JP (1) JP7836971B2 (https=)
CN (1) CN116057670A (https=)
WO (1) WO2022065212A1 (https=)

Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0766380A (ja) * 1993-06-30 1995-03-10 Toshiba Corp 固体撮像装置
JPH11204659A (ja) * 1998-01-14 1999-07-30 Sony Corp 半導体装置
JP2000124310A (ja) * 1998-10-16 2000-04-28 Matsushita Electronics Industry Corp 半導体装置およびその製造方法
JP2000183064A (ja) * 1998-12-16 2000-06-30 Matsushita Electronics Industry Corp 半導体装置およびその製造方法
JP2005260028A (ja) * 2004-03-12 2005-09-22 Mitsubishi Electric Corp 半導体装置
JP2006080494A (ja) * 2004-08-03 2006-03-23 Semiconductor Energy Lab Co Ltd 表示装置及びその作製方法、並びにテレビジョン装置
JP2008109110A (ja) * 2006-09-29 2008-05-08 Semiconductor Energy Lab Co Ltd 半導体装置
JP2009218421A (ja) * 2008-03-11 2009-09-24 Toshiba Corp 半導体装置およびその製造方法
JP2011071469A (ja) * 2009-08-28 2011-04-07 Fujifilm Corp 光電変換素子及び撮像素子
JP2012094660A (ja) * 2010-10-26 2012-05-17 Fujifilm Corp 光電変換素子及び固体撮像素子
WO2013018280A1 (ja) * 2011-08-02 2013-02-07 パナソニック株式会社 固体撮像装置とその製造方法
JP2014179354A (ja) * 2011-06-30 2014-09-25 Panasonic Corp 光電変換膜素子およびその製造方法
JP2015220395A (ja) * 2014-05-20 2015-12-07 富士フイルム株式会社 固体撮像素子
JP2018186268A (ja) * 2017-04-26 2018-11-22 パナソニックＩｐマネジメント株式会社 撮像装置、および、カメラシステム
JP2019145790A (ja) * 2018-02-15 2019-08-29 パナソニックＩｐマネジメント株式会社 容量素子、及び容量素子の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03171769A (ja) 1989-11-30 1991-07-25 Toshiba Corp 固体撮像装置及びその製造方法
US7791012B2 (en) 2006-09-29 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising photoelectric conversion element and high-potential and low-potential electrodes
JP7162275B2 (ja) 2018-06-14 2022-10-28 パナソニックＩｐマネジメント株式会社 制御電極と、透明電極と、前記制御電極と前記透明電極の側面とを電気的に接続する接続層と、を備えるイメージセンサ

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0766380A (ja) * 1993-06-30 1995-03-10 Toshiba Corp 固体撮像装置
JPH11204659A (ja) * 1998-01-14 1999-07-30 Sony Corp 半導体装置
JP2000124310A (ja) * 1998-10-16 2000-04-28 Matsushita Electronics Industry Corp 半導体装置およびその製造方法
JP2000183064A (ja) * 1998-12-16 2000-06-30 Matsushita Electronics Industry Corp 半導体装置およびその製造方法
JP2005260028A (ja) * 2004-03-12 2005-09-22 Mitsubishi Electric Corp 半導体装置
JP2006080494A (ja) * 2004-08-03 2006-03-23 Semiconductor Energy Lab Co Ltd 表示装置及びその作製方法、並びにテレビジョン装置
JP2008109110A (ja) * 2006-09-29 2008-05-08 Semiconductor Energy Lab Co Ltd 半導体装置
JP2009218421A (ja) * 2008-03-11 2009-09-24 Toshiba Corp 半導体装置およびその製造方法
JP2011071469A (ja) * 2009-08-28 2011-04-07 Fujifilm Corp 光電変換素子及び撮像素子
JP2012094660A (ja) * 2010-10-26 2012-05-17 Fujifilm Corp 光電変換素子及び固体撮像素子
JP2014179354A (ja) * 2011-06-30 2014-09-25 Panasonic Corp 光電変換膜素子およびその製造方法
WO2013018280A1 (ja) * 2011-08-02 2013-02-07 パナソニック株式会社 固体撮像装置とその製造方法
JP2015220395A (ja) * 2014-05-20 2015-12-07 富士フイルム株式会社 固体撮像素子
JP2018186268A (ja) * 2017-04-26 2018-11-22 パナソニックＩｐマネジメント株式会社 撮像装置、および、カメラシステム
JP2019145790A (ja) * 2018-02-15 2019-08-29 パナソニックＩｐマネジメント株式会社 容量素子、及び容量素子の製造方法

Also Published As

Publication number Publication date
CN116057670A (zh) 2023-05-02
JP7836971B2 (ja) 2026-03-30
WO2022065212A1 (ja) 2022-03-31
US20230232644A1 (en) 2023-07-20
US12598857B2 (en) 2026-04-07

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