CN116018644A - 半导体装置及电子设备 - Google Patents

半导体装置及电子设备 Download PDF

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Publication number
CN116018644A
CN116018644A CN202180054265.8A CN202180054265A CN116018644A CN 116018644 A CN116018644 A CN 116018644A CN 202180054265 A CN202180054265 A CN 202180054265A CN 116018644 A CN116018644 A CN 116018644A
Authority
CN
China
Prior art keywords
insulator
transistor
oxide
conductor
addition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180054265.8A
Other languages
English (en)
Chinese (zh)
Inventor
松崎隆德
大贯达也
山崎舜平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN116018644A publication Critical patent/CN116018644A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1096—Write circuits, e.g. I/O line write drivers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0009—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a DRAM cell
    • G11C14/0027—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a DRAM cell and the nonvolatile element is a ferroelectric element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Databases & Information Systems (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
CN202180054265.8A 2020-09-06 2021-08-23 半导体装置及电子设备 Pending CN116018644A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020149505 2020-09-06
JP2020-149505 2020-09-06
PCT/IB2021/057699 WO2022049448A1 (ja) 2020-09-06 2021-08-23 半導体装置、及び電子機器

Publications (1)

Publication Number Publication Date
CN116018644A true CN116018644A (zh) 2023-04-25

Family

ID=80490684

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180054265.8A Pending CN116018644A (zh) 2020-09-06 2021-08-23 半导体装置及电子设备

Country Status (5)

Country Link
US (1) US12230358B2 (https=)
JP (1) JP7711071B2 (https=)
KR (1) KR20230058645A (https=)
CN (1) CN116018644A (https=)
WO (1) WO2022049448A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102544503B1 (ko) * 2021-08-06 2023-06-16 고려대학교 산학협력단 아날로그 캐패시터 메모리 회로의 오차 보상 회로
US12426272B2 (en) * 2022-06-14 2025-09-23 Taiwan Semiconductor Manufacturing Company, Ltd. Ferroelectric tunnel junction memory devices with enhanced read window

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09120685A (ja) * 1995-10-24 1997-05-06 Sony Corp 強誘電体記憶装置
JP2001102465A (ja) 1999-09-30 2001-04-13 Rohm Co Ltd 不揮発性メモリ
JP2003092533A (ja) * 2001-09-18 2003-03-28 Matsushita Electric Ind Co Ltd 半導体回路及びその駆動方法
JP3960030B2 (ja) 2001-12-11 2007-08-15 富士通株式会社 強誘電体メモリ
WO2005064681A2 (en) 2003-12-22 2005-07-14 Koninklijke Philips Electronics N.V. Non-volatile ferroelectric memory device and manufacturing method
JP5190275B2 (ja) 2008-01-09 2013-04-24 パナソニック株式会社 半導体メモリセル及びそれを用いた半導体メモリアレイ
JP2012256821A (ja) 2010-09-13 2012-12-27 Semiconductor Energy Lab Co Ltd 記憶装置
KR102613318B1 (ko) * 2015-12-28 2023-12-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2017158465A1 (ja) 2016-03-18 2017-09-21 株式会社半導体エネルギー研究所 記憶装置
KR102421299B1 (ko) 2016-09-12 2022-07-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치, 이의 구동 방법, 반도체 장치, 전자 부품, 및 전자 기기
US10867675B2 (en) * 2017-07-13 2020-12-15 Micron Technology, Inc. Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells
US11985827B2 (en) 2020-01-17 2024-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, driving method of semiconductor device, and electronic device
WO2022064308A1 (ja) * 2020-09-22 2022-03-31 株式会社半導体エネルギー研究所 半導体装置の駆動方法
CN116114019A (zh) * 2020-09-22 2023-05-12 株式会社半导体能源研究所 半导体装置及电子设备
US11538520B1 (en) * 2021-09-23 2022-12-27 International Business Machines Corporation Negative-capacitance ferroelectric transistor assisted resistive memory programming

Also Published As

Publication number Publication date
US20230317125A1 (en) 2023-10-05
KR20230058645A (ko) 2023-05-03
US12230358B2 (en) 2025-02-18
WO2022049448A1 (ja) 2022-03-10
JPWO2022049448A1 (https=) 2022-03-10
JP7711071B2 (ja) 2025-07-22

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