KR20230058645A - 반도체 장치 및 전자 기기 - Google Patents

반도체 장치 및 전자 기기 Download PDF

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Publication number
KR20230058645A
KR20230058645A KR1020237008306A KR20237008306A KR20230058645A KR 20230058645 A KR20230058645 A KR 20230058645A KR 1020237008306 A KR1020237008306 A KR 1020237008306A KR 20237008306 A KR20237008306 A KR 20237008306A KR 20230058645 A KR20230058645 A KR 20230058645A
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KR
South Korea
Prior art keywords
insulator
transistor
oxide
conductor
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020237008306A
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English (en)
Korean (ko)
Inventor
타카노리 마츠자키
타츠야 오누키
순페이 야마자키
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20230058645A publication Critical patent/KR20230058645A/ko
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1096—Write circuits, e.g. I/O line write drivers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0009—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a DRAM cell
    • G11C14/0027—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a DRAM cell and the nonvolatile element is a ferroelectric element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Databases & Information Systems (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
KR1020237008306A 2020-09-06 2021-08-23 반도체 장치 및 전자 기기 Pending KR20230058645A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2020-149505 2020-09-06
JP2020149505 2020-09-06
PCT/IB2021/057699 WO2022049448A1 (ja) 2020-09-06 2021-08-23 半導体装置、及び電子機器

Publications (1)

Publication Number Publication Date
KR20230058645A true KR20230058645A (ko) 2023-05-03

Family

ID=80490684

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237008306A Pending KR20230058645A (ko) 2020-09-06 2021-08-23 반도체 장치 및 전자 기기

Country Status (5)

Country Link
US (1) US12230358B2 (https=)
JP (1) JP7711071B2 (https=)
KR (1) KR20230058645A (https=)
CN (1) CN116018644A (https=)
WO (1) WO2022049448A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102544503B1 (ko) * 2021-08-06 2023-06-16 고려대학교 산학협력단 아날로그 캐패시터 메모리 회로의 오차 보상 회로
US12426272B2 (en) * 2022-06-14 2025-09-23 Taiwan Semiconductor Manufacturing Company, Ltd. Ferroelectric tunnel junction memory devices with enhanced read window

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120063208A1 (en) 2010-09-13 2012-03-15 Semiconductor Energy Laboratory Co., Ltd. Memory device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09120685A (ja) * 1995-10-24 1997-05-06 Sony Corp 強誘電体記憶装置
JP2001102465A (ja) 1999-09-30 2001-04-13 Rohm Co Ltd 不揮発性メモリ
JP2003092533A (ja) * 2001-09-18 2003-03-28 Matsushita Electric Ind Co Ltd 半導体回路及びその駆動方法
JP3960030B2 (ja) 2001-12-11 2007-08-15 富士通株式会社 強誘電体メモリ
WO2005064681A2 (en) 2003-12-22 2005-07-14 Koninklijke Philips Electronics N.V. Non-volatile ferroelectric memory device and manufacturing method
JP5190275B2 (ja) 2008-01-09 2013-04-24 パナソニック株式会社 半導体メモリセル及びそれを用いた半導体メモリアレイ
KR102613318B1 (ko) * 2015-12-28 2023-12-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2017158465A1 (ja) 2016-03-18 2017-09-21 株式会社半導体エネルギー研究所 記憶装置
KR102421299B1 (ko) 2016-09-12 2022-07-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치, 이의 구동 방법, 반도체 장치, 전자 부품, 및 전자 기기
US10867675B2 (en) * 2017-07-13 2020-12-15 Micron Technology, Inc. Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells
US11985827B2 (en) 2020-01-17 2024-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, driving method of semiconductor device, and electronic device
WO2022064308A1 (ja) * 2020-09-22 2022-03-31 株式会社半導体エネルギー研究所 半導体装置の駆動方法
CN116114019A (zh) * 2020-09-22 2023-05-12 株式会社半导体能源研究所 半导体装置及电子设备
US11538520B1 (en) * 2021-09-23 2022-12-27 International Business Machines Corporation Negative-capacitance ferroelectric transistor assisted resistive memory programming

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120063208A1 (en) 2010-09-13 2012-03-15 Semiconductor Energy Laboratory Co., Ltd. Memory device

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
K. Kato et al., "Evaluation of Off-State Current Characteristics of Transistor Using Oxide Semiconductor Material, Indium-Gallium-Zinc Oxide," Jpn. J. Appl. Phys., vol. 51, 021201(2012).
S. Amano et al., "Low Power LC Display Using In-Ga-Zn-Oxide TFTs Based on Variable Frame Frequency," SID Symp. Dig. Papers, vol.41, pp.626-629(2010).
S. Yamazaki et al., "Properties of crystalline In-Ga-Zn-oxide semiconductor and its transistor characteristics," Jpn. J. Appl. Phys., vol. 53, 04ED18(2014).
T. Ishizu et al., "Embedded Oxide Semiconductor Memories: A Key Enabler for Low-Power ULSI," ECS Tran., vol. 79, pp. 149-156(2017).

Also Published As

Publication number Publication date
US20230317125A1 (en) 2023-10-05
US12230358B2 (en) 2025-02-18
WO2022049448A1 (ja) 2022-03-10
JPWO2022049448A1 (https=) 2022-03-10
JP7711071B2 (ja) 2025-07-22
CN116018644A (zh) 2023-04-25

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Patent event date: 20230309

Patent event code: PA01051R01D

Comment text: International Patent Application

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PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20240819

Comment text: Request for Examination of Application