JP7711071B2 - 半導体装置、及び電子機器 - Google Patents
半導体装置、及び電子機器Info
- Publication number
- JP7711071B2 JP7711071B2 JP2022546727A JP2022546727A JP7711071B2 JP 7711071 B2 JP7711071 B2 JP 7711071B2 JP 2022546727 A JP2022546727 A JP 2022546727A JP 2022546727 A JP2022546727 A JP 2022546727A JP 7711071 B2 JP7711071 B2 JP 7711071B2
- Authority
- JP
- Japan
- Prior art keywords
- insulator
- transistor
- oxide
- conductor
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/1096—Write circuits, e.g. I/O line write drivers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
- G11C14/0009—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a DRAM cell
- G11C14/0027—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a DRAM cell and the nonvolatile element is a ferroelectric element
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Databases & Information Systems (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020149505 | 2020-09-06 | ||
| JP2020149505 | 2020-09-06 | ||
| PCT/IB2021/057699 WO2022049448A1 (ja) | 2020-09-06 | 2021-08-23 | 半導体装置、及び電子機器 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022049448A1 JPWO2022049448A1 (https=) | 2022-03-10 |
| JPWO2022049448A5 JPWO2022049448A5 (https=) | 2024-08-20 |
| JP7711071B2 true JP7711071B2 (ja) | 2025-07-22 |
Family
ID=80490684
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022546727A Active JP7711071B2 (ja) | 2020-09-06 | 2021-08-23 | 半導体装置、及び電子機器 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12230358B2 (https=) |
| JP (1) | JP7711071B2 (https=) |
| KR (1) | KR20230058645A (https=) |
| CN (1) | CN116018644A (https=) |
| WO (1) | WO2022049448A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102544503B1 (ko) * | 2021-08-06 | 2023-06-16 | 고려대학교 산학협력단 | 아날로그 캐패시터 메모리 회로의 오차 보상 회로 |
| US12426272B2 (en) * | 2022-06-14 | 2025-09-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Ferroelectric tunnel junction memory devices with enhanced read window |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017121046A (ja) | 2015-12-28 | 2017-07-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2017158465A1 (ja) | 2016-03-18 | 2017-09-21 | 株式会社半導体エネルギー研究所 | 記憶装置 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09120685A (ja) * | 1995-10-24 | 1997-05-06 | Sony Corp | 強誘電体記憶装置 |
| JP2001102465A (ja) | 1999-09-30 | 2001-04-13 | Rohm Co Ltd | 不揮発性メモリ |
| JP2003092533A (ja) * | 2001-09-18 | 2003-03-28 | Matsushita Electric Ind Co Ltd | 半導体回路及びその駆動方法 |
| JP3960030B2 (ja) | 2001-12-11 | 2007-08-15 | 富士通株式会社 | 強誘電体メモリ |
| WO2005064681A2 (en) | 2003-12-22 | 2005-07-14 | Koninklijke Philips Electronics N.V. | Non-volatile ferroelectric memory device and manufacturing method |
| JP5190275B2 (ja) | 2008-01-09 | 2013-04-24 | パナソニック株式会社 | 半導体メモリセル及びそれを用いた半導体メモリアレイ |
| JP2012256821A (ja) | 2010-09-13 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 記憶装置 |
| KR102421299B1 (ko) | 2016-09-12 | 2022-07-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 기억 장치, 이의 구동 방법, 반도체 장치, 전자 부품, 및 전자 기기 |
| US10867675B2 (en) * | 2017-07-13 | 2020-12-15 | Micron Technology, Inc. | Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells |
| US11985827B2 (en) | 2020-01-17 | 2024-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, driving method of semiconductor device, and electronic device |
| WO2022064308A1 (ja) * | 2020-09-22 | 2022-03-31 | 株式会社半導体エネルギー研究所 | 半導体装置の駆動方法 |
| CN116114019A (zh) * | 2020-09-22 | 2023-05-12 | 株式会社半导体能源研究所 | 半导体装置及电子设备 |
| US11538520B1 (en) * | 2021-09-23 | 2022-12-27 | International Business Machines Corporation | Negative-capacitance ferroelectric transistor assisted resistive memory programming |
-
2021
- 2021-08-23 CN CN202180054265.8A patent/CN116018644A/zh active Pending
- 2021-08-23 JP JP2022546727A patent/JP7711071B2/ja active Active
- 2021-08-23 US US18/043,103 patent/US12230358B2/en active Active
- 2021-08-23 WO PCT/IB2021/057699 patent/WO2022049448A1/ja not_active Ceased
- 2021-08-23 KR KR1020237008306A patent/KR20230058645A/ko active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017121046A (ja) | 2015-12-28 | 2017-07-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2017158465A1 (ja) | 2016-03-18 | 2017-09-21 | 株式会社半導体エネルギー研究所 | 記憶装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20230317125A1 (en) | 2023-10-05 |
| KR20230058645A (ko) | 2023-05-03 |
| US12230358B2 (en) | 2025-02-18 |
| WO2022049448A1 (ja) | 2022-03-10 |
| JPWO2022049448A1 (https=) | 2022-03-10 |
| CN116018644A (zh) | 2023-04-25 |
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Legal Events
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| TRDD | Decision of grant or rejection written | ||
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