CN115804258A - 存储单元和存储器 - Google Patents
存储单元和存储器 Download PDFInfo
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- CN115804258A CN115804258A CN202080101899.XA CN202080101899A CN115804258A CN 115804258 A CN115804258 A CN 115804258A CN 202080101899 A CN202080101899 A CN 202080101899A CN 115804258 A CN115804258 A CN 115804258A
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- memory
- doping
- memory cells
- memory cell
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
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- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
本申请提供一种存储单元和存储器，其中，存储单元包括：沿第一方向依次叠加的第一掺杂结构、第二掺杂结构和半导体结构，沿第二方向依次叠加的半导体结构、遂穿层、电荷俘获层，导电层，位于电荷俘获层上，其中，第一掺杂结构与第二掺杂结构的掺杂类型相反。本申请提升了存储单元和存储器的微缩能力。
Description
PCT国内申请，说明书已公开。
Claims (16)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2020/106165 WO2022021307A1 (zh) | 2020-07-31 | 2020-07-31 | 存储单元和存储器 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115804258A true CN115804258A (zh) | 2023-03-14 |
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ID=80037320
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080101899.XA Pending CN115804258A (zh) | 2020-07-31 | 2020-07-31 | 存储单元和存储器 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN115804258A (zh) |
| WO (1) | WO2022021307A1 (zh) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8213226B2 (en) * | 2008-12-05 | 2012-07-03 | Micron Technology, Inc. | Vertical transistor memory cell and array |
| CN105870121B (zh) * | 2014-12-28 | 2018-09-21 | 苏州诺存微电子有限公司 | 三维非易失性nor型闪存 |
| CN107658302A (zh) * | 2016-07-25 | 2018-02-02 | 上海新昇半导体科技有限公司 | 一种存储器结构及其制备方法 |
| CN109326604A (zh) * | 2017-08-01 | 2019-02-12 | 华邦电子股份有限公司 | 三维存储器及其操作方法 |
| JP6563988B2 (ja) * | 2017-08-24 | 2019-08-21 | ウィンボンド エレクトロニクス コーポレーション | 不揮発性半導体記憶装置 |
-
2020
- 2020-07-31 CN CN202080101899.XA patent/CN115804258A/zh active Pending
- 2020-07-31 WO PCT/CN2020/106165 patent/WO2022021307A1/zh active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022021307A1 (zh) | 2022-02-03 |
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