CN1150599C - 半导体工艺中顶层光刻成像的改善 - Google Patents
半导体工艺中顶层光刻成像的改善 Download PDFInfo
- Publication number
- CN1150599C CN1150599C CNB001067125A CN00106712A CN1150599C CN 1150599 C CN1150599 C CN 1150599C CN B001067125 A CNB001067125 A CN B001067125A CN 00106712 A CN00106712 A CN 00106712A CN 1150599 C CN1150599 C CN 1150599C
- Authority
- CN
- China
- Prior art keywords
- layer
- silicon
- described method
- top layer
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 22
- 238000003384 imaging method Methods 0.000 title description 45
- 230000006872 improvement Effects 0.000 title description 2
- 238000001259 photo etching Methods 0.000 title description 2
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 52
- 239000010703 silicon Substances 0.000 claims abstract description 52
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 47
- 238000000034 method Methods 0.000 claims abstract description 45
- 238000005530 etching Methods 0.000 claims abstract description 12
- 238000005260 corrosion Methods 0.000 claims description 33
- 230000007797 corrosion Effects 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims description 10
- 230000001105 regulatory effect Effects 0.000 claims description 10
- 239000000654 additive Substances 0.000 claims description 9
- 230000000996 additive effect Effects 0.000 claims description 9
- 230000035515 penetration Effects 0.000 claims description 6
- 239000000376 reactant Substances 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 238000012546 transfer Methods 0.000 claims description 6
- 238000011161 development Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 239000000428 dust Substances 0.000 claims description 3
- 239000003518 caustics Substances 0.000 claims 1
- 238000000059 patterning Methods 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 102
- 238000003475 lamination Methods 0.000 description 19
- 238000005516 engineering process Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/151—Matting or other surface reflectivity altering material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Drying Of Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims (22)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/290319 | 1999-04-12 | ||
US09/290,319 US6316168B1 (en) | 1999-04-12 | 1999-04-12 | Top layer imaging lithography for semiconductor processing |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1274170A CN1274170A (zh) | 2000-11-22 |
CN1150599C true CN1150599C (zh) | 2004-05-19 |
Family
ID=23115463
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB001067125A Expired - Fee Related CN1150599C (zh) | 1999-04-12 | 2000-04-12 | 半导体工艺中顶层光刻成像的改善 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6316168B1 (zh) |
EP (1) | EP1047118A3 (zh) |
JP (1) | JP2000315684A (zh) |
KR (1) | KR100662945B1 (zh) |
CN (1) | CN1150599C (zh) |
TW (1) | TW541591B (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6911061B2 (en) | 2002-09-05 | 2005-06-28 | Nuclear Filter Technology | In-line HEPA filter |
US7253113B2 (en) * | 2003-11-13 | 2007-08-07 | Macronix International Co., Ltd. | Methods for using a silylation technique to reduce cell pitch in semiconductor devices |
KR100598103B1 (ko) * | 2004-05-27 | 2006-07-10 | 삼성전자주식회사 | 패턴 형성 방법 |
CN100468642C (zh) * | 2004-11-30 | 2009-03-11 | 飞思卡尔半导体公司 | 形成光刻胶图案的方法 |
KR20080023814A (ko) * | 2006-09-12 | 2008-03-17 | 주식회사 하이닉스반도체 | 반도체소자의 미세패턴 형성방법 |
US20080160459A1 (en) * | 2006-12-28 | 2008-07-03 | Benjamin Szu-Min Lin | Method of forming a pattern |
KR100881513B1 (ko) * | 2007-05-18 | 2009-02-05 | 주식회사 동부하이텍 | 반도체 미세패턴 형성 방법 |
US7782660B2 (en) * | 2008-03-20 | 2010-08-24 | International Business Machines Corporation | Magnetically de-coupling magnetic memory cells and bit/word lines for reducing bit selection errors |
US8186051B2 (en) | 2008-03-28 | 2012-05-29 | Intel Corporation | Method for fabricating package substrate and die spacer layers having a ceramic backbone |
US10522349B2 (en) * | 2017-11-30 | 2019-12-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-reflective coating by ion implantation for lithography patterning |
US11114299B2 (en) * | 2019-07-05 | 2021-09-07 | Applied Materials, Inc. | Techniques for reducing tip to tip shorting and critical dimension variation during nanoscale patterning |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1548520A (en) * | 1976-08-27 | 1979-07-18 | Tokyo Shibaura Electric Co | Method of manufacturing a semiconductor device |
US4661712A (en) * | 1985-05-28 | 1987-04-28 | Varian Associates, Inc. | Apparatus for scanning a high current ion beam with a constant angle of incidence |
JPS6452142A (en) * | 1987-08-24 | 1989-02-28 | Nippon Telegraph & Telephone | Pattern forming process and silylating apparatus |
JPH0246463A (ja) * | 1988-08-06 | 1990-02-15 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH05205989A (ja) * | 1992-01-28 | 1993-08-13 | Hitachi Ltd | リソグラフィ法及び半導体装置の製造方法 |
JPH05251323A (ja) * | 1992-03-04 | 1993-09-28 | Fujitsu Ltd | パターン形成方法 |
US5576359A (en) * | 1993-07-20 | 1996-11-19 | Wako Pure Chemical Industries, Ltd. | Deep ultraviolet absorbent composition |
JP2803999B2 (ja) * | 1993-11-10 | 1998-09-24 | 現代電子産業株式会社 | 半導体装置の微細パターン製造法 |
KR0174316B1 (ko) * | 1994-07-05 | 1999-04-01 | 모리시다 요이치 | 미세패턴 형성방법 |
JP2953562B2 (ja) * | 1994-07-18 | 1999-09-27 | 東京応化工業株式会社 | リソグラフィー用下地材及びそれを用いた多層レジスト材料 |
TW388083B (en) * | 1995-02-20 | 2000-04-21 | Hitachi Ltd | Resist pattern-forming method using anti-reflective layer, resist pattern formed, and method of etching using resist pattern and product formed |
KR19990008362A (ko) * | 1996-03-06 | 1999-01-25 | 얀 드'해머,헤르베르트 볼만 | 리프트-오프 이미징 프로파일을 얻기 위한 방법 |
US5858621A (en) * | 1997-01-22 | 1999-01-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bi-layer silylation process using anti-reflective-coatings (ARC) for making distortion-free submicrometer photoresist patterns |
US5922516A (en) * | 1997-06-04 | 1999-07-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bi-layer silylation process |
US6020243A (en) * | 1997-07-24 | 2000-02-01 | Texas Instruments Incorporated | Zirconium and/or hafnium silicon-oxynitride gate dielectric |
US5940697A (en) * | 1997-09-30 | 1999-08-17 | Samsung Electronics Co., Ltd. | T-gate MESFET process using dielectric film lift-off technique |
-
1999
- 1999-04-12 US US09/290,319 patent/US6316168B1/en not_active Expired - Lifetime
-
2000
- 2000-03-31 EP EP00106894A patent/EP1047118A3/en not_active Withdrawn
- 2000-04-12 KR KR1020000019209A patent/KR100662945B1/ko not_active IP Right Cessation
- 2000-04-12 CN CNB001067125A patent/CN1150599C/zh not_active Expired - Fee Related
- 2000-04-12 JP JP2000111181A patent/JP2000315684A/ja active Pending
- 2000-04-17 TW TW089106608A patent/TW541591B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TW541591B (en) | 2003-07-11 |
JP2000315684A (ja) | 2000-11-14 |
US6316168B1 (en) | 2001-11-13 |
EP1047118A2 (en) | 2000-10-25 |
KR20000071655A (ko) | 2000-11-25 |
EP1047118A3 (en) | 2001-07-18 |
KR100662945B1 (ko) | 2006-12-28 |
CN1274170A (zh) | 2000-11-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4533624A (en) | Method of forming a low temperature multilayer photoresist lift-off pattern | |
KR100232187B1 (ko) | 반사방지막 식각방법 | |
CN1150599C (zh) | 半导体工艺中顶层光刻成像的改善 | |
EP1475461A1 (en) | Methods for etching an aluminum-containing layer | |
KR100293975B1 (ko) | 건식 에칭 방법 및 건식 에칭 방법을 이용한 반도체 장치의 제조방법 | |
KR100415088B1 (ko) | 반도체장치의 제조방법 | |
US5700739A (en) | Method of multi-step reactive ion etch for patterning adjoining semiconductor metallization layers | |
CN101593725A (zh) | 接触孔的形成方法 | |
CN1098532C (zh) | 抗反射膜材料以及利用所述材料制造半导体器件的方法 | |
CN101399185B (zh) | 保护金属层、形成焊盘、金属布线层及微反射镜面的方法 | |
KR100290910B1 (ko) | 반도체소자의 배선 형성방법 | |
KR100324595B1 (ko) | 리프트-오프법을 이용한 반도체 소자의 금속배선 형성방법 | |
KR960011812B1 (ko) | 반도체 소자의 3층 레지스트 패턴 형성방법 | |
KR100252916B1 (ko) | 알루미늄 합금막의 부식방지방법 | |
KR100370166B1 (ko) | 반도체 소자의 게이트 전극 형성 방법 | |
KR100523605B1 (ko) | 반도체 소자의 커패시터 형성 방법 | |
KR100412145B1 (ko) | 반도체 소자의 비아홀 형성방법 | |
KR100406738B1 (ko) | 반도체 소자의 제조 방법 | |
KR0144140B1 (ko) | 금속배선방법 | |
KR100663015B1 (ko) | 금속배선 및 그 형성 방법 | |
KR100291189B1 (ko) | 반도체 장치 제조 방법 | |
KR100248340B1 (ko) | 반도체제조방법 | |
KR100596793B1 (ko) | 반도체소자의 금속배선 형성방법 | |
KR960008095B1 (ko) | 오르가닉 아크층을 이용한 미세 패턴 형성 방법 | |
KR100300860B1 (ko) | 반도체 소자의 알루미늄 금속배선 형성 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: WD Ref document number: 1032852 Country of ref document: HK |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160309 Address after: German Berg, Laura Ibiza Patentee after: Infineon Technologies AG Address before: American California Patentee before: Infenion Tech. North America Corp. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20040519 Termination date: 20160412 |
|
CF01 | Termination of patent right due to non-payment of annual fee |