CN114993028A - Silicon wafer drying treatment method and system - Google Patents
Silicon wafer drying treatment method and system Download PDFInfo
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- CN114993028A CN114993028A CN202210688603.XA CN202210688603A CN114993028A CN 114993028 A CN114993028 A CN 114993028A CN 202210688603 A CN202210688603 A CN 202210688603A CN 114993028 A CN114993028 A CN 114993028A
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B21/00—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
- F26B21/06—Controlling, e.g. regulating, parameters of gas supply
- F26B21/08—Humidity
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B25/00—Details of general application not covered by group F26B21/00 or F26B23/00
- F26B25/001—Handling, e.g. loading or unloading arrangements
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The application discloses a silicon wafer drying treatment method and a silicon wafer drying treatment system, wherein the method comprises the following steps: step 1: heating the air around the silicon chip; step 2: introducing ozone gas into the heated air to dehumidify the surface of the silicon wafer by the ozone gas and the heated air; and step 3: carrying out dewatering and drying treatment on the dehumidified air to obtain low-humidity air, controlling the low humidity air to be led into the periphery of the silicon wafer, and circularly executing the steps 1-3 until a preset first drying condition is met; by the method, in the process of drying the surface of the silicon wafer, ozone gas is introduced to carry out chemical reaction treatment on pollutants on the surface of the silicon wafer, and the water on the surface of the silicon wafer is dried again by the heat released by the chemical reaction, so that the drying effect and the drying speed of the silicon wafer are improved, the water marks formed on the surface of the silicon wafer in the drying process can be avoided, and the qualified rate of finished products of the silicon wafer is improved.
Description
Technical Field
The application relates to the technical field of silicon wafer processing, in particular to a silicon wafer drying treatment method and system.
Background
Currently, with the development of chip technology, higher requirements are also put on raw material products of chips, especially in the silicon wafer processing and manufacturing process. The process for processing and manufacturing silicon wafers includes a cleaning step in which the silicon wafers are cleaned with an aqueous solution to remove the deposits on the surfaces of the silicon wafers.
After the cleaning, the silicon wafer needs to be dried in order to remove moisture on the surface of the silicon wafer, but the current drying process is only to dry the surface of the silicon wafer through circulating hot air, and water marks are formed on the surface of the silicon wafer in the drying process, so that the qualified rate of finished silicon wafers is low.
Disclosure of Invention
The application provides a silicon wafer drying processing method and system and electronic equipment, which can avoid water marks formed on the surface of a silicon wafer in the drying process, improve the drying effect and drying speed of the silicon wafer, and improve the qualified rate of finished products of the silicon wafer.
In a first aspect, the present application provides a silicon wafer drying method, including:
step 1: heating the air around the silicon chip;
step 2: introducing ozone gas into the heated air to dehumidify the surface of the silicon wafer by the ozone gas and the heated air;
and step 3: and (3) carrying out dewatering and drying treatment on the air subjected to the dehumidification treatment to obtain low-humidity air, controlling the low humidity to be led into the periphery of the silicon wafer, and circularly executing the steps 1-3 until a preset first drying condition is met.
By the method, in the process of drying the surface of the silicon wafer, ozone gas is simultaneously introduced to carry out chemical reaction treatment on pollutants on the surface of the silicon wafer, and the heat released by the chemical reaction is used for drying the moisture on the surface of the silicon wafer again, so that the drying effect and the drying speed of the silicon wafer are improved, the formation of water marks on the surface of the silicon wafer in the drying process can be avoided, and the qualified rate of finished products of the silicon wafer is improved.
In one possible design, the drying process for removing water from the dehumidified air includes:
carrying out dewatering and drying treatment on the dehumidified air;
heating the air subjected to the dewatering and drying treatment so as to perform dehumidification treatment on the surface of the silicon wafer through the heated air again;
and carrying out dewatering and drying treatment on the air subjected to the dehumidification treatment again until a preset second drying condition is met.
By the method, the surface of the silicon wafer is subjected to hot air drying at least twice, ozone gas is introduced in the last hot air drying process to perform chemical reaction treatment on pollutants on the surface of the silicon wafer (namely, the step 1 is returned), and the moisture on the surface of the silicon wafer is dried again through heat released by the chemical reaction, so that the drying effect and the drying speed of the silicon wafer can be improved again, and the qualified rate of finished products of the silicon wafer is higher.
In a possible design, the drying and dewatering process for the hot and humid air obtained after the dehumidification process includes:
carrying out humidity detection on the air subjected to dewatering and drying treatment;
when the humidity value of the air obtained by the dewatering and drying treatment is smaller than a set threshold value, outputting the air subjected to the dewatering and drying treatment for heating treatment;
and when the humidity value of the air subjected to the dewatering and drying treatment is greater than the set threshold value, continuing the dewatering and drying treatment.
In one possible design, the first drying condition includes: and (4) the cycle times of the steps 1-3 reach the set cycle drying times.
In one possible design, the second drying condition includes: the number of times of the dewatering and drying treatment of the air reaches the set number of times of dewatering and drying.
In a second aspect, the present application provides a silicon wafer drying processing system, comprising: the device comprises a controller, a drying device, an ozone adding device and a dehumidifying device;
the drying equipment is used for executing the step 1: heating the air around the silicon chip;
the ozone adding device is used for executing the step 2: introducing ozone gas into the heated air to dehumidify the surface of the silicon wafer by the ozone gas and the heated air;
the dehumidification device is used for executing the step 3: carrying out dewatering and drying treatment on the dehumidified air to obtain low-humidity air, and guiding the low-humidity air around the silicon wafer to circularly execute the step 1-3;
and the controller is used for controlling the drying equipment, the ozone adding equipment and the dehumidifying equipment to stop when a preset first drying condition is met so as to finish the silicon wafer drying treatment.
In a possible design, during the dewatering and drying process, the dehumidifying device is used for carrying out the dewatering and drying process on the dehumidified air;
the drying equipment is used for heating the air subjected to the dewatering and drying treatment so as to dehumidify the surface of the silicon wafer by the heated air again;
and the dehumidifying equipment is used for carrying out dewatering and drying treatment on the dehumidified air again until a preset second drying condition is met.
In one possible design, the silicon wafer drying processing system further comprises a humidity sensor;
the humidity sensor is used for detecting the humidity of the air subjected to dewatering and drying treatment in the dehumidification equipment;
when the humidity value of the air obtained by the dewatering and drying treatment is smaller than a set threshold value, the humidity sensor is used for outputting the air subjected to the dewatering and drying treatment to the drying equipment so as to heat the output air;
and when the humidity value of the air subjected to the dewatering and drying treatment is greater than the set threshold value, the dehumidifying equipment is used for continuously carrying out the dewatering and drying treatment on the air.
In one possible design, the first drying condition includes: and (4) the cycle times of the steps 1-3 reach the set cycle drying times.
In one possible design, the second drying condition includes: the number of times of the dewatering and drying treatment of the air reaches the set number of times of dewatering and drying.
For each aspect in the second aspect and possible technical effects of each aspect, please refer to the above description of the technical effects that can be achieved for the first aspect or various possible schemes in the first aspect, and details are not repeated here.
Drawings
FIG. 1 is a flow chart of a silicon wafer drying method provided by the present application;
fig. 2 is a schematic structural diagram of a silicon wafer drying processing system provided in the present application;
FIG. 3 is a schematic representation of an ozone treatment process for a silicon wafer surface provided herein;
fig. 4 is a schematic view of a silicon wafer drying process provided in the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be described in further detail with reference to the accompanying drawings. The particular methods of operation in the method embodiments may also be applied to apparatus embodiments or system embodiments. It should be noted that "a plurality" is understood as "at least two" in the description of the present application. "and/or" describes the association relationship of the associated objects, meaning that there may be three relationships, e.g., a and/or B, which may mean: a exists alone, A and B exist simultaneously, and B exists alone. A is connected with B and can represent: a and B are directly connected and A and B are connected through C. In the description of the present application, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or order.
The embodiments of the present application will be described in detail below with reference to the accompanying drawings.
The first embodiment is as follows:
fig. 1 is a flowchart of a silicon wafer drying method according to an embodiment of the present application, where the method includes:
step 1: heating the air around the silicon chip;
step 2: introducing ozone gas into the heated air to dehumidify the surface of the silicon wafer by the ozone gas and the heated air;
and 3, step 3: and (3) carrying out dewatering and drying treatment on the air subjected to the dehumidification treatment to obtain low-humidity air, controlling the low humidity to be led into the periphery of the silicon wafer, and circularly executing the steps 1-3 until a preset first drying condition is met.
Wherein the first drying condition includes: and (4) the cycle times of the steps 1-3 reach the set cycle drying times.
Specifically, before the silicon wafer is dried, automatic feeding is sequentially performed on the silicon wafer, first ultrasonic cleaning is performed on the silicon wafer, second ultrasonic cleaning is performed on the silicon wafer, first ultrasonic alkaline cleaning is performed on the silicon wafer, second ultrasonic alkaline cleaning is performed on the silicon wafer, first ultrasonic rinsing is performed on the silicon wafer after alkaline cleaning, second ultrasonic rinsing is performed on the silicon wafer, third ultrasonic rinsing is performed on the silicon wafer, then acid cleaning is reserved on the silicon wafer after rinsing is completed, ultrasonic rinsing is performed twice again after acid cleaning is completed, slow-drawing dehydration is performed, and finally hot air drying processing of the steps 1-3 is performed.
Before the drying treatment, the effectiveness of the water removal effect of the silicon wafer can be verified in the following way.
Total mass water content: w is the moisture content in the total material/total material mass;
relative water content of silicon wafer: x is the water content in the total substance/mass of the silicon wafer;
the conversion formula of the total material water content and the relative water content of the silicon wafer is as follows:
x ═ W/1-W or W ═ X/1+ X;
continuing to set Gj: absolute mass of the silicon wafer;
gs: total mass before drying;
gg: the total mass of the dried material;
xs: relative water content of wet silicon wafer;
xg: the relative water content of the dried silicon wafer;
then the water evaporation capacity formula is calculated by using the water content of the total substance:
W＝Gs-Gg＝Gs*(Ws-Wg)/1-Wg
＝Gg*(Ws-Wg)/1-Ws；
calculating a water evaporation amount formula by using the relative water content of the silicon wafer:
W＝GJ*(Xs-Xg)；
and continuing to set Ws: the total material water content of the wet silicon wafer;
and (Wg): the water content of the total material after the silicon chip is dried;
l: absolute dry air consumption;
hs: the relative water content of the air entering the silicon wafer after heating;
hg: the relative water content of the air after drying the silicon wafer;
i: unit dry air consumption;
then, the evaporation amount of moisture is calculated using the absolute dry air consumption amount:
W＝L(Hg-Hs)；
L＝W/(Hg-Hs)；
the unit dry air consumption I is 1/(Hg-HS) L/W.
When (Hg-HS) is equal to +. varies, the I value is the smallest, namely the unit air consumption is the smallest. That is, the drying efficiency is highest when Hg ∈. + -. varies, and HS ∈. -. varies.
HS is epsilon-and is in contact, namely the humidity of air before entering a silicon chip is required to approach zero; hg is equal to + -%, namely the air humidity of the dried silicon wafer is required to approach 100%; when the air heating temperature is constant, the air humidity before the silicon wafers are heated can be reduced to be close to zero only by a centrifugal machine or a dehumidifier as far as possible.
The above process is a process of treating and controlling hot air, in the embodiment of the application, besides using hot air to dry the silicon wafer, ozone gas is also introduced into the silicon wafer during the drying process, and the moisture on the surface of the silicon wafer is dried by the ozone gas and heated air.
Specifically, the silicon wafer drying is realized through a drying device, and a dehumidifying device and an ozone adding device can be added into the drying device to accelerate the drying speed and the drying effect through physical and chemical reactions. The drying equipment is provided with a drying chamber for placing the silicon wafers, a heater is arranged below the drying chamber and used for heating air, and a hot air outlet is arranged above the drying chamber and used for leading the air heated by the heater into the drying chamber so as to dry the silicon wafers. An air outlet pipeline of the dehumidifying equipment is communicated with an air pipeline of a heater of the drying equipment and is used for guiding the air subjected to dewatering and drying treatment into the heater for heating; the air inlet pipeline of the dehumidification equipment is communicated with the drying chamber of the drying equipment and is positioned above the drying chamber, and the air inlet pipeline is used for recycling air after the silicon wafer is subjected to dehumidification treatment to the dehumidification equipment so as to perform dewatering and drying treatment. The ozone adding device is communicated with a drying chamber of the drying device and is used for adding ozone gas of the drying device into air blown out of a hot air outlet of the drying device so as to carry out dehumidification and drying treatment on the silicon wafer together, and the specific structure is shown in fig. 2.
After the hot air drying, the water molecules on the silicon wafer are less remained and concentrated at the lower end of the silicon wafer, as shown in fig. 3, after the ozone gas enters the drying chamber, the ozone gas is immediately decomposed into oxygen molecules and oxygen atoms, the oxygen atoms can rapidly react with the water molecules remained on the silicon wafer to generate carboxyl radicals, and the surface of the silicon wafer can also have a plurality of organic matter pollution sources even after being cleaned, and the generated carboxyl radicals can exactly react with the pollutants to neutralize the pollutants. The method comprises the following specific chemical reaction processes:
O 3 ＝＝＝O 2 + O (oxygen atom);
2O 3 ＝＝＝3O 2 +285KJ；
2H 2 O+2O＝＝＝4OH；
OH + organic contaminants carbon dioxide and mineral salts
The chemical reaction generates heat, which can be supplied to the air for drying the silicon wafer.
Further, in addition to the above reaction process, silicon and silicon dioxide undergo the following chemical reactions with water and oxygen:
Si+2H 2 o (vaporous) SiO 2 +2H 2 ；
Si+3H 2 O＝＝H 2 SiO 3 +2H 2 ；
Si+O 2 +H 2 O＝＝H 2 SiO 3 ；
A large amount of water is consumed in the chemical reaction process, so that the surface of the silicon wafer is further dried. It should be noted that the temperature of the drying chamber in the embodiment of the present invention is 90 to 100 degrees, and the chemical reaction is more severe at higher temperature under such temperature condition.
The silicon dioxide generated in the high-temperature oxygen-enriched environment in the drying equipment has the characteristics of compact structure, drying, uniformity and good repeatability, the silicon dioxide is an atomic crystal, and the size of the crystal structure is 2.27 angstroms (0.227 nanometer); the crystal size of the water molecule was 3.3 angstroms (0.33 nm). Under the condition, water molecules are difficult to embed in the silicon dioxide crystal with a compact structure, so that the adhesion of the water molecules on the oxide layer on the surface of the silicon wafer is very small, and water can be quickly taken away by dry gas, thereby accelerating the evaporation speed of the water molecules on the silicon wafer.
By the method, in the process of drying the surface of the silicon wafer, ozone gas is introduced to carry out chemical reaction treatment on pollutants on the surface of the silicon wafer, and the water on the surface of the silicon wafer is dried again through the heat released by the chemical reaction, so that the drying effect and the drying speed of the silicon wafer are improved, the water marks formed on the surface of the silicon wafer in the drying process can be avoided, and the qualified rate of finished products of the silicon wafer is improved.
In an alternative embodiment, the dewatering and drying process for the dehumidified air includes:
carrying out dewatering and drying treatment on the dehumidified air;
heating the air subjected to the dewatering and drying treatment to perform dehumidification treatment on the surface of the silicon wafer by the heated air again;
and carrying out dewatering and drying treatment on the air subjected to the dehumidification treatment again until a preset second drying condition is met.
Wherein the second drying condition includes: the number of times of the dewatering and drying treatment of the air reaches the set number of times of dewatering and drying.
Further, the dewatering and drying treatment of the hot and humid air obtained after the dehumidification treatment includes:
carrying out humidity detection on the air subjected to dewatering and drying treatment;
when the humidity value of the air obtained by the dewatering and drying treatment is smaller than a set threshold value, outputting the air subjected to the dewatering and drying treatment for heating treatment;
and when the humidity value of the air subjected to the dewatering and drying treatment is greater than the set threshold value, continuing to perform the dewatering and drying treatment.
By the method, the surface of the silicon wafer is subjected to hot air drying at least twice, ozone gas is introduced in the last hot air drying process to perform chemical reaction treatment on pollutants on the surface of the silicon wafer (namely, the step 1 is returned), and the moisture on the surface of the silicon wafer is dried again through heat released by the chemical reaction, so that the drying effect and the drying speed of the silicon wafer can be improved again, and the qualified rate of finished products of the silicon wafer is higher.
The flow of the silicon wafer drying process will be described below with reference to fig. 4, taking the case of performing the hot air drying process twice on the silicon wafer as an example.
(1) The heater heats air and guides the air to the surface of the silicon wafer so that the heated air takes away the moisture on the surface of the silicon wafer;
(2) adding ozone gas into a drying chamber, so that the ozone gas is decomposed into oxygen and oxygen atoms, and the oxygen and the moisture on the surface of the silicon wafer are subjected to chemical reaction to further absorb or squeeze away the moisture on the surface of the silicon wafer;
(3) the dehumidification equipment recovers the hot humid air obtained through the steps (1) and (2) and carries out dehydration and drying treatment;
(4) heating the hot humid air obtained in the step (3) by using a heater again to obtain low-humidity hot air, and guiding the low-humidity hot air to the surface of the silicon wafer to quickly take away the moisture on the surface of the silicon wafer;
(5) and (4) recovering the hot humid air obtained in the step (4) by the dehumidification equipment, performing dehydration and drying treatment for the second time, and returning to the step (1).
According to the method, the surface of the silicon wafer is subjected to hot air drying twice, ozone gas is introduced in the first hot air drying treatment process to carry out chemical reaction treatment on pollutants on the surface of the silicon wafer, and the moisture on the surface of the silicon wafer is dried again through heat released by the chemical reaction, and the second hot air drying treatment is that after the first hot air drying treatment, hot humidity air is recovered to be heated and dried again, so that the drying effect and the drying speed of the silicon wafer can be improved again, and the qualified rate of finished products of the silicon wafer is higher.
Example two
Fig. 2 is a schematic view of a silicon wafer drying processing apparatus according to an embodiment of the present application. The silicon wafer drying processing system comprises: a controller (not shown), a drying device 1, an ozone adding device 3, and a dehumidifying device 2;
the drying device 1 is configured to perform step 1: heating the air around the silicon chip;
the ozone adding device 3 is used for executing the step 2: introducing ozone gas into the heated air to dehumidify the surface of the silicon wafer by the ozone gas and the heated air;
the dehumidification device 2 is configured to perform step 3: carrying out dewatering and drying treatment on the dehumidified air to obtain low-humidity air, and guiding the low-humidity air to the periphery of the silicon wafer under the control of low humidity so as to circularly execute the steps 1-3;
and the controller is used for controlling the drying equipment, the ozone adding equipment and the dehumidifying equipment to stop when a preset first drying condition is met so as to finish the silicon wafer drying treatment.
Wherein the first drying condition includes: and (4) the cycle times of the steps 1-3 reach the set cycle drying times.
The dehumidifying device 2 can adopt a centrifugal machine or a dehumidifier to reduce the air humidity as much as possible, so that the air humidity approaches zero, and low-humidity air is obtained.
Illustratively, the drying device is provided with a drying chamber for placing the silicon wafers, a heater is arranged below the drying chamber and used for heating air, and a hot air outlet is arranged above the drying chamber and used for guiding the air heated by the heater into the drying chamber so as to dry the silicon wafers. An air outlet pipeline of the dehumidifying equipment is communicated with an air pipeline of a heater of the drying equipment and is used for guiding the air subjected to dewatering and drying treatment into the heater for heating; the air inlet pipeline of the dehumidification equipment is communicated with the drying chamber of the drying equipment and is positioned above the drying chamber, and the air inlet pipeline is used for recycling air after the silicon wafer is subjected to dehumidification treatment to the dehumidification equipment so as to perform dewatering and drying treatment. The ozone adding equipment is communicated with a drying chamber of the drying equipment and is used for adding ozone gas of the drying equipment into air blown out of a hot air outlet of the drying equipment so as to carry out dehumidification and drying treatment on the silicon wafer together. Illustratively, one side of the drying chamber is provided with the hot air outlet, the other side of the drying chamber is provided with a high-humidity air recovery port, the heater heats the air in the air pipeline in the drying chamber and guides the heated air to the periphery of the silicon wafer in the drying chamber through the hot air outlet, the ozone adding equipment adds ozone gas into the air around the silicon wafer through the ozone pipeline so as to dry the silicon wafer by the hot air mixed with the ozone gas, the formed hot humid air is recovered to the dehumidifying equipment through the high-humidity air recovery port to be subjected to dewatering and drying treatment, and the formed low-humidity air is guided into the heater of the drying equipment from the air outlet pipeline to be heated again. The controller is electrically connected with the drying equipment, the ozone adding equipment and the dehumidifying equipment and is used for controlling the starting or stopping of the drying equipment, the ozone adding equipment and the dehumidifying equipment.
In an alternative embodiment, during the dewatering and drying process, the dehumidifying device is used for dewatering and drying the air after the dewatering and drying process;
the drying equipment is used for heating the air subjected to the dewatering and drying treatment so as to dehumidify the surface of the silicon wafer by the heated air again;
and the dehumidifying equipment is used for carrying out dewatering and drying treatment on the dehumidified air again until a preset second drying condition is met.
Wherein the second drying condition includes: the number of times of the dewatering and drying treatment of the air reaches the set number of times of dewatering and drying.
In an optional embodiment, the silicon wafer drying processing system further comprises a humidity sensor;
the humidity sensor is used for detecting the humidity of the air subjected to dewatering and drying treatment in the dehumidifying equipment;
when the humidity value of the air obtained by the dewatering and drying treatment is smaller than a set threshold value, the humidity sensor is used for outputting the air subjected to the dewatering and drying treatment to the drying equipment so as to heat the output air;
and when the humidity value of the air subjected to the dewatering and drying treatment is greater than the set threshold value, the dehumidifying equipment is used for continuously carrying out the dewatering and drying treatment on the air.
For each aspect in the second aspect and possible technical effects of each aspect, please refer to the above description of the technical effects that can be achieved for the first aspect or various possible schemes in the first aspect, and details are not repeated here.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present application without departing from the spirit and scope of the application. Thus, if such modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is intended to include such modifications and variations as well.
Claims (10)
1. A silicon wafer drying treatment method is characterized by comprising the following steps:
step 1: heating the air around the silicon chip;
step 2: introducing ozone gas into the heated air to dehumidify the surface of the silicon wafer by the ozone gas and the heated air;
and step 3: and (3) carrying out dewatering and drying treatment on the air subjected to the dehumidifying treatment to obtain low-humidity air, guiding the low-humidity air to the periphery of the silicon wafer, and circularly executing the step (1-3) until a preset first drying condition is met.
2. The silicon wafer drying processing method according to claim 1, wherein the dehydrating and drying processing of the dehumidified air includes:
carrying out dewatering and drying treatment on the dehumidified air;
heating the air subjected to the dewatering and drying treatment to perform dehumidification treatment on the surface of the silicon wafer by the heated air again;
and carrying out dewatering and drying treatment on the air subjected to the dehumidification treatment again until a preset second drying condition is met.
3. The silicon wafer drying treatment method according to claim 1, wherein the dewatering and drying treatment of the hot and humid air obtained after the dehumidifying treatment comprises:
carrying out humidity detection on the air subjected to dewatering and drying treatment;
when the humidity value of the air obtained by the dewatering and drying treatment is smaller than a set threshold value, outputting the air subjected to the dewatering and drying treatment for heating treatment;
and when the humidity value of the air subjected to the dewatering and drying treatment is greater than the set threshold value, continuing to perform the dewatering and drying treatment.
4. The silicon wafer drying processing method of claim 1, wherein the first drying condition includes: and (4) the cycle times of the steps 1-3 reach the set cycle drying times.
5. The silicon wafer drying processing method of claim 2, wherein the second drying condition comprises: the number of times of the dewatering and drying treatment of the air reaches the set number of times of dewatering and drying.
6. A silicon wafer drying processing system is characterized by comprising: the device comprises a controller, a drying device, an ozone adding device and a dehumidifying device;
the drying equipment is used for executing the step 1: heating the air around the silicon chip;
the ozone adding device is used for executing the step 2: introducing ozone gas into the heated air to dehumidify the surface of the silicon wafer by the ozone gas and the heated air;
the dehumidification device is used for executing the step 3: carrying out dewatering and drying treatment on the dehumidified air to obtain low-humidity air, and guiding the low-humidity air to the periphery of the silicon wafer under the control of low humidity so as to circularly execute the steps 1-3;
and the controller is used for controlling the drying equipment, the ozone adding equipment and the dehumidifying equipment to stop when a preset first drying condition is met so as to finish the silicon wafer drying treatment.
7. The silicon wafer drying processing system according to claim 6, wherein the dehumidifying apparatus is configured to perform a water-removing and drying process on the dehumidified air during the water-removing and drying process;
the drying equipment is used for heating the air subjected to the dewatering and drying treatment so as to dehumidify the surface of the silicon wafer by the heated air again;
and the dehumidifying equipment is used for carrying out dewatering and drying treatment on the dehumidified air again until a preset second drying condition is met.
8. The silicon wafer drying processing system of claim 7, further comprising a humidity sensor;
the humidity sensor is used for detecting the humidity of the air subjected to dewatering and drying treatment in the dehumidification equipment;
when the humidity value of the air obtained by the dewatering and drying treatment is smaller than a set threshold value, the humidity sensor is used for outputting the air subjected to the dewatering and drying treatment to the drying equipment so as to heat the output air;
and when the humidity value of the air subjected to the dewatering and drying treatment is greater than the set threshold value, the dehumidifying equipment is used for continuously carrying out the dewatering and drying treatment on the air.
9. The silicon wafer drying processing system of claim 6, wherein the first drying condition comprises: and (4) the cycle times of the steps 1-3 reach the set cycle drying times.
10. The silicon wafer drying processing system of claim 7, wherein the second drying condition comprises: the number of times of the dewatering and drying treatment of the air reaches the set number of times of dewatering and drying.
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Citations (17)
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