KR102457227B1 - Device for treating pollutant emitted from semiconductor production facility - Google Patents

Device for treating pollutant emitted from semiconductor production facility Download PDF

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KR102457227B1
KR102457227B1 KR1020220107231A KR20220107231A KR102457227B1 KR 102457227 B1 KR102457227 B1 KR 102457227B1 KR 1020220107231 A KR1020220107231 A KR 1020220107231A KR 20220107231 A KR20220107231 A KR 20220107231A KR 102457227 B1 KR102457227 B1 KR 102457227B1
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gas
duct
scrubber
dust collector
semiconductor production
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이민영
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주식회사 에코에이블
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D47/00—Separating dispersed particles from gases, air or vapours by liquid as separating agent
    • B01D47/02—Separating dispersed particles from gases, air or vapours by liquid as separating agent by passing the gas or air or vapour over or through a liquid bath
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/26—Drying gases or vapours
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2258/00—Sources of waste gases
    • B01D2258/02—Other waste gases
    • B01D2258/0216—Other waste gases from CVD treatment or semi-conductor manufacturing

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
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  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Treating Waste Gases (AREA)

Abstract

The present invention relates to a device for treating pollutants emitted from a semiconductor production facility. The present invention comprises: a discharge duct connected to the semiconductor production facility and guiding gas generated during a semiconductor production process; a scrubber allowing the gas transported through the discharge duct to pass therethrough and removing pollutants in the gas; a dust collector connected to the scrubber through a first transfer duct and additionally removing pollutants from the gas passing through the scrubber; a dryer connected to the dust collector through a second transfer duct and drying the gas passing through the second transfer duct; an exhaust fan exhausting the gas dried by the dryer; and a controller outputting a control signal. The device for treating pollutants emitted from a semiconductor production facility of the present invention, configured as described above, is provided with a processing stage-specific sensor to sense a concentration of pollutants after stage-specific processing is completed and repeatedly perform the processing when the processing is insufficient. Accordingly, the present invention shows excellent processing efficiency. In addition, since waste heat or geothermal heat is used to operate the device and rainwater is also utilized, low-cost operation is possible.

Description

반도체 생산설비에서 배출되는 오염물질 처리장치{Device for treating pollutant emitted from semiconductor production facility}Device for treating pollutant emitted from semiconductor production facility

본 발명은 반도체 생산설비에서 발생하는 각종 오염물질을 처리하는 오염물질 처리장치에 관한 것으로서, 보다 상세하게는, 오염물질 제거 효율이 양호하고 저비용 운용이 가능한, 반도체 생산설비에서 배출되는 오염물질 처리장치에 관한 것이다.The present invention relates to a contaminant treatment apparatus for treating various contaminants generated in semiconductor production facilities, and more particularly, to a contaminant treatment apparatus having good contaminant removal efficiency and low-cost operation possible. is about

반도체 생산 공정 중에 발생하는 배출가스에는 다양한 종류의 미세입자 포함된다. 이러한 미세입자에는, 식각공정 및 증착공정에서 사용되는 불소화합물로부터 비롯된 미세입자나, 기판 세정 및 건조공정에서 비산되는 유기 액적물질 등이 포함된다. 불소화합물에 의한 미세 입자는, 대기중에서 분해되는 시간이 길어 지구온난화를 가중시키고, 유기 액적물질은, 대기중에 부단 방출시 대기환경을 교란하는 대기 오염물질로 알려져 있다.Exhaust gases generated during the semiconductor production process include various types of fine particles. These fine particles include fine particles derived from fluorine compounds used in the etching process and the deposition process, and organic droplet materials scattered in the substrate cleaning and drying process. It is known that fine particles of fluorine compounds take a long time to decompose in the atmosphere, aggravating global warming, and organic droplet substances are known as air pollutants that disturb the atmospheric environment when continuously released into the atmosphere.

이와 같이, 반도체 생산 시, 대기를 오염시키는 유해가스(이하, 오염물질)가 방출되므로, 반도체 생산 공장에는 오염물질을 제거하기 위한 다양한 처리장치가 운용되고 있다.As described above, since noxious gases (hereinafter referred to as pollutants) that pollute the atmosphere are emitted during semiconductor production, various processing devices for removing pollutants are operated in semiconductor production plants.

종래의 처리장치로서, 물리적 필터를 이용하는 방식이 있다. 그런데 필터를 이용하는 방식은, 초미세입자에 대한 필터링이 충분하지 않으며, 시간이 지남에 따라 필터가 오염되어 처리 능력이 저하한다는 단점을 갖는다. 더욱이, 점성을 갖는 미세입자는 필터에 들러붙어 필터 수명을 단축시키는 문제를 야기한다.As a conventional processing apparatus, there is a method using a physical filter. However, the method using the filter has disadvantages that filtering for ultrafine particles is not sufficient, and the filter becomes contaminated over time, thereby reducing the processing capacity. Moreover, the fine particles with viscosity cause a problem of sticking to the filter and shortening the filter life.

물리적 필터 뿐 아니라, 다른 제거 방식이 적용된 처리장치가 요구되고 있는 것이다. 이와 관련된 발명의 배경이 되는 기술로서, 국내 공개특허공보 제10-2009-0131768호 (반도체 제조공정의 폐가스 처리장치)가 개시된 바 있다.In addition to the physical filter, a treatment device to which another removal method is applied is required. As a background technology for the related invention, Korean Patent Application Laid-Open No. 10-2009-0131768 (a waste gas treatment device for a semiconductor manufacturing process) has been disclosed.

개시된 폐가스 처리장치는, 폐가스를 가열하는 건식처리부와, 건식처리부의 일측에 설치되어 고온의 폐가스를 물과 반응시키는 습식처리부와, 습식처리부의 일측에 연결되어 물과 반응 후의 폐가스가 배출되는 배기관 및 메인덕트로 이루어진 스크러버를 포함하는 반도체 제조공정의 폐가스 처리장치에 있어서, 배기관에 연결 설치될 수 있도록 유입구 및 배출구가 형성되는 본체프레임; 유입구를 통해 유입되는 폐가스 내에 포함된 부식성 수분을 제거하는 수분제거부; 수분제거부를 통과한 폐가스의 원활한 흐름과 수분의 유입을 방지하는 데미스터; 데미스터를 통과한 폐가스 내에 포함된 부식성 유해가스를 제거하는 화학반응부를 포함한다.The disclosed waste gas treatment apparatus includes: a dry treatment unit for heating waste gas; a wet treatment unit installed on one side of the dry treatment unit to react hot waste gas with water; an exhaust pipe connected to one side of the wet treatment unit to discharge waste gas after reaction with water; An apparatus for processing waste gas of a semiconductor manufacturing process including a scrubber made of a main duct, comprising: a body frame having an inlet and an outlet to be connected to an exhaust pipe; a water removal unit for removing corrosive moisture contained in the waste gas introduced through the inlet; a demister for preventing the smooth flow of waste gas passing through the moisture removal unit and the inflow of moisture; It includes a chemical reaction unit that removes the corrosive harmful gas contained in the waste gas that has passed through the demister.

그런데 상기 폐가스 처리장치는, 건식처리부를 통과한 폐가스와 물과의 접촉시간이 짧고 그나마 접촉면적도 좁으므로, 처리효율이 그다지 좋지 못하며, 폐가스를 일부러 가열해야 하므로 많은 운용 비용이 소모된다는 단점을 갖는다.However, the waste gas treatment device has a short contact time between the waste gas passing through the dry treatment unit and water and a small contact area, so the treatment efficiency is not very good, and the waste gas needs to be heated on purpose, so that a lot of operating cost is consumed. .

본 발명은 상기 문제점을 해소하고자 창출한 것으로서, 단계별 처리 후의 오염물질의 농도를 감지하여 농도가 높을 경우 반복 처리하므로 오염물 저감 효율이 양호하고, 저비용 운용이 가능한, 반도체 생산설비에서 배출되는 오염물질 처리장치를 제공함에 목적이 있다.The present invention was created to solve the above problems, and it detects the concentration of pollutants after step-by-step treatment and repeats treatment when the concentration is high. An object of the present invention is to provide a device.

상기 목적을 달성하기 위한 과제의 해결수단으로서의 본 발명의 반도체 생산설비에서 배출되는 오염물질 처리장치는, 반도체 생산설비에 연결되며, 반도체 생산 공정 중에 발생하는 가스를 유도하는 배출덕트와; 배출덕트를 통해 이송된 가스를 통과시키며 가스내의 오염물질을 제거하는 스크러버와; 제1이송덕트를 통해 스크러버에 연결되고, 스크러버를 통과한 가스 내의 오염물질을 추가적으로 제거하는 집진기와; 집진기에 제2이송덕트로 연결되며, 제2이송덕트를 통과한 가스를 건조시키는 드라이어와; 드라이어에 의해 건조된 가스를 배기하는 배기팬과; 제어신호를 출력하는 컨트롤러를 포함하고, 상기 제1이송덕트에는; 스크러버를 통과한 가스 내의 잔류 오염물질의 농도를 감지하고, 감지 내용을 컨트롤러에 전달하는 제1센서와, 제1이송덕트에서 분기되어 스크러버에 연결된 리턴덕트와, 제1이송덕트와 리턴덕트의 분기점에 설치되고, 컨트롤러에 의해 동작하여, 스크러버를 통과한 가스 내의 잔류 오염물질의 농도가 기준치 미만일 때 가스를 집진기로 보내고, 기준치 이상일 때 리턴덕트를 통해 스크러버로 돌려보내는 제1전환밸브를 구비하고, 제2이송덕트에는; 집진기를 통과한 가스 내의 잔류 오염물질의 농도를 감지하고, 감지 내용을 컨트롤러에 전달하는 제2센서와, 제2이송덕트에서 분기되어 집진기에 연결된 리턴덕트와, 제2이송덕트와 리턴덕트의 분기점에 설치되고, 컨트롤러에 의해 동작하여, 집진기를 통과한 가스 내의 잔류 오염물질의 농도가 기준치 미만일 때 가스를 드라이어로 보내고, 기준치 이상일 때 리턴덕트를 통해 집진기로 돌려보내는 제2전환밸브를 갖는다.An apparatus for treating pollutants discharged from a semiconductor production facility of the present invention as a means of solving the problem for achieving the above object includes: an exhaust duct connected to the semiconductor production facility and guiding gas generated during the semiconductor production process; a scrubber passing the gas transferred through the exhaust duct and removing contaminants in the gas; a dust collector connected to the scrubber through the first transfer duct and additionally removing contaminants in the gas that has passed through the scrubber; a dryer connected to the dust collector through a second conveying duct and drying the gas passing through the second conveying duct; an exhaust fan exhausting the gas dried by the dryer; a controller for outputting a control signal, wherein the first transfer duct includes; A first sensor that detects the concentration of residual contaminants in the gas that has passed through the scrubber and transmits the detected content to the controller, a return duct branched from the first transfer duct and connected to the scrubber, and a branch point between the first transfer duct and the return duct A first switching valve installed in the air conditioner and operated by the controller to send the gas to the dust collector when the concentration of residual contaminants in the gas that has passed through the scrubber is less than the reference value, and to return the gas to the scrubber through the return duct when it is higher than the reference value, In the second transfer duct; A second sensor that detects the concentration of residual contaminants in the gas that has passed through the dust collector and transmits the detected content to the controller, a return duct branched from the second transfer duct and connected to the dust collector, and a branch point between the second transfer duct and the return duct It has a second switching valve installed in the air conditioner and operated by the controller to send the gas to the dryer when the concentration of residual contaminants in the gas that has passed through the dust collector is less than the reference value, and return the gas to the dust collector through the return duct when it is higher than the reference value.

또한, 상기 배출덕트에는; 배출덕트를 통과한 가스 내의 오염물질의 농도를 감지하고 감지내용을 컨트롤러로 전달하는 메인센서와, 메인센서의 하류측에 위치하고, 컨트롤러에 의해 동작하는 메인전환밸브가 설치되며, 메인전환밸브에는; 가스를 스크러버로 보내는 제1유도덕트와, 제1유도덕트와 병렬 연결되고 제1유도덕트의 차단 시 가스를 유도하는 제2유도덕트가 연결되고, 제2유도덕트의 단부에는, 우수처리시설로부터 전달된 우수(雨水)가 수용되는 우수탱크가 연결되되, 우수탱크 내에는 가스를 우수 내부로 분출하는 분출부와, 우수의 수면보다 높게 위치하며 우수를 통과하는 가스를 포집하는 포집부가 설치되고, 포집부와 제1유도덕트는 연결덕트로 접속된다.In addition, the discharge duct; A main sensor that detects the concentration of contaminants in the gas that has passed through the exhaust duct and transmits the detected content to the controller, is located downstream of the main sensor, and is provided with a main selector valve operated by the controller, the main selector valve includes; A first induction duct that sends gas to the scrubber, a second induction duct that is connected in parallel with the first induction duct and guides gas when the first induction duct is blocked is connected, and at the end of the second induction duct, from the rainwater treatment facility A rainwater tank in which the delivered rainwater is received is connected, and in the rainwater tank, a ejection part that ejects gas into the rainwater and a collecting part that is located higher than the water surface of the rainwater and collects gas passing through the rainwater are installed, The collecting part and the first induction duct are connected by a connecting duct.

그리고, 상기 드라이어의 내부에는, 집진기로부터 넘어온 가스를 가열하여 가스 내 수분을 제거하는 가열부가 내장되고, 가열부에 열을 공급하기 위한 것으로서, 반도체생산설비 내의 반응챔버에 접하며, 반응챔버의 열을 전달받아 이동시키는 히트파이프와, 히트파이프의 연장단부를 수용하고 물이 채워지는 워터챔버와, 워터챔버 내에서 히트파이프의 열에 의해 가열된 가열수를, 드라이어의 가열부로 이동시키는 가열수파이프가 더 포함된다.And, inside the dryer, a heating unit for removing moisture in the gas by heating the gas flowing from the dust collector is built in, for supplying heat to the heating unit, in contact with the reaction chamber in the semiconductor production facility, and heats the reaction chamber A heat pipe that receives and moves the heat pipe, a water chamber that accommodates the extended end of the heat pipe and is filled with water, and a heated water pipe that moves the heated water heated by the heat of the heat pipe in the water chamber to the heating part of the dryer. Included.

또한, 상기 드라이어의 내부에는, 집진기로부터 넘어온 가스를 가열하여 가스 내 수분을 제거하는 가열부가 내장되고, 가열부에 열을 공급하기 위한 것으로서, 지중에 매설되며 지열에너지를 흡수하는 지열하비스터와, 지열하비스터와 드라이어를 연결하며, 물을 순환시켜 지열하비스터의 열을 드라이어로 전달시키는 순환파이프 및 펌프와, 순환파이프 내부의 물을 가열하는 보조히터를 구비한다.In addition, a heating unit for removing moisture in the gas by heating the gas passed from the dust collector is built in the dryer, and for supplying heat to the heating unit, a geothermal harvester that is buried in the ground and absorbs geothermal energy; A circulation pipe and a pump for connecting the geothermal harvester and the dryer, circulating water to transfer the heat of the geothermal harvester to the dryer, and an auxiliary heater for heating the water inside the circulation pipe are provided.

상기와 같이 이루어지는 본 발명의 반도체 생산설비에서 배출되는 오염물질 처리장치는, 처리 단계별 센서가 구비되어 있으므로, 단계별 처리가 완료된 후의 오염물질의 농도를 감지하여 처리가 불충분할 경우 반복 처리하므로 처리효율이 매우 뛰어나다. Since the apparatus for treating pollutants discharged from the semiconductor production facility of the present invention as described above is equipped with a sensor for each processing step, it detects the concentration of the pollutants after the step-by-step processing is completed and repeats the processing if the processing is insufficient. Very good.

또한, 장치의 운용을 위해 폐열이나 지열을 사용하고, 또한 우수(雨水)를 활용하므로 저비용 운용이 가능하다.In addition, since waste heat or geothermal heat is used for the operation of the device and rainwater is utilized, low-cost operation is possible.

도 1은 본 발명의 일 실시예에 따른 반도체 생산설비에서 배출되는 오염물질 처리장치의 전체적인 구성을 나타내 보인 도면이다.
도 2는 도 1에 도시한 오염물질 처리장치의 작동 방식을 설명하기 위한 블록도이다.1 is a view showing the overall configuration of an apparatus for treating pollutants discharged from a semiconductor production facility according to an embodiment of the present invention.
FIG. 2 is a block diagram illustrating an operation method of the apparatus for treating pollutants shown in FIG. 1 .

이하, 본 발명에 따른 하나의 실시예를 첨부된 도면을 참조하여 보다 상세히 설명하기로 한다.Hereinafter, one embodiment according to the present invention will be described in more detail with reference to the accompanying drawings.

도 1은 본 발명의 일 실시예에 따른 반도체 생산설비에서 배출되는 오염물질 처리장치(10)의 전체적인 구성을 나타내 보인 도면이고, 도 2는 도 1에 도시한 오염물질 처리장치의 작동 방식을 설명하기 위한 블록도이다.1 is a view showing the overall configuration of a contaminant treatment apparatus 10 discharged from a semiconductor production facility according to an embodiment of the present invention, and FIG. 2 explains an operation method of the contaminant treatment apparatus shown in FIG. 1 . This is a block diagram for

도시한 바와 같이, 본 실시예에 따른 오염물질 처리장치(10)는, 배출덕트(17), 제1유도덕트(25), 제2유도덕트(26), 스크러버(43), 집진기(45), 드라이어(47), 배기팬(49), 컨트롤러(69), 우수탱크(33)를 포함한다.As shown, the pollutant treatment apparatus 10 according to the present embodiment includes a discharge duct 17 , a first induction duct 25 , a second induction duct 26 , a scrubber 43 , and a dust collector 45 . , a dryer 47 , an exhaust fan 49 , a controller 69 , and a rainwater tank 33 .

오염물 처리장치(10)는, 공장(11) 내 반도체생산설비(13)의 반응챔버(15)에서 발생하는 가스 내의 오염물질을 제거하고, 정화된 후의 깨끗한 공기를 배기하는 것이다.The pollutant treatment device 10 removes pollutants in the gas generated in the reaction chamber 15 of the semiconductor production facility 13 in the factory 11 and exhausts clean air after purification.

반응챔버(15)는, 반도체 웨이퍼에 대한 식각이나 증착 공정이 이루어지는 챔버로서, 공정 중 여러 가지 오염물질을 발생한다. 이에 대해서는 위에 설명하였다. 참고로 반응챔버(15)에는, 소스를 증발시키기 위해 고온의 온도 분위기가 만들어지는데, 본 실시예의 처리장치(10)는 반응챔버(15)에서 사용 된 후 버려지는 폐열을 이용해 드라이어(47)를 동작시킨다. 이에 대한 설명은 후술된다. The reaction chamber 15 is a chamber in which an etching or deposition process for a semiconductor wafer is performed, and various contaminants are generated during the process. This has been described above. For reference, in the reaction chamber 15, a high-temperature atmosphere is created in order to evaporate the source. make it work This will be described later.

반도체생산설비(13)는 하나의 공장(11)에 여러 대수가 운용될 수 있다. Several semiconductor production facilities 13 may be operated in one factory 11 .

배출덕트(17)는 각 반도체생산설비(13)의 반응챔버(15)에서 배출되는 가스를 뽑아내어 메인센서(21) 측으로 유도한다. 이를 위헤 배출덕트(17)에는 가스펌프(19)가 설치된다. 배출덕트(17)를 통과하는 가스에는 제거대상인 오염물질이 포함되어 있다.The exhaust duct 17 extracts the gas discharged from the reaction chamber 15 of each semiconductor production facility 13 and guides it to the main sensor 21 side. To this end, a gas pump 19 is installed in the exhaust duct 17 . The gas passing through the exhaust duct 17 contains contaminants to be removed.

배출덕트(17)의 단부에는 메인센서(21)가 설치된다. 메인센서(21)는, 배출덕트(17)를 통해 이동한 가스 내의 오염물질의 농도를 감지하고 감지내용을 컨트롤러(69)로 전달한다. 컨트롤러(69)는 오염물질의 농도 정보를 기초로, 가스를 제1유도덕트(25)로 보낼지, 제2유도덕트(26)로 보낼지 결정한다.A main sensor 21 is installed at the end of the discharge duct 17 . The main sensor 21 detects the concentration of contaminants in the gas that has moved through the exhaust duct 17 and transmits the detected content to the controller 69 . The controller 69 determines whether to send the gas to the first induction duct 25 or the second induction duct 26 based on the concentration information of the pollutants.

메인전환밸브(23)는 메인센서(21)의 하류측에 위치하고, 컨트롤러(69)에 의해 동작하여, 제1유도덕트(25)나 제2유도덕트(26)를 선택적으로 개방한다. 제1유도덕트(25)가 개방되면 가스는 스크러버(43)로 바로 들어가고, 제2유도덕트(26)가 개방되면 가스가 우수탱크(33)를 거친 후 스크러버(43)로 이동한다. The main switching valve 23 is located on the downstream side of the main sensor 21 and is operated by the controller 69 to selectively open the first induction duct 25 or the second induction duct 26 . When the first induction duct 25 is opened, the gas directly enters the scrubber 43 , and when the second induction duct 26 is opened, the gas passes through the rainwater tank 33 and then moves to the scrubber 43 .

제1유도덕트(25)와 제2유도덕트(26)의 선택 기준은, 메인센서(21)가 감지한 오염물질의 농도이다. 가스 내 오염물질의 농도가 설정치 이상일 경우에는 제2유도덕트(26)를 열어 우수탱크(33)로 보내고, 그 이하일 경우, 즉, 스크러버(43)와 집진기(45) 만으로 처리가 가능할 정도에는, 제1유도덕트(25)를 개방하는 것이다.The selection criterion of the first induction duct 25 and the second induction duct 26 is the concentration of the contaminant detected by the main sensor 21 . When the concentration of contaminants in the gas is higher than the set value, the second induction duct 26 is opened and sent to the rainwater tank 33. To open the first induction duct (25).

가스 내 오염물질의 농도가 낮게 유지되거나, 대형 스크러버와 집진기를 운용할 경우, 메인센서(21)와 메인전환밸브(23)와 우수탱크(33)를 적용하지 않을 수 있다.When the concentration of pollutants in the gas is kept low or when a large scrubber and dust collector are operated, the main sensor 21 , the main switching valve 23 , and the rainwater tank 33 may not be applied.

스크러버(43)는 제1유도덕트(25)를 통해 전달된 가스를 통과시키며 가스내의 오염물질을 제거한다. 스크러버(43) 자체는 일반적인 스크러버와 같으며, 스크러버 자체에 관한 설명은 생략한다.The scrubber 43 passes the gas delivered through the first induction duct 25 and removes contaminants in the gas. The scrubber 43 itself is the same as a general scrubber, and a description of the scrubber itself is omitted.

스크러버(43)의 유출구에는 제1이송덕트(43a)가 연결된다. 제1이송덕트(43a)는 가스를 집진기(45)로 넘겨주는 파이프이다. A first transfer duct 43a is connected to the outlet of the scrubber 43 . The first transfer duct 43a is a pipe passing the gas to the dust collector 45 .

제1이송덕트(43a)에는, 제1센서(44), 제1전환밸브(43b), 리턴덕트(43d)가 설치된다. 리턴덕트(43d)는 제1이송덕트(43a)에서 분기되어 스크러버의 유입구(가스가 들어가는 유입구)에 이어지는 분기관이다. A first sensor 44, a first switching valve 43b, and a return duct 43d are provided in the first transfer duct 43a. The return duct 43d is a branch pipe branched from the first transfer duct 43a and connected to the scrubber inlet (the gas inlet).

제1센서(44)는, 스크러버(43)를 통과한 가스 내의 잔류 오염물질의 농도를 감지하고, 감지 내용을 컨트롤러(69)에 전달한다. The first sensor 44 detects the concentration of residual contaminants in the gas that has passed through the scrubber 43 , and transmits the detected content to the controller 69 .

또한 제1전환밸브(43b)는 제1이송덕트(43a)와 리턴덕트(43d)의 분기점에 설치된 밸브로서 컨트롤러(69)에 의해 동작한다. 즉, 제1센서(44)에 의해 감지된 오염물질의 농도가 기준치 미만일 때에는, 리턴덕트(43d)를 차단하여 가스가 집진기로 이동하게 한다. 하지만, 농도가 기준치 이상일 때에는 가스를 리턴덕트를 통해 스크러버(43)로 돌려낸다. 제1센서(44)가 감지한 농도가 떨어지지 않고 계속 높다면, 가스는 리턴덕트(43d)와 스크러버(43)를 순환하며 정화처리가 반복된다.Also, the first switching valve 43b is a valve provided at a branch point between the first transfer duct 43a and the return duct 43d and is operated by the controller 69 . That is, when the concentration of the contaminant sensed by the first sensor 44 is less than the reference value, the return duct 43d is blocked so that the gas moves to the dust collector. However, when the concentration is higher than the reference value, the gas is returned to the scrubber 43 through the return duct. If the concentration detected by the first sensor 44 continues to be high without falling, the gas circulates through the return duct 43d and the scrubber 43 and the purification process is repeated.

집진기(45)는 제1이송덕트(43a)를 통과한 가스를 받아들여 가스 내의 잔류 오염물질을 추가적으로 제거한다. 집진기(45) 자체의 구성이나 동작은 일반적인 것으로서 그에 관한 설명도 생략한다.The dust collector 45 receives the gas passing through the first transfer duct 43a to additionally remove residual contaminants in the gas. The configuration or operation of the dust collector 45 itself is a general thing, and a description thereof is also omitted.

집진기(45)의 유출구에는 제2이송덕트(45a)가 연결된다. 제2이송덕트(45a)는 집진기(45)를 통과한 가스를 드라이어(47)로 전달하는 파이프이다.A second transfer duct 45a is connected to the outlet of the dust collector 45 . The second transfer duct 45a is a pipe for passing the gas passing through the dust collector 45 to the dryer 47 .

그리고, 제2이송덕트(45a)에는, 제2센서(46), 제2전환밸브(45b), 리턴덕트(45d)가 설치된다. In addition, a second sensor 46, a second switching valve 45b, and a return duct 45d are provided in the second transfer duct 45a.

제2센서(46)는, 집진기(45)를 통과한 가스 내의 잔류 오염물질의 농도를 감지하고, 감지 내용을 컨트롤러(69)에 전달한다. The second sensor 46 detects the concentration of residual contaminants in the gas that has passed through the dust collector 45 , and transmits the detected content to the controller 69 .

제2전환밸브(45b)는 제2이송덕트(45a)와 리턴덕트(45d)의 분기점에 설치된 밸브로서 컨트롤러(69)에 의해 동작한다. 즉, 제2센서(46)에 의해 감지된 오염물질의 농도가 기준치 미만일 때에는, 리턴덕트(45d)를 차단하여 가스가 드라이어(47) 이동하게 하고, 농도가 기준치 이상일 때에는 리턴덕트(45d)를 개방하여 가스가 집진기(45)로 돌아가게 하는 것이다. The second selector valve 45b is a valve provided at a branch point between the second transfer duct 45a and the return duct 45d and is operated by the controller 69 . That is, when the concentration of the contaminant sensed by the second sensor 46 is less than the reference value, the return duct 45d is blocked to allow the gas to move to the dryer 47, and when the concentration is greater than the reference value, the return duct 45d is closed. It is to open the gas to return to the dust collector (45).

제2센서(46)가 감지한 농도가 떨어지지 않고 계속 높다면, 가스는 리턴덕트(45d)와 집진기(45)를 계속적으로 순환하며 정화처리가 반복된다.If the concentration detected by the second sensor 46 continues to be high without falling, the gas continuously circulates through the return duct 45d and the dust collector 45 and the purification process is repeated.

제1센서(44)와 제2센서(46)가 감지하는 농도의 기준치는 다르다. 제2센서(46)의 농도 기준치가 당연히 높다.The reference values of the concentrations detected by the first sensor 44 and the second sensor 46 are different. The concentration reference value of the second sensor 46 is naturally high.

드라이어(47)는 제2이송덕트(45a)를 통과한 가스를 건조시킨다. 즉, 가스에 열을 가하여 가스 내의 수분을 제거하는 것이다. 이를 위해 드라이어(47)의 내부에는 가열부(47a)가 내장된다. 가열부(47a)는, 가열수파이프(55)나 순환파이프(63)를 통해 전달된 열에 의해 발열하여 수분을 말린다. 드라이어(47)에 의해 수분이 제거된 가스는 배기팬(49)을 통해 배기된다.The dryer 47 dries the gas that has passed through the second transfer duct 45a. That is, heat is applied to the gas to remove moisture in the gas. To this end, a heating unit 47a is built in the dryer 47 . The heating unit 47a dries the moisture by generating heat by the heat transferred through the heating water pipe 55 or the circulation pipe 63 . The gas from which moisture has been removed by the dryer 47 is exhausted through the exhaust fan 49 .

한편, 드라이어의 가열부에 열을 공급하기 위한 것으로서, 다수의 히트파이프(51), 워터챔버(53), 가열수파이프(55), 물펌프(56)가 설치된다.On the other hand, as to supply heat to the heating part of the dryer, a plurality of heat pipes 51 , a water chamber 53 , a heated water pipe 55 , and a water pump 56 are installed.

히트파이프(51)는, 각 반응챔버(15)에 접하며, 반응챔버의 열을 전달받아 길이방향으로 이동시키는 열전달수단이다. 위에 설명한 바와 같이, 반응챔버(15)에서는 열이 사용되므로 폐열(사용하고 남은 열)도 발생하는데, 폐열을 이동시켜 워터챔버(53) 내부의 물(W)에 전달하는 것이다. 히트파이프(51)의 단부에는 방열부(51a)가 마련되어 있다.The heat pipe 51 is in contact with each reaction chamber 15 and is a heat transfer means for receiving heat from the reaction chamber and moving it in the longitudinal direction. As described above, since heat is used in the reaction chamber 15 , waste heat (heat remaining after use) is also generated, and the waste heat is transferred to the water W inside the water chamber 53 . A heat dissipation part 51a is provided at the end of the heat pipe 51 .

워터챔버(53)는, 물보충파이프(54)를 통해 전달된 물(W)을 수용하는 물탱크이다. 워터챔버(53)에 모인 물은 히트파이프(51)로부터 전달된 열에 의해 가열된다. The water chamber 53 is a water tank for accommodating the water W transferred through the water replenishment pipe 54 . The water collected in the water chamber 53 is heated by the heat transferred from the heat pipe 51 .

워터챔버(53)와 드라이어(47)의 가열부(47a)는 가열수파이프(55)로 연결된다. 가열수파이프(55)에는 물펌프(56)가 설치된다. 물펌프(56)가 동작하면 워터챔버(53) 내부에서 가열된 물(열수)이 가열수파이프(55)를 통해 드라이어의 가열부(47a)로 이동한다. 가열부(47a)는 가열수에 의해 가열되어 가스 내 수분을 제거한다.The water chamber 53 and the heating part 47a of the dryer 47 are connected by a heated water pipe 55 . A water pump 56 is installed in the heated water pipe 55 . When the water pump 56 operates, the water (hot water) heated inside the water chamber 53 moves to the heating part 47a of the dryer through the heated water pipe 55 . The heating part 47a is heated by heating water to remove moisture in the gas.

또한, 히트파이프의 가열부(47a)에 열을 전달하기 위한 다른 것으로서, 지열하비스터(61), 순환파이프(63), 열수펌프(63a), 보조히터(65)가 추가적으로 더 포함될 수 있다.In addition, as another for transferring heat to the heating unit 47a of the heat pipe, a geothermal harvester 61 , a circulation pipe 63 , a hot water pump 63a , and an auxiliary heater 65 may be further included.

지열하비스터(61)는, 지중에 매설되며 지열에너지를 흡수하고 흡수한 열을, 순환파이프(63) 내부의 물에 전달한다. 순환파이프(63)를 순환하는 물이 지열하비스터(61)를 통과하는 동안 가열되는 것이다. 지열하비스터(61) 자체를 가열하는 열원은, 지하층 내의 고온의 지하수나 스팀 일 수 있다.The geothermal harvester 61 is buried in the ground, absorbs geothermal energy, and transfers the absorbed heat to the water inside the circulation pipe 63 . The water circulating in the circulation pipe 63 is heated while passing through the geothermal harvester 61 . The heat source for heating the geothermal harvester 61 itself may be high-temperature groundwater or steam in the basement.

순환파이프(63)는, 물을 순환시키는 파이프로서, 지열하비스터(61)와 드라이어(47)을 연결한다. 물은 지열하비스터(61)로부터 전달받은 열에너지를 드라이어(47)의 가열부(47a)로 전달하여 가열부가, 가스 내 수분을 제거하게 한다.The circulation pipe 63 is a pipe for circulating water, and connects the geothermal harvester 61 and the dryer 47 . The water transfers the thermal energy received from the geothermal harvester 61 to the heating unit 47a of the dryer 47 so that the heating unit removes moisture in the gas.

보조히터(65)는 순환파이프(63)를 통과하는 물을 가열하는 히터이다. 가령, 지열하비스터(61)로부터 제공되는 열에너지가 충분하지 않을 때, 물을 추가적으로 가열하는 것이다. The auxiliary heater 65 is a heater that heats water passing through the circulation pipe 63 . For example, when the thermal energy provided from the geothermal harvester 61 is not sufficient, the water is additionally heated.

한편, 제2유도덕트(26)의 단부에는 우수탱크(33)가 연결된다. 우수탱크(33)는 우수처리시설(31)로부터 전달된 우수(33a)가 저장되는 시설로서, 분출부(34)와 포집부(35)를 갖는다. Meanwhile, the rainwater tank 33 is connected to the end of the second induction duct 26 . The rainwater tank 33 is a facility in which the rainwater 33a delivered from the rainwater treatment facility 31 is stored, and has a jetting part 34 and a collecting part 35 .

분출부(34)는 제2유도덕트(26)를 통해 전달된 가스를 우수(33a) 내부에 분출하는 역할을 한다. 가스 내부의 분진은 우수(33a)에 의해 대부분 제거될 수 있다. 포집부(35)는 우수(33a)의 수면보다 높게 설치되며 우수를 통과한 가스를 잡아 연결덕트(36)로 유도한다. The ejection unit 34 serves to eject the gas transferred through the second induction duct 26 into the rainwater 33a. Most of the dust in the gas can be removed by rainwater 33a. The collecting part 35 is installed higher than the water surface of the rainwater 33a, and catches the gas passing through the rainwater and guides it to the connection duct 36.

연결덕트(36)는 포집부(35)와 제1유도덕트(25)를 연결하는 덕트로서, 가스펌프(37)를 갖는다. 가스펌프(37)는 포집부(35)를 통해 가스를 흡기한 후 제1유도덕트(25)로 올려 보낸다. 우수탱크(33)를 적용함으로서 스크러버(43)의 부하가 크게 경감될 수 있다.The connecting duct 36 is a duct connecting the collecting part 35 and the first induction duct 25 , and has a gas pump 37 . The gas pump 37 sucks the gas through the collecting part 35 and then sends it up to the first induction duct 25 . By applying the rainwater tank 33, the load of the scrubber 43 can be greatly reduced.

이상, 본 발명을 구체적인 실시예를 통하여 상세하게 설명하였으나, 본 발명은 상기 실시예에 한정하지 않고, 본 발명의 기술적 사상의 범위 내에서 통상의 지식을 가진 자에 의하여 여러 가지 변형이 가능하다.As mentioned above, although the present invention has been described in detail through specific embodiments, the present invention is not limited to the above embodiments, and various modifications are possible by those of ordinary skill within the scope of the technical spirit of the present invention.

10:오염물질 처리장치 11:공장 13:반도체생산설비
15:반응챔버 17:배출덕트 19:가스펌프
21:메인센서 23:메인전환밸브 25:제1유도덕트
26:제2유도덕트 31:우수처리시설 33:우수탱크
33a:우수 34:분출부 35:포집부
36:연결덕트 37:가스펌프 43:스크러버
43a:제1이송덕트 43b:제1전환밸브 43d:리턴덕트
44:제1센서 45:집진기 45a:제2이송덕트
45b:제2전환밸브 45d:리턴덕트 46:제2센서
47:드라이어 47a:가열부 49:배기팬
51:히트파이프 51a:방열부 53:워터챔버
54:물보충파이프 55:가열수파이프 56:물펌프
61:지열하비스터 63:순환파이프 63a:열수펌프
65:보조히터 69:컨트롤러10: Pollutant treatment equipment 11: Factory 13: Semiconductor production facility
15: reaction chamber 17: exhaust duct 19: gas pump
21: main sensor 23: main switching valve 25: first induction duct
26: 2nd induction duct 31: rainwater treatment facility 33: rainwater tank
33a: Excellent 34: Jetting part 35: Collecting part
36: connection duct 37: gas pump 43: scrubber
43a: first transfer duct 43b: first switching valve 43d: return duct
44: first sensor 45: dust collector 45a: second transfer duct
45b: second selector valve 45d: return duct 46: second sensor
47: dryer 47a: heating unit 49: exhaust fan
51: heat pipe 51a: heat dissipation part 53: water chamber
54: water replenishment pipe 55: heated water pipe 56: water pump
61: geothermal harvester 63: circulation pipe 63a: hot water pump
65: auxiliary heater 69: controller

Claims (4)

반도체 생산설비에 연결되며, 반도체 생산 공정 중에 발생하는 가스를 유도하는 배출덕트와;
배출덕트를 통해 이송된 가스를 통과시키며 가스내의 오염물질을 제거하는 스크러버와;
제1이송덕트를 통해 스크러버에 연결되고, 스크러버를 통과한 가스 내의 오염물질을 추가적으로 제거하는 집진기와;
집진기에 제2이송덕트로 연결되며, 제2이송덕트를 통과한 가스를 건조시키는 드라이어와;
드라이어에 의해 건조된 가스를 배기하는 배기팬과;
제어신호를 출력하는 컨트롤러를 포함하고,
상기 제1이송덕트에는;
스크러버를 통과한 가스 내의 잔류 오염물질의 농도를 감지하고, 감지 내용을 컨트롤러에 전달하는 제1센서와,
제1이송덕트에서 분기되어 스크러버에 연결된 리턴덕트와,
제1이송덕트와 리턴덕트의 분기점에 설치되고, 컨트롤러에 의해 동작하여, 스크러버를 통과한 가스 내의 잔류 오염물질의 농도가 기준치 미만일 때 가스를 집진기로 보내고, 기준치 이상일 때 리턴덕트를 통해 스크러버로 돌려보내는 제1전환밸브를 구비하고,
제2이송덕트에는;
집진기를 통과한 가스 내의 잔류 오염물질의 농도를 감지하고, 감지 내용을 컨트롤러에 전달하는 제2센서와,
제2이송덕트에서 분기되어 집진기에 연결된 리턴덕트와,
제2이송덕트와 리턴덕트의 분기점에 설치되고, 컨트롤러에 의해 동작하여, 집진기를 통과한 가스 내의 잔류 오염물질의 농도가 기준치 미만일 때 가스를 드라이어로 보내고, 기준치 이상일 때 리턴덕트를 통해 집진기로 돌려보내는 제2전환밸브를 갖는,
반도체 생산설비에서 배출되는 오염물질 처리장치.an exhaust duct connected to the semiconductor production facility and guiding gas generated during the semiconductor production process;
a scrubber passing the gas transferred through the exhaust duct and removing contaminants in the gas;
a dust collector connected to the scrubber through the first transfer duct and additionally removing contaminants in the gas that has passed through the scrubber;
a dryer connected to the dust collector through a second conveying duct and drying the gas passing through the second conveying duct;
an exhaust fan exhausting the gas dried by the dryer;
A controller for outputting a control signal,
In the first transfer duct;
A first sensor for detecting the concentration of residual contaminants in the gas that has passed through the scrubber and transmitting the detected content to the controller;
a return duct branched from the first transfer duct and connected to the scrubber;
Installed at the junction of the first transfer duct and the return duct, operated by the controller, the gas is sent to the dust collector when the concentration of residual contaminants in the gas that has passed through the scrubber is less than the standard value and a first switching valve to send,
In the second transfer duct;
a second sensor that detects the concentration of residual contaminants in the gas that has passed through the dust collector and transmits the detected content to the controller;
a return duct branched from the second transfer duct and connected to the dust collector;
It is installed at the junction of the second transfer duct and the return duct and is operated by the controller to send the gas to the dryer when the concentration of residual contaminants in the gas that has passed through the dust collector is less than the standard value, and returns it to the dust collector through the return duct when it is above the standard value having a second switching valve to send,
A device for treating pollutants emitted from semiconductor production facilities. 제1항에 있어서,
상기 배출덕트에는;
배출덕트를 통과한 가스 내의 오염물질의 농도를 감지하고 감지내용을 컨트롤러로 전달하는 메인센서와, 메인센서의 하류측에 위치하고, 컨트롤러에 의해 동작하는 메인전환밸브가 설치되며,
메인전환밸브에는;
가스를 스크러버로 보내는 제1유도덕트와, 제1유도덕트와 병렬 연결되고 제1유도덕트의 차단 시 가스를 유도하는 제2유도덕트가 연결되고,
제2유도덕트의 단부에는, 우수처리시설로부터 전달된 우수(雨水)가 수용되는 우수탱크가 연결되되, 우수탱크 내에는 가스를 우수 내부로 분출하는 분출부와, 우수의 수면보다 높게 위치하며 우수를 통과하는 가스를 포집하는 포집부가 설치되고,
포집부와 제1유도덕트는 연결덕트로 접속된,
반도체 생산설비에서 배출되는 오염물질 처리장치.The method of claim 1,
In the exhaust duct;
A main sensor that detects the concentration of pollutants in the gas that has passed through the exhaust duct and transmits the detected content to the controller, and a main switching valve located downstream of the main sensor and operated by the controller are installed,
In the main switching valve;
A first induction duct that sends gas to the scrubber, a second induction duct that is connected in parallel with the first induction duct and induces gas when the first induction duct is blocked is connected,
At the end of the second induction duct, a rainwater tank that receives rainwater delivered from a rainwater treatment facility is connected, and in the rainwater tank, there is a spout for ejecting gas into the rainwater, and it is located higher than the water surface of the rainwater. A collecting unit for collecting gas passing through is installed,
The collecting part and the first induction duct are connected by a connecting duct,
A device for treating pollutants emitted from semiconductor production facilities. 제1항에 있어서,
상기 드라이어의 내부에는, 집진기로부터 넘어온 가스를 가열하여 가스 내 수분을 제거하는 가열부가 내장되고,
가열부에 열을 공급하기 위한 것으로서,
반도체생산설비 내의 반응챔버에 접하며, 반응챔버의 열을 전달받아 이동시키는 히트파이프와,
히트파이프의 연장단부를 수용하고 물이 채워지는 워터챔버와,
워터챔버 내에서 히트파이프의 열에 의해 가열된 가열수를, 드라이어의 가열부로 이동시키는 가열수파이프가 더 포함된,
반도체 생산설비에서 배출되는 오염물질 처리장치.The method of claim 1,
In the interior of the dryer, a heating unit for removing moisture in the gas by heating the gas passed from the dust collector is built-in,
For supplying heat to the heating unit,
A heat pipe that is in contact with the reaction chamber in the semiconductor production facility and receives heat from the reaction chamber and moves it;
a water chamber accommodating the extended end of the heat pipe and filled with water;
A heated water pipe for moving the heated water heated by the heat of the heat pipe in the water chamber to the heating part of the dryer is further included,
A device for treating pollutants emitted from semiconductor production facilities. 제1항에 있어서,
상기 드라이어의 내부에는, 집진기로부터 넘어온 가스를 가열하여 가스 내 수분을 제거하는 가열부가 내장되고,
가열부에 열을 공급하기 위한 것으로서,
지중에 매설되며 지열에너지를 흡수하는 지열하비스터와,
지열하비스터와 드라이어를 연결하며, 물을 순환시켜 지열하비스터의 열을 드라이어로 전달시키는 순환파이프 및 펌프와,
순환파이프 내부의 물을 가열하는 보조히터를 구비하는,
반도체 생산설비에서 배출되는 오염물질 처리장치.The method of claim 1,
In the interior of the dryer, a heating unit for removing moisture in the gas by heating the gas passed from the dust collector is built-in,
For supplying heat to the heating unit,
A geothermal harvester that is buried underground and absorbs geothermal energy;
A circulation pipe and a pump that connects the geothermal harvester and the dryer and circulates water to transfer the heat of the geothermal harvester to the dryer;
Equipped with an auxiliary heater for heating the water inside the circulation pipe,
A device for treating pollutants emitted from semiconductor production facilities.
KR1020220107231A 2022-08-26 2022-08-26 Device for treating pollutant emitted from semiconductor production facility KR102457227B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102703371B1 (en) * 2023-10-17 2024-09-04 김창수 Domestic waste incinerator exhaust white smoke reduction treatment system

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002282651A (en) * 2001-03-28 2002-10-02 Mitsubishi Electric Corp Method and apparatus for treating halogen-containing exhaust gas
KR100377605B1 (en) * 1994-11-29 2003-06-11 아사히 덴카 고교 가부시키가이샤 Method and apparatus for processing waste gas exhausted from chemical vapor deposition equipment
KR20120020506A (en) * 2010-08-30 2012-03-08 대우조선해양 주식회사 Contaminated drain water recovery system for vessel

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100377605B1 (en) * 1994-11-29 2003-06-11 아사히 덴카 고교 가부시키가이샤 Method and apparatus for processing waste gas exhausted from chemical vapor deposition equipment
JP2002282651A (en) * 2001-03-28 2002-10-02 Mitsubishi Electric Corp Method and apparatus for treating halogen-containing exhaust gas
KR20120020506A (en) * 2010-08-30 2012-03-08 대우조선해양 주식회사 Contaminated drain water recovery system for vessel

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102703371B1 (en) * 2023-10-17 2024-09-04 김창수 Domestic waste incinerator exhaust white smoke reduction treatment system

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