CN114788176B - 晶体元件、水晶器件以及电子设备和晶体元件的制造方法 - Google Patents

晶体元件、水晶器件以及电子设备和晶体元件的制造方法

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Publication number
CN114788176B
CN114788176B CN202080080367.2A CN202080080367A CN114788176B CN 114788176 B CN114788176 B CN 114788176B CN 202080080367 A CN202080080367 A CN 202080080367A CN 114788176 B CN114788176 B CN 114788176B
Authority
CN
China
Prior art keywords
crystal
axis
crystal element
holding portion
vibration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202080080367.2A
Other languages
English (en)
Chinese (zh)
Other versions
CN114788176A (zh
Inventor
本田晃基
浪川清一郎
中川省吾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Publication of CN114788176A publication Critical patent/CN114788176A/zh
Application granted granted Critical
Publication of CN114788176B publication Critical patent/CN114788176B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H03H9/02023—Characteristics of piezoelectric layers, e.g. cutting angles consisting of quartz
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02062—Details relating to the vibration mode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/0504—Holders or supports for bulk acoustic wave devices
    • H03H9/0514—Holders or supports for bulk acoustic wave devices consisting of mounting pads or bumps
    • H03H9/0519—Holders or supports for bulk acoustic wave devices consisting of mounting pads or bumps for cantilever
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
    • H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
    • H10N30/088—Shaping or machining of piezoelectric or electrostrictive bodies by machining by cutting or dicing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/09—Forming piezoelectric or electrostrictive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/88—Mounts; Supports; Enclosures; Casings

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
CN202080080367.2A 2019-11-26 2020-11-25 晶体元件、水晶器件以及电子设备和晶体元件的制造方法 Active CN114788176B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019212985 2019-11-26
JP2019-212985 2019-11-26
PCT/JP2020/043779 WO2021106921A1 (ja) 2019-11-26 2020-11-25 水晶素子、水晶デバイス及び電子機器並びに水晶素子の製造方法

Publications (2)

Publication Number Publication Date
CN114788176A CN114788176A (zh) 2022-07-22
CN114788176B true CN114788176B (zh) 2025-08-22

Family

ID=76128691

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080080367.2A Active CN114788176B (zh) 2019-11-26 2020-11-25 晶体元件、水晶器件以及电子设备和晶体元件的制造方法

Country Status (4)

Country Link
US (1) US20230006124A1 (enExample)
JP (1) JP7466568B2 (enExample)
CN (1) CN114788176B (enExample)
WO (1) WO2021106921A1 (enExample)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102571024A (zh) * 2010-11-30 2012-07-11 精工爱普生株式会社 压电振动片、压电模块以及电子装置
JP2018164193A (ja) * 2017-03-27 2018-10-18 京セラクリスタルデバイス株式会社 水晶素子および水晶デバイス

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004165743A (ja) * 2002-11-08 2004-06-10 Toyo Commun Equip Co Ltd 圧電基板、圧電振動素子、圧電振動子、圧電発振器、圧電基板ウェハ、圧電基板ウェハの構造、及び製造方法
US8004157B2 (en) 2005-04-18 2011-08-23 Daishinku Corporation Piezoelectric resonator plate and piezoelectric resonator device
JP5593979B2 (ja) * 2009-11-11 2014-09-24 セイコーエプソン株式会社 振動片、振動子、発振器、センサー及び電子機器
JP5591053B2 (ja) * 2010-10-01 2014-09-17 セイコーエプソン株式会社 振動素子、振動子、発振器及びウェハ
JP5674241B2 (ja) 2010-11-30 2015-02-25 セイコーエプソン株式会社 圧電振動片、圧電振動子、電子デバイス
JP2013046085A (ja) * 2011-08-22 2013-03-04 Seiko Epson Corp 圧電振動素子、圧電振動子、電子デバイス、及び電子機器
JP2013110658A (ja) * 2011-11-24 2013-06-06 Nippon Dempa Kogyo Co Ltd 圧電振動片、及び圧電デバイス
JP6386298B2 (ja) * 2014-08-28 2018-09-05 京セラ株式会社 水晶素子の製造方法
JP6756564B2 (ja) * 2016-09-30 2020-09-16 京セラ株式会社 水晶素子、水晶デバイスおよび水晶素子の製造方法
JP6787735B2 (ja) * 2016-09-30 2020-11-18 京セラ株式会社 水晶素子および水晶デバイス

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102571024A (zh) * 2010-11-30 2012-07-11 精工爱普生株式会社 压电振动片、压电模块以及电子装置
JP2018164193A (ja) * 2017-03-27 2018-10-18 京セラクリスタルデバイス株式会社 水晶素子および水晶デバイス

Also Published As

Publication number Publication date
US20230006124A1 (en) 2023-01-05
WO2021106921A1 (ja) 2021-06-03
JP7466568B2 (ja) 2024-04-12
JPWO2021106921A1 (enExample) 2021-06-03
CN114788176A (zh) 2022-07-22

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