CN114762113B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN114762113B
CN114762113B CN201980102690.2A CN201980102690A CN114762113B CN 114762113 B CN114762113 B CN 114762113B CN 201980102690 A CN201980102690 A CN 201980102690A CN 114762113 B CN114762113 B CN 114762113B
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CN
China
Prior art keywords
power supply
wiring
line
power
power line
Prior art date
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CN201980102690.2A
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English (en)
Chinese (zh)
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CN114762113A (zh
Inventor
冈本淳
武野纮宜
王文桢
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Socionext Inc
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Socionext Inc
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Publication of CN114762113A publication Critical patent/CN114762113A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/427—Power or ground buses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/481—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes on the rear surfaces of the wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays
    • H10D84/968—Macro-architecture
    • H10D84/974—Layout specifications, i.e. inner core regions
    • H10D84/975—Wiring regions or routing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays
    • H10D84/968—Macro-architecture
    • H10D84/974—Layout specifications, i.e. inner core regions
    • H10D84/981—Power supply lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays
    • H10D84/992—Noise prevention, e.g. preventing crosstalk

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN201980102690.2A 2019-12-05 2019-12-05 半导体装置 Active CN114762113B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2019/047688 WO2021111604A1 (ja) 2019-12-05 2019-12-05 半導体装置

Publications (2)

Publication Number Publication Date
CN114762113A CN114762113A (zh) 2022-07-15
CN114762113B true CN114762113B (zh) 2024-11-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980102690.2A Active CN114762113B (zh) 2019-12-05 2019-12-05 半导体装置

Country Status (4)

Country Link
US (2) US12284828B2 (https=)
JP (2) JP7363921B2 (https=)
CN (1) CN114762113B (https=)
WO (1) WO2021111604A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2023053203A1 (https=) * 2021-09-28 2023-04-06
JPWO2023095616A1 (https=) * 2021-11-29 2023-06-01
US20230420369A1 (en) * 2022-06-28 2023-12-28 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit device and manufacturing method
JPWO2024214205A1 (https=) * 2023-04-12 2024-10-17
CN120958979A (zh) * 2023-04-12 2025-11-14 株式会社索思未来 半导体装置
JPWO2024252660A1 (https=) * 2023-06-09 2024-12-12
WO2026074865A1 (ja) * 2024-10-04 2026-04-09 株式会社ソシオネクスト 半導体集積回路装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009124667A (ja) * 2007-01-25 2009-06-04 Panasonic Corp 双方向スイッチ及びその駆動方法
CN104752337A (zh) * 2013-12-30 2015-07-01 国际商业机器公司 半导体结构及其形成方法

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JPS5326689A (en) * 1976-08-25 1978-03-11 Hitachi Ltd Semiconductor integrated circuit unit
JP2972425B2 (ja) * 1992-01-30 1999-11-08 日本電気アイシーマイコンシステム株式会社 半導体集積回路
JPH11102910A (ja) * 1997-09-29 1999-04-13 Hitachi Ltd 半導体集積回路
JP2009177200A (ja) * 1998-05-01 2009-08-06 Sony Corp 半導体記憶装置
JP2000223575A (ja) * 1999-01-28 2000-08-11 Hitachi Ltd 半導体装置の設計方法、半導体装置および半導体装置の製造方法
JP4962173B2 (ja) 2007-07-02 2012-06-27 ソニー株式会社 半導体集積回路
JP2009302198A (ja) * 2008-06-11 2009-12-24 Elpida Memory Inc 半導体チップ、半導体チップ群および半導体装置
JP2011159810A (ja) * 2010-02-01 2011-08-18 Renesas Electronics Corp 半導体集積回路及びその制御方法
JP2012044042A (ja) * 2010-08-20 2012-03-01 Kawasaki Microelectronics Inc 半導体集積回路および半導体集積回路装置
US8530273B2 (en) 2010-09-29 2013-09-10 Guardian Industries Corp. Method of making oxide thin film transistor array
DE102013207324A1 (de) 2012-05-11 2013-11-14 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung und elektronisches Gerät
JP2014165358A (ja) * 2013-02-26 2014-09-08 Panasonic Corp 半導体装置及びその製造方法
EP2884542A3 (en) 2013-12-10 2015-09-02 IMEC vzw Integrated circuit device with power gating switch in back end of line
US10325840B2 (en) 2015-09-25 2019-06-18 Intel Corporation Metal on both sides with power distributed through the silicon
US9754923B1 (en) 2016-05-09 2017-09-05 Qualcomm Incorporated Power gate placement techniques in three-dimensional (3D) integrated circuits (ICs) (3DICs)
EP3324436B1 (en) 2016-11-21 2020-08-05 IMEC vzw An integrated circuit chip with power delivery network on the backside of the chip
JP6825476B2 (ja) * 2017-04-28 2021-02-03 株式会社ソシオネクスト 半導体装置
JPWO2019194007A1 (ja) 2018-04-05 2021-04-08 株式会社ソシオネクスト 半導体集積回路装置
US10950546B1 (en) 2019-09-17 2021-03-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device including back side power supply circuit
US11004789B2 (en) 2019-09-30 2021-05-11 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device including back side power supply circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009124667A (ja) * 2007-01-25 2009-06-04 Panasonic Corp 双方向スイッチ及びその駆動方法
CN104752337A (zh) * 2013-12-30 2015-07-01 国际商业机器公司 半导体结构及其形成方法

Also Published As

Publication number Publication date
CN114762113A (zh) 2022-07-15
JP7639871B2 (ja) 2025-03-05
US20220293634A1 (en) 2022-09-15
US12284828B2 (en) 2025-04-22
JPWO2021111604A1 (https=) 2021-06-10
WO2021111604A1 (ja) 2021-06-10
JP2023171884A (ja) 2023-12-05
JP7363921B2 (ja) 2023-10-18
US20250227996A1 (en) 2025-07-10

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