JPWO2024214205A1 - - Google Patents
Info
- Publication number
- JPWO2024214205A1 JPWO2024214205A1 JP2025513561A JP2025513561A JPWO2024214205A1 JP WO2024214205 A1 JPWO2024214205 A1 JP WO2024214205A1 JP 2025513561 A JP2025513561 A JP 2025513561A JP 2025513561 A JP2025513561 A JP 2025513561A JP WO2024214205 A1 JPWO2024214205 A1 JP WO2024214205A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/90—Masterslice integrated circuits
- H10D84/903—Masterslice integrated circuits comprising field effect technology
- H10D84/907—CMOS gate arrays
- H10D84/968—Macro-architecture
- H10D84/974—Layout specifications, i.e. inner core regions
- H10D84/981—Power supply lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/90—Masterslice integrated circuits
- H10D84/903—Masterslice integrated circuits comprising field effect technology
- H10D84/907—CMOS gate arrays
- H10D84/909—Microarchitecture
- H10D84/959—Connectability characteristics, i.e. diffusion and polysilicon geometries
- H10D84/961—Substrate and well contacts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/10—Integrated device layouts
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2023/014837 WO2024214205A1 (ja) | 2023-04-12 | 2023-04-12 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2024214205A1 true JPWO2024214205A1 (https=) | 2024-10-17 |
Family
ID=93058957
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025513561A Pending JPWO2024214205A1 (https=) | 2023-04-12 | 2023-04-12 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20260033000A1 (https=) |
| JP (1) | JPWO2024214205A1 (https=) |
| CN (1) | CN120917899A (https=) |
| WO (1) | WO2024214205A1 (https=) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11102910A (ja) * | 1997-09-29 | 1999-04-13 | Hitachi Ltd | 半導体集積回路 |
| WO2020065916A1 (ja) * | 2018-09-28 | 2020-04-02 | 株式会社ソシオネクスト | 半導体装置 |
| KR102742350B1 (ko) * | 2018-11-21 | 2024-12-16 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 고체 촬상 소자 |
| US10950546B1 (en) * | 2019-09-17 | 2021-03-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device including back side power supply circuit |
| JP7306470B2 (ja) * | 2019-10-25 | 2023-07-11 | 株式会社ソシオネクスト | 半導体装置 |
| CN114762113B (zh) * | 2019-12-05 | 2024-11-01 | 株式会社索思未来 | 半导体装置 |
-
2023
- 2023-04-12 JP JP2025513561A patent/JPWO2024214205A1/ja active Pending
- 2023-04-12 WO PCT/JP2023/014837 patent/WO2024214205A1/ja not_active Ceased
- 2023-04-12 CN CN202380096942.1A patent/CN120917899A/zh active Pending
-
2025
- 2025-10-07 US US19/351,386 patent/US20260033000A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20260033000A1 (en) | 2026-01-29 |
| CN120917899A (zh) | 2025-11-07 |
| WO2024214205A1 (ja) | 2024-10-17 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20260316 |