JPWO2023053203A1 - - Google Patents

Info

Publication number
JPWO2023053203A1
JPWO2023053203A1 JP2023550789A JP2023550789A JPWO2023053203A1 JP WO2023053203 A1 JPWO2023053203 A1 JP WO2023053203A1 JP 2023550789 A JP2023550789 A JP 2023550789A JP 2023550789 A JP2023550789 A JP 2023550789A JP WO2023053203 A1 JPWO2023053203 A1 JP WO2023053203A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023550789A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023053203A1 publication Critical patent/JPWO2023053203A1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90Masterslice integrated circuits
    • H10D84/903Masterslice integrated circuits comprising field effect technology
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90Masterslice integrated circuits
    • H10D84/903Masterslice integrated circuits comprising field effect technology
    • H10D84/907CMOS gate arrays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10Integrated device layouts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/427Power or ground buses
JP2023550789A 2021-09-28 2021-09-28 Pending JPWO2023053203A1 (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/035637 WO2023053203A1 (ja) 2021-09-28 2021-09-28 半導体集積回路装置

Publications (1)

Publication Number Publication Date
JPWO2023053203A1 true JPWO2023053203A1 (https=) 2023-04-06

Family

ID=85781514

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023550789A Pending JPWO2023053203A1 (https=) 2021-09-28 2021-09-28

Country Status (3)

Country Link
US (1) US20240234322A1 (https=)
JP (1) JPWO2023053203A1 (https=)
WO (1) WO2023053203A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021075540A1 (ja) * 2019-10-18 2021-04-22 株式会社ソシオネクスト 半導体集積回路装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009016683A (ja) * 2007-07-06 2009-01-22 Panasonic Corp スタンダードセルを用いた半導体集積回路、及びスタンダードセルライブラリ
US20180151494A1 (en) * 2016-11-28 2018-05-31 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having buried metal line and fabrication method of the same
WO2021075353A1 (ja) * 2019-10-18 2021-04-22 株式会社ソシオネクスト 半導体集積回路装置
WO2021111604A1 (ja) * 2019-12-05 2021-06-10 株式会社ソシオネクスト 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009016683A (ja) * 2007-07-06 2009-01-22 Panasonic Corp スタンダードセルを用いた半導体集積回路、及びスタンダードセルライブラリ
US20180151494A1 (en) * 2016-11-28 2018-05-31 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having buried metal line and fabrication method of the same
WO2021075353A1 (ja) * 2019-10-18 2021-04-22 株式会社ソシオネクスト 半導体集積回路装置
WO2021111604A1 (ja) * 2019-12-05 2021-06-10 株式会社ソシオネクスト 半導体装置

Also Published As

Publication number Publication date
WO2023053203A1 (ja) 2023-04-06
US20240234322A1 (en) 2024-07-11

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