CN114753002B - 一种提高MOCVD生长GaAs本征掺杂均匀性的方法 - Google Patents
一种提高MOCVD生长GaAs本征掺杂均匀性的方法 Download PDFInfo
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- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 27
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000012159 carrier gas Substances 0.000 claims abstract description 17
- 239000007921 spray Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 2
- 239000006227 byproduct Substances 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 10
- 239000004065 semiconductor Substances 0.000 abstract description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 5
- 229910000070 arsenic hydride Inorganic materials 0.000 description 4
- 238000005457 optimization Methods 0.000 description 4
- HJUGFYREWKUQJT-UHFFFAOYSA-N tetrabromomethane Chemical compound BrC(Br)(Br)Br HJUGFYREWKUQJT-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000001183 hydrocarbyl group Chemical group 0.000 description 2
- 229910005258 GaBr3 Inorganic materials 0.000 description 1
- 229910005267 GaCl3 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- SRVXDMYFQIODQI-UHFFFAOYSA-K gallium(iii) bromide Chemical compound Br[Ga](Br)Br SRVXDMYFQIODQI-UHFFFAOYSA-K 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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Abstract
本发明公开了一种提高MOCVD生长GaAs本征掺杂均匀性的方法，属于半导体材料生长领域，该方法包括：在低Ⅴ/Ⅲ比情况下，用MOCVD生长的本征掺杂GaAs时，会对GaAs形成C掺杂，当外圈C掺杂浓度低于内圈时，通过增大流经MOCVD反应腔内喷淋头的第三进气孔043载气流量，使得外圈的V族源浓度相对内圈降低，从而使得外圈的掺杂浓度相对内圈升高，提高内外圈掺杂均匀性。当外圈C掺杂浓度高于内圈时，通过减小流经MOCVD反应腔内喷淋头的第三进气孔043的载气流量，使得外圈的V族源浓度相对内圈升高，从而使得外圈的掺杂浓度相对内圈降低，提高内外圈掺杂均匀性，通过本发明提供方法，可以解决MOCVD生长GaAs本征掺杂的内外圈掺杂不均匀问题，提升片内该膜层的掺杂均匀性。
Description
技术领域
本发明属于半导体材料生长领域，具体涉及一种提高MOCVD生长GaAs本征掺杂均匀性的方法。
背景技术
GaAs材料的P型掺杂剂通常有Zn和Be，但是这两者在GaAs中的扩散系数较大，当生长陡峭界面时，Zn和Be容易扩散入相邻层的材料而很难满足要求，C因为在GaAs中较低的扩散系数和较高的固溶度而广泛应用。
在MOCVD生长掺杂C的GaAs材料时，通常有外部掺杂和本征掺杂两种方式，外部掺杂剂通常为CCl4和CBr4，CCl4和CBr4在掺杂时，因GaCl3和GaBr3为气态，会在材料内形成Ga空位，较多的Ga空位GaAs材料对某些器件应用带来负面影响，本征掺杂通常在较低的V/III比条件下，因为V/III比较低，有机源的烃基中的C会在材料中替代As，形成C掺杂，这种掺杂方式形成的材料内Ga空位较少，在某些器件中得到应用。
发明内容
本发明解决的问题在于提供一种提高MOCVD生长GaAs本征掺杂均匀性的方法。
本发明是通过以下技术方案来实现：
一种提高MOCVD生长GaAs本征掺杂均匀性的方法，其特征在于：提供一反应腔，反应腔内部存在平行且中心重合的第一圆形基板和第二圆形基板，第一圆形基板的中心区域有一组圆柱状喷淋头，喷淋头由靠近所述的第一圆形基板的第一进气孔、靠近第二圆形基板的第三进气孔和第一进气孔与第三进气孔之间的第二进气孔组成，在第二圆形基板表面与喷淋头在第二圆形基板表面的垂直投影区域无交叠的区域，装置有与第二圆形基板位置相对固定的第三圆形基板，将基片放在第三圆形基板上，并通过对第三圆形基板加热使得基片升温至生长温度，第二圆形基板和第三圆形基板分别绕各自中心自转，经由第一进气孔通入载气，经由第二进气孔通入载气及含有TMGa的气体，经由第三进气孔通入载气及AsH3，AsH3与TMGa在基片表面水平流过，并在基片表面生成含有C杂质的GaAs薄膜，未反应的气体及反应副产物经由排气孔排出，在经由第三进气孔的AsH3摩尔流量与所述的经由第二进气孔进入的TMGa摩尔流量的比值大于等于0.5且小于等于2的条件下，当外圈C掺杂浓度低于内圈时，增大流经MOCVD反应腔内喷淋头的第三进气孔载气流量，使得外圈的AsH3浓度相对内圈降低，从而使得外圈的C掺杂浓度相对内圈升高，调整内外圈掺杂均匀性。当外圈C掺杂浓度高于内圈时，通过减小流经MOCVD反应腔内喷淋头的第三进气孔的载气流量，使得外圈的AsH3浓度相对内圈升高，从而使得外圈的C掺杂浓度相对内圈降低，调整内外圈掺杂均匀性。
优选的，所述的载气为氢气或者氮气；
优选的，所述的生长温度介于400℃-600℃。
与现有技术相比，本发明具有以下有益的技术效果：本方的方法简单有效，而尚未见到公开的优化MOCVD生长GaAs本征掺杂均匀性的相关方法。
附图说明
图1为本发明涉及的装置示意图。
图2为本发明方法优化前制备的整片6寸自掺杂GaAs外延薄膜中心区域的XRD测试失配结果。
图3为本发明方法优化前制备的整片6寸自掺杂GaAs外延薄膜中心到边沿1/2半径区域的XRD测试失配结果。
图4为本发明方法优化前制备的整片6寸自掺杂GaAs外延薄膜距离圆片边沿5mm区域的XRD测试失配结果。
图5为本发明方法优化后制备的整片6寸自掺杂GaAs外延薄膜中心区域的XRD测试失配结果。
图6为本发明方法优化后制备的整片6寸自掺杂GaAs外延薄膜中心到边沿1/2半径区域的XRD测试失配结果。
图7为本发明方法优化后制备的整片6寸自掺杂GaAs外延薄膜距离圆片边沿5mm区域的XRD测试失配结果。
元件标号说明：
02 第一圆形基板
03 第二圆形基板
041 第一进气孔
042 第二进气孔
043 第三进气孔
05 排气孔
07 第三圆形基板
具体实施方式
下面结合具体的实施例对本发明做进一步的详细说明，所述是对本发明的解释而不是限定。
用MOCVD生长本征掺杂GaAs时，在低的Ⅴ/Ⅲ比条件下，基片表面不同区域C掺杂浓度的大小取决于该区域As元素与烃基中的C元素的竞争，可以利用改变AsH3载气流量的办法，改变生产过程中沿着圆片径向的As元素分布，从而调整不同区域C与As的竞争，达到调节片内掺杂均匀性，即通过调整第三进气孔043位置的载气流量，实现基片表面掺杂均匀性的调节。
使用如图1所示的MOCVD反应腔生长6寸自掺杂GaAs层，该MOCVD包含了一反应腔，反应腔内部存在平行且中心重合的第一圆形基板02和第二圆形基板03，第一圆形基板02的中心区域有一组圆柱状喷淋头，喷淋头由靠近所述的第一圆形基板02的第一进气孔041、靠近第二圆形基板03的第三进气孔043和第一进气孔041与第三进气孔043之间的第二进气孔042组成，在第二圆形基板03表面与喷淋头在第二圆形基板03表面的垂直投影区域无交叠的区域，装置有与第二圆形基板03位置相对固定的第三圆形基板07。
将基片放在第三圆形基板07上，将基片加热至560℃，第一步，喷淋头的第一进气孔041通入流量为12L/min的载气，第三进气孔043通入流量为12L/min载气氢气和10sccm砷烷，第二进气孔042通入150sccm携带有TMGa的氢气及载气，生长1200s。
生长结束后，沿着径向测量不同位置的XRD，中心标记为C，中心到边沿1/2处标记为M，距边沿5mm处标记为E，得到径向上不同位置的失配(strained mismatch)，进而得到不同位置的C掺杂浓度，图2、图3和图4的S峰分别是基片上C、M和E位置上重掺C的峰，可见，片内均匀性较差，C与E相差24ppm，接近10％差异，从中心到边沿掺杂浓度越来越小。
为了优化单片的C掺杂均匀性，第二次生长时，保持其余条件均不变，将流经第三进气孔043的载气流量调整为16L/min，流经第一进气孔041的流量调整为8L/min，生长完成后的C、M和E位置的XRD测量结果如图5、图6和图7所示，C与E之间仅差7ppm，差异小于3％，内圈与外圈的掺杂分布更加均匀。
以上显示和描述了本发明的基本原理和主要特征和本发明的优点。本行业的技术人员应该了解，本发明不受上述实施例的限制，上述实施例和说明书中描述的只是说明本发明的原理，在不脱离本发明精神和范围的前提下，本发明还会有各种变化和改进，这些变化和改进都落入要求保护的本发明范围内。本发明要求保护范围由所附的权利要求书及其等效物界定。
Claims (3)
1.一种提高MOCVD生长GaAs本征掺杂均匀性的方法，其特征在于：提供一反应腔，反应腔内部存在平行且中心重合的第一圆形基板(02)和第二圆形基板(03)，第一圆形基板(02)的中心区域有一组圆柱状喷淋头，喷淋头由靠近所述的第一圆形基板(02)的第一进气孔(041)、靠近第二圆形基板(03)的第三进气孔(043)和第一进气孔(041)与第三进气孔(043)之间的第二进气孔(042)组成，在第二圆形基板(03)表面与喷淋头在第二圆形基板(03)表面的垂直投影区域无交叠的区域，装置有与第二圆形基板(03)位置相对固定的第三圆形基板(07)，将基片放在第三圆形基板(07)上，并通过对第三圆形基板(07)加热使得基片升温至生长温度，第二圆形基板(03)和第三圆形基板(07)分别绕各自中心自转，经由第一进气孔(041)通入载气，经由第二进气孔(042)通入载气及含有TMGa的气体，经由第三进气孔(043)通入载气及AsH3，AsH3与TMGa在基片表面水平流过，并在基片表面生成含有C杂质的GaAs薄膜，未反应的气体及反应副产物经由排气孔(05)排出，在经由第三进气孔(043)的AsH3摩尔流量与所述的经由第二进气孔(042)进入的TMGa摩尔流量的比值大于等于0.5且小于等于2的条件下，当外圈C掺杂浓度低于内圈时，增大流经MOCVD反应腔内喷淋头的第三进气孔(043)载气流量，使得外圈的AsH3浓度相对内圈降低，从而使得外圈的C掺杂浓度相对内圈升高，调整内外圈掺杂均匀性，当外圈C掺杂浓度高于内圈时，通过减小流经MOCVD反应腔内喷淋头的第三进气孔(043)的载气流量，使得外圈的AsH3浓度相对内圈升高，从而使得外圈的C掺杂浓度相对内圈降低，调整内外圈掺杂均匀性。
2.根据权利要求1所述的一种提高MOCVD生长GaAs本征掺杂均匀性的方法，其特征在于：所述的载气为氢气或者氮气。
3.根据权利要求1所述的一种提高MOCVD生长GaAs本征掺杂均匀性的方法，其特征在于：所述的生长温度为400℃-600℃。
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| JPH02143518A (ja) * | 1988-11-25 | 1990-06-01 | Toshiba Corp | ▲ｉｉｉ▼−▲ｖ▼族化合物半導体の気相成長方法 |
| JPH06124908A (ja) * | 1992-10-12 | 1994-05-06 | Furukawa Electric Co Ltd:The | 有機金属気相成長法 |
| US5298763A (en) * | 1992-11-02 | 1994-03-29 | Motorola, Inc. | Intrinsically doped semiconductor structure and method for making |
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