CN1146996C - 含有逻辑电路和存储电路的半导体器件 - Google Patents
含有逻辑电路和存储电路的半导体器件 Download PDFInfo
- Publication number
- CN1146996C CN1146996C CNB991259610A CN99125961A CN1146996C CN 1146996 C CN1146996 C CN 1146996C CN B991259610 A CNB991259610 A CN B991259610A CN 99125961 A CN99125961 A CN 99125961A CN 1146996 C CN1146996 C CN 1146996C
- Authority
- CN
- China
- Prior art keywords
- memory cell
- bit line
- word line
- contact hole
- dielectric film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 238000009792 diffusion process Methods 0.000 claims description 54
- 239000004020 conductor Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 99
- 239000004411 aluminium Substances 0.000 description 50
- 229910052782 aluminium Inorganic materials 0.000 description 50
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 50
- 239000011229 interlayer Substances 0.000 description 22
- 238000005516 engineering process Methods 0.000 description 15
- 238000003860 storage Methods 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 208000005189 Embolism Diseases 0.000 description 3
- 238000012217 deletion Methods 0.000 description 2
- 230000037430 deletion Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/41—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP34988398A JP3159191B2 (ja) | 1998-12-09 | 1998-12-09 | 半導体装置 |
JP349883/1998 | 1998-12-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1256517A CN1256517A (zh) | 2000-06-14 |
CN1146996C true CN1146996C (zh) | 2004-04-21 |
Family
ID=18406767
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB991259610A Expired - Fee Related CN1146996C (zh) | 1998-12-09 | 1999-12-09 | 含有逻辑电路和存储电路的半导体器件 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6630707B1 (zh) |
JP (1) | JP3159191B2 (zh) |
KR (1) | KR100465009B1 (zh) |
CN (1) | CN1146996C (zh) |
TW (1) | TW439260B (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8183619B1 (en) | 2000-03-30 | 2012-05-22 | Chang Mark S | Method and system for providing contact to a first polysilicon layer in a flash memory device |
US6496402B1 (en) * | 2000-10-17 | 2002-12-17 | Intel Corporation | Noise suppression for open bit line DRAM architectures |
WO2002067320A1 (fr) * | 2001-02-22 | 2002-08-29 | Sharp Kabushiki Kaisha | Dispositif de stockage a semi-conducteurs et circuit integre a semi-conducteurs |
JP3884397B2 (ja) * | 2003-04-25 | 2007-02-21 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US7476945B2 (en) * | 2004-03-17 | 2009-01-13 | Sanyo Electric Co., Ltd. | Memory having reduced memory cell size |
JP4381278B2 (ja) * | 2004-10-14 | 2009-12-09 | 株式会社東芝 | 不揮発性半導体記憶装置の制御方法 |
JP2008113017A (ja) * | 2007-12-03 | 2008-05-15 | Toshiba Corp | 半導体装置 |
WO2015002961A1 (en) | 2013-07-02 | 2015-01-08 | Valspar Sourcing, Inc. | Coating compositions for packaging articles such as food and beverage containers |
US10351714B2 (en) | 2013-07-02 | 2019-07-16 | Swimc Llc | Coating compositions for packaging articles such as food and beverage containers |
WO2016151866A1 (ja) * | 2015-03-26 | 2016-09-29 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US10279565B2 (en) | 2016-02-11 | 2019-05-07 | Guardian Glass, LLC | Vacuum insulating glass window unit including edge seal and/or method of making the same |
KR102363670B1 (ko) * | 2017-08-23 | 2022-02-16 | 삼성전자주식회사 | 메모리 장치 및 메모리 장치의 동작 방법 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6310395A (ja) | 1986-07-02 | 1988-01-16 | Hitachi Ltd | 半導体メモリ装置 |
DE3831538C2 (de) * | 1987-09-18 | 1996-03-28 | Toshiba Kawasaki Kk | Elektrisch löschbare und programmierbare Halbleiter-Speichervorrichtung |
JP2902666B2 (ja) | 1989-03-31 | 1999-06-07 | 株式会社東芝 | ダイナミック型半導体記憶装置 |
JPH0982921A (ja) * | 1995-09-11 | 1997-03-28 | Rohm Co Ltd | 半導体記憶装置、その製造方法および半導体記憶装置の仮想グランドアレイ接続方法 |
US5900661A (en) * | 1996-09-18 | 1999-05-04 | Nippon Steel Corporation | EEPROM with bit lines below word lines |
JPH10177797A (ja) * | 1996-12-17 | 1998-06-30 | Toshiba Corp | 半導体記憶装置 |
US6177716B1 (en) * | 1997-01-02 | 2001-01-23 | Texas Instruments Incorporated | Low loss capacitor structure |
JPH1154731A (ja) * | 1997-07-31 | 1999-02-26 | Nec Corp | 半導体装置 |
KR100247228B1 (ko) * | 1997-10-04 | 2000-03-15 | 윤종용 | 워드라인과 자기정렬된 부우스팅 라인을 가지는불휘발성 반도체 메모리 |
JP3540579B2 (ja) * | 1997-11-07 | 2004-07-07 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
JP3853981B2 (ja) * | 1998-07-02 | 2006-12-06 | 株式会社東芝 | 半導体記憶装置の製造方法 |
US6084262A (en) * | 1999-08-19 | 2000-07-04 | Worldwide Semiconductor Mfg | Etox cell programmed by band-to-band tunneling induced substrate hot electron and read by gate induced drain leakage current |
-
1998
- 1998-12-09 JP JP34988398A patent/JP3159191B2/ja not_active Expired - Fee Related
-
1999
- 1999-12-07 US US09/456,978 patent/US6630707B1/en not_active Expired - Lifetime
- 1999-12-07 TW TW088121527A patent/TW439260B/zh not_active IP Right Cessation
- 1999-12-08 KR KR10-1999-0055703A patent/KR100465009B1/ko not_active IP Right Cessation
- 1999-12-09 CN CNB991259610A patent/CN1146996C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2000174239A (ja) | 2000-06-23 |
KR100465009B1 (ko) | 2005-01-13 |
TW439260B (en) | 2001-06-07 |
CN1256517A (zh) | 2000-06-14 |
JP3159191B2 (ja) | 2001-04-23 |
US6630707B1 (en) | 2003-10-07 |
KR20000047993A (ko) | 2000-07-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: NEC ELECTRONICS TAIWAN LTD. Free format text: FORMER OWNER: NIPPON ELECTRIC CO., LTD. Effective date: 20030403 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20030403 Address after: Kanagawa, Japan Applicant after: NEC Corp. Address before: Tokyo, Japan Applicant before: NEC Corp. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20040421 Termination date: 20100111 |