CN1146604C - 经分馏的线型酚醛清漆树脂和由其得到的光刻胶组合物 - Google Patents

经分馏的线型酚醛清漆树脂和由其得到的光刻胶组合物 Download PDF

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Publication number
CN1146604C
CN1146604C CNB988122332A CN98812233A CN1146604C CN 1146604 C CN1146604 C CN 1146604C CN B988122332 A CNB988122332 A CN B988122332A CN 98812233 A CN98812233 A CN 98812233A CN 1146604 C CN1146604 C CN 1146604C
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CN
China
Prior art keywords
water
solution
photoresist
organic polar
soluble organic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB988122332A
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English (en)
Chinese (zh)
Other versions
CN1304420A (zh
Inventor
Md
M·D·拉曼
M·M·库克
卢炳宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AZ Electronic Materials Japan Co Ltd
Original Assignee
Clariant International Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clariant International Ltd filed Critical Clariant International Ltd
Publication of CN1304420A publication Critical patent/CN1304420A/zh
Application granted granted Critical
Publication of CN1146604C publication Critical patent/CN1146604C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Materials For Photolithography (AREA)
CNB988122332A 1997-12-15 1998-12-01 经分馏的线型酚醛清漆树脂和由其得到的光刻胶组合物 Expired - Fee Related CN1146604C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/991,034 US6045966A (en) 1997-12-15 1997-12-15 Fractionated novolak resin and photoresist composition therefrom
US08/991,034 1997-12-15

Publications (2)

Publication Number Publication Date
CN1304420A CN1304420A (zh) 2001-07-18
CN1146604C true CN1146604C (zh) 2004-04-21

Family

ID=25536786

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB988122332A Expired - Fee Related CN1146604C (zh) 1997-12-15 1998-12-01 经分馏的线型酚醛清漆树脂和由其得到的光刻胶组合物

Country Status (9)

Country Link
US (1) US6045966A (https=)
EP (1) EP1042381B1 (https=)
JP (1) JP2002508415A (https=)
KR (1) KR100551937B1 (https=)
CN (1) CN1146604C (https=)
DE (1) DE69835693D1 (https=)
MY (1) MY114498A (https=)
TW (1) TW448199B (https=)
WO (1) WO1999031157A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6936680B2 (en) * 2000-12-12 2005-08-30 Chang Chun Plastics Co., Ltd. Method of producing novolak resin
JP3694692B2 (ja) * 2003-12-11 2005-09-14 丸善石油化学株式会社 レジスト用ポリマー溶液およびその製造方法
KR20070108713A (ko) * 2006-05-08 2007-11-13 주식회사 동진쎄미켐 포토레지스트 조성물
US7642333B2 (en) * 2007-05-21 2010-01-05 Georgia-Pacific Chemicals Llc Anhydride and resorcinol latent catalyst system for improving cure characteristics of phenolic resins
WO2012026465A1 (ja) * 2010-08-27 2012-03-01 住友ベークライト株式会社 フォトレジスト用樹脂組成物
JP2013195497A (ja) 2012-03-16 2013-09-30 Sumitomo Bakelite Co Ltd フォトレジスト用樹脂組成物
JP6221316B2 (ja) * 2012-05-11 2017-11-01 住友ベークライト株式会社 フォトレジスト用樹脂組成物の製造方法、フォトレジストの製造方法および液晶デバイスの製造方法
TW201806996A (zh) * 2016-04-06 2018-03-01 迪愛生股份有限公司 酚醛清漆型樹脂及抗蝕劑材料

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2590342B2 (ja) * 1986-11-08 1997-03-12 住友化学工業株式会社 ポジ型フォトレジスト用ノボラック樹脂及びそれを含有するポジ型フォトレジスト組成物
CA2023791A1 (en) * 1989-08-24 1991-02-25 Ayako Ida Radiation-sensitive positive resist composition
JPH03253860A (ja) * 1990-03-05 1991-11-12 Fuji Photo Film Co Ltd ポジ型フオトレジスト組成物
US5750632A (en) * 1994-12-30 1998-05-12 Clariant Finance (Bvi) Limited Isolation of novolak resin by low temperature sub surface forced steam distillation
TW442710B (en) * 1995-12-07 2001-06-23 Clariant Finance Bvi Ltd Isolation of novolak resin without high temperature distillation and photoresist composition therefrom
US5910559A (en) * 1996-12-18 1999-06-08 Clariant Finance (Bvi) Limited Fractionated novolak resin from cresol-formaldehyde reaction mixture and photoresist composition therefrom
US5853954A (en) * 1996-12-18 1998-12-29 Clariant Finance (Bvi) Limited Fractionated novolak resin and photoresist composition therefrom

Also Published As

Publication number Publication date
TW448199B (en) 2001-08-01
MY114498A (en) 2002-10-31
EP1042381A1 (en) 2000-10-11
DE69835693D1 (de) 2006-10-05
US6045966A (en) 2000-04-04
EP1042381B1 (en) 2006-08-23
WO1999031157A1 (en) 1999-06-24
KR20010033157A (ko) 2001-04-25
KR100551937B1 (ko) 2006-02-20
JP2002508415A (ja) 2002-03-19
CN1304420A (zh) 2001-07-18

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: AZ ELECTRONIC MATERIALS JAPAN

Free format text: FORMER OWNER: CLARIANT INTERNATIONAL LTD.

Effective date: 20050513

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20050513

Address after: Tokyo, Japan

Patentee after: AZ Electronic Materials Japan Co., Ltd.

Address before: Swiss Mu Tengci

Patentee before: Keralyant International Co., Ltd.

C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee