DE69835693D1 - Fraktioniertes novolakharz und photoresistzusammensetzung daraus - Google Patents

Fraktioniertes novolakharz und photoresistzusammensetzung daraus

Info

Publication number
DE69835693D1
DE69835693D1 DE69835693T DE69835693T DE69835693D1 DE 69835693 D1 DE69835693 D1 DE 69835693D1 DE 69835693 T DE69835693 T DE 69835693T DE 69835693 T DE69835693 T DE 69835693T DE 69835693 D1 DE69835693 D1 DE 69835693D1
Authority
DE
Germany
Prior art keywords
photoresistic
fractional
composition
novolac resin
novolac
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69835693T
Other languages
German (de)
English (en)
Inventor
Dalil Rahman
M Cook
Ping-Hung Lu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EMD Performance Materials Corp
Original Assignee
AZ Electronic Materials USA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AZ Electronic Materials USA Corp filed Critical AZ Electronic Materials USA Corp
Application granted granted Critical
Publication of DE69835693D1 publication Critical patent/DE69835693D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00Condensation polymers of aldehydes or ketones with phenols only
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C08G8/08Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/0226Quinonediazides characterised by the non-macromolecular additives
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Materials For Photolithography (AREA)
DE69835693T 1997-12-15 1998-12-01 Fraktioniertes novolakharz und photoresistzusammensetzung daraus Expired - Lifetime DE69835693D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/991,034 US6045966A (en) 1997-12-15 1997-12-15 Fractionated novolak resin and photoresist composition therefrom
PCT/EP1998/007754 WO1999031157A1 (en) 1997-12-15 1998-12-01 Fractionated novolak resin and photoresist composition therefrom

Publications (1)

Publication Number Publication Date
DE69835693D1 true DE69835693D1 (de) 2006-10-05

Family

ID=25536786

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69835693T Expired - Lifetime DE69835693D1 (de) 1997-12-15 1998-12-01 Fraktioniertes novolakharz und photoresistzusammensetzung daraus

Country Status (9)

Country Link
US (1) US6045966A (https=)
EP (1) EP1042381B1 (https=)
JP (1) JP2002508415A (https=)
KR (1) KR100551937B1 (https=)
CN (1) CN1146604C (https=)
DE (1) DE69835693D1 (https=)
MY (1) MY114498A (https=)
TW (1) TW448199B (https=)
WO (1) WO1999031157A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6936680B2 (en) * 2000-12-12 2005-08-30 Chang Chun Plastics Co., Ltd. Method of producing novolak resin
JP3694692B2 (ja) * 2003-12-11 2005-09-14 丸善石油化学株式会社 レジスト用ポリマー溶液およびその製造方法
KR20070108713A (ko) * 2006-05-08 2007-11-13 주식회사 동진쎄미켐 포토레지스트 조성물
US7642333B2 (en) * 2007-05-21 2010-01-05 Georgia-Pacific Chemicals Llc Anhydride and resorcinol latent catalyst system for improving cure characteristics of phenolic resins
WO2012026465A1 (ja) * 2010-08-27 2012-03-01 住友ベークライト株式会社 フォトレジスト用樹脂組成物
JP2013195497A (ja) 2012-03-16 2013-09-30 Sumitomo Bakelite Co Ltd フォトレジスト用樹脂組成物
JP6221316B2 (ja) * 2012-05-11 2017-11-01 住友ベークライト株式会社 フォトレジスト用樹脂組成物の製造方法、フォトレジストの製造方法および液晶デバイスの製造方法
TW201806996A (zh) * 2016-04-06 2018-03-01 迪愛生股份有限公司 酚醛清漆型樹脂及抗蝕劑材料

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2590342B2 (ja) * 1986-11-08 1997-03-12 住友化学工業株式会社 ポジ型フォトレジスト用ノボラック樹脂及びそれを含有するポジ型フォトレジスト組成物
CA2023791A1 (en) * 1989-08-24 1991-02-25 Ayako Ida Radiation-sensitive positive resist composition
JPH03253860A (ja) * 1990-03-05 1991-11-12 Fuji Photo Film Co Ltd ポジ型フオトレジスト組成物
US5750632A (en) * 1994-12-30 1998-05-12 Clariant Finance (Bvi) Limited Isolation of novolak resin by low temperature sub surface forced steam distillation
TW442710B (en) * 1995-12-07 2001-06-23 Clariant Finance Bvi Ltd Isolation of novolak resin without high temperature distillation and photoresist composition therefrom
US5910559A (en) * 1996-12-18 1999-06-08 Clariant Finance (Bvi) Limited Fractionated novolak resin from cresol-formaldehyde reaction mixture and photoresist composition therefrom
US5853954A (en) * 1996-12-18 1998-12-29 Clariant Finance (Bvi) Limited Fractionated novolak resin and photoresist composition therefrom

Also Published As

Publication number Publication date
TW448199B (en) 2001-08-01
MY114498A (en) 2002-10-31
CN1146604C (zh) 2004-04-21
EP1042381A1 (en) 2000-10-11
US6045966A (en) 2000-04-04
EP1042381B1 (en) 2006-08-23
WO1999031157A1 (en) 1999-06-24
KR20010033157A (ko) 2001-04-25
KR100551937B1 (ko) 2006-02-20
JP2002508415A (ja) 2002-03-19
CN1304420A (zh) 2001-07-18

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Legal Events

Date Code Title Description
8332 No legal effect for de