KR100551937B1 - 분별된 노볼락 수지 및 그로부터의 포토레지스트 조성물 - Google Patents

분별된 노볼락 수지 및 그로부터의 포토레지스트 조성물 Download PDF

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Publication number
KR100551937B1
KR100551937B1 KR1020007006534A KR20007006534A KR100551937B1 KR 100551937 B1 KR100551937 B1 KR 100551937B1 KR 1020007006534 A KR1020007006534 A KR 1020007006534A KR 20007006534 A KR20007006534 A KR 20007006534A KR 100551937 B1 KR100551937 B1 KR 100551937B1
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KR
South Korea
Prior art keywords
water
solution
photoresist
soluble organic
polar solvent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020007006534A
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English (en)
Korean (ko)
Other versions
KR20010033157A (ko
Inventor
라만엠달릴
쿡미첼엠
루핑훙
Original Assignee
에이제토 엘렉토로닉 마티리알즈 가부시키가이샤
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Publication of KR20010033157A publication Critical patent/KR20010033157A/ko
Application granted granted Critical
Publication of KR100551937B1 publication Critical patent/KR100551937B1/ko
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Materials For Photolithography (AREA)
KR1020007006534A 1997-12-15 1998-12-01 분별된 노볼락 수지 및 그로부터의 포토레지스트 조성물 Expired - Fee Related KR100551937B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US8/991,034 1997-12-15
US08/991,034 US6045966A (en) 1997-12-15 1997-12-15 Fractionated novolak resin and photoresist composition therefrom
US08/991,034 1997-12-15

Publications (2)

Publication Number Publication Date
KR20010033157A KR20010033157A (ko) 2001-04-25
KR100551937B1 true KR100551937B1 (ko) 2006-02-20

Family

ID=25536786

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020007006534A Expired - Fee Related KR100551937B1 (ko) 1997-12-15 1998-12-01 분별된 노볼락 수지 및 그로부터의 포토레지스트 조성물

Country Status (9)

Country Link
US (1) US6045966A (https=)
EP (1) EP1042381B1 (https=)
JP (1) JP2002508415A (https=)
KR (1) KR100551937B1 (https=)
CN (1) CN1146604C (https=)
DE (1) DE69835693D1 (https=)
MY (1) MY114498A (https=)
TW (1) TW448199B (https=)
WO (1) WO1999031157A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6936680B2 (en) * 2000-12-12 2005-08-30 Chang Chun Plastics Co., Ltd. Method of producing novolak resin
JP3694692B2 (ja) * 2003-12-11 2005-09-14 丸善石油化学株式会社 レジスト用ポリマー溶液およびその製造方法
KR20070108713A (ko) * 2006-05-08 2007-11-13 주식회사 동진쎄미켐 포토레지스트 조성물
US7642333B2 (en) * 2007-05-21 2010-01-05 Georgia-Pacific Chemicals Llc Anhydride and resorcinol latent catalyst system for improving cure characteristics of phenolic resins
WO2012026465A1 (ja) * 2010-08-27 2012-03-01 住友ベークライト株式会社 フォトレジスト用樹脂組成物
JP2013195497A (ja) 2012-03-16 2013-09-30 Sumitomo Bakelite Co Ltd フォトレジスト用樹脂組成物
JP6221316B2 (ja) * 2012-05-11 2017-11-01 住友ベークライト株式会社 フォトレジスト用樹脂組成物の製造方法、フォトレジストの製造方法および液晶デバイスの製造方法
TW201806996A (zh) * 2016-04-06 2018-03-01 迪愛生股份有限公司 酚醛清漆型樹脂及抗蝕劑材料

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2590342B2 (ja) * 1986-11-08 1997-03-12 住友化学工業株式会社 ポジ型フォトレジスト用ノボラック樹脂及びそれを含有するポジ型フォトレジスト組成物
CA2023791A1 (en) * 1989-08-24 1991-02-25 Ayako Ida Radiation-sensitive positive resist composition
JPH03253860A (ja) * 1990-03-05 1991-11-12 Fuji Photo Film Co Ltd ポジ型フオトレジスト組成物
US5750632A (en) * 1994-12-30 1998-05-12 Clariant Finance (Bvi) Limited Isolation of novolak resin by low temperature sub surface forced steam distillation
TW442710B (en) * 1995-12-07 2001-06-23 Clariant Finance Bvi Ltd Isolation of novolak resin without high temperature distillation and photoresist composition therefrom
US5910559A (en) * 1996-12-18 1999-06-08 Clariant Finance (Bvi) Limited Fractionated novolak resin from cresol-formaldehyde reaction mixture and photoresist composition therefrom
US5853954A (en) * 1996-12-18 1998-12-29 Clariant Finance (Bvi) Limited Fractionated novolak resin and photoresist composition therefrom

Also Published As

Publication number Publication date
TW448199B (en) 2001-08-01
MY114498A (en) 2002-10-31
CN1146604C (zh) 2004-04-21
EP1042381A1 (en) 2000-10-11
DE69835693D1 (de) 2006-10-05
US6045966A (en) 2000-04-04
EP1042381B1 (en) 2006-08-23
WO1999031157A1 (en) 1999-06-24
KR20010033157A (ko) 2001-04-25
JP2002508415A (ja) 2002-03-19
CN1304420A (zh) 2001-07-18

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