CN114600248B - 半导体元件和半导体元件的制造方法 - Google Patents

半导体元件和半导体元件的制造方法 Download PDF

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CN114600248B
CN114600248B CN202080074286.1A CN202080074286A CN114600248B CN 114600248 B CN114600248 B CN 114600248B CN 202080074286 A CN202080074286 A CN 202080074286A CN 114600248 B CN114600248 B CN 114600248B
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region
crystal plane
plane orientation
semiconductor layer
semiconductor element
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CN114600248A (zh
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村川贤太郎
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Kyocera Corp
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
CN202080074286.1A 2019-10-29 2020-10-29 半导体元件和半导体元件的制造方法 Active CN114600248B (zh)

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CN117769613A (zh) * 2021-07-21 2024-03-26 京瓷株式会社 模板基板和其制造方法以及制造装置、半导体基板和其制造方法以及制造装置、半导体器件、电子设备
TWI864562B (zh) * 2022-01-27 2024-12-01 日商京瓷股份有限公司 半導體基板之製造方法及製造裝置、以及控制裝置
WO2025164326A1 (ja) * 2024-01-31 2025-08-07 京セラ株式会社 光半導体素子、半導体基板、半導体基板の製造方法、光半導体素子の製造方法
WO2025182818A1 (ja) * 2024-02-29 2025-09-04 京セラ株式会社 半導体基板およびその製造方法、発光素子およびその製造方法、電子機器
WO2025216274A1 (ja) * 2024-04-10 2025-10-16 京セラ株式会社 半導体基板およびその製造方法

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JP4060511B2 (ja) * 2000-03-28 2008-03-12 パイオニア株式会社 窒化物半導体素子の分離方法
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