CN1144359C - 声表面波装置 - Google Patents

声表面波装置 Download PDF

Info

Publication number
CN1144359C
CN1144359C CNB981183417A CN98118341A CN1144359C CN 1144359 C CN1144359 C CN 1144359C CN B981183417 A CNB981183417 A CN B981183417A CN 98118341 A CN98118341 A CN 98118341A CN 1144359 C CN1144359 C CN 1144359C
Authority
CN
China
Prior art keywords
wave device
acoustic wave
welding electrode
electrode
surface acoustic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB981183417A
Other languages
English (en)
Other versions
CN1216415A (zh
Inventor
涩谷诚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Publication of CN1216415A publication Critical patent/CN1216415A/zh
Application granted granted Critical
Publication of CN1144359C publication Critical patent/CN1144359C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02992Details of bus bars, contact pads or other electrical connections for finger electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02984Protection measures against damaging
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05556Shape in side view
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/2919Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4807Shape of bonding interfaces, e.g. interlocking features
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4845Details of ball bonds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4845Details of ball bonds
    • H01L2224/48451Shape
    • H01L2224/48453Shape of the interface with the bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48599Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48699Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48799Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/922Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222Sequential connecting processes
    • H01L2224/92242Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01024Chromium [Cr]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1515Shape
    • H01L2924/15153Shape the die mounting substrate comprising a recess for hosting the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/15165Monolayer substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Die Bonding (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Wire Bonding (AREA)

Abstract

一种声表面波装置,该装置大致上消除了由粘合剂的固化收缩引起的应力,并大致上消除了在容纳声表面波元件的盒子中的应变,以防止声表面波装置特性的变化。另外,改进了在声表面波装置中的焊接引线的连接强度而具有更好的可靠性。声表面波装置的声表面波元件通过软粘合剂固定到盒子部件上,声表面波元件的焊接电极具有多个通孔。焊接引线的端点与具有通孔的焊接电极作引线焊接。

Description

声表面波装置
本发明涉及一种声表面波器件装置,诸如适合利用声表面波的声表面波谐振器或声表面波滤波器,本发明尤其涉及一种具有包括焊接引线(bonding wire)改善的电极结构的声表面波装置。
通常,在诸如适合利用声表面波的声表面波谐振器或声表面波滤波器之类的声表面波器件中,在盒子中提供一个声表面波元件。图10示出这么一种声表面波器件的一例。在声表面波器件51中,在盒子52中提供声表面波元件53。盒子52具有层叠的结构,其中将盒子部件52b和框形部件52c(都为矩形,并由绝缘陶瓷制成)以及盖子部件52d层叠在由诸如氧化铝之类的绝缘陶瓷制成的盒子部件52a上。盒子部件52a具有在其上表面上形成的一个凹入部分,而通过粘合材料54将声表面波元件53固定在凹入部分52d的底面上。粘合材料54为环氧合粘剂之类的材料,并在固化状态下具有高强度,以可靠地固定声表面波元件53。
将延伸到外侧面的外部电极55a和55b设置在盒子部件52a的上表面上。通过焊接引线56a和56b将外部电极55a和55b连接到声表面波元件53上的电极53a和53b。
在声表面波器件51中,用于将声表面波元件固定在盒子部件52a上的粘合材料在固化过程中收缩,从而具有减小的尺寸和覆盖区域。如由图11中的箭头所指出的,这种在固化过程中的收缩产生一应力,它沿张力的方向作用在盒子部件52a与声表面波元件53结合的表面上,这导致声表面波器件51的特性的改变。
还有,由于对盒子52施加了外力之类,可能在盒子52中引起应变。在这样的事件中,应变通过粘合材料54作用在声表面波元件53上。即,如果在盒子52中产生弯曲应变,则如图10中的箭头所指出的,拉应力和压应力作用在声表面波元件53的表面上。这样的拉应力或压应力可以引起声表面波器件51的特性的改变。
即,传统的声表面波器件51有一个问题:由粘合材料54的固化收缩或应力或盒子52中的应变引起的特性改变。不但在制造时会产生这样的应力,而且在使用声表面波器件51的过程中也会产生这样的应力。因此,在实际应用中声表面波器件的特性有可能发生改变。
另外,通过超声波焊接连接到声表面波元件53的电极53a和53b的焊接引线56a和56b的结合强度常常不足以在它们之间提供可靠的连接。因此,曾试图采用如图12所示的形成用Cr做电极层53c和用Au做电极53d的方法,以便能使电极可靠地连接到焊接引线56a,而焊丝56a连接的声表面波元件53的电极部分上,以及采用如图13中所示,增加焊接引线56a所连接到的电极部分的薄膜厚度的方法。但是每种方法都因为增加了电极形成步骤数目而提高了制造成本。
为了克服上述问题,本发明的较佳实施例提供了一种声表面波器件,其中由粘合剂的固化收缩或盒子中的应变引起的应力不会引起声表面波器件的特性变化。还有,本发明的较佳实施例提供了声表面波器件,其中增加了焊接引线的结合强度,而不增加制造步骤的数目,这种器件价格低,而可靠性更高。
本发明的较佳实施例提供了一种声表面波器件,该器件包括盒子、具有电极的声表面波元件以及连接到电极的焊接引线。通过软粘合材料将声表面波元件固定到盒子,并且电极在焊接引线所连接的区域形成有一个通孔。
声表面波元件最好有一个连接到电极的叉指电极,而且叉指换能器和电极最好是由相同的材料制成的,以便大致上具有相同的薄膜厚度。
根据本发明的较佳实施例,通过软粘合材料将声表面波元件固定到盒子部件。因此,在粘剂固化收缩时的应力较小,而且,即使当外力之类被施加给盒子部件,以产生应变时,由应变产生的应力被软合剂减小了,从而各种应力不会容易地被传递到声表面波元件。因此,提供了一种声表面波器件,该器件中基本上消除了由这种应力引起的特性的恶化,而且不容易发生器件特性的改变。
在声表面波元件较好地通过软粘合材料固定的同时,焊接引线所连接到的电极具有上述通孔。因此,当通过将焊接引线连接到相应的电极而进行焊接引线焊接时,可容易地使在通孔的边缘处的电极部分塑性地变形,以破坏电极表面上存在的氧化膜,从而焊接引线和电极之间的连接在氧化膜的这个破坏点开始。即,显著地改善焊接引线结合的可靠性。
另外,叉指电极以及焊接引线所连接的声表面波元件上的电极最好是由相同的材料做成的,以便具有大致上相同的厚度。因此,上述叉指电极以及焊接引线所连接的声表面波元件的电极可以由相同的工艺(例如光刻技术)形成。因此,除了形成叉指电极通常所需的步骤之外,不需执行额外的步骤,就可以容易地和可靠地形成具有通孔的焊接电极。即,可以容易而可靠地形成要与焊接引线接合的焊接电极,而不需使制造步骤复杂化。最好形成多个上述通孔,以允许更可靠和精确地将焊接引线与相应的电极接合。
为了描述本发明,在附图中示出几个较佳实施例和目前较好的式样,但应知道,本发明不限于所示出的明确的安排和手段。
图1A是表示本发明的第一较佳实施例的声表面波器件的截面图。
图1B是图1A中所示的声表面波器件主要部分的局部放大的示图。
图2是用于图1A中所示的声表面波器件中的表面声波元件的平面图。
图3A和3B是图2中所示的声表面波器件中焊接电极的放大的平面图和截面图。
图4是根据本发明另一个较佳实施例的声表面波器件的另一例的局部放大的平面图。
图5A和5B是示出从通孔边缘部分开始的焊接引线接合处理步骤的透视示意图。
图6是图1A中所示的声表面波器件的声表面波元件上的电极的一部分的局部放大的平面图。
图7A到7E是相应于沿图6的B-B线的部分的截面图,以及为得到图6中所示的电极结构而进行的处理步骤。
图8是图1中所示的声表面波器件的声表面波元件上的电极的局部放大的平面图。
图9A到9D是相应于沿图8的C-C线的部分的截面图,以及为得到图8中所示的电极结构而进行的处理步骤。
图10是传统的声表面波器件的一例的截面图。
图11是局部的截面图,用于解释在安装图10所示的声表面波器件时由粘剂的固化收缩引起的应力的方向。
图12是局部截面图,用于解释为改善使用焊接引线接合的可靠性的传统的接合结构。
图13是局部截面图,用于解释另一种为改善使用焊接引线接合的可靠性的传统的接合结构。
下面,参照附图详细地解释本发明的较佳实施例。
图1是根据本发明的第一较佳实施例的声表面波器件的截面图。声表面波器件1具有一结构,其中在盒子2中设置一声表面波元件3。盒子2具有层叠结构,其中,盒子部件5、框形部件6和盖子部件7层叠在盒子部件4上。凹入部分4b形成在盒子部件4的上表面4a中,最好是在其近似中心之处,并将声表面波元件3放在凹入部分4b内。最好通过粘合材料8将声表面波元件3固定到凹入部分4b的底面。
这个较佳实施例的一个特点是,当将粘合材料固化时粘合材料8是一种具有软性的相对较软的粘合材料,例如硅树脂粘合剂或变性的环氧树脂粘合剂。更具体地说,处于固化状态下的软粘合材料具有的肖氏硬度大约为80HSD或更小,这由JIS(日本工业标准)Z2246-1992规定。
声表面波元件3最好具有如下结构,如图2的平面图中所示,输入IDT电极9和输出IDT电极10位于声表面波基片3a的上表面上。每个IDT电极9和10最好都包括一对梳形电极,每个梳形电极至少有一个电极叉指,并且相互交错地排列,如图2中所示。
在本发明的较佳实施例中,声表面波元件3的IDT电极的结构和数量不限于包括如图2中所示的声表面波元件3的横向型声表面波滤波器的声表面波元件的IDT电极的结构和数量,而可以变更,以根据需要形成各种声表面波谐振器和声表面波滤波器。
焊接引线所连接的焊接电极9a和9b在形成IDT电极9的梳形电极的连续的处理中同时形成。还有,在元件3的IDT电极10一侧,焊接引线所连接的焊接电极10a和10b在与形成IDT10电极的梳形电极连续的处理中同时形成。
提供焊接电极9a、9b、10a和10b,以分别形成焊接引线所连接的部分。在这个较佳实施例中,焊接电极9a、9b、10a、10b最好由相同的材料制成,并且最好采用与形成IDT电极9和10的步骤相同的步骤,从而焊接电极9a、9b、10a、10b的薄膜厚度和IDT电极9和10的大致上相同。
这个较佳实施例的声表面波器件1的第二个特点是每个上述焊接电极9a、9b、10a和10b具有多个通孔11。例如,如图3A中所示,通孔11最好延伸穿过焊接电极9b至声表面波基片3a的上表面。这种相同的安排也用于形成在另外的焊接电极9a、10a和10b中。
图3A中所示的通孔11具有大致上为矩形的形状,虽然通孔11的形状可以是诸如三角形、五角形、圆形或其它的多角形的任何形状。如图4中所示,通孔11还可以是条状的,包括延长的大致上为矩形的结构。通孔11的尺寸也不限于某个具体长度或某一面积。但是,通孔11纵向和横向的长度d1和d2最好在大约0.2μm到大约20μm的范围中,而通孔11之间的距离d3最好在大约0.2μm到大约20μm的范围中。
回过来参照图1,在声表面波器件1中,外部电极12和13位于盒子部件4的上表面4a。安排外部电极12和13以从盒子部件4的上表面延伸到其侧面。可通过诸如电镀、溅射或者汽相淀积等适当的薄膜形成方法,通过施加和烘培导电膏、或通过其它适当的步骤,由施加导电材料形成外部电极12和13。
最好通过焊接引线14和15将外部电极12和13连接到声表面波元件3的焊接电极9a和9b。焊接引线14和15可以由一种适用于金属丝焊接引线的材料(例如Au、Al、Cu或具有这样的一种元素作为主要成分的合金)制成。在这个较佳实施例中,通过球焊的方式将由Au制成的焊接引线连接到焊接电极9a和9b。
或者可以使用不同于上述的球焊的焊接方法,例如楔焊方法。
盒子部件5最好采用适当的绝缘材料制成,例如诸如氧化铝之类的绝缘陶瓷或合成树脂,并且最好大致上为矩形的框形结构。最好由一种合适的材料例如金属形成的盖子部件7叠在框形部件6的上表面上。盖子部件7还可以由合成树脂或任何的其它材料制成。最好通过适当的粘合剂(例如,环氧粘合剂)将上述盒子部件4到6相互接合。
在这个较佳实施例的声表面波器件1中,通过软粘合材料8将声表面波元件3固定到盒子部件4。由于粘合剂8是柔软的,故在固化收缩时粘合材料8中产生的应力较小,从而施加至声表面波器件的应力显著降低。即使在盒子2的侧面产生应变,例如,如果受到一外力从而盒子部件4经受翘曲应变,但由于应力由粘合材料8吸收,故由盒子部件2的侧面上的应变引起的应力对声表面波元件3的影响显著减小。即,施加到声表面波元件3的应力被减小以限制声表面波器件1的特性变化。
如果本发明的较佳实施例只使用软粘合剂8固定声表面波元件3,则有发生通过焊丝焊接得到的接合强度减小的危险。但是,在这个较佳实施例中,焊接引线的接合强度可以增加,因为引出电极9a、9b、10a和10b具有多个通孔11。
即,在使用超声波振动的焊接引线焊接的步骤中,通过固相扩散使焊接引线和电极相互接合。为通过固相扩散达到接合,必需在焊接引线的和电极金属的干净表面之间达到接触。
但是,通常将基体金属(诸如Al)用于形成声表面波元件的IDT电极,并且这种金属典型地有形成在其上的氧化物薄膜。因此,为了形成用于接合步骤干净表面需要一个破坏电极表面上的氧化物膜的步骤。
另一方面,如果将软粘合材料用于声表面波元件的固定,则在焊丝焊接时所施加的超声能量由软粘合剂吸收。在使用超声波的焊丝焊接中,需要通过超声振动使焊丝和电极相对移动,从而使要接合的表面相互摩擦。金属的这种摩擦和相互运动引起摩擦,这使金属表面塑性地形变,由此氧化膜被破坏,以便暴露干净的表面。但是,如果用于固定器件的元件的粘合剂是柔软的,则器件与施加给焊接引线的振动发生同步,导致不能使接合表面足够强烈地互相摩擦。
相反,在这个较佳实施例中,上述焊接电极9a、9b、10a和10b具有多个通孔11。在焊接时,通孔11的边缘部分,即,通孔11和主电极表面之间的边缘可以容易地塑性地变形,以便破坏氧化物薄膜,由此暴露出干净的表面。氧化物薄膜的破坏和接合由此开始以达到接合。和基于使电极的平坦表面塑性变形的传统的焊接引线焊接相比,每个通孔边缘部分的电极薄膜具有如此的形状,使得有较低的机械强度,从而焊接引线可以穿入通孔中,以在其边缘部分中引起应力,从而由较小的振动能量就可以引起塑性形变。电极表面上的氧化物薄膜由此被破坏以暴露电极的干净表面。
图5A和5B概要地说明了接合,它是在通孔边缘部分开始的。图5A示出接合的初始状态。当焊接引线穿过通孔22a时,焊接引线21在电极22上摩擦。由此,机械强度较低的通孔22a的边缘22b处的电极部分容易形变,以便破坏电极表面上的氧化物薄膜。图5B示出了接合的后来的状态。该接合的特性是这样的,从而一旦通过破坏电极上的氧化物薄膜而导致暴露出干净的表面时,从这一点开始破坏氧化表面。因此,氧化薄膜的破坏和接合沿超声波振幅方向进行,从通孔边缘部分22b开始。
在这个较佳实施例中,上述焊接引线9a到10b最好由相同的材料形成,而且最好通过与形成IDT电极9和10的相同的步骤形成。因此,不需另外的步骤就可以容易而可靠地使焊接引线与焊接电极接合,这将参照图6和7A到7E解释。
图6是形成上述电极9a和IDT电极9相焊接的那部分的放大平面图。图7A到7E是形成IDT电极9和焊接电极9a的步骤的截面图。图7A到7E相应于沿图6的线B-B的截面。
如图7A中所示,导电薄膜15最好设置在声表面波基片3a的整个上表面上。导电薄膜15最好通过一种薄膜形成方法(诸如汽相淀积或电镀)将A1放置在基片3a的整个上表面而形成。接着,将光致抗蚀剂16施加至导电薄膜15的整个的上表面(图7B)。
此后,将掩模置于光致抗蚀剂16的上表面上,并执行暴光步骤,以留下将形成IDT电极9的部分、将形成焊接电极9a的部分和相应于将形成通孔的区域之外的部分。光致抗蚀剂16的其它部分(即,除去相应于电极和将形成通孔11的部分之外的部分)通过暴光和显影而被移走。通过如上所述的步骤,会在最终形成通孔的部分形成通孔16a、16b和16c形成和除去相应于将形成IDT电极9和焊接电极9a的部分之外的部分。参照图7c,通孔16a相应于IDT电极9的区域以外的区域,而通孔16b和16c相应于通孔11将最终形成的部分。
接着,通过使用蚀刻剂执行蚀刻,这种蚀刻剂可以蚀刻导电薄膜15,但不会腐蚀光致抗蚀剂16。由此移去通孔16a到16c下面的导电薄膜部分以形成IDT电极9和焊接电极9a,并且在焊接电极9a中形成通孔11,如图7D所示。
最后,如图7E中所示,把光致抗蚀剂16移走,以得到图6中所示的电极结构。
参照附图6和7A到7E,从上面对制造方法的描述可以看出,具有多个通孔11的焊接电极9a在形成IDT电极9的步骤中可以同时形成,因此,无需增加步骤的数目,就可以容易地得到使用焊接引线产生的连接,并可以容易地形成具有改善的连接可靠性的焊接电极9a到10b。
由于在上述的方法中,焊接电极9a是通过与形成IDT电极9的相同的步骤及使用与其相同的材料形成的,故焊接电极9a最好具有和IDT电极9相同的薄膜厚度。换句话说,如果焊接电极9a用和IDT电极9的相同的材料制成,以便具有和IDT电极9大致上相同的薄膜厚度,则如图6和7A到7E中所示,焊接电极9a和IDT电极9可以通过相同的步骤形成。
图8和9A到9D是用于解释形成IDT电极9和焊接电极9a的方法的另一例的图。图8是设置了IDT电极9和焊接电极9a的部分的平面图。相应于沿图8的线C-C,图9A到9D是局部分切开的截面图,示出形成电极的步骤。
如图9A所示,在这种方法中,给声表面波基片3a的整个上表面提供光致抗蚀剂17。接着,对于光致抗蚀剂17光和显影,只留下这些区域中的光致抗蚀剂部分17A到17C,当移走相应于其它区域的剩余的光致抗蚀剂时,无IDT电极9和焊接电极9a部分将位于这些区域中。光致抗蚀剂部分17A位于这样的区域,当光致抗蚀剂部分17B和17C位于通孔11将形成的地方时,无IDT电极9和焊接电极9a会在该区域中进行。
接着,如图9C中所示,在基片3a的整个表面上形成由Al制成的导电薄膜18。在这种情况下,导电薄膜18形成在声表面波基片3a的上表面上和剩余的光致抗蚀剂部分17A到17C的上表面上。
去除光致抗蚀剂部分17A到17C。它们具有形成在其上表面上的导电薄膜。图7所示的电极结构由此形成在声表面波基片3a上,如图9D中所示。
参照图8和9A到9D,在上述方法中,IDT电极9和焊接电极9a也可以用相同的材料及相同的步骤形成,从而不必增加步骤的数目,就可容易而可靠地形成焊接电极,该焊接电极具有更好的能力以可靠而容易地和焊接引线连接。
虽然在图1中所示的声表面波器件1中,盒子2通过将盒子部件4到以及盖子部件7相互的叠起而形成,但形成盒子2的材料和盒子的结构不限于图1所描述的盒2的材料和结构。例如,可以使用将金属罩子接合到绝缘基片上而形成的盒子。
虽然已经揭示了本发明的较佳实施例,但可以有在下面的权利要求的范围中的实行这里所揭示的原理的各种模式。因此,应该知道,本发明的范围只由所附的权利要求限制。

Claims (11)

1.一种声表面波装置,包括:
盒子;
设置在所述盒子中并且至少有一个焊接电极的声表面波元件;及
至少一根连接到所述至少一个焊接电极的焊接引线;
具有软性的软粘合材料,其特征在于
所述至少一个焊接电极具有至少一个通孔,所述通孔在所述至少一根焊接引线连接到所述至少一个焊接电极之处延伸穿过所述焊接电极
所述声表面波元件通过所述粘合材料固定到所述盒子,所述粘合材料是硅酮粘合材料和变性环氧粘合材料中的一种。
2.如权利要求1所述的声表面波装置,其特征在于所述粘合材料固化时的肖氏硬度为大约80HDS或更小。
3.如权利要求1所述的声表面波装置,其特征在于所述声表面波元件具有连接到所述至少一个焊接电极的叉指电极,所述叉指电极和所述至少一个焊接电极由相同的材料制成,并具有大致上相同的薄膜厚度。
4.如权利要求1所述的声表面波装置,其特征在于所述至少一个焊接电极具有多个延伸穿过所述焊接电极的通孔。
5.如权利要求4所述的声表面波装置,其特征在于所述多个通孔的形状为大致的矩形、大致的圆形、大致的细带形和大致的三角形中的一种。
6.如权利要求1所述的声表面波装置,其特征在于所述至少一个焊接电极具有多个延伸穿过所述焊接电极的通孔,并且所述至少一根焊接引线在所述多个通孔所设置的区域处连接到所述至少一个焊接电极。
7.一种声表面波装置,其特征在于包括:
具有声表面波基片、叉指换能器和至少一个连接到所述叉指换能器的焊接电极的声表面波元件,所述叉指换能器和所述至少一个焊接电极设置在所述声表面波基片上;
具有用于容纳所述声表面波元件的凹入部分的盒子,所述盒子具有外部电极;
设置在所述盒子的所述凹入部分底部和所述声表面波元件的所述声表面波基片之间的固化的粘合材料,从而所述声表面波元件通过所述固化的粘合材料固定在所述盒子的所述凹入部分中,所述固化的粘合材料是硅酮粘合材料和变性环氧粘合材料中的一种;及
连接在所述外部电极和所述声表面波元件的所述至少一个焊接电极之间的至少一根焊接引线
所述至少一个焊接电极在所述至少一根焊接引线连接到所述至少一个焊接电极之处具有至少一个延伸穿过所述焊接电极的通孔。
8.如权利要求7所述的声表面波装置,其特征在于所述固化的粘合材料的肖氏硬度为大约80HDS或更小。
9.如权利要求7所述的声表面波装置,其特征在于所述至少一个焊接电极具有多个延伸穿过所述焊接电极的通孔,并且至少一根焊接引线在设置所述多个通孔之处连接到所述至少一个焊接电极。
10.如权利要求9所述的声表面波装置,其特征在于所述多个通孔的形状是大致的矩形、大致的圆形、大致的细长的条形和大致的三角形中的一种。
11.如权利要求7所述的声表面波装置,其特征在于所述叉指换能器和所述至少一个焊接电极由相同的材料制成,并具有大致上相同的厚度。
CNB981183417A 1997-08-11 1998-08-11 声表面波装置 Expired - Fee Related CN1144359C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9216494A JPH1168504A (ja) 1997-08-11 1997-08-11 表面波装置
JP216494/1997 1997-08-11
JP216494/97 1997-08-11

Publications (2)

Publication Number Publication Date
CN1216415A CN1216415A (zh) 1999-05-12
CN1144359C true CN1144359C (zh) 2004-03-31

Family

ID=16689320

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB981183417A Expired - Fee Related CN1144359C (zh) 1997-08-11 1998-08-11 声表面波装置

Country Status (4)

Country Link
US (1) US6087756A (zh)
EP (1) EP0897215A3 (zh)
JP (1) JPH1168504A (zh)
CN (1) CN1144359C (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000307373A (ja) * 1999-02-18 2000-11-02 Murata Mfg Co Ltd 表面波装置及びその製造方法
JP3428488B2 (ja) * 1999-04-12 2003-07-22 株式会社村田製作所 電子部品の製造方法
US6297562B1 (en) * 1999-09-20 2001-10-02 Telefonaktieboalget Lm Ericsson (Publ) Semiconductive chip having a bond pad located on an active device
JP2001267355A (ja) * 2000-03-17 2001-09-28 Murata Mfg Co Ltd ワイヤボンディング方法およびこのワイヤボンディング方法を用いた弾性表面波装置
JP3764450B2 (ja) * 2003-07-28 2006-04-05 Tdk株式会社 表面弾性波素子、表面弾性波装置、表面弾性波デュプレクサ、及び表面弾性波素子の製造方法
JP5036840B2 (ja) * 2010-03-25 2012-09-26 株式会社東芝 発光素子
CN106489239B (zh) * 2014-07-07 2020-03-03 天工滤波方案日本有限公司 声波器件、以及使用该声波器件的天线双工器、模块和通信装置
CN112564661A (zh) * 2020-12-03 2021-03-26 广东广纳芯科技有限公司 改善声表面波滤波器膜层界面结合强度的方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2108800B (en) * 1981-10-14 1985-03-20 Gen Electric Co Plc Surface acoustic wave devices
JPS59232432A (ja) * 1983-06-15 1984-12-27 Fujitsu Ltd 混成集積回路の製造方法
JPS6119136A (ja) * 1984-07-05 1986-01-28 Toshiba Corp 半導体装置のワイヤボンデイング方法およびこれに用いるボンデイングパツド
JPS61172362A (ja) * 1985-01-28 1986-08-04 Seiko Epson Corp ボンデイング電極構造
JPS62174934A (ja) * 1986-01-28 1987-07-31 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPS63161634A (ja) * 1986-12-24 1988-07-05 Nec Corp 半導体集積回路装置
US4999535A (en) * 1989-09-25 1991-03-12 The United States Of America As Represented By The Secretary Of The Army Saw transducer with improved bus-bar design
JPH0637135A (ja) * 1992-07-20 1994-02-10 Murata Mfg Co Ltd 半導体装置
US5686762A (en) * 1995-12-21 1997-11-11 Micron Technology, Inc. Semiconductor device with improved bond pads

Also Published As

Publication number Publication date
US6087756A (en) 2000-07-11
CN1216415A (zh) 1999-05-12
EP0897215A2 (en) 1999-02-17
EP0897215A3 (en) 2000-08-09
JPH1168504A (ja) 1999-03-09

Similar Documents

Publication Publication Date Title
CN1276576C (zh) 压电器件
KR100680511B1 (ko) 압전 디바이스
CN1223085C (zh) 声表面波装置
CN1144359C (zh) 声表面波装置
CN1943111A (zh) 弹性表面波装置
CN1167192C (zh) 声表面波器件制造方法
CN1490870A (zh) 引线框及其制造方法,以及用该引线框制造的半导体器件
CN1495999A (zh) 声波器件及其制作方法
CN1518213A (zh) 表面声波器件及其制造方法
CN1264219A (zh) 表面声波装置及其制造方法
CN1933327A (zh) 表面声波器件及其制造方法
CN1579015A (zh) 模块部件
CN1452792A (zh) 用于测量装置的压电陶瓷多层元件及其制造方法
WO2001022580A1 (fr) Dispositif a ondes acoustiques de surface et son procede de fabrication
CN1890789A (zh) 封装元件的工艺和封装的元件
CN1157850C (zh) 压电谐振器
CN1111854A (zh) 电子零件装置及其制造方法
CN1173048A (zh) 压电元件
CN1131590C (zh) 声表面波器件
CN1220777A (zh) 半导体装置及其制造方法
JP2002345094A (ja) 超音波探触子用バッキング及びその製造方法
JP3706573B2 (ja) 半導体パッケージ及び半導体パッケージの製造方法
CN1574619A (zh) 能阱型压电谐振部件
JP2007027211A (ja) 電子部品及びその製造方法
CN1162966C (zh) 压电谐振器

Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C14 Grant of patent or utility model
GR01 Patent grant
C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee