CN114423889B - SiC单晶的制造方法、SiC单晶的制造装置以及SiC单晶晶片 - Google Patents

SiC单晶的制造方法、SiC单晶的制造装置以及SiC单晶晶片 Download PDF

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CN114423889B
CN114423889B CN202080065931.3A CN202080065931A CN114423889B CN 114423889 B CN114423889 B CN 114423889B CN 202080065931 A CN202080065931 A CN 202080065931A CN 114423889 B CN114423889 B CN 114423889B
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single crystal
sic single
sic
crystal body
raw material
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CN114423889A (zh
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金子忠昭
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Toyota Tsusho Corp
Kwansei Gakuin Educational Foundation
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Toyota Tsusho Corp
Kwansei Gakuin Educational Foundation
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/063—Heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/12—Etching in gas atmosphere or plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN202080065931.3A 2019-09-27 2020-09-24 SiC单晶的制造方法、SiC单晶的制造装置以及SiC单晶晶片 Active CN114423889B (zh)

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JP2019-178069 2019-09-27
JP2019178069 2019-09-27
PCT/JP2020/036003 WO2021060368A1 (ja) 2019-09-27 2020-09-24 ＳｉＣ単結晶の製造方法、ＳｉＣ単結晶の製造装置及びＳｉＣ単結晶ウェハ

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US (1) US11932967B2 (https=)
EP (1) EP4036281A4 (https=)
JP (1) JP7733281B2 (https=)
CN (1) CN114423889B (https=)
TW (1) TW202120758A (https=)
WO (1) WO2021060368A1 (https=)

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Publication number Priority date Publication date Assignee Title
JP7494768B2 (ja) * 2021-03-16 2024-06-04 信越半導体株式会社 炭化珪素単結晶ウェーハの結晶欠陥評価方法
JP7339434B1 (ja) * 2021-10-20 2023-09-05 日本碍子株式会社 ＳｉＣ単結晶基板及びその製造方法
CN117535788B (zh) * 2024-01-10 2024-04-05 乾晶半导体(衢州)有限公司 一种单晶生长方法

Citations (5)

* Cited by examiner, † Cited by third party
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JPH1187257A (ja) * 1997-09-11 1999-03-30 Fuji Electric Co Ltd 炭化けい素基板の熱処理方法
JP2016050141A (ja) * 2014-08-29 2016-04-11 新日鐵住金株式会社 炭化珪素単結晶の焼鈍方法
WO2018174105A1 (ja) * 2017-03-22 2018-09-27 東洋炭素株式会社 改質ＳｉＣウエハの製造方法、エピタキシャル層付きＳｉＣウエハ、その製造方法、及び表面処理方法
JP2018158858A (ja) * 2017-03-22 2018-10-11 日本電信電話株式会社 結晶成長方法および装置
CN109072478A (zh) * 2016-04-28 2018-12-21 学校法人关西学院 气相外延生长方法及带有外延层的基板的制备方法

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JP5014737B2 (ja) 2006-09-21 2012-08-29 新日本製鐵株式会社 ＳｉＣ単結晶基板の製造方法
CN102543718A (zh) * 2010-12-14 2012-07-04 北京天科合达蓝光半导体有限公司 一种降低碳化硅晶片翘曲度、弯曲度的方法
JP6080075B2 (ja) 2013-06-13 2017-02-15 学校法人関西学院 ＳｉＣ基板の表面処理方法
JP5944873B2 (ja) * 2013-09-20 2016-07-05 新日鉄住金マテリアルズ株式会社 炭化珪素単結晶ウェハの内部応力評価方法、及び炭化珪素単結晶ウェハの反りの予測方法
JP6232329B2 (ja) * 2014-03-31 2017-11-15 東洋炭素株式会社 ＳｉＣ種結晶の加工変質層の除去方法、ＳｉＣ種結晶及びＳｉＣ基板の製造方法
US10202706B2 (en) * 2014-09-30 2019-02-12 Showa Denko K.K. Silicon carbide single crystal wafer and method of manufacturing a silicon carbide single crystal ingot
US20170137962A1 (en) * 2015-11-16 2017-05-18 National Chung-Shan Institute Of Science And Technology Fabrication Method for Growing Single Crystal of Multi-Type Compound
CN106968018B (zh) * 2017-04-10 2019-02-05 山东大学 一种锗氮共掺的碳化硅单晶材料的生长方法
JP7085833B2 (ja) * 2017-12-25 2022-06-17 昭和電工株式会社 炭化珪素単結晶の製造方法
JP7436950B2 (ja) * 2019-09-20 2024-02-22 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1187257A (ja) * 1997-09-11 1999-03-30 Fuji Electric Co Ltd 炭化けい素基板の熱処理方法
JP2016050141A (ja) * 2014-08-29 2016-04-11 新日鐵住金株式会社 炭化珪素単結晶の焼鈍方法
CN109072478A (zh) * 2016-04-28 2018-12-21 学校法人关西学院 气相外延生长方法及带有外延层的基板的制备方法
WO2018174105A1 (ja) * 2017-03-22 2018-09-27 東洋炭素株式会社 改質ＳｉＣウエハの製造方法、エピタキシャル層付きＳｉＣウエハ、その製造方法、及び表面処理方法
JP2018158858A (ja) * 2017-03-22 2018-10-11 日本電信電話株式会社 結晶成長方法および装置

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Publication number Publication date
CN114423889A (zh) 2022-04-29
EP4036281A1 (en) 2022-08-03
US20230024750A1 (en) 2023-01-26
EP4036281A4 (en) 2023-08-02
JP7733281B2 (ja) 2025-09-03
TW202120758A (zh) 2021-06-01
US11932967B2 (en) 2024-03-19
JPWO2021060368A1 (https=) 2021-04-01
WO2021060368A1 (ja) 2021-04-01

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