JP7733281B2 - ＳｉＣ単結晶の製造方法、ＳｉＣ単結晶の製造装置及びＳｉＣ単結晶ウェハ - Google Patents

ＳｉＣ単結晶の製造方法、ＳｉＣ単結晶の製造装置及びＳｉＣ単結晶ウェハ

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Publication number
JP7733281B2
JP7733281B2 JP2021548982A JP2021548982A JP7733281B2 JP 7733281 B2 JP7733281 B2 JP 7733281B2 JP 2021548982 A JP2021548982 A JP 2021548982A JP 2021548982 A JP2021548982 A JP 2021548982A JP 7733281 B2 JP7733281 B2 JP 7733281B2
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single crystal
sic single
sic
crystal body
producing
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JPWO2021060368A1 (https=
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忠昭 金子
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Toyota Tsusho Corp
Kwansei Gakuin Educational Foundation
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Toyota Tsusho Corp
Kwansei Gakuin Educational Foundation
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/063—Heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/12—Etching in gas atmosphere or plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2021548982A 2019-09-27 2020-09-24 ＳｉＣ単結晶の製造方法、ＳｉＣ単結晶の製造装置及びＳｉＣ単結晶ウェハ Active JP7733281B2 (ja)

Applications Claiming Priority (3)

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JP2019178069 2019-09-27
JP2019178069 2019-09-27
PCT/JP2020/036003 WO2021060368A1 (ja) 2019-09-27 2020-09-24 ＳｉＣ単結晶の製造方法、ＳｉＣ単結晶の製造装置及びＳｉＣ単結晶ウェハ

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JP7733281B2 true JP7733281B2 (ja) 2025-09-03

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US (1) US11932967B2 (https=)
EP (1) EP4036281A4 (https=)
JP (1) JP7733281B2 (https=)
CN (1) CN114423889B (https=)
TW (1) TW202120758A (https=)
WO (1) WO2021060368A1 (https=)

Families Citing this family (3)

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Publication number Priority date Publication date Assignee Title
JP7494768B2 (ja) * 2021-03-16 2024-06-04 信越半導体株式会社 炭化珪素単結晶ウェーハの結晶欠陥評価方法
JP7339434B1 (ja) * 2021-10-20 2023-09-05 日本碍子株式会社 ＳｉＣ単結晶基板及びその製造方法
CN117535788B (zh) * 2024-01-10 2024-04-05 乾晶半导体(衢州)有限公司 一种单晶生长方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014199615A1 (ja) 2013-06-13 2014-12-18 学校法人関西学院 ＳｉＣ基板の表面処理方法
WO2017188381A1 (ja) 2016-04-28 2017-11-02 学校法人関西学院 気相エピタキシャル成長方法及びエピタキシャル層付き基板の製造方法
WO2018174105A1 (ja) 2017-03-22 2018-09-27 東洋炭素株式会社 改質ＳｉＣウエハの製造方法、エピタキシャル層付きＳｉＣウエハ、その製造方法、及び表面処理方法

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Publication number Priority date Publication date Assignee Title
JP3550967B2 (ja) 1997-09-11 2004-08-04 富士電機ホールディングス株式会社 炭化けい素基板の熱処理方法
JP5014737B2 (ja) 2006-09-21 2012-08-29 新日本製鐵株式会社 ＳｉＣ単結晶基板の製造方法
CN102543718A (zh) * 2010-12-14 2012-07-04 北京天科合达蓝光半导体有限公司 一种降低碳化硅晶片翘曲度、弯曲度的方法
JP5944873B2 (ja) * 2013-09-20 2016-07-05 新日鉄住金マテリアルズ株式会社 炭化珪素単結晶ウェハの内部応力評価方法、及び炭化珪素単結晶ウェハの反りの予測方法
JP6232329B2 (ja) * 2014-03-31 2017-11-15 東洋炭素株式会社 ＳｉＣ種結晶の加工変質層の除去方法、ＳｉＣ種結晶及びＳｉＣ基板の製造方法
JP6335722B2 (ja) 2014-08-29 2018-05-30 昭和電工株式会社 炭化珪素単結晶の焼鈍方法
US10202706B2 (en) * 2014-09-30 2019-02-12 Showa Denko K.K. Silicon carbide single crystal wafer and method of manufacturing a silicon carbide single crystal ingot
US20170137962A1 (en) * 2015-11-16 2017-05-18 National Chung-Shan Institute Of Science And Technology Fabrication Method for Growing Single Crystal of Multi-Type Compound
JP2018158858A (ja) * 2017-03-22 2018-10-11 日本電信電話株式会社 結晶成長方法および装置
CN106968018B (zh) * 2017-04-10 2019-02-05 山东大学 一种锗氮共掺的碳化硅单晶材料的生长方法
JP7085833B2 (ja) * 2017-12-25 2022-06-17 昭和電工株式会社 炭化珪素単結晶の製造方法
JP7436950B2 (ja) * 2019-09-20 2024-02-22 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法

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* Cited by examiner, † Cited by third party
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WO2014199615A1 (ja) 2013-06-13 2014-12-18 学校法人関西学院 ＳｉＣ基板の表面処理方法
WO2017188381A1 (ja) 2016-04-28 2017-11-02 学校法人関西学院 気相エピタキシャル成長方法及びエピタキシャル層付き基板の製造方法
WO2018174105A1 (ja) 2017-03-22 2018-09-27 東洋炭素株式会社 改質ＳｉＣウエハの製造方法、エピタキシャル層付きＳｉＣウエハ、その製造方法、及び表面処理方法

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Publication number Publication date
CN114423889A (zh) 2022-04-29
EP4036281A1 (en) 2022-08-03
US20230024750A1 (en) 2023-01-26
EP4036281A4 (en) 2023-08-02
TW202120758A (zh) 2021-06-01
US11932967B2 (en) 2024-03-19
JPWO2021060368A1 (https=) 2021-04-01
WO2021060368A1 (ja) 2021-04-01
CN114423889B (zh) 2024-07-09

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