CN114258482A - 检查装置的自我诊断方法和检查装置 - Google Patents

检查装置的自我诊断方法和检查装置 Download PDF

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Publication number
CN114258482A
CN114258482A CN202080059026.7A CN202080059026A CN114258482A CN 114258482 A CN114258482 A CN 114258482A CN 202080059026 A CN202080059026 A CN 202080059026A CN 114258482 A CN114258482 A CN 114258482A
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CN
China
Prior art keywords
light
unit
substrate
imaging
inspection apparatus
Prior art date
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Pending
Application number
CN202080059026.7A
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English (en)
Chinese (zh)
Inventor
大塚庆崇
鹤田茂登
三村勇之
前田浩史
真锅英二
日诘久则
篠塚真一
田上裕宪
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN114258482A publication Critical patent/CN114258482A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/93—Detection standards; Calibrating baseline adjustment, drift correction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/0228—Control of working procedures; Failure detection; Spectral bandwidth calculation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01—Arrangements or apparatus for facilitating the optical investigation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/10—Scanning
    • G01N2201/104—Mechano-optical scan, i.e. object and beam moving
    • G01N2201/1047—Mechano-optical scan, i.e. object and beam moving with rotating optics and moving stage
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/12—Circuits of general importance; Signal processing
    • G01N2201/127—Calibration; base line adjustment; drift compensation

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN202080059026.7A 2019-08-29 2020-08-17 检查装置的自我诊断方法和检查装置 Pending CN114258482A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019-157271 2019-08-29
JP2019157271 2019-08-29
PCT/JP2020/030934 WO2021039450A1 (ja) 2019-08-29 2020-08-17 検査装置の自己診断方法および検査装置

Publications (1)

Publication Number Publication Date
CN114258482A true CN114258482A (zh) 2022-03-29

Family

ID=74684762

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080059026.7A Pending CN114258482A (zh) 2019-08-29 2020-08-17 检查装置的自我诊断方法和检查装置

Country Status (4)

Country Link
JP (1) JP7297074B2 (ja)
KR (1) KR20220051389A (ja)
CN (1) CN114258482A (ja)
WO (1) WO2021039450A1 (ja)

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63122903A (ja) * 1986-11-12 1988-05-26 Sekisui Jushi Co Ltd 測長装置
JPS63122908A (ja) * 1986-11-13 1988-05-26 Toshiba Corp 表面検査装置
JP3158969B2 (ja) * 1995-06-09 2001-04-23 東レ株式会社 フイルムの欠点検出装置およびフイルムの製造方法
JP2001074669A (ja) * 1999-09-07 2001-03-23 Nippon Columbia Co Ltd 光ディスク欠陥検査装置
US7095496B2 (en) * 2001-12-12 2006-08-22 Tokyo Electron Limited Method and apparatus for position-dependent optical metrology calibration
JP2004191324A (ja) * 2002-12-13 2004-07-08 Ricoh Co Ltd ピンホール検査装置
JP2010008336A (ja) * 2008-06-30 2010-01-14 Shin Etsu Handotai Co Ltd 画像検査装置の校正用サンプルウエーハ及び画像検査装置の校正方法
KR20110055788A (ko) * 2009-11-20 2011-05-26 재단법인 서울테크노파크 레이저를 이용한 접합웨이퍼 검사방법
JP5421825B2 (ja) 2010-03-09 2014-02-19 東京エレクトロン株式会社 接合システム、接合方法、プログラム及びコンピュータ記憶媒体
JP6004517B2 (ja) * 2011-04-19 2016-10-12 芝浦メカトロニクス株式会社 基板検査装置、基板検査方法及び該基板検査装置の調整方法
KR101264099B1 (ko) * 2011-07-07 2013-05-14 한국전기연구원 다중 접합 반도체의 공극 검사 장치 및 방법
JP5674731B2 (ja) * 2012-08-23 2015-02-25 東京エレクトロン株式会社 検査装置、接合システム、検査方法、プログラム及びコンピュータ記憶媒体
JP6848929B2 (ja) * 2018-04-17 2021-03-24 豊田合成株式会社 収納ボックス
JP7065949B2 (ja) * 2018-04-23 2022-05-12 東京エレクトロン株式会社 測定方法および測定装置
US10215695B1 (en) * 2018-04-25 2019-02-26 Globalfoundries Inc. Inspection system and method for detecting defects at a materials interface

Also Published As

Publication number Publication date
KR20220051389A (ko) 2022-04-26
JP7297074B2 (ja) 2023-06-23
WO2021039450A1 (ja) 2021-03-04
JPWO2021039450A1 (ja) 2021-03-04

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