CN114258482A - Self-diagnosis method for inspection apparatus and inspection apparatus - Google Patents

Self-diagnosis method for inspection apparatus and inspection apparatus Download PDF

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Publication number
CN114258482A
CN114258482A CN202080059026.7A CN202080059026A CN114258482A CN 114258482 A CN114258482 A CN 114258482A CN 202080059026 A CN202080059026 A CN 202080059026A CN 114258482 A CN114258482 A CN 114258482A
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China
Prior art keywords
light
unit
substrate
imaging
inspection apparatus
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CN202080059026.7A
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Chinese (zh)
Inventor
大塚庆崇
鹤田茂登
三村勇之
前田浩史
真锅英二
日诘久则
篠塚真一
田上裕宪
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/93—Detection standards; Calibrating baseline adjustment, drift correction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/0228—Control of working procedures; Failure detection; Spectral bandwidth calculation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01—Arrangements or apparatus for facilitating the optical investigation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/10—Scanning
    • G01N2201/104—Mechano-optical scan, i.e. object and beam moving
    • G01N2201/1047—Mechano-optical scan, i.e. object and beam moving with rotating optics and moving stage
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/12—Circuits of general importance; Signal processing
    • G01N2201/127—Calibration; base line adjustment; drift compensation

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The self-diagnosis method of the inspection device (80) comprises a step of performing arrangement, a step of performing irradiation, a step of receiving light, and a step of determining abnormality of light quantity. The arrangement step is to move a holding unit (400) of a diagnostic unit (700) which holds the outer periphery of the stacked substrate (T) and is provided with an attenuation member (720) for attenuating light, thereby arranging the attenuation member between illumination units (610, 620) for irradiating light to the stacked substrate and imaging units (51, 520) for imaging the stacked substrate. The step of irradiating is to irradiate light with a set light amount from the illumination unit after the step of arranging. The step of receiving light is performed after the step of irradiating light, and the step of receiving light irradiated from the illumination unit and transmitted through the attenuation member uses the imaging unit. The step of determining the abnormality in the light quantity determines the abnormality in the light quantity of the light emitted from the illumination unit based on the light receiving quantity of the light received by the imaging unit after the step of receiving the light.

Description

Self-diagnosis method for inspection apparatus and inspection apparatus
Technical Field
The present disclosure relates to a self-diagnosis method of an inspection apparatus and an inspection apparatus.
Background
A bonding system including a bonding apparatus for forming a stacked substrate by bonding substrates such as semiconductor wafers to each other and an inspection apparatus for inspecting the stacked substrate formed by the bonding apparatus is known (see patent document 1).
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2011-187716
Disclosure of Invention
Problems to be solved by the invention
The present disclosure provides a technique capable of easily maintaining the measurement accuracy of an inspection apparatus.
Means for solving the problems
A self-diagnosis method of an inspection apparatus according to an aspect of the present disclosure is a self-diagnosis method of an inspection apparatus for inspecting a stacked substrate in which a first substrate and a second substrate are bonded to each other, the self-diagnosis method including a step of performing arrangement, a step of performing irradiation, a step of receiving light, and a step of determining an abnormality in light quantity. The step of arranging is performed by moving a holding portion, which holds an outer peripheral portion of the stacked substrate and is provided with a diagnostic portion having an attenuation member for attenuating light, to arrange the attenuation member between an illumination portion, which is arranged above and below the holding portion and irradiates the stacked substrate held by the holding portion with light, and an imaging portion, which is arranged above and below the holding portion at a position facing the illumination portion and images the stacked substrate held by the holding portion. The step of irradiating irradiates light with a set light amount from the illumination section after the step of disposing. The step of receiving light is performed after the step of irradiating light, and the step of receiving light irradiated from the illumination unit and transmitted through the attenuation member is performed using the imaging unit. The step of determining the abnormality in the light quantity determines the abnormality in the light quantity of the light emitted from the illumination unit based on the light receiving quantity of the light received by the imaging unit after the step of receiving the light.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present disclosure, the measurement accuracy of the inspection apparatus can be easily maintained.
Drawings
Fig. 1 is a schematic diagram showing a configuration of a joining system according to an embodiment.
Fig. 2 is a schematic view showing a state before the first substrate and the second substrate are bonded according to the embodiment.
Fig. 3 is a schematic diagram showing a structure of a bonding apparatus according to an embodiment.
Fig. 4 is a schematic diagram showing a configuration of an inspection apparatus according to an embodiment.
Fig. 5 is a schematic diagram showing a configuration of a holding unit of the inspection apparatus according to the embodiment.
Fig. 6 is a diagram showing an example of an imaging method for measuring a marker.
FIG. 7 is a diagram showing an example of a measurement marker.
Fig. 8 is a diagram showing the structure of the damping member according to the embodiment.
Fig. 9 is a diagram showing an example of the calibration marks formed on the damping member.
Fig. 10 is a block diagram showing a configuration of a control device according to the embodiment.
Fig. 11 is a flowchart showing an example of a process before forming a stacked substrate by the bonding apparatus among the processes performed by the bonding system.
Fig. 12 is a flowchart showing an example of the procedure of the light amount inspection processing.
Fig. 13 is a flowchart showing an example of the procedure of the optical axis inspection processing.
Detailed Description
Hereinafter, a mode (hereinafter, referred to as "embodiment") for implementing the self-diagnosis method of the inspection apparatus and the inspection apparatus of the present disclosure will be described in detail with reference to the drawings. The self-diagnosis method and the inspection apparatus of the present disclosure are not limited to the embodiments. In addition, the embodiments can be appropriately combined in a range in which the processing contents are not contradictory. In the following embodiments, the same portions are denoted by the same reference numerals, and redundant description thereof is omitted.
In the embodiments described below, expressions such as "fixed", "orthogonal", "perpendicular", or "parallel" are sometimes used, but these expressions need not be strictly "fixed", "orthogonal", "perpendicular", or "parallel". In other words, the above expressions are, for example, variations in allowable manufacturing accuracy, installation accuracy, and the like.
In addition, in each of the drawings referred to below, an orthogonal coordinate system may be shown in which an X-axis direction, a Y-axis direction, and a Z-axis direction are defined to be orthogonal to each other and a positive Z-axis direction is set to be a vertical upward direction for easy understanding of the description. The rotation direction about the vertical axis as the rotation center may be referred to as the θ direction.
< construction of bonding System >
First, the structure of the joining system according to the embodiment will be described with reference to fig. 1 and 2. Fig. 1 is a schematic diagram showing a configuration of a joining system according to an embodiment. Fig. 2 is a schematic view showing a state before the first substrate and the second substrate are bonded according to the embodiment.
The bonding system 1 shown in fig. 1 bonds the first substrate W1 and the second substrate W2 to form a stacked substrate T (see fig. 2).
The first substrate W1 and the second substrate W2 are substrates on which a plurality of electronic circuits are formed on a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer. The diameters of the first substrate W1 and the second substrate W2 are substantially the same. One of the first substrate W1 and the second substrate W2 may be, for example, a substrate on which no electronic circuit is formed.
As shown in fig. 2, the plate surface of the first substrate W1 on the side to be bonded to the second substrate W2 is referred to as "bonding surface W1 j", and the plate surface on the side opposite to the bonding surface W1j is referred to as "non-bonding surface W1 n". Among the plate surfaces of the second substrate W2, the plate surface on the side bonded to the first substrate W1 is referred to as "bonded surface W2 j", and the plate surface on the side opposite to the bonded surface W2j is referred to as "non-bonded surface W2 n".
As shown in fig. 1, the bonding system 1 includes a loading/unloading station 2, a processing station 3, and an inspection station 4. The carry-in/out station 2 is disposed on the negative X-axis side of the processing station 3 and is connected to the processing station 3 integrally. The inspection station 4 is disposed on the positive X-axis direction side of the processing station 3 and is integrally connected to the processing station 3.
The loading/unloading station 2 includes a mounting table 10 and a conveying area 20. The mounting table 10 includes a plurality of mounting plates 11. Cassettes C1 to C4 for horizontally storing a plurality of (e.g., 25) substrates are placed on the respective placement plates 11. The cassette C1 can accommodate a plurality of first substrates W1, the cassette C2 can accommodate a plurality of second substrates W2, and the cassette C3 can accommodate a plurality of stacked substrates T. The cassette C4 is a cassette for collecting substrates with defects, for example. The number of cartridges C1 to C4 mounted on the mounting plate 11 is not limited to the number shown in the drawings.
The conveying areas 20 are disposed adjacent to each other on the positive X-axis direction side of the mounting table 10. The conveyance area 20 is provided with a conveyance path 21 extending in the Y-axis direction and a conveyance device 22 movable along the conveyance path 21. The conveyance device 22 can move not only in the Y-axis direction but also in the X-axis direction, and can rotate around the Z-axis. The conveyance device 22 conveys the first substrate W1, the second substrate W2, and the stacked substrate T between the cassettes C1 to C4 placed on the mounting plate 11 and the third process block G3 of the process station 3, which will be described later.
Three processing blocks G1, G2, G3, for example, are provided in the processing station 3. The first processing block G1 is disposed on the rear side (the Y-axis positive direction side in fig. 1) of the processing station 3. The second process block G2 is disposed on the front side of the process station 3 (the Y-axis negative side in fig. 1), and the third process block G3 is disposed on the carry-in/out station 2 side of the process station 3 (the X-axis negative side in fig. 1).
The first processing block G1 is provided with a surface modification apparatus 30 for modifying the bonding surfaces W1j, W2j of the first substrate W1 and the second substrate W2. The surface modification apparatus 30 modifies the bonding surfaces W1j and W2j so as to be hydrophilized later by cutting the bonds of SiO2 in the bonding surfaces W1j and W2j of the first substrate W1 and the second substrate W2 to form single-bond SiO.
Specifically, in the surface modification apparatus 30, oxygen or nitrogen as a processing gas is excited into plasma in a reduced pressure atmosphere, for example, and ionized. Then, the bonding surfaces W1j and W2j are modified by plasma treatment by irradiating the oxygen ions or the nitrogen ions to the bonding surfaces W1j and W2j of the first substrate W1 and the second substrate W2.
In addition, in the first processing block G1, the surface hydrophilization apparatus 40 is disposed. The surface hydrophilizing apparatus 40 hydrophilizes the bonding surfaces W1j and W2j of the first substrate W1 and the second substrate W2 with pure water, for example, and cleans the bonding surfaces W1j and W2 j. Specifically, the surface hydrophilizing apparatus 40 supplies pure water onto the first substrate W1 or the second substrate W2 while rotating the first substrate W1 or the second substrate W2 held by the spin chuck, for example. Thus, the pure water supplied to the first substrate W1 or the second substrate W2 diffuses on the bonding surfaces W1j and W2j of the first substrate W1 or the second substrate W2, and hydrophilizes the bonding surfaces W1j and W2 j.
Here, an example in which the surface modification apparatus 30 and the surface-hydrophilizing apparatus 40 are arranged in a lateral arrangement is shown, but the surface-hydrophilizing apparatus 40 may be stacked above the surface modification apparatus 30.
At a second processing block G2, a bonding device 41 is arranged. The bonding apparatus 41 bonds the hydrophilized first substrate W1 and second substrate W2 by intermolecular force. The structure of the engagement device 41 will be described later.
The conveyance area 60 is formed in an area surrounded by the first processing block G1, the second processing block G2, and the third processing block G3. A conveyance device 61 is disposed in the conveyance area 60. The transfer device 61 has a transfer arm that is movable in, for example, the vertical direction and the horizontal direction and is movable about the vertical axis. The conveying device 61 moves in the conveying region 60 to convey the first substrate W1, the second substrate W2, and the stacked substrate T to predetermined devices in the first processing block G1, the second processing block G2, and the third processing block G3 adjacent to the conveying region 60.
An inspection device 80 is provided at the inspection station 4. The inspection device 80 inspects the stacked substrate T formed by the bonding device 41.
The joining system 1 further includes a control device 70. The control device 70 controls the operation of the joining system 1. The configuration of the control device 70 will be described later.
< Structure of bonding apparatus >
Next, the structure of the joining device 41 will be described with reference to fig. 3. Fig. 3 is a schematic diagram showing a structure of a bonding apparatus 41 according to the embodiment.
As shown in fig. 3, the joining device 41 includes a first holding portion 140, a second holding portion 141, and a striker 190.
The first holding portion 140 has a main body portion 170. The main body portion 170 is supported by a support member 180. Through holes 176 that penetrate the support member 180 and the body portion 170 in the vertical direction are formed in the support member 180 and the body portion 170. The through-hole 176 corresponds to the center of the first substrate W1 sucked and held by the first holding portion 140. A pressing pin 191 of the striker 190 penetrates the through hole 176.
The striker 190 is disposed on the upper surface of the support member 180, and includes a pressing pin 191, an actuator portion 192, and a linear motion mechanism 193. The pressing pin 191 is a columnar member extending in the vertical direction, and is supported by the actuator portion 192.
The actuator unit 192 generates a fixed pressure in a fixed direction (here, vertically downward) by air supplied from, for example, an electropneumatic regulator (not shown). The actuator unit 192 can control the pressing load applied to the center portion of the first substrate W1 by coming into contact with the center portion of the first substrate W1 with the air supplied from the electro-pneumatic regulator. The tip end portion of the actuator portion 192 is vertically movable up and down through the through hole 176 by air from the electro-pneumatic regulator.
The actuator section 192 is supported by a linear motion mechanism 193. The linear motion mechanism 193 moves the actuator portion 192 in the vertical direction by a driving portion having a built-in motor, for example.
The striker 190 controls the movement of the actuator unit 192 by the linear motion mechanism 193, and controls the pressing load of the pressing pin 191 on the first substrate W1 by the actuator unit 192. Thus, the striker 190 presses the center portion of the first substrate W1 sucked and held by the first holding portion 140 to bring the first substrate W1 into contact with the second substrate W2.
The lower surface of the body 170 is provided with a plurality of pins 171 that contact the upper surface (non-bonding surface W1n) of the first substrate W1. The plurality of pins 171 have a diameter of 0.1mm to 1mm and a height of several tens μm to several hundreds μm, for example. The plurality of pins 171 are arranged at equal intervals of, for example, 2 mm.
The first holding portion 140 includes a plurality of suction portions for sucking the first substrate W1 in a partial region of the region where the plurality of pins 171 are provided. Specifically, the first holding portion 140 is provided with a plurality of outer suction portions 301 and a plurality of inner suction portions 302 on the lower surface of the body portion 170, which are configured to suck the first substrate W1 by vacuuming the first substrate W1. The outer suction portions 301 and the inner suction portions 302 have arc-shaped suction areas in a plan view. The outer suction portions 301 and the inner suction portions 302 have the same height as the pins 171.
The plurality of outer suction portions 301 are disposed on the outer periphery of the body portion 170. The outer suction portions 301 are connected to a suction device, not shown, such as a vacuum pump, and suck the outer peripheral portion of the first substrate W1 by evacuation.
The plurality of inner suction portions 302 are arranged circumferentially inside the plurality of outer suction portions 301 in the radial direction of the body portion 170. The inner suction portions 302 are connected to a suction device, not shown, such as a vacuum pump, and suck the region between the outer peripheral portion and the central portion of the first substrate W1 by evacuation.
The second holding portion 141 will be described. The second holder 141 has a main body portion 200, and the main body portion 200 has the same diameter as the second substrate W2 or a larger diameter than the second substrate W2. Here, the second holding portion 141 having a larger diameter than the second substrate W2 is shown. The upper surface of the body 200 is an opposing surface that faces the lower surface (non-bonding surface W2n) of the second substrate W2.
The upper surface of the body 200 is provided with a plurality of pins 201 that contact the lower surface (non-bonding surface Wn2) of the second substrate W2. The plurality of pins 201 have a diameter of 0.1mm to 1mm and a height of several tens μm to several hundreds μm, for example. The plurality of pins 201 are arranged at equal intervals of, for example, 2 mm.
Further, on the upper surface of the body 200, a lower rib 202 is annularly provided outside the plurality of pins 201. The lower rib 202 is formed in a ring shape, and supports the outer peripheral portion of the second substrate W2 over the entire periphery.
The main body 200 has a plurality of lower suction ports 203. A plurality of lower suction ports 203 are provided in the suction region surrounded by the lower ribs 202. The plurality of lower suction ports 203 are connected to a suction device, not shown, such as a vacuum pump, via a suction tube, not shown.
The second holding portion 141 reduces the pressure in the suction region surrounded by the lower ribs 202 by evacuating the suction region from the plurality of lower suction ports 203. Thereby, the second substrate W2 placed on the suction region is sucked and held by the second holding portion 141.
Since the lower ribs 202 support the outer peripheral portion of the lower surface of the second substrate W2 over the entire periphery, the outer peripheral portion of the second substrate W2 can be appropriately evacuated. This allows the entire surface of the second substrate W2 to be sucked and held. Further, since the lower surface of the second substrate W2 is supported by the plurality of pins 201, the second substrate W2 is easily peeled off from the second holding portion 141 when the evacuation of the second substrate W2 is released.
Although not shown here, the joining device 41 includes a conveying unit, a reversing mechanism, a position adjusting mechanism, and the like at a stage preceding the first holding unit 140, the second holding unit 141, and the like shown in fig. 3. The transfer unit temporarily mounts the first substrate W1, the second substrate W2, and the stacked substrate T. The position adjustment mechanism adjusts the horizontal direction orientations of the first and second substrates W1 and W2. The reversing mechanism reverses the surface and the back of the first substrate W1.
< Structure of inspection apparatus >
Next, the structure of the inspection apparatus will be described with reference to fig. 4 and 5. Fig. 4 is a schematic diagram showing a configuration of an inspection apparatus according to an embodiment. Fig. 5 is a schematic diagram showing a configuration of a holding unit of the inspection apparatus according to the embodiment. Fig. 4 is a schematic view of the inspection apparatus viewed from the side, and fig. 5 is a schematic view of the holding portion of the inspection apparatus viewed from above.
As shown in fig. 4, the inspection apparatus 80 includes a holding unit 400, an imaging unit 500, and an illumination unit 600. As shown in fig. 5, the inspection apparatus 80 includes a diagnosis unit 700.
As shown in fig. 4 and 5, the holding portion 400 holds the stacked substrate T horizontally. The holding portion 400 includes a main body portion 410 and a plurality of support members 420.
The main body 410 is a flat frame-shaped member having an opening 411 having a diameter larger than that of the stacked substrate T. The main body 410 is connected to a moving mechanism 440, and can be moved in the horizontal direction (X-axis direction and Y-axis direction) by the moving mechanism 440 and rotated about the vertical axis.
The plurality of support members 420 are provided on the main body 410 so as to extend toward the center of the opening 411. The outer peripheral portion of the stacked substrate T is supported by the distal end portions of the plurality of support members 420. The front end portions of the support members 420 are connected to a suction device 480 such as a vacuum pump via a suction tube 460, and the outer peripheral portion of the lower surface of the stacked substrate T is sucked by vacuum suction.
The imaging unit 500 includes a macro imaging unit 510, a micro imaging unit 520, a fixing unit 530, and a lifting mechanism 540.
The macro imaging unit 510 and the microscopic imaging unit 520 are disposed above the holding unit 400. The macro imaging unit 510 includes a camera lens 511 for macro imaging and an imaging element 512 such as a CCD image sensor or a CMOS image sensor. The microscopic imaging unit 520 includes a camera lens 521 for microscopic imaging, and an imaging device 522 such as a CCD image sensor or a CMOS image sensor. The magnification of the camera lens 511 included in the macro imaging unit 510 is, for example, 10 times. The magnification of the camera lens 521 provided in the microscopic imaging unit 520 is, for example, 50 times.
The macro imaging unit 510 and the microscopic imaging unit 520 are fixed to the fixing unit 530 in a state where the camera lenses 511 and 521 are oriented vertically downward. The fixing portion 530 is connected to an elevating mechanism 540, and is moved (elevated) in the vertical direction by the elevating mechanism 540. The image pickup unit 500 can adjust the distances between the macro image pickup unit 510 and the micro image pickup unit 520 and the stacked substrate T by moving the fixing unit 530 up and down using the lifting mechanism 540.
The illumination unit 600 includes a macro illumination unit 610, a micro illumination unit 620, a fixing unit 630, and an elevating mechanism 640.
The macro illumination unit 610 and the micro illumination unit 620 are disposed below the holding unit 400. Specifically, the macro illumination unit 610 is disposed at a position facing the macro imaging unit 510 across the stacked substrate T held by the holding unit 400. The microscope illumination unit 620 is disposed at a position facing the microscope imaging unit 520 across the stacked substrate T held by the holding unit 400.
The macro illumination unit 610 includes a light source 611 and a light collecting unit 612. The light source 611 irradiates near infrared light of 1000 to 1200nm, for example. The light collecting unit 612 is, for example, a light collecting lens for converging light emitted from the light source 611 to one point. The microscopic illumination section 620 has the same structure as the macro illumination section 610. That is, the microscopic illumination unit 620 includes a light source 621 and a light collecting unit 622, and these configurations are similar to the light source 611 and the light collecting unit 612 included in the microscopic illumination unit 610.
The light sources 611 and 621 may be disposed outside the macro illumination unit 610 and the micro illumination unit 620. In this case, the light sources 611 and 621 may supply light to the interior of the macro illumination unit 610 and the micro illumination unit 620 via optical fibers or the like.
The macro illumination unit 610 and the micro illumination unit 620 are fixed to the fixing unit 630 with the optical axis directed in the vertical direction. The fixing portion 630 is connected to an elevating mechanism 640, and is moved (elevated) in the vertical direction by the elevating mechanism 640. The illumination unit 600 can adjust the distance between the macro illumination unit 610 and the micro illumination unit 620 and the stacked substrate T by moving up and down the fixing unit 630 using the lifting mechanism 640.
The inspection apparatus 80 uses the microscopic imaging unit 520 and the microscopic illumination unit 620 to image measurement marks formed on the first substrate W1 and the second substrate W2, respectively. Fig. 6 is a diagram showing an example of an imaging method for measuring a marker. Fig. 7 is a diagram showing an example of the measurement marker. The macro imaging unit 510 and the macro illumination unit 610 are used for processing for specifying a position of a measurement mark, but this point will be described later.
As shown in fig. 6, the microscopic illumination unit 620 is fixed to the fixing unit 630 such that the optical axis Ax of light emitted from the light source 621 faces the vertical direction (see fig. 4). The microscopic imaging unit 520 is fixed to the fixing unit 530 such that the optical axis Ax passes through the center of the camera lens 521 and intersects the camera lens 521 and the imaging element 522 perpendicularly (see fig. 4). Here, the case where the imaging unit 500 is disposed above the stacked substrate T and the illumination unit 600 is disposed below the stacked substrate T is illustrated, but the illumination unit 600 may be disposed above the stacked substrate T and the imaging unit 500 may be disposed below the stacked substrate T.
The distance between the microscopic imaging unit 520 and the microscopic illumination unit 620 is set to a distance at which the focal point of the camera lens 521 coincides with the focal point of the light collection unit 622, for example, by an adjustment operation performed manually in advance. The inspection apparatus 80 moves the microscopic imaging unit 520 and the microscopic illumination unit 620 up and down by interlocking the elevating mechanism 540 and the elevating mechanism 640 so as to ensure a distance between the focal point of the camera lens 521 and the focal point of the light condensing unit 622.
The inspection apparatus 80 moves the microscopic imaging unit 520 and the microscopic illumination unit 620 up and down integrally by using the fixing unit 530 and the lifting mechanism 540, thereby positioning the focal points of the camera lens 521 and the light condensing unit 622 at the measurement marks M1 and M2 formed on the superimposed substrate T. Then, the inspection device 80 images the measurement markers M1 and M2. Specifically, the light vertically emitted upward from the microscopic illumination unit 620 reaches the imaging device 522 of the microscopic imaging unit 520 via the second substrate W2 and the first substrate W1. That is, the microscopic imaging unit 520 images the measurement marks M1 and M2 by the transmitted light transmitted through the stacked substrate T. The image data captured by the microscopic image capturing unit 520 is output to the control device 70.
As shown in fig. 7, the image data includes images of the measurement mark M1 formed on the first substrate W1 and the measurement mark M2 formed on the second substrate W2. The control device 70 performs image recognition processing such as edge detection on the image data to acquire measurement results such as coordinates of the gravity points G1 and G2 of the measurement marks M1 and M2 and offsets of the gravity points G1 and G2, and checks the bonding state of the superimposed substrates T based on the acquired measurement results.
When the light amount of the light emitted from the light source 621 of the microscope illuminating unit 620 changes, the thickness of the outline of the measurement mark M1 or the measurement mark M2 included in the image data may change, and the position of the edge detected by the edge detection may change. In this case, there is a possibility that measurement results such as coordinates of the gravity points G1 and G2 and offsets of the gravity points G1 and G2 may be deviated. Therefore, in order to maintain the measurement accuracy of the inspection apparatus 80, it is desirable that the light amount of the light emitted from the light source 621 of the microscopic illumination section 620 is always constant.
However, the light source 621 provided in the microscopic illumination section 620 gradually deteriorates with use, and accordingly, the actually obtained light amount is lower than the set light amount. That is, the light amount of the light source 621 provided in the microscopic illumination section 620 changes (decreases) with use.
Even when the optical axis of the microscopic illumination unit 620 is deviated from the vertical direction, the measurement result of the inspection apparatus 80 may be deviated.
Therefore, in the bonding system 1, the inspection apparatus 80 is provided with the diagnosis unit 700, and the light quantity inspection and the optical axis inspection of the microscopic illumination unit 620 are performed using the diagnosis unit 700.
As shown in fig. 5, the diagnostic unit 700 includes a mounting portion 710 provided on the body portion 410 of the holding unit 400 and extending toward the center of the opening 411, and a damping member 720 mounted on the distal end portion of the mounting portion 710. The mounting portion 710 is disposed between two adjacent support members 420. The mounting portion 710 is shorter than the support members 420, and the damping member 720 is disposed at a position exposed from the stacked substrate T supported by the plurality of support members 420 in a plan view. Thus, the inspection apparatus 80 can perform the light amount inspection and the optical axis inspection using the diagnostic unit 700 even in the state where the stacked substrate T is held by the holding unit 400.
Fig. 8 is a diagram showing the structure of the damping member 720 according to the embodiment. Fig. 9 is a diagram showing an example of the calibration marks formed on the damping member 720.
As shown in fig. 8, the damping member 720 includes a glass plate 721 and a plurality of (two in this case) silicon plates 722. The glass plate 721 and the two silicon plates 722 are laminated in the order of laminating the silicon plate 722, the glass plate 721, and the silicon plate 722 from below.
The light quantity inspection is performed by receiving the light quantity of the light irradiated from the light source 621 and transmitted through the attenuating member 720 by the microscopic imaging section 520. The light amount of the light source 621 is set to a relatively high value so as to transmit through the stacked substrate T. Therefore, in the light amount inspection, when the light emitted from the light source 621 is directly captured by the microscopic imaging unit 520, there is a possibility that an appropriate image cannot be obtained due to an excessively high light amount. Therefore, in the inspection apparatus 80, the silicon plate 722 is used to attenuate light emitted from the light source 621 in the same manner as the stacked substrate T. This enables the light amount inspection to be performed appropriately. The damping member 720 may include at least one silicon plate 722.
The inspection device 80 may perform the light amount inspection every time a predetermined time (for example, 24 points per day) arrives. The inspection device 80 may perform the light amount inspection every time the number of processed sheets or the number of processed lots of the stacked substrates T reaches a predetermined number. The inspection device 80 may perform the light amount inspection at predetermined time intervals (for example, at 12-hour intervals). As described above, since the inspection apparatus 80 can perform the light amount inspection even in a state where the stacked substrate T is held by the holding portion 400, the light amount inspection can be performed periodically and easily regardless of the presence or absence of the stacked substrate T.
The alignment mark M3 is formed on the glass plate 721. The alignment mark M3 is formed on the glass plate 721 by, for example, evaporation. By forming the calibration mark M3 on the glass plate 721 in this manner, the damping member 720 can be formed at a lower price than when the calibration mark M3 is formed on the silicon plate 722, for example. Note that the damping member 720 does not necessarily have to include the glass plate 721, and the alignment mark M3 may be formed on the silicon plate 722.
As shown in fig. 9, the calibration mark M3 includes, for example, a first quadrangle M3a and a second quadrangle M3 b. The first quadrangle M3a and the second quadrangle M3b have a uniform thickness and have a quadrangular frame shape. The second quadrangle M3b is smaller than the first quadrangle M3a and is disposed inside the first quadrangle M3 a. In addition, the position of the center of gravity G3a of the first quadrangle M3a coincides with the position of the center of gravity G3b of the second quadrangle M3 b.
The optical axis inspection is performed by inspecting the degree of deviation of the coordinates of the center of gravity G3a of the first quadrangle M3a from the coordinates of the center of gravity G3b of the second quadrangle M3b calculated based on the image data captured by the microscopic imaging section 520. That is, if the optical axis of the micro-illumination unit 620 is tilted, the coordinates of the centers of gravity G3a and G3b are not matched due to the uneven thickness of the frames of the first quadrangle M3a and the second quadrangle M3b included in the image data. The inspection device 80 can determine whether the optical axis is tilted by inspecting the shift of the coordinates of the centers of gravity G3a, G3 b.
The decrease in the light amount due to the deterioration of the light source 621 occurs with time, and the deviation of the optical axis is often sudden, for example, when a person touches the light source during maintenance. Therefore, the inspection device 80 can reduce the frequency of performing the optical axis inspection as compared to the frequency of performing the light amount inspection. For example, the inspection device 80 may perform optical axis inspection once every time light amount inspection is performed a plurality of times. The inspection device 80 may perform the optical axis inspection when the power is turned on.
< construction of control device >
Next, the configuration of the control device 70 will be described with reference to fig. 10. Fig. 10 is a block diagram showing a configuration of a control device 70 according to the embodiment. Fig. 10 shows a configuration related to the inspection device 80 among the configurations provided in the control device 70.
As shown in fig. 10, the control device 70 includes a control unit 71 and a storage unit 72. The control unit 71 includes a measurement control unit 71a and a diagnosis control unit 71 b. The storage unit 72 stores light amount initial information 72 a.
The control device 70 includes a computer having a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), an HDD (Hard Disk Drive), an input/output port, and various circuits, for example.
The CPU of the computer functions as the measurement control unit 71a and the diagnosis control unit 71b of the control unit 71 by, for example, reading and executing programs stored in the ROM. At least one or both of the measurement control Unit 71a and the diagnosis control Unit 71b are configured by hardware such as an ASIC (Application Specific Integrated Circuit), a GPU (Graphics Processing Unit), and an FPGA (Field Programmable Gate Array).
The storage unit 72 corresponds to, for example, a RAM or an HDD. The RAM, HDD can store light amount initial information 72 a. Further, the control device 70 may acquire the above-described program or various information via another computer or a portable recording medium connected via a wired or wireless network.
(measurement control section)
The measurement control unit 71a sets a plurality of (for example, 5 to 13) measurement points on the plate surface of the stacked substrate T, and causes the inspection device 80 to perform measurement of the stacked substrate T at each measurement point.
Specifically, in the inspection apparatus 80, first, the stacked substrate T is carried in. The stacked substrate T is conveyed into the inspection apparatus 80 by the conveying apparatus 61 (see fig. 1). The inspection apparatus 80 receives the stacked substrate T from the conveyance apparatus 61 by using a lifter, not shown, and moves the lifter to place the stacked substrate T on the plurality of support members 420. Thereafter, the stacked substrate T is vacuumed by the suction device 480 through the suction tube 460, and the stacked substrate T is sucked and held by the holding unit 400.
Next, θ alignment processing is performed in the inspection apparatus 80. The θ alignment process is a process of adjusting the position of the superimposed substrate T in the rotation direction. Specifically, the inspection device 80 uses the macro imaging unit 510 to capture a plurality of reference points (for example, a reference point located at the center of the registration substrate T and a reference point located in the vicinity thereof) present on the registration substrate T. Then, the inspection apparatus 80 calculates a rotation angle of the stacked substrate T from the obtained image, and rotates the stacked substrate T so that the rotation angle becomes 0 degree using the moving mechanism 440. The reference points are formed on the first substrate W1 or the second substrate W2 together with a pattern in each exposure area (shot) when forming a pattern on the first substrate W1 or the second substrate W2 by, for example, an exposure process. That is, the inspection apparatus 80 rotates the superimposed substrate T so that the arrangement direction of the patterns in each exposure region is always the same direction.
Next, the measurement process is performed in the inspection apparatus 80. Specifically, the inspection apparatus 80 moves the holding unit 400 horizontally by using the moving mechanism 440, thereby positioning the microscope imaging unit 520 and the microscope illumination unit 620 on the vertical line of the first measurement point. After that, the inspection apparatus 80 performs focusing of the microscopic imaging unit 520, position correction of the holding unit 400, and the like, and then performs imaging of the measurement marks M1 and M2 located at the first measurement point by using the microscopic imaging unit 520 and the microscopic illumination unit 620.
The inspection device 80 performs the same process for the remaining measurement points. That is, the inspection device 80 repeatedly performs the above-described processing according to the number of measurement points.
The measurement control unit 71a acquires image data as a measurement result from the inspection device 80. Then, the measurement controller 71a derives an inspection result including a shift amount between the first substrate W1 and the second substrate W2 among the superimposed substrates T based on the acquired image data. Specifically, the measurement controller 71a analyzes the image data to calculate the X coordinate (X1) and the Y coordinate (Y1) of the measurement marker M1, and the X coordinate (X2) and the Y coordinate (Y2) of the measurement marker M2 at each measurement point. The measurement controller 71a calculates the shift amount (Δ X) of the X-coordinate of the measurement markers M1 and M2 and the shift amount (Δ Y) of the Y-coordinate of the measurement markers M1 and M2. Then, the measurement controller 71a substitutes the first measurement point number (here, 5) calculation results (x1, y1, x2, y2, Δ x, Δ y) into a calculation model prepared in advance.
The calculation model decomposes the amount of displacement of the first substrate W1 with respect to the second substrate W2 into components of a displacement in the X-axis direction (X displacement), a displacement in the Y-axis direction (Y displacement), a displacement in the rotation direction about the vertical axis (rotation), and a displacement due to expansion and contraction (scaling), for example. The measurement control unit 71a obtains the inspection result for each component using the calculation model, and stores the obtained inspection result in the storage unit 72.
(diagnosis control section)
The diagnosis control unit 71b controls the operations of the light quantity inspection and the optical axis inspection performed by the inspection device 80.
The light amount initial information 72a stored in the storage section 72 is used in the light amount inspection. The light amount initial information 72a is information indicating a relationship between the set light amount of the light source 621 provided in the microscopic illumination unit 620 and the light receiving amount when the microscopic imaging unit 520 receives light emitted from the light source 621 at the set light amount via the attenuation member 720. The set light amount is a command value of the light amount output to the light source 621. For example, in the light amount initial information 72a, the set light amount "100" of the light source 621 is associated with the light receiving amount "80" of the microscopic imaging unit 520.
The light amount initial information 72a is information indicating an initial relationship between the set light amount of the light source 621 and the light receiving amount of the microscopic imaging section 520 before the deterioration of the light source 621 occurs, and the light amount initial information 72a is generated, for example, at the time of start-up or initial use of the bonding system 1. When the light source 621 is deteriorated by use, even if the light source 621 is instructed to emit light with the set light amount "100", the light amount actually obtained, that is, the light receiving amount of the microscopic imaging section 520 is lower than "80".
Further, specific procedures of the light amount inspection process and the optical axis inspection process will be described later with reference to fig. 12 and 13.
< concrete operation of bonding System >
Next, a specific operation of the joining system 1 will be described. First, a process before forming the stacked substrate T by the bonding apparatus 41 will be described with reference to fig. 11. Fig. 11 is a flowchart showing an example of a process before the stacked substrates T are formed by the bonding apparatus 41 among the processes performed by the bonding system 1. Various processes shown in fig. 11 are executed based on control performed by control device 70.
First, the cassette C1 containing the plurality of first substrates W1, the cassette C2 containing the plurality of second substrates W2, and the empty cassette C3 are placed on the predetermined mounting plate 11 of the carry-in/out station 2. Thereafter, the first substrate W1 in the cassette C1 is taken out by the transfer device 22 and transferred to the transfer device disposed in the third process block G3.
Next, the first substrate W1 is conveyed to the surface modification apparatus 30 of the first process block G1 by the conveying apparatus 61. In the surface modification apparatus 30, oxygen gas as a processing gas is excited into plasma in a predetermined reduced pressure atmosphere, and ionized. The oxygen ions are irradiated to the bonding surface of the first substrate W1, and the plasma treatment is performed on the bonding surface. Thereby, the bonding surface of the first substrate W1 is modified (step S101).
Subsequently, the first substrate W1 is conveyed to the surface hydrophilization apparatus 40 of the second process block G1 by the conveyance device 61. In the surface hydrophilization apparatus 40, pure water is supplied onto the first substrate W1 while the first substrate W1 held by the spin chuck is rotated. This hydrophilizes the bonding surface of the first substrate W1. The bonding surface of the first substrate W1 is cleaned by the pure water (step S102).
Next, the first substrate W1 is conveyed to the bonding apparatus 41 of the second process block G2 by the conveying apparatus 61. The first substrate W1 carried into the bonding apparatus 41 is conveyed to the position adjustment mechanism via the conveying section, and the orientation in the horizontal direction is adjusted by the position adjustment mechanism (step S103).
Thereafter, the first substrate W1 is delivered from the position adjustment mechanism to the flipper, and the surface and the back of the first substrate W1 are flipped by the flipper (step S104). Specifically, the bonding surface W1j of the first substrate W1 is directed downward.
After that, the first substrate W1 is delivered from the reversing mechanism to the first holding portion 140. The first substrate W1 is sucked and held by the first holding portion 140 with its recessed portion oriented in a predetermined direction (step S105).
The processing of the second substrate W2 is repeated with the processing of steps S101 to S105 with respect to the first substrate W1. First, the second substrate W2 in the cassette C2 is taken out by the transfer device 22 and transferred to the transfer device disposed in the third process block G3.
Next, the second substrate W2 is conveyed to the surface modification apparatus 30 by the conveyance apparatus 61, and the bonding surface W2j of the second substrate W2 is modified (step S106). Thereafter, the second substrate W2 is conveyed to the surface hydrophilizing apparatus 40 by the conveying device 61 to hydrophilize the bonding surface W2j of the second substrate W2 and clean the bonding surface (step S107).
Thereafter, the second substrate W2 is conveyed to the bonding apparatus 41 by the conveying apparatus 61. The second substrate W2 carried into the bonding apparatus 41 is conveyed to the position adjustment mechanism via the conveying section. Then, the horizontal direction of the second substrate W2 is adjusted by the position adjustment mechanism (step S108).
Thereafter, the second substrate W2 is conveyed to the second holding portion 141, and the second substrate W2 is sucked and held by the second holding portion 141 with the groove portion of the second substrate W2 oriented in a predetermined direction (step S109).
Next, the horizontal position of the first substrate W1 held by the first holding portion 140 and the second substrate W2 held by the second holding portion 141 is adjusted (step S110).
Next, the vertical positions of the first substrate W1 held by the first holding portion 140 and the second substrate W2 held by the second holding portion 141 are adjusted (step S111). Specifically, the second substrate W2 is moved closer to the first substrate W1 by the first moving unit 160 moving the second holding unit 141 vertically upward.
Next, after the suction holding of the first substrate W1 by the plurality of inner suction portions 302 is released (step S112), the center portion of the first substrate W1 is pressed downward by lowering the pressing pin 191 of the striker 190 (step S113).
When the central portion of the first substrate W1 is in contact with the central portion of the second substrate W2 and the central portions of the first substrate W1 and the second substrate W2 are pressed by the striker 190 with a prescribed force, the bonding is started between the central portion of the pressed first substrate W1 and the central portion of the second substrate W2. That is, since the bonding surface W1j of the first substrate W1 and the bonding surface W2j of the second substrate W2 are modified in steps S101 and S109, van der waals force (intermolecular force) is generated between the bonding surfaces W1j and W2j, and the bonding surfaces W1j and W2j are bonded to each other. Since the bonding surface W1j of the first substrate W1 and the bonding surface W2j of the second substrate W2 are hydrophilized in steps S102 and S110, the hydrophilic groups on the bonding surfaces W1j and W2j are hydrogen-bonded to each other, and the bonding surfaces W1j and W2j are firmly bonded to each other. In this manner, the joint region is formed.
Thereafter, a bonding wave (bonding wave) in which the bonding area expands from the center portions of the first and second substrates W1 and W2 toward the outer peripheral portions is generated between the first and second substrates W1 and W2. Thereafter, the suction holding of the first substrate W1 by the plurality of outer suction portions 301 is released (step S114). Thereby, the outer peripheral portion of the first substrate W1 sucked and held by the outer suction unit 301 falls. As a result, the bonding surface W1j of the first substrate W1 and the bonding surface W2j of the second substrate W2 entirely abut against each other, and the stacked substrate T is formed.
Thereafter, the pressing pin 191 is raised to the first holding portion 140, and the suction holding of the second substrate W2 by the second holding portion 141 is released. Thereafter, the stacked substrate T is carried out of the bonding apparatus 41 by the conveying apparatus 61. In this manner, the series of joining processes is ended.
Next, the procedure of the light amount inspection process of the inspection device 80 will be described with reference to fig. 12. Fig. 12 is a flowchart showing an example of the procedure of the light amount inspection processing. Here, although the processing procedure in the case of performing the light quantity inspection of the microscopic illumination unit 620 is shown as an example, the light quantity inspection of the microscopic illumination unit 610 may be performed according to the same processing procedure. The light amount inspection process can be performed under the control of the diagnosis control unit 71 b.
As shown in fig. 12, in the inspection apparatus 80, first, the movement mechanism 440 (see fig. 4) moves the diagnostic unit 700, and the attenuation member 720 of the diagnostic unit 700 is disposed above the microscopic illumination unit 620 (below the microscopic imaging unit 520) (step S201).
Next, in the inspection apparatus 80, the light source 621 of the microscopic illumination section 620 is caused to emit light at a set light amount in addition to the focusing of the microscopic imaging section 520 and the like (step S202). The light emitted from the light source 621 passes through the attenuation member 720 and is received by the imaging device 522 of the microscopic imaging unit 520.
Next, the diagnosis control unit 71b calculates the light receiving amount of the microscopic imaging unit 520 (hereinafter referred to as "measured light receiving amount") based on the image data captured by the microscopic imaging unit 520 (step S203). The diagnosis control unit 71b calculates a difference between the calculated measured light-receiving amount and the light-receiving amount (hereinafter referred to as "initial light-receiving amount") included in the light-amount initial information 72a (step S204). Then, the diagnosis control section 71b determines whether or not the difference between the measured light-receiving amount and the initial light-receiving amount is smaller than a threshold value (hereinafter referred to as "light amount threshold value") (step S205).
In step S205, if the difference between the measured received light amount and the initial received light amount is equal to or greater than the light amount threshold (no in step S205), that is, if the light amount of the light source 621 is not normal, the diagnosis control unit 71b determines whether or not the current mode is the automatic adjustment mode (step S206). If it is determined in step S206 that the automatic adjustment mode is set (yes in step S206), the diagnostic control unit 71b changes the set light amount of the light source 621 (step S207). Specifically, the diagnosis control section 71b increases the set light amount of the light source 621. For example, the diagnosis control unit 71b may increase the set light amount by only the difference between the measured light receiving amount and the initial light receiving amount. The diagnosis control unit 71b may increase the set light amount by a predetermined amount. When the process of step S206 is finished, the diagnostic control unit 71b returns to step S202 to cause the light source 621 to emit light at the changed set light amount.
On the other hand, if the automatic adjustment mode is not set in step S206 (no in step S206), the diagnosis control unit 71b performs a notification process (step S208). For example, the diagnosis control unit 71b may transmit information indicating that the light amount of the light source 621 has decreased to a higher-level device connected to the bonding system 1 via a network as the notification process. The diagnosis control unit 71b may operate an alarm device (alarm, lamp, etc.) provided in the joining system 1, which is not shown, as the notification process.
When the process of step S208 is finished, or when the difference between the measured light-receiving amount and the initial light-receiving amount in step S205 is smaller than the light-amount threshold value (yes in step S205), that is, when the light amount of the light source 621 is normal, the diagnosis control unit 71b finishes the light amount check process.
Next, the procedure of the optical axis inspection process in the inspection apparatus 80 will be described with reference to fig. 13. Fig. 13 is a flowchart showing an example of the procedure of the optical axis inspection processing.
As shown in fig. 13, in the inspection apparatus 80, first, the movement mechanism 440 (see fig. 4) moves the diagnosis unit 700, and the attenuation member 720 of the diagnosis unit 700 is disposed above the microscopic illumination unit 620 (below the microscopic imaging unit 520) (step S301).
Next, in the inspection apparatus 80, the light source 621 of the microscopic illumination section 620 is caused to emit light at a set light amount in addition to the focusing of the microscopic imaging section 520 and the like (step S302). Then, in the inspection apparatus 80, the microscopic imaging unit 520 images the alignment mark M3 formed on the damping member 720 (step S303).
Next, the diagnosis control section 71b calculates a distance between the gravity center G3a of the first quadrangle M3a and the gravity center G3b of the second quadrangle M3b as a marker measurement value based on the image data captured by the microscopic imaging section 520 (step S304). The diagnostic control unit 71b calculates the difference between the calculated marker measurement value and the normal value (hereinafter referred to as "Ref value") of the distance between the centers of gravity G3a and G3b (step S305). In the present embodiment, the case where Ref is 0, that is, the case where center of gravity G3a coincides with center of gravity G3b is described as an example, but Ref need not be 0.
Next, the diagnosis control unit 71b determines whether or not the difference between the flag measurement value and the Ref value is smaller than a threshold value (hereinafter referred to as "optical axis threshold value") (step S306). In this process, if the difference between the mark measurement value and the Ref value is larger than the optical axis threshold value (no in step S306), the diagnosis control unit 71b performs the notification process (step S307). For example, the diagnosis control unit 71b may transmit information indicating that the optical axis of the light source 621 is tilted to a higher-level device connected to the joining system 1 via a network as notification processing. The diagnosis control unit 71b may operate an alarm device (alarm, lamp, etc.) provided in the joining system 1, which is not shown, as the notification process.
When the process of step S307 is finished, or when the difference between the flag measurement value and the Ref value in step S306 is smaller than the optical axis threshold value (yes in step S306), the diagnosis control unit 71b finishes the optical axis inspection process.
As described above, the self-diagnosis method of the inspection apparatus (for example, the inspection apparatus 80) according to the embodiment is a self-diagnosis method of an inspection apparatus for inspecting a stacked substrate (for example, the stacked substrate T) in which a first substrate (for example, the first substrate W1) and a second substrate (for example, the second substrate W2) are bonded to each other, and includes a step of performing arrangement, a step of performing irradiation, a step of receiving light, and a step of determining an abnormality in light quantity. The arranging step moves a holding unit (e.g., holding unit 400) that holds the outer periphery of the stacked substrate and is provided with a diagnostic unit (e.g., diagnostic unit 700) having an attenuation member (e.g., attenuation member 720) for attenuating light, to arrange the attenuation member between an illumination unit (e.g., macro illumination unit 610 or micro illumination unit 620) arranged above and below the holding unit for irradiating light to the stacked substrate held by the holding unit and an imaging unit (e.g., macro imaging unit 510 or micro imaging unit 520) arranged above and below the holding unit and facing the illumination unit to image the stacked substrate held by the holding unit. The step of irradiating is to irradiate light with a set light amount from the illumination unit after the step of arranging. The step of receiving light is performed after the step of irradiating light, and the step of receiving light irradiated from the illumination unit and transmitted through the attenuation member uses the imaging unit. The step of determining the abnormality in the light quantity determines the abnormality in the light quantity of the light emitted from the illumination unit based on the light receiving quantity of the light received by the imaging unit after the step of receiving the light.
According to the self-diagnosis method of the inspection apparatus of the embodiment, the light quantity inspection of the illumination unit can be easily performed using the diagnosis unit built in the inspection apparatus. Therefore, the measurement accuracy of the inspection apparatus can be easily maintained.
In the step of determining the abnormality of the light amount, a difference between an initial light receiving amount (for example, an initial light receiving amount included in the light amount initial information 72 a) which is stored in advance as the light receiving amount of the light which is irradiated from the illumination section at the set light amount and received by the imaging section after passing through the attenuation member and the light receiving amount) of the light which is received by the imaging section in the step of performing the imaging is calculated, and when the difference is equal to or greater than a light amount threshold value, it is determined that the light amount of the light irradiated from the illumination section is abnormal. This makes it possible to easily detect deterioration due to use of the light source of the illumination unit.
The self-diagnosis method of the inspection apparatus according to the embodiment may further include a step of changing the set light quantity when the light quantity of the light emitted from the illumination unit is determined to be abnormal, in the step of determining the abnormality of the light quantity. This makes it possible to easily maintain a state in which the amount of light emitted from the illumination unit is always constant.
The attenuating element may also have calibration marks. In this case, the self-diagnosis method of the inspection apparatus according to the embodiment may further include a step of performing imaging and a step of determining the inclination of the optical axis. The step of imaging is performed after the step of irradiating, and the calibration mark is imaged by using an imaging unit. The step of determining the inclination of the optical axis is performed after the step of imaging, and the inclination of the optical axis of the illumination unit is determined based on the calibration mark imaged by the imaging unit. This enables the optical axis to be inspected for a tilt by using the diagnostic unit for inspecting the light quantity.
An inspection apparatus (e.g., an inspection apparatus 80) according to an embodiment is used for inspecting a stacked substrate (e.g., a stacked substrate T) in which a first substrate (e.g., a first substrate W1) and a second substrate (e.g., a second substrate W2) are bonded to each other, and includes a holding unit (e.g., a holding unit 400), an illumination unit (e.g., a macro illumination unit 610 or a micro illumination unit 620), an imaging unit (e.g., a macro imaging unit 510 or a micro imaging unit 520), a movement mechanism (e.g., a movement mechanism 440), and a diagnosis unit (e.g., a diagnosis unit 700). The holding portion holds the outer peripheral portion of the stacked substrate. The illumination unit is disposed above or below the holding unit and irradiates the stacked substrate held by the holding unit with light. The imaging unit is disposed at a position facing the illumination unit on the other of the upper side and the lower side of the holding unit, and is configured to image the superimposed substrate held by the holding unit. The moving mechanism moves the holding portion. The diagnosis unit is provided with a holding unit and has an attenuation member (for example, an attenuation member 720) for attenuating light emitted from the illumination unit.
According to the inspection apparatus of the embodiment, the light amount inspection of the illumination unit can be easily performed using the diagnosis unit built in the inspection apparatus. Therefore, the measurement accuracy of the inspection apparatus can be easily maintained.
The attenuating member may also include silicon (e.g., silicon plate 722). The light quantity inspection can be appropriately performed by attenuating light emitted from the illumination unit using silicon in the same manner as the stacked substrate.
The damping member may also include silicon, glass laminated to silicon (e.g., glass plate 721), and a calibration mark formed on the glass (e.g., calibration mark M3). By forming the calibration marks in glass, the attenuation member can be formed at a lower price than when the calibration marks are formed in silicon, for example.
The holding portion may include a main body portion (e.g., main body portion 410) and a plurality of support members (e.g., support members 420). The main body portion has an opening (e.g., opening 411) having a diameter larger than that of the stacked substrate. The plurality of support members are provided on the main body and extend toward the center of the opening, and support the outer peripheral portion of the stacked substrate at the distal end portions of the plurality of support members. In this case, the diagnostic unit may be disposed between two adjacent support members. This can suppress an increase in size of the inspection apparatus 80.
The diagnostic unit may include a mounting unit (e.g., mounting unit 710) and a damping member (e.g., damping member 720). The mounting portion is provided to the holding portion and extends toward the center of the opening. The damping member is attached to the front end of the attachment portion. In this case, the damping member is disposed at a position exposed from the stacked substrate when viewed from a plane perpendicular to the plate surface of the stacked substrate (for example, fig. 5) of the inspection apparatus. Thus, even in a state where the stacked substrate is held by the holding portion, self-diagnosis can be performed using the diagnosis portion.
In the above-described embodiments, a bonding apparatus in which the center portion of the first substrate is pressed by a striker to be brought into contact with the second substrate and the first substrate and the second substrate are bonded using an intermolecular force generated between the bonding surfaces of the first substrate and the second substrate whose surfaces have been modified has been described as an example. However, the bonding device may be a type of bonding device that bonds the first substrate and the second substrate via an adhesive, for example.
The embodiments disclosed herein are illustrative in all respects, and should not be construed as being limiting. Indeed, the above-described embodiments may be embodied in a number of ways. The above-described embodiments may be omitted, replaced, or modified in various ways without departing from the scope of the appended claims and the gist thereof.
Description of the reference numerals
W1: a first substrate; w2: a second substrate; t: superposing the substrates; 1: a joining system; 2: carrying in and carrying out; 3: a processing station; 4: an inspection station; 41: an engaging device; 70: a control device; 71: a control unit; 71 a: a measurement control unit; 71 b: a diagnosis control unit; 72: a storage unit; 72 a: light quantity initial information; 80: an inspection device; 400: a holding section; 410: a main body portion; 420: a support member; 460: a suction tube; 500: an image pickup unit; 510: a macro camera shooting part; 520: a microscopic imaging unit; 600: a lighting unit; 610: a macro lighting section; 620: a microscopic illumination unit; 700: a diagnosis unit; 710: an installation part; 720: a damping member.

Claims (9)

1. A self-diagnosis method of an inspection apparatus for inspecting a stacked substrate in which a first substrate and a second substrate are bonded to each other, the method comprising:
a step of performing arrangement for arranging the attenuation member between an illumination unit and an imaging unit by moving a holding unit, which holds an outer peripheral portion of the stacked substrate and is provided with a diagnostic unit having an attenuation member for attenuating light, the illumination unit being arranged above and below the holding unit and illuminating the stacked substrate held by the holding unit with light, the imaging unit being arranged above and below the holding unit at a position facing the illumination unit and imaging the stacked substrate held by the holding unit,
a step of irradiating light from the illumination unit at a set light amount after the step of arranging;
a light receiving step of receiving, after the irradiation step, light emitted from the illumination unit and transmitted through the attenuation member by using the imaging unit; and
and a step of determining an abnormality in the amount of light, after the step of receiving light, based on the amount of light received by the imaging unit, the abnormality in the amount of light emitted from the illumination unit.
2. The self-diagnosis method of an inspection apparatus according to claim 1,
in the step of determining the abnormality in the light quantity, a difference between an initial light receiving quantity, which is stored in advance as the light receiving quantity of the light received by the imaging unit after being irradiated from the illumination unit at the set light quantity and transmitted through the attenuation member, and the light receiving quantity of the light received by the imaging unit in the step of receiving the light is calculated, and when the difference is equal to or greater than a light quantity threshold value, it is determined that the light quantity of the light irradiated from the illumination unit is abnormal.
3. The self-diagnosis method of an examination apparatus according to claim 1 or 2,
the step of determining the abnormality of the light quantity further includes a step of changing the set light quantity when the light quantity of the light emitted from the illumination unit is determined to be abnormal.
4. The self-diagnosis method of an inspection apparatus according to any one of claims 1 to 3,
the attenuating element is provided with a calibration mark,
the self-diagnosis method of the inspection apparatus further includes:
a step of performing imaging, after the step of performing irradiation, of imaging the calibration mark using the imaging unit; and
and determining the inclination of the optical axis of the illumination unit based on the calibration mark captured by the imaging unit after the imaging step.
5. An inspection apparatus for inspecting a stacked substrate formed by bonding a first substrate and a second substrate, the inspection apparatus comprising:
a holding portion that holds an outer peripheral portion of the stacked substrate;
an illumination unit disposed above or below the holding unit, for irradiating the stacked substrate held by the holding unit with light;
an imaging unit that is disposed at a position facing the illumination unit on the other of the upper and lower sides of the holding unit, and that images the stacked substrate held by the holding unit;
a moving mechanism that moves the holding portion; and
and a diagnosis unit provided in the holding unit and having an attenuation member for attenuating light emitted from the illumination unit.
6. The inspection device of claim 5,
the attenuating member includes silicon.
7. The inspection device of claim 6,
the attenuating means includes:
the silicon;
glass laminated to the silicon; and
an alignment mark formed on the glass.
8. The inspection device of any one of claims 5 to 7,
the holding portion includes:
a main body portion having an opening with a diameter larger than that of the stacked substrate; and
a plurality of support members provided on the main body and extending toward the center of the opening, the plurality of support members supporting an outer peripheral portion of the stacked substrate at distal end portions thereof,
the diagnostic unit is disposed between two adjacent support members.
9. The inspection apparatus of claim 8,
the diagnosis unit includes:
a mounting portion provided to the holding portion and extending toward a center of the opening; and
the damping member is mounted on the front end of the mounting part,
wherein the damping member is disposed at a position exposed from the stacked substrate when viewed from a plane in which the inspection apparatus is viewed in a direction perpendicular to a plate surface of the stacked substrate.
CN202080059026.7A 2019-08-29 2020-08-17 Self-diagnosis method for inspection apparatus and inspection apparatus Pending CN114258482A (en)

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Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63122903A (en) * 1986-11-12 1988-05-26 Sekisui Jushi Co Ltd Length measuring device
JPS63122908A (en) * 1986-11-13 1988-05-26 Toshiba Corp Surface inspection apparatus
JP3158969B2 (en) * 1995-06-09 2001-04-23 東レ株式会社 Film defect detecting apparatus and film manufacturing method
JP2001074669A (en) * 1999-09-07 2001-03-23 Nippon Columbia Co Ltd Apparatus for inspecting optical disk defect
WO2003050514A2 (en) * 2001-12-12 2003-06-19 Therma-Wave, Inc. Position-dependent optical metrology calibration
JP2004191324A (en) * 2002-12-13 2004-07-08 Ricoh Co Ltd Pin-hole inspecting device
JP2010008336A (en) * 2008-06-30 2010-01-14 Shin Etsu Handotai Co Ltd Sample wafer for calibration of image inspection device, and calibration method of image inspection device
KR20110055788A (en) * 2009-11-20 2011-05-26 재단법인 서울테크노파크 Inspection method for bonded wafer using laser
JP5421825B2 (en) 2010-03-09 2014-02-19 東京エレクトロン株式会社 Joining system, joining method, program, and computer storage medium
JP6004517B2 (en) * 2011-04-19 2016-10-12 芝浦メカトロニクス株式会社 Substrate inspection apparatus, substrate inspection method, and adjustment method of the substrate inspection apparatus
KR101264099B1 (en) * 2011-07-07 2013-05-14 한국전기연구원 Apparatus and method for inspecting void of multi-junction semiconductor
JP5674731B2 (en) * 2012-08-23 2015-02-25 東京エレクトロン株式会社 Inspection apparatus, joining system, inspection method, program, and computer storage medium
JP6848929B2 (en) * 2018-04-17 2021-03-24 豊田合成株式会社 Storage box
KR102629523B1 (en) * 2018-04-23 2024-01-25 도쿄엘렉트론가부시키가이샤 Measuring methods and measuring devices
US10215695B1 (en) * 2018-04-25 2019-02-26 Globalfoundries Inc. Inspection system and method for detecting defects at a materials interface

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