CN1141509A - 阈值电压稳定的场效应晶体管及其制造方法 - Google Patents

阈值电压稳定的场效应晶体管及其制造方法 Download PDF

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Publication number
CN1141509A
CN1141509A CN96108193A CN96108193A CN1141509A CN 1141509 A CN1141509 A CN 1141509A CN 96108193 A CN96108193 A CN 96108193A CN 96108193 A CN96108193 A CN 96108193A CN 1141509 A CN1141509 A CN 1141509A
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CN
China
Prior art keywords
region
threshold voltage
injection region
source
concentration
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Pending
Application number
CN96108193A
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English (en)
Chinese (zh)
Inventor
韦达·伊尔德勒姆
米切尔·H·卡内施洛
迪安·道
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NXP USA Inc
Original Assignee
Motorola Inc
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Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of CN1141509A publication Critical patent/CN1141509A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN96108193A 1995-07-07 1996-07-02 阈值电压稳定的场效应晶体管及其制造方法 Pending CN1141509A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/499,624 US5675166A (en) 1995-07-07 1995-07-07 FET with stable threshold voltage and method of manufacturing the same
US499,624 1995-07-07

Publications (1)

Publication Number Publication Date
CN1141509A true CN1141509A (zh) 1997-01-29

Family

ID=23986023

Family Applications (1)

Application Number Title Priority Date Filing Date
CN96108193A Pending CN1141509A (zh) 1995-07-07 1996-07-02 阈值电压稳定的场效应晶体管及其制造方法

Country Status (6)

Country Link
US (2) US5675166A (enExample)
EP (1) EP0752722B1 (enExample)
JP (1) JPH0936367A (enExample)
CN (1) CN1141509A (enExample)
DE (1) DE69624174T2 (enExample)
TW (1) TW303520B (enExample)

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CN100466287C (zh) * 2004-12-13 2009-03-04 国际商业机器公司 侧壁半导体晶体管及其制造方法
CN113871451A (zh) * 2021-09-24 2021-12-31 华虹半导体(无锡)有限公司 Dmos器件及其形成方法

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DE19812945A1 (de) * 1998-03-24 1999-09-30 Siemens Ag Halbleiterbauelement und Verfahren zu dessen Herstellung
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US6198131B1 (en) * 1998-12-07 2001-03-06 United Microelectronics Corp. High-voltage metal-oxide semiconductor
FR2794898B1 (fr) 1999-06-11 2001-09-14 France Telecom Dispositif semi-conducteur a tension de seuil compensee et procede de fabrication
FR2796204B1 (fr) * 1999-07-07 2003-08-08 St Microelectronics Sa Transistor mosfet a canal court
US6168999B1 (en) * 1999-09-07 2001-01-02 Advanced Micro Devices, Inc. Method for fabricating high-performance submicron mosfet with lateral asymmetric channel and a lightly doped drain
US6426278B1 (en) * 1999-10-07 2002-07-30 International Business Machines Corporation Projection gas immersion laser dopant process (PGILD) fabrication of diffusion halos
US7192836B1 (en) * 1999-11-29 2007-03-20 Advanced Micro Devices, Inc. Method and system for providing halo implant to a semiconductor device with minimal impact to the junction capacitance
US6624035B1 (en) * 2000-03-13 2003-09-23 Advanced Micro Devices, Inc. Method of forming a hard mask for halo implants
US6433372B1 (en) 2000-03-17 2002-08-13 International Business Machines Corporation Dense multi-gated device design
US6344405B1 (en) * 2000-04-11 2002-02-05 Philips Electronics North America Corp. Transistors having optimized source-drain structures and methods for making the same
JP3831598B2 (ja) * 2000-10-19 2006-10-11 三洋電機株式会社 半導体装置とその製造方法
US6509241B2 (en) 2000-12-12 2003-01-21 International Business Machines Corporation Process for fabricating an MOS device having highly-localized halo regions
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KR100953332B1 (ko) * 2002-12-31 2010-04-20 동부일렉트로닉스 주식회사 반도체 장치의 제조 방법
KR100981674B1 (ko) * 2003-04-29 2010-09-13 매그나칩 반도체 유한회사 반도체 소자 및 그의 제조방법
KR100487927B1 (ko) * 2003-07-21 2005-05-09 주식회사 하이닉스반도체 마그네틱 램의 형성방법
US7071069B2 (en) * 2003-12-22 2006-07-04 Chartered Semiconductor Manufacturing, Ltd Shallow amorphizing implant for gettering of deep secondary end of range defects
KR100574172B1 (ko) * 2003-12-23 2006-04-27 동부일렉트로닉스 주식회사 반도체 소자의 제조방법
KR100552808B1 (ko) * 2003-12-24 2006-02-20 동부아남반도체 주식회사 확산 소스/드레인 구조를 갖는 반도체 소자 및 그 제조 방법
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US7282406B2 (en) * 2006-03-06 2007-10-16 Semiconductor Companents Industries, L.L.C. Method of forming an MOS transistor and structure therefor
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US8354718B2 (en) * 2007-05-22 2013-01-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device including an arrangement for suppressing short channel effects
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KR101700572B1 (ko) * 2010-10-20 2017-02-01 삼성전자주식회사 저농도 채널 불순물 영역을 갖는 반도체 소자
KR101714613B1 (ko) * 2010-10-28 2017-03-10 삼성전자 주식회사 반도체 소자 및 이의 제조 방법
JP2014036082A (ja) * 2012-08-08 2014-02-24 Renesas Electronics Corp 半導体装置およびその製造方法
CN104078360B (zh) * 2013-03-28 2016-11-23 中芯国际集成电路制造(上海)有限公司 Mos晶体管的形成方法
US11488871B2 (en) * 2013-09-24 2022-11-01 Samar K. Saha Transistor structure with multiple halo implants having epitaxial layer over semiconductor-on-insulator substrate
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US9484417B1 (en) * 2015-07-22 2016-11-01 Globalfoundries Inc. Methods of forming doped transition regions of transistor structures
CN113410139B (zh) * 2020-07-02 2025-06-03 台积电(中国)有限公司 半导体结构及其形成方法

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CN100466287C (zh) * 2004-12-13 2009-03-04 国际商业机器公司 侧壁半导体晶体管及其制造方法
US7696025B2 (en) 2004-12-13 2010-04-13 International Business Machines Corporation Sidewall semiconductor transistors
CN113871451A (zh) * 2021-09-24 2021-12-31 华虹半导体(无锡)有限公司 Dmos器件及其形成方法

Also Published As

Publication number Publication date
EP0752722A3 (en) 1998-06-10
DE69624174D1 (de) 2002-11-14
DE69624174T2 (de) 2003-02-13
TW303520B (enExample) 1997-04-21
US6017798A (en) 2000-01-25
JPH0936367A (ja) 1997-02-07
EP0752722A2 (en) 1997-01-08
US5675166A (en) 1997-10-07
EP0752722B1 (en) 2002-10-09

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Effective date: 20050304

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Applicant after: FreeScale Semiconductor

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Applicant before: Motorola, Inc.

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