CN114123998A - 可变增益功率放大器 - Google Patents

可变增益功率放大器 Download PDF

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Publication number
CN114123998A
CN114123998A CN202111519675.3A CN202111519675A CN114123998A CN 114123998 A CN114123998 A CN 114123998A CN 202111519675 A CN202111519675 A CN 202111519675A CN 114123998 A CN114123998 A CN 114123998A
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CN
China
Prior art keywords
output
coupled
node
signal
gain control
Prior art date
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Pending
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CN202111519675.3A
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English (en)
Chinese (zh)
Inventor
S·查克拉博蒂
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Texas Instruments Inc
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Texas Instruments Inc
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1212Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1228Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/1262Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements
    • H03B5/1265Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements switched capacitors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0277Selecting one or more amplifiers from a plurality of amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/213Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45197Pl types
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G1/00Details of arrangements for controlling amplification
    • H03G1/0005Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G3/00Gain control in amplifiers or frequency changers
    • H03G3/004Control by varying the supply voltage
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G3/00Gain control in amplifiers or frequency changers
    • H03G3/20Automatic control
    • H03G3/30Automatic control in amplifiers having semiconductor devices
    • H03G3/3036Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H03G3/3042Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02Transmitters
    • H04B1/04Circuits
    • H04B2001/0408Circuits with power amplifiers
    • H04B2001/0416Circuits with power amplifiers having gain or transmission power control

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Control Of Amplification And Gain Control (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
CN202111519675.3A 2015-06-30 2016-06-30 可变增益功率放大器 Pending CN114123998A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/755,462 2015-06-30
US14/755,462 US9685907B2 (en) 2015-06-30 2015-06-30 Variable gain power amplifiers
CN201680038816.0A CN107710601B (zh) 2015-06-30 2016-06-30 可变增益功率放大器

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201680038816.0A Division CN107710601B (zh) 2015-06-30 2016-06-30 可变增益功率放大器

Publications (1)

Publication Number Publication Date
CN114123998A true CN114123998A (zh) 2022-03-01

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CN202111519675.3A Pending CN114123998A (zh) 2015-06-30 2016-06-30 可变增益功率放大器
CN201680038816.0A Active CN107710601B (zh) 2015-06-30 2016-06-30 可变增益功率放大器

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Country Status (4)

Country Link
US (6) US9685907B2 (enExample)
JP (4) JP6773698B2 (enExample)
CN (2) CN114123998A (enExample)
WO (1) WO2017004459A1 (enExample)

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TWI619354B (zh) * 2017-01-26 2018-03-21 瑞昱半導體股份有限公司 射頻收發裝置及其射頻發射機
US11931525B2 (en) 2018-10-04 2024-03-19 Edwards Lifesciences Corporation Stabilizer for a delivery system
CN111756339B (zh) * 2018-12-07 2025-03-14 曹秀妹 一种可切换工作功率的双模式功率放大器及模式切换方法
CN114586280B (zh) 2019-10-31 2025-08-08 华为技术有限公司 一种振荡器电路
CN113517870B (zh) * 2021-08-23 2025-01-07 苏州矽典微智能科技有限公司 可变增益放大器及其应用
CN115882800B (zh) * 2021-09-29 2025-10-28 瑞昱半导体股份有限公司 具有适应机制的信号增益调整电路及方法
TWI790867B (zh) 2021-12-21 2023-01-21 財團法人工業技術研究院 壓控振盪裝置
TWI826096B (zh) * 2022-11-03 2023-12-11 財團法人工業技術研究院 開關電路以及提供開關電路的方法
TWI848641B (zh) * 2023-03-29 2024-07-11 國立彰化師範大學 寬頻阻抗匹配之放大器電路

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Patent Citations (4)

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EP0899866A1 (en) * 1997-08-27 1999-03-03 Lsi Logic Corporation Reactive tuned oscillator using standard CMOS technology
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US12119789B2 (en) 2024-10-15
US20170288796A1 (en) 2017-10-05
US11258404B2 (en) 2022-02-22
US9685907B2 (en) 2017-06-20
US20200112286A1 (en) 2020-04-09
JP2024111289A (ja) 2024-08-16
JP2022009471A (ja) 2022-01-14
US20210013833A1 (en) 2021-01-14
CN107710601A (zh) 2018-02-16
JP6978714B2 (ja) 2021-12-08
JP7514051B2 (ja) 2024-07-10
US11705863B2 (en) 2023-07-18
WO2017004459A1 (en) 2017-01-05
CN107710601B (zh) 2021-12-31
US20220140787A1 (en) 2022-05-05
JP6773698B2 (ja) 2020-10-21
JP2018519760A (ja) 2018-07-19
US20170005616A1 (en) 2017-01-05
US10536113B2 (en) 2020-01-14
US10797646B2 (en) 2020-10-06
US20230318529A1 (en) 2023-10-05
JP2021013174A (ja) 2021-02-04

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