CN113950752A - 用于神经形态切换的双氧化物模拟开关 - Google Patents
用于神经形态切换的双氧化物模拟开关 Download PDFInfo
- Publication number
- CN113950752A CN113950752A CN202080042745.8A CN202080042745A CN113950752A CN 113950752 A CN113950752 A CN 113950752A CN 202080042745 A CN202080042745 A CN 202080042745A CN 113950752 A CN113950752 A CN 113950752A
- Authority
- CN
- China
- Prior art keywords
- oxide
- neuromorphic
- layer
- silicon
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims abstract description 142
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 239000007772 electrode material Substances 0.000 claims abstract description 36
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims description 55
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 11
- 229910044991 metal oxide Inorganic materials 0.000 claims description 11
- 150000004706 metal oxides Chemical class 0.000 claims description 11
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 10
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 10
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 229910003440 dysprosium oxide Inorganic materials 0.000 claims description 5
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(iii) oxide Chemical compound O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 claims description 5
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 5
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 5
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 5
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical compound O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 claims description 5
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 5
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- 239000000395 magnesium oxide Substances 0.000 claims description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 238000000151 deposition Methods 0.000 abstract description 10
- 238000005516 engineering process Methods 0.000 description 42
- 238000012545 processing Methods 0.000 description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 15
- 229910052760 oxygen Inorganic materials 0.000 description 15
- 239000001301 oxygen Substances 0.000 description 15
- 230000008569 process Effects 0.000 description 15
- 238000003860 storage Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000007704 transition Effects 0.000 description 7
- 230000008901 benefit Effects 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 229910052752 metalloid Inorganic materials 0.000 description 4
- 150000002738 metalloids Chemical class 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052723 transition metal Inorganic materials 0.000 description 3
- 150000003624 transition metals Chemical class 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- -1 and oxides Chemical class 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012432 intermediate storage Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910001848 post-transition metal Inorganic materials 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000010977 unit operation Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N3/00—Computing arrangements based on biological models
- G06N3/02—Neural networks
- G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
- G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
- G06N3/065—Analogue means
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biomedical Technology (AREA)
- Biophysics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Mathematical Physics (AREA)
- Data Mining & Analysis (AREA)
- Molecular Biology (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Evolutionary Computation (AREA)
- Software Systems (AREA)
- Computational Linguistics (AREA)
- Artificial Intelligence (AREA)
- Neurology (AREA)
- Semiconductor Memories (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962860313P | 2019-06-12 | 2019-06-12 | |
| US62/860,313 | 2019-06-12 | ||
| PCT/US2020/034500 WO2020251747A1 (fr) | 2019-06-12 | 2020-05-26 | Commutateur analogique à double oxyde pour commutation neuromorphique |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113950752A true CN113950752A (zh) | 2022-01-18 |
Family
ID=73746527
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080042745.8A Pending CN113950752A (zh) | 2019-06-12 | 2020-05-26 | 用于神经形态切换的双氧化物模拟开关 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US11616195B2 (fr) |
| EP (1) | EP3984074A4 (fr) |
| JP (1) | JP7359876B2 (fr) |
| CN (1) | CN113950752A (fr) |
| TW (1) | TWI738378B (fr) |
| WO (1) | WO2020251747A1 (fr) |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013162086A (ja) * | 2012-02-08 | 2013-08-19 | Toshiba Corp | 不揮発性抵抗変化素子 |
| WO2013137262A1 (fr) * | 2012-03-14 | 2013-09-19 | 国立大学法人東京工業大学 | Mémoire à changement de résistance |
| JP5696260B2 (ja) * | 2012-09-05 | 2015-04-08 | 株式会社アルバック | 抵抗変化素子及びその製造方法 |
| JP5572749B2 (ja) | 2012-09-26 | 2014-08-13 | パナソニック株式会社 | 不揮発性記憶素子及びその製造方法 |
| KR101588980B1 (ko) | 2014-12-04 | 2016-01-27 | 포항공과대학교 산학협력단 | 뉴로모픽 시스템 응용을 위한 시냅스 소자 및 그 제조방법 |
| US10049732B2 (en) * | 2015-02-24 | 2018-08-14 | Hewlett Packard Enterprise Development Lp | Determining a state of memristors in a crossbar array |
| JP6430306B2 (ja) * | 2015-03-19 | 2018-11-28 | 東芝メモリ株式会社 | 不揮発性記憶装置 |
| US9767407B2 (en) | 2015-09-18 | 2017-09-19 | Samsung Electronics Co., Ltd. | Weighting device, neural network, and operating method of the weighting device |
| US10381557B2 (en) * | 2015-12-14 | 2019-08-13 | Shih-Yuan Wang | Resistive random-access memory with protected switching layer |
| KR101811108B1 (ko) | 2015-12-16 | 2017-12-26 | 포항공과대학교 산학협력단 | 부도체-도체 전이현상을 이용한 뉴런 소자를 포함한 고집적 뉴로모픽 시스템 및 고집적 뉴로모픽 회로 |
| US10062845B1 (en) * | 2016-05-13 | 2018-08-28 | Crossbar, Inc. | Flatness of memory cell surfaces |
| US9887351B1 (en) * | 2016-09-30 | 2018-02-06 | International Business Machines Corporation | Multivalent oxide cap for analog switching resistive memory |
| KR102143440B1 (ko) | 2017-01-20 | 2020-08-11 | 한양대학교 산학협력단 | 3차원 뉴로모픽 소자 및 그 제조방법 |
| JP2018160547A (ja) * | 2017-03-22 | 2018-10-11 | 東芝メモリ株式会社 | 記憶装置 |
| KR102369715B1 (ko) | 2017-06-12 | 2022-03-03 | 삼성전자주식회사 | 이차원 물질을 포함하는 비휘발성 메모리 소자 및 이를 포함하는 장치 |
| US11133492B2 (en) | 2017-11-30 | 2021-09-28 | International Business Machines Corporation | Battery structure with stable voltage for neuromorphic computing |
| KR101940669B1 (ko) * | 2017-12-07 | 2019-01-21 | 재단법인 대구경북과학기술원 | 인공 시냅스 소자 및 이의 제조방법 |
-
2020
- 2020-05-26 US US16/883,009 patent/US11616195B2/en active Active
- 2020-05-26 EP EP20821800.8A patent/EP3984074A4/fr active Pending
- 2020-05-26 CN CN202080042745.8A patent/CN113950752A/zh active Pending
- 2020-05-26 WO PCT/US2020/034500 patent/WO2020251747A1/fr unknown
- 2020-05-26 JP JP2021573806A patent/JP7359876B2/ja active Active
- 2020-06-10 TW TW109119472A patent/TWI738378B/zh active
-
2023
- 2023-03-28 US US18/190,971 patent/US20230232727A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR20220018055A (ko) | 2022-02-14 |
| JP7359876B2 (ja) | 2023-10-11 |
| US20230232727A1 (en) | 2023-07-20 |
| TW202107564A (zh) | 2021-02-16 |
| EP3984074A4 (fr) | 2023-08-09 |
| WO2020251747A1 (fr) | 2020-12-17 |
| US11616195B2 (en) | 2023-03-28 |
| TWI738378B (zh) | 2021-09-01 |
| EP3984074A1 (fr) | 2022-04-20 |
| JP2022536917A (ja) | 2022-08-22 |
| US20200395538A1 (en) | 2020-12-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8541765B2 (en) | Resistance variable memory cell structures and methods | |
| US8409914B2 (en) | Method for fabricating resistive memory device | |
| KR101851101B1 (ko) | 개선된 형성 전압 특성을 갖는 저항성 랜덤 액세스 메모리 (ｒｒａｍ) 및 이의 제조 방법 | |
| JP5783961B2 (ja) | 不揮発性記憶装置 | |
| US8916847B2 (en) | Variable resistance memory device and method for fabricating the same | |
| CN104979470A (zh) | Rram单元的底电极的形成 | |
| US20100163819A1 (en) | Resistive memory device and method for fabricating the same | |
| US8895390B2 (en) | Memory device with a textured lowered electrode | |
| US8350244B2 (en) | Variable resistance device, method for manufacturing variable resistance device, and semiconductor storage device using variable resistance device | |
| WO2017044166A1 (fr) | Mémoire vive résistive tridimensionnelle contenant des éléments de mémoire auto-alignés | |
| US11283014B2 (en) | RRAM crossbar array circuits with specialized interface layers for low current operation | |
| US11258009B2 (en) | Switching atomic transistor and method for operating same | |
| JP2017055082A (ja) | 不揮発性記憶装置の製造方法 | |
| US8345463B2 (en) | Resistive memory device and method for fabricating the same | |
| US20210020834A1 (en) | Memory device and a method for forming the memory device | |
| US20160315256A1 (en) | V-shape resistive memory element | |
| US11991938B2 (en) | Memory devices and methods of forming memory devices | |
| CN113950752A (zh) | 用于神经形态切换的双氧化物模拟开关 | |
| KR102722302B1 (ko) | 뉴로모픽 스위칭을 위한 이중 산화물 아날로그 스위치 | |
| US9246084B2 (en) | RRAM cell including V-shaped structure | |
| CN116157003A (zh) | 电阻式随机存取存储元件、存储器件及其制备方法 | |
| KR20110020886A (ko) | 저항성 메모리 소자의 제조 방법 | |
| KR20110035774A (ko) | 상변화 메모리 소자 및 그 제조 방법 | |
| CN103915562A (zh) | 半导体结构及其制造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |