CN113950748A - 具有隐埋p型层的iii族氮化物高电子迁移率晶体管及其制造方法 - Google Patents

具有隐埋p型层的iii族氮化物高电子迁移率晶体管及其制造方法 Download PDF

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CN113950748A
CN113950748A CN202080025271.6A CN202080025271A CN113950748A CN 113950748 A CN113950748 A CN 113950748A CN 202080025271 A CN202080025271 A CN 202080025271A CN 113950748 A CN113950748 A CN 113950748A
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layer
type material
transistor
aspects
group iii
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CN202080025271.6A
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Chinese (zh)
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萨普撒里希·斯里拉姆
托马斯·史密斯
亚历山大·苏沃罗夫
克里斯特·哈林
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Wofu Semiconductor Co ltd
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Wofu Semiconductor Co ltd
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Priority claimed from US16/260,095 external-priority patent/US10840334B2/en
Priority claimed from US16/376,596 external-priority patent/US10892356B2/en
Application filed by Wofu Semiconductor Co ltd filed Critical Wofu Semiconductor Co ltd
Publication of CN113950748A publication Critical patent/CN113950748A/zh
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
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    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H01L29/8124—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with multiple gate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
CN202080025271.6A 2019-01-28 2020-01-28 具有隐埋p型层的iii族氮化物高电子迁移率晶体管及其制造方法 Pending CN113950748A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US16/260,095 US10840334B2 (en) 2016-06-24 2019-01-28 Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
US16/260,095 2019-01-28
US16/376,596 2019-04-05
US16/376,596 US10892356B2 (en) 2016-06-24 2019-04-05 Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same
PCT/US2020/015331 WO2020159934A1 (en) 2019-01-28 2020-01-28 Group iii-nitride high-electron mobility transistors with buried p-type layers and process for making the same

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CN113950748A true CN113950748A (zh) 2022-01-18

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EP (1) EP3918636A4 (ja)
JP (2) JP7248804B2 (ja)
KR (3) KR20210119511A (ja)
CN (1) CN113950748A (ja)
WO (1) WO2020159934A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116457946A (zh) * 2021-08-03 2023-07-18 美国亚德诺半导体公司 氮化镓再生长中的杂质还原技术

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1717811A (zh) * 2002-11-26 2006-01-04 克里公司 源极区下面具有隐埋p型层的晶体管及其制造方法
CN103178108A (zh) * 2011-12-20 2013-06-26 英飞凌科技奥地利有限公司 具有掩埋式场板的化合物半导体器件
CN105405877A (zh) * 2014-09-05 2016-03-16 英飞凌科技奥地利有限公司 具有埋置场板的高电子迁移率晶体管
JP2017059786A (ja) * 2015-09-18 2017-03-23 パナソニックＩｐマネジメント株式会社 半導体装置
WO2017223403A1 (en) * 2016-06-24 2017-12-28 Cree, Inc. Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5758132B2 (ja) * 2011-01-26 2015-08-05 株式会社東芝 半導体素子
JP2012231002A (ja) * 2011-04-26 2012-11-22 Advanced Power Device Research Association 半導体装置
JP2014520405A (ja) * 2011-06-20 2014-08-21 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 電流アパーチャ垂直電子トランジスタ
JP5653326B2 (ja) * 2011-09-12 2015-01-14 株式会社東芝 窒化物半導体装置
US10290566B2 (en) * 2014-09-23 2019-05-14 Infineon Technologies Austria Ag Electronic component
JP6677598B2 (ja) * 2016-07-25 2020-04-08 ルネサスエレクトロニクス株式会社 半導体装置
JP6996241B2 (ja) * 2017-11-13 2022-01-17 富士通株式会社 化合物半導体装置及びその製造方法、電源装置、高周波増幅器

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1717811A (zh) * 2002-11-26 2006-01-04 克里公司 源极区下面具有隐埋p型层的晶体管及其制造方法
CN103178108A (zh) * 2011-12-20 2013-06-26 英飞凌科技奥地利有限公司 具有掩埋式场板的化合物半导体器件
CN105405877A (zh) * 2014-09-05 2016-03-16 英飞凌科技奥地利有限公司 具有埋置场板的高电子迁移率晶体管
JP2017059786A (ja) * 2015-09-18 2017-03-23 パナソニックＩｐマネジメント株式会社 半導体装置
WO2017223403A1 (en) * 2016-06-24 2017-12-28 Cree, Inc. Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates

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KR102626266B1 (ko) 2024-01-16
JP7248804B2 (ja) 2023-03-29
KR20230025527A (ko) 2023-02-21
KR20240010555A (ko) 2024-01-23
EP3918636A1 (en) 2021-12-08
EP3918636A4 (en) 2023-03-08
JP2022519825A (ja) 2022-03-25
WO2020159934A1 (en) 2020-08-06
KR20210119511A (ko) 2021-10-05
JP2023041688A (ja) 2023-03-24

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