CN113948416B - 半导体器件的制造方法、衬底处理装置及记录介质 - Google Patents

半导体器件的制造方法、衬底处理装置及记录介质 Download PDF

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Publication number
CN113948416B
CN113948416B CN202110634870.4A CN202110634870A CN113948416B CN 113948416 B CN113948416 B CN 113948416B CN 202110634870 A CN202110634870 A CN 202110634870A CN 113948416 B CN113948416 B CN 113948416B
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China
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gas
film
substrate
modified layer
etching
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Chinese (zh)
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CN113948416A (zh
Inventor
中谷公彦
上野亮太
出贝求
中川崇
桥本良知
广濑义朗
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Kokusai Electric Corp
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Kokusai Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
CN202110634870.4A 2020-07-16 2021-06-07 半导体器件的制造方法、衬底处理装置及记录介质 Active CN113948416B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202510170524.3A CN120033118A (zh) 2020-07-16 2021-06-07 处理方法、半导体器件的制造方法、处理装置及程序制品

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JP2020122454A JP7174016B2 (ja) 2020-07-16 2020-07-16 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
JP2020-122454 2020-07-16

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CN113948416B true CN113948416B (zh) 2025-03-04

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CN202110634870.4A Active CN113948416B (zh) 2020-07-16 2021-06-07 半导体器件的制造方法、衬底处理装置及记录介质

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US (2) US11699593B2 (enExample)
JP (2) JP7174016B2 (enExample)
KR (2) KR102750871B1 (enExample)
CN (2) CN120033118A (enExample)
TW (2) TWI787832B (enExample)

Families Citing this family (10)

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WO2022230862A1 (ja) 2021-04-28 2022-11-03 セントラル硝子株式会社 表面処理方法、ドライエッチング方法、クリーニング方法、半導体デバイスの製造方法及びエッチング装置
JP7313402B2 (ja) * 2021-06-29 2023-07-24 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置、プログラム及びエッチング方法
CN117157734A (zh) * 2022-03-29 2023-12-01 株式会社国际电气 衬底处理方法、半导体器件的制造方法、程序及衬底处理装置
JP2023179001A (ja) * 2022-06-07 2023-12-19 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2025519263A (ja) * 2022-06-14 2025-06-24 レール・リキード－ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 高アスペクト比プラズマエッチング中に側壁パッシベーション層及びそれを形成する方法
JP7561795B2 (ja) * 2022-06-17 2024-10-04 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
JP2024078128A (ja) * 2022-11-29 2024-06-10 東京エレクトロン株式会社 処理方法及び処理システム
TWI895928B (zh) * 2023-03-22 2025-09-01 日商國際電氣股份有限公司 蝕刻方法、半導體裝置之製造方法、程式及處理裝置
JP2025040215A (ja) 2023-09-11 2025-03-24 株式会社Kokusai Electric 処理方法、半導体装置の製造方法、処理装置、およびプログラム
WO2025253805A1 (ja) * 2024-06-06 2025-12-11 東京エレクトロン株式会社 基板処理方法及び基板処理装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016129227A (ja) * 2015-01-05 2016-07-14 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 酸化物層のエッチング方法及びエッチング装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4395896B2 (ja) * 1998-03-10 2010-01-13 ソニー株式会社 半導体装置の製造方法
JP4921206B2 (ja) * 2006-03-02 2012-04-25 キヤノン株式会社 液晶パネルの製造方法
US7416989B1 (en) 2006-06-30 2008-08-26 Novellus Systems, Inc. Adsorption based material removal process
JP4968861B2 (ja) * 2009-03-19 2012-07-04 東京エレクトロン株式会社 基板のエッチング方法及びシステム
JP5036849B2 (ja) 2009-08-27 2012-09-26 株式会社日立国際電気 半導体装置の製造方法、クリーニング方法および基板処理装置
JP6022166B2 (ja) * 2011-02-28 2016-11-09 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP6035161B2 (ja) * 2012-03-21 2016-11-30 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
JP6284285B2 (ja) * 2015-01-07 2018-02-28 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
WO2016160778A1 (en) * 2015-03-30 2016-10-06 Tokyo Electron Limited Method for atomic layer etching
US9953843B2 (en) * 2016-02-05 2018-04-24 Lam Research Corporation Chamber for patterning non-volatile metals
US10256108B2 (en) * 2016-03-01 2019-04-09 Lam Research Corporation Atomic layer etching of AL2O3 using a combination of plasma and vapor treatments
US10283369B2 (en) 2016-08-10 2019-05-07 Tokyo Electron Limited Atomic layer etching using a boron-containing gas and hydrogen fluoride gas
US10280519B2 (en) * 2016-12-09 2019-05-07 Asm Ip Holding B.V. Thermal atomic layer etching processes
JP6929148B2 (ja) 2017-06-30 2021-09-01 東京エレクトロン株式会社 エッチング方法およびエッチング装置
JP6843087B2 (ja) 2018-03-12 2021-03-17 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
JP7133975B2 (ja) 2018-05-11 2022-09-09 東京エレクトロン株式会社 エッチング方法およびエッチング装置
KR102871693B1 (ko) * 2018-07-09 2025-10-15 램 리써치 코포레이션 전자 여기 원자 층 에칭
KR102637397B1 (ko) 2018-07-17 2024-02-16 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 방법, 기판 처리 장치, 프로그램 및 반도체 장치의 제조 방법
JP7114554B2 (ja) 2019-11-22 2022-08-08 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016129227A (ja) * 2015-01-05 2016-07-14 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 酸化物層のエッチング方法及びエッチング装置

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Publication number Publication date
US20230307246A1 (en) 2023-09-28
CN120033118A (zh) 2025-05-23
US20220020598A1 (en) 2022-01-20
TWI841056B (zh) 2024-05-01
US12381091B2 (en) 2025-08-05
TWI787832B (zh) 2022-12-21
JP7614159B2 (ja) 2025-01-15
KR20220009897A (ko) 2022-01-25
JP7174016B2 (ja) 2022-11-17
KR102750871B1 (ko) 2025-01-09
KR20250011979A (ko) 2025-01-22
JP2022018973A (ja) 2022-01-27
TW202316496A (zh) 2023-04-16
TW202205383A (zh) 2022-02-01
CN113948416A (zh) 2022-01-18
US11699593B2 (en) 2023-07-11
JP2022190136A (ja) 2022-12-22

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