CN113661493A - 光学指纹识别装置和电子设备 - Google Patents
光学指纹识别装置和电子设备 Download PDFInfo
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- CN113661493A CN113661493A CN201980095272.5A CN201980095272A CN113661493A CN 113661493 A CN113661493 A CN 113661493A CN 201980095272 A CN201980095272 A CN 201980095272A CN 113661493 A CN113661493 A CN 113661493A
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- H01L24/10—Bump connectors ; Manufacturing methods related thereto
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Abstract
一种光学指纹识别装置(20)和电子设备(10),能够提升光学指纹识别装置(20)的性能。该光学指纹识别装置(20)包括:光检测阵列(400);滤波层(500),设置于所述光检测阵列(400)上方,用于滤掉非目标波段的光信号,透过目标波段的光信号,且所述滤波层(500)与所述光检测阵列(400)一起集成在光电传感器芯片中;第一阻光层(300),形成于所述滤波层(500)上方,其中,所述第一阻光层(300)设置有多个通光小孔(310);第一微透镜阵列(200),设置于所述第一阻光层(300)上方;其中,所述第一微透镜阵列(200)用于将光信号汇聚至所述第一阻光层(300)的多个通光小孔(310),所述光信号通过所述第一阻光层(300)的多个通光小孔(310)传输至所述光检测阵列(400)。
Description
PCT国内申请,说明书已公开。
Claims (24)
- PCT国内申请,权利要求书已公开。
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Families Citing this family (66)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201937401A (zh) * | 2018-02-21 | 2019-09-16 | 申雲洪 | 光學指紋感應模組 |
CN212569823U (zh) | 2018-05-07 | 2021-02-19 | 光波触控有限公司 | 光学传感器系统及含有该系统的图像识别设备和电子设备 |
CN209640880U (zh) | 2019-04-10 | 2019-11-15 | 深圳市汇顶科技股份有限公司 | 光学指纹识别装置和电子设备 |
KR20200137081A (ko) * | 2019-05-28 | 2020-12-09 | 삼성디스플레이 주식회사 | 지문 센서 및 이를 포함하는 표시 장치 |
CN210295117U (zh) * | 2019-06-05 | 2020-04-10 | 深圳市汇顶科技股份有限公司 | 指纹芯片和电子设备 |
CN111247524B (zh) * | 2019-06-05 | 2023-08-22 | 深圳市汇顶科技股份有限公司 | 光学指纹装置、制作方法和电子设备 |
CN110286717B (zh) * | 2019-06-24 | 2021-07-02 | Oppo广东移动通信有限公司 | 显示装置、电子设备及图像获取方法 |
CN112151572B (zh) * | 2019-06-28 | 2023-06-23 | 云谷(固安)科技有限公司 | 指纹识别显示器件及其制备方法、指纹识别显示装置 |
WO2021007730A1 (zh) * | 2019-07-12 | 2021-01-21 | 深圳市汇顶科技股份有限公司 | 指纹检测装置和电子设备 |
CN113239856B (zh) | 2019-07-12 | 2023-08-22 | 深圳市汇顶科技股份有限公司 | 指纹检测装置和电子设备 |
KR102475288B1 (ko) * | 2019-07-12 | 2022-12-06 | 선전 구딕스 테크놀로지 컴퍼니, 리미티드 | 지문 검출 장치 및 전자 장치 |
CN110379826A (zh) * | 2019-07-26 | 2019-10-25 | 上海思立微电子科技有限公司 | 光学指纹识别芯片以及制造方法 |
CN111052141B (zh) | 2019-08-02 | 2022-08-02 | 深圳市汇顶科技股份有限公司 | 指纹检测装置和电子设备 |
KR20210019641A (ko) * | 2019-08-12 | 2021-02-23 | 삼성전자주식회사 | 생체 정보 센싱 모듈 및 이를 포함하는 전자 장치 |
CN111328398B (zh) * | 2019-08-23 | 2021-09-17 | 深圳市汇顶科技股份有限公司 | 指纹识别装置和电子设备 |
CN211375617U (zh) * | 2019-08-23 | 2020-08-28 | 深圳市汇顶科技股份有限公司 | 指纹识别装置和电子设备 |
CN111095285B (zh) * | 2019-08-23 | 2021-09-17 | 深圳市汇顶科技股份有限公司 | 指纹识别装置和电子设备 |
EP3809315B1 (en) | 2019-08-23 | 2022-12-07 | Shenzhen Goodix Technology Co., Ltd. | Fingerprint detection method |
CN111133445B (zh) * | 2019-08-23 | 2021-09-24 | 深圳市汇顶科技股份有限公司 | 指纹识别装置和电子设备 |
WO2021035714A1 (zh) | 2019-08-30 | 2021-03-04 | 京东方科技集团股份有限公司 | 纹路图像获取装置、显示装置及准直部件 |
CN110674699A (zh) * | 2019-08-30 | 2020-01-10 | 华为技术有限公司 | 一种指纹装置、电子设备及其制造方法 |
CN211427365U (zh) * | 2019-10-16 | 2020-09-04 | 深圳阜时科技有限公司 | 光学检测装置和电子设备 |
CN111095282B (zh) * | 2019-10-18 | 2023-09-05 | 深圳市汇顶科技股份有限公司 | 指纹检测装置和电子设备 |
CN111837131B (zh) * | 2019-10-18 | 2024-04-26 | 深圳市汇顶科技股份有限公司 | 指纹识别装置和电子设备 |
WO2021077265A1 (zh) * | 2019-10-21 | 2021-04-29 | 深圳市汇顶科技股份有限公司 | 指纹识别装置和电子设备 |
CN111095278B (zh) * | 2019-10-24 | 2023-09-05 | 深圳市汇顶科技股份有限公司 | 指纹识别装置和电子设备 |
WO2021082680A1 (zh) * | 2019-11-01 | 2021-05-06 | 上海菲戈恩微电子科技有限公司 | 图像采集光学结构及鉴别真假生物特征的方法和电子设备 |
CA3156517A1 (en) * | 2019-11-01 | 2021-05-06 | Wavetouch Denmark A/S | Method for manufacturing a biometric imaging device by means of nanoimprint lithography |
CN110796122A (zh) * | 2019-11-22 | 2020-02-14 | 深圳阜时科技有限公司 | 光学式指纹感测装置和电子设备 |
CN111104866A (zh) * | 2019-11-22 | 2020-05-05 | 深圳阜时科技有限公司 | 光学式指纹感测装置和电子设备 |
CN110796123A (zh) * | 2019-11-22 | 2020-02-14 | 深圳阜时科技有限公司 | 光学式指纹感测装置和电子设备 |
CN110828498A (zh) * | 2019-11-22 | 2020-02-21 | 深圳阜时科技有限公司 | 光学式感测装置和电子设备 |
CN111104864B (zh) * | 2019-11-22 | 2024-07-23 | 深圳阜时科技有限公司 | 光学式指纹感测装置和电子设备 |
CN111598060A (zh) * | 2019-12-11 | 2020-08-28 | 神盾股份有限公司 | 指纹感测系统及其使用方法 |
CN110928017A (zh) * | 2019-12-13 | 2020-03-27 | 武汉华星光电技术有限公司 | 显示面板 |
WO2021126058A1 (en) * | 2019-12-18 | 2021-06-24 | Fingerprint Cards Ab | Biometric imaging device and electronic device |
CN113009610A (zh) * | 2019-12-19 | 2021-06-22 | 上海箩箕技术有限公司 | 滤光组件及其形成方法和滤光方法 |
US11017200B1 (en) * | 2020-01-29 | 2021-05-25 | Omnivision Technologies, Inc. | Collimator for under-display optical fingerprint sensing |
CN211857087U (zh) * | 2020-02-24 | 2020-11-03 | 宁波激智科技股份有限公司 | 一种减干涉准直膜 |
WO2021174423A1 (zh) * | 2020-03-03 | 2021-09-10 | 深圳市汇顶科技股份有限公司 | 指纹识别装置、显示屏和电子设备 |
CN115298701A (zh) | 2020-03-18 | 2022-11-04 | 上海思立微电子科技有限公司 | 屏下光学指纹识别装置及指纹识别方法 |
CN111366997A (zh) * | 2020-04-16 | 2020-07-03 | 欧菲微电子技术有限公司 | 微透镜阵列、生物识别模组及其电子设备 |
CN111490085B (zh) * | 2020-04-22 | 2022-12-09 | 京东方科技集团股份有限公司 | 显示面板、其制作方法及显示装置 |
CN111368809A (zh) * | 2020-04-23 | 2020-07-03 | 上海菲戈恩微电子科技有限公司 | 光学生物指纹识别结构及图像边缘相对照度提高方法 |
CN113555377A (zh) * | 2020-04-26 | 2021-10-26 | 上海箩箕技术有限公司 | 滤光组件及其形成方法 |
EP4145336A4 (en) * | 2020-04-28 | 2023-12-27 | Beijing Xiaomi Mobile Software Co., Ltd. Nanjing Branch | TERMINAL DEVICE |
KR20210142789A (ko) * | 2020-05-18 | 2021-11-26 | 삼성디스플레이 주식회사 | 지문 센서, 그의 제조 방법, 및 그를 포함한 표시 장치 |
WO2021232370A1 (en) * | 2020-05-21 | 2021-11-25 | Huawei Technologies Co., Ltd. | Image sensor display and method of operation thereof |
CN113836987A (zh) * | 2020-06-24 | 2021-12-24 | 京东方科技集团股份有限公司 | 传感器装置、电子设备和降低信号噪声的方法 |
CN114641808B (zh) * | 2020-09-24 | 2024-04-12 | 京东方科技集团股份有限公司 | 纹路识别模组、其制作方法及显示装置 |
CN112185987A (zh) * | 2020-10-09 | 2021-01-05 | 苏州晶方半导体科技股份有限公司 | 生物识别指纹芯片的封装结构和方法 |
CN112259584B (zh) * | 2020-10-20 | 2024-04-16 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示装置 |
WO2022098201A1 (ko) * | 2020-11-09 | 2022-05-12 | 주식회사 엘엠에스 | 광학 시트 |
FR3117613A1 (fr) * | 2020-12-14 | 2022-06-17 | Isorg | Filtre angulaire optique |
FR3117615B1 (fr) * | 2020-12-14 | 2023-08-04 | Isorg | Filtre angulaire optique |
FR3117611B1 (fr) * | 2020-12-14 | 2023-08-04 | Isorg | Filtre angulaire optique |
FR3117612A1 (fr) * | 2020-12-14 | 2022-06-17 | Isorg | Filtre optique |
CN112596187A (zh) * | 2020-12-18 | 2021-04-02 | 江西晶超光学有限公司 | 镜头组件、镜头模组及电子设备 |
CN112699761A (zh) * | 2020-12-24 | 2021-04-23 | 厦门天马微电子有限公司 | 一种指纹识别面板和指纹识别显示模组 |
CN112698432B (zh) * | 2020-12-31 | 2022-08-19 | 维沃移动通信有限公司 | 光学膜片、光学模组及电子设备 |
CN112885873A (zh) * | 2021-01-14 | 2021-06-01 | 京东方科技集团股份有限公司 | 显示面板及其制备方法、显示装置 |
TWM624315U (zh) * | 2021-03-18 | 2022-03-11 | 神盾股份有限公司 | 光感測模組 |
CN113138481A (zh) * | 2021-04-27 | 2021-07-20 | 武汉华星光电技术有限公司 | 显示面板及显示装置 |
TWI811854B (zh) * | 2021-07-23 | 2023-08-11 | 友達光電股份有限公司 | 光學感測裝置 |
CN114002769A (zh) * | 2021-10-20 | 2022-02-01 | 武汉华星光电技术有限公司 | 滤光准直复合膜及其制造方法、显示装置 |
EP4213116A1 (en) * | 2022-01-14 | 2023-07-19 | WaveTouch Denmark A/S | Compact optical sensor |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6344263B1 (en) * | 1998-03-30 | 2002-02-05 | 3M Innovative Properties Company | Light dispersing film and method of manufacture |
JP5104306B2 (ja) * | 2005-07-08 | 2012-12-19 | 株式会社ニコン | 固体撮像素子 |
KR100826452B1 (ko) * | 2006-12-18 | 2008-04-29 | 삼성전기주식회사 | 광학 부품 및 그 제조방법 |
TWI358533B (en) * | 2007-11-21 | 2012-02-21 | Wintek Corp | Light sensing apparatus and display thereof |
TWI529390B (zh) * | 2012-11-21 | 2016-04-11 | 茂丞科技股份有限公司 | 生物感測器模組、組件、製造方法及使用其之電子設備 |
TWI534717B (zh) * | 2014-05-30 | 2016-05-21 | 正崴精密工業股份有限公司 | 指紋感測器 |
US10147757B2 (en) * | 2015-02-02 | 2018-12-04 | Synaptics Incorporated | Image sensor structures for fingerprint sensing |
US10126562B2 (en) * | 2015-02-09 | 2018-11-13 | Samsung Electronics Co., Ltd. | Apparatus and methods for reducing moire fringe |
KR102458297B1 (ko) * | 2016-01-12 | 2022-10-25 | 삼성전자주식회사 | 전자 장치 및 그를 제조하는 방법 |
TW201730809A (zh) * | 2016-02-19 | 2017-09-01 | 致伸科技股份有限公司 | 指紋辨識模組及其製造方法 |
US10108841B2 (en) * | 2016-03-31 | 2018-10-23 | Synaptics Incorporated | Biometric sensor with diverging optical element |
CN107437055A (zh) | 2016-05-25 | 2017-12-05 | 深圳印象认知技术有限公司 | 一种图像采集器和指纹采集设备 |
CN107437046B (zh) * | 2016-05-25 | 2020-12-01 | 讯芯电子科技(中山)有限公司 | 指纹传感器封装结构及其制作方法 |
US10331932B2 (en) | 2016-06-08 | 2019-06-25 | Novatek Microelectronics Corp. | Optical sensor device and a fingerprint sensor apparatus |
US10354114B2 (en) * | 2016-06-13 | 2019-07-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fingerprint sensor in InFO structure and formation method |
WO2018004243A1 (ko) * | 2016-06-28 | 2018-01-04 | 주식회사 비욘드아이즈 | 지문인식 기능을 구비한 디스플레이 |
WO2018139790A1 (ko) * | 2017-01-24 | 2018-08-02 | 엘지전자 주식회사 | 이동 단말기 |
WO2018137151A1 (zh) * | 2017-01-24 | 2018-08-02 | 华为技术有限公司 | 一种显示面板及其制作方法、显示装置 |
US10388689B2 (en) * | 2017-02-13 | 2019-08-20 | Egis Technology Inc. | Fingerprint identification system, sensing method and manufacturing method |
CN106847872B (zh) * | 2017-03-24 | 2020-03-20 | 京东方科技集团股份有限公司 | 显示装置 |
KR101910518B1 (ko) * | 2017-04-11 | 2018-10-22 | 삼성전자주식회사 | 생체 센서 및 생체 센서를 포함하는 장치 |
CN109033926A (zh) | 2017-06-08 | 2018-12-18 | 上海箩箕技术有限公司 | 指纹成像模组和电子设备 |
US10891460B2 (en) * | 2017-07-18 | 2021-01-12 | Will Semiconductor (Shanghai) Co. Ltd. | Systems and methods for optical sensing with angled filters |
CN107728240A (zh) * | 2017-08-28 | 2018-02-23 | 苏州端景光电仪器有限公司 | 一种用于指纹识别的自聚焦透镜阵列及移动终端 |
CN107818732B (zh) * | 2017-11-21 | 2020-07-21 | 京东方科技集团股份有限公司 | 一种显示单元、显示面板及显示装置 |
US10796128B2 (en) * | 2017-12-12 | 2020-10-06 | Fingerprint Cards Ab | Optical sensor with ambient light filter |
CN108010931B (zh) * | 2017-12-28 | 2021-03-30 | 苏州晶方半导体科技股份有限公司 | 一种光学指纹芯片的封装结构以及封装方法 |
CN108073912B (zh) | 2018-01-03 | 2021-01-26 | 京东方科技集团股份有限公司 | 指纹识别装置和指纹识别设备 |
WO2019184361A1 (en) * | 2018-03-27 | 2019-10-03 | Guangdong Oppo Mobile Telecommunications Corp., Ltd. | Display screen assembly and electronic device |
WO2020056771A1 (zh) | 2018-09-21 | 2020-03-26 | 深圳市汇顶科技股份有限公司 | 指纹识别装置和电子设备 |
CN111860452B (zh) | 2019-02-02 | 2022-03-04 | 深圳市汇顶科技股份有限公司 | 指纹识别装置和电子设备 |
CN209640880U (zh) | 2019-04-10 | 2019-11-15 | 深圳市汇顶科技股份有限公司 | 光学指纹识别装置和电子设备 |
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- 2019-04-10 CN CN201921013044.2U patent/CN210038821U/zh active Active
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CN208848221U (zh) | 2019-05-10 |
EP3748532A1 (en) | 2020-12-09 |
CN209640880U (zh) | 2019-11-15 |
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EP3748532A4 (en) | 2020-12-09 |
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