CN113658852A - 硅基尺寸可控β-Ga2O3纳米线的制备方法 - Google Patents
硅基尺寸可控β-Ga2O3纳米线的制备方法 Download PDFInfo
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Abstract
本发明公开了一种硅基尺寸可控β‑Ga2O3纳米线的制备方法,所述硅基尺寸可控β‑Ga2O3纳米线的制备工艺是:首先在单晶Si(100)衬底上沉积不同厚度的金(Au)催化层,并对催化层进行原位球化退火,得到不同尺寸的Au纳米颗粒,然后进行磁控溅射生长β‑Ga2O3纳米线并原位退火,得到不同尺寸的β‑Ga2O3纳米线。本发明通过调控β‑Ga2O3纳米线的尺寸可得到具有缺陷少、电阻率高、均匀致密等优点的β‑Ga2O3纳米线。本发明制备的不同的尺寸的β‑Ga2O3纳米线在日盲紫外探测器应用中表现出优异的性能,在军事领域可应用于导弹逼近预警系统、紫外通信、紫外成像导航等,在民用领域的汽车尾气检测、火焰检测、指纹检测等方面有广阔的应用前景。
Description
技术领域
本发明涉及一种调控氧化镓(Ga2O3)纳米线直径尺寸的方法,属于半导体材料制造工艺技术领域。
背景技术
Ga2O3是一种重要的化合物半导体材料。其具有热稳定性好、光吸收系数大、化学稳定性高、巴利加尤值高、制备成本较低等优点。Ga2O3有着多种同分异构体,分别被记为α-Ga2O3、β-Ga2O3、γ-Ga2O3、δ-Ga2O3、ε-Ga2O3。它们之间的差异不仅在于晶体空间型,还在于晶格中镓离子的配位数。通过不同的制备方法和特殊的条件,可以对不同相的Ga2O3进行调控。在这些Ga2O3的同分异构体中,只有单斜晶系β-Ga2O3是稳态相。β-Ga2O3能够通过其它亚稳态相在空气中进行长时间高温处理转化而来。因此,β-Ga2O3是最具光泛应用前景的稳定结构。
β-Ga2O3的制备的主要方法有:磁控溅射、金属有机化学气相沉积、脉冲激光沉积、分子束外延等。相对于其它生长技术而言,磁控溅射技术操作简单、可实现大面积镀膜。制备的材料具有强的附着力和较为均匀的结构。目前生长Ga2O3的衬底有SiC、蓝宝石、金刚石、GaN、Si等。其中,SiC、蓝宝石、金刚石、GaN等作为衬底价格较高、衬底制备工艺不成熟。聚对苯二甲酸乙二醇酯(PET)作为柔性衬底可以加大器件的弯曲特性,但是不能承受高温,具有良好结晶性的Ga2O3需要在高温环境下生长。硅衬底材料丰富,具有很好的热稳定性及器件集成性。因此,以硅作为衬底制备高质量Ga2O3有利于Ga2O3基器件的制备与集成应用。
迄今为止,硅基β-Ga2O3具有不同形式:单晶、薄膜等结构等。这些结构已经应用于日盲紫外探测器的制备,但是制备工艺尚不成熟。虽然单晶β-Ga2O3具有优异的性能,但其制备难度大且对设备要求高。β-Ga2O3薄膜虽然容易制备,但由于内应力的存在,其内部结构具有缺陷较多和致密性较差的缺点,从而导致制备的器件漏电流较大。而且β-Ga2O3薄膜基探测器与入射光接触面积较小。因此,为改善β-Ga2O3日盲紫外探测器的光电探测性能,我们提出通过采用Au层作为催化剂来制备硅基β-Ga2O3纳米线,从而提升β-Ga2O3的结构致密性和光接触面积,并通过控制Au催化层厚度来调控纳米线的尺寸,通过前球化退火处理以及后退火处理等工艺改善纳米线质量,进而减少晶界和缺陷的影响。高质量的β-Ga2O3纳米线可用于制备响应度更高,响应速度更快的日盲紫外紫外探测器,可广泛应用于军事领域:导弹逼近预警系统、紫外通信、紫外成像辅助导航等,也可广泛应用于民用领域:汽车尾气的监测、火焰检测、DNA测试等。
发明内容
为了解决现有技术问题,本发明的目的在于克服已有技术存在的不足,提供一种硅基尺寸可控β-Ga2O3纳米线的制备方法,通过调控β-Ga2O3纳米线的尺寸可得到具有缺陷少、电阻率高、均匀致密等优点的β-Ga2O3纳米线。
为达到上述发明创造目的,本发明采用如下技术方案:
一种硅基尺寸可控β-Ga2O3纳米线的制备方法,包括如下步骤:
(1)Au催化层的制备:
采用电子束溅射沉积方法,在经清洗和表面态处理的单晶(100)Si衬底上生长一层厚度为10~40nm的Au催化层,通过控制催化层厚度来调控β-Ga2O3纳米线的尺寸;所用的Au为高纯Au,按照金属所含杂质浓度比例作为金属纯度的计算方法,金属纯度为99~99.99999%;
(2)β-Ga2O3纳米线的生长过程:
采用磁控溅射方法,在所述步骤(1)中所制备的带有Au催化层的衬底上生长β-Ga2O3纳米线;选取Ga2O3靶材的纯度不低于99.99%;在正式溅射前,先对Au催化层在不低于600℃预处理至少30mins,对Au催化层进行原位球化退火,使其变成Au纳米颗粒;然后进行正式溅射,将衬底温度继续升温至不低于700℃,通入Ar气产生辉光等离子体,从而制备出β-Ga2O3纳米线;
(3)β-Ga2O3纳米线的原位退火处理:
将所述步骤(2)中制备的β-Ga2O3纳米线进行原位后退火处理,退火温度不低于700℃,从而获得结构均匀致密的β-Ga2O3纳米线,退火结束后,待样品冷却至室温,取出硅基β-Ga2O3纳米线成品。
优选地,在所述步骤(1)中,采用电子束溅射沉积方法,在衬底上生长Au催化层。
优选地,在所述步骤(1)中,获得在衬底上制备的Au催化层厚度为10~30nm。
优选地,在所述步骤(1)中,对单晶(100)Si衬底酸洗后,再进行不低于300℃预处理至少30mins,得到洁净干燥的衬底表面态。
优选地,在所述步骤(1)中,对单晶(100)Si衬底酸洗时,按照体积比例计算,采用HF:H2O的比例为1:9的溶液进行酸洗,从而去除Si衬底表面的氧化物。
优选地,在所述步骤(2)中,采用射频磁控的制备方法,控制溅射腔体的本底真空不高于10-7Torr,溅射气压不高于10-3Torr,溅射功率不低于200W,溅射时间至少为300mins。
优选地,在所述步骤(2)中,控制各加热阶段升温速率不低于10℃/min。
优选地,在所述步骤(2)中,氩气为纯度不低于99.999%的高纯氩气,流量至少为32sccm。
优选地,在所述步骤(3)中,退火时间至少为1h。
优选地,在所述步骤(2)中,对Au催化层进行原位球化退火,球化退火后Au纳米颗粒宽度尺寸为100-200nm;则在所述步骤(3)中,硅基β-Ga2O3纳米线成品的β-Ga2O3纳米线结构直径为100-200nm。
本发明与现有技术相比较,具有如下显而易见的突出实质性特点和显著优点:
1.本发明在单晶(100)Si衬底上生长β-Ga2O3纳米线,相比其他取向Si衬底上生长的β-Ga2O3纳米线,相比其他取向Si衬底上生长的β-Ga2O3纳米线,具有较好的晶格匹配度,所制备的纳米结构较为致密且表面粗糙度较低;
2.本发明采用射频磁控的制备工艺,相比其他生长工艺操作简单、成本更低、可大面积制备、批量生长可行性高;
3.本发明通过设定不同的Au催化层厚度来调控β-Ga2O3纳米线的尺寸,减少晶界和缺陷的影响,实现制备的日盲紫外探测器时具有较快的载流子传输速度,实现较快的响应;
4.本发明方法简单易行,成本低,适合推广使用。
附图说明
图1为本发明的β-Ga2O3纳米线制备流程图。
图2为本发明实施例一制备的硅基β-Ga2O3纳米线的表面形貌图。
具体实施方式
以下结合具体的实施例子对上述方案做进一步说明,本发明的优选实施例详述如下:
实施例一:
在本实施例中,在单晶(100)Si衬底上制备10nm的Au催化层,按照金属所含杂质浓度比例作为金属纯度的计算方法,选取纯度为99.999%的高纯Au作为电子束蒸发的材料;溅射前对Au催化层进行600℃球化退火处理,然后升温至700℃正式溅射Ga2O3;Ga2O3靶材纯度为99.99%,最后进行700℃原位退火。
一种硅基β-Ga2O3纳米线尺寸可控制备方法,包括如下步骤:
(1)衬底清洗及预处理:
选取单晶(100)Si衬底,尺寸为20mm×20mm,厚度为0.5mm;该衬底依次在去离子水、丙酮、无水乙醇和去离子水中分别超声5min后,然后再在稀释过的HF溶液中进行酸洗2min,最后在去离子水中清洗5mins,用高纯氮气吹干,得到洁净干燥的衬底;为了弥补因为酸洗去除表面氧化物带来的衬底表面态的改变,将洗净的衬底迅速移入真空腔体内,在300℃的温度下处理30mins,改善衬底表面态;
(2)Au催化层的制备
采用电子束溅射沉积方法,在所述步骤(1)中进行表面态处理过的Si衬底上生长厚度为10nm的Au催化层;所用的金属为高纯Au,按照金属所含杂质浓度比例作为金属纯度的计算方法,金属纯度为99.999%;电子束电压为9.7keV,功率设定为39.6%,速率为0.6A/s生长温度为室温;
(3)β-Ga2O3纳米线的生长
将所述步骤(2)中制备所得的带有10nm厚的Au催化层衬底放进真空腔体内,打开旋转,旋转速率为5rpm,将衬底温度升至600℃,升温速率为10℃/min,保温30min;此目的是为了将Au催化层进行原位球化退火,使其变成Au纳米颗粒;然后将衬底温度升温至700℃,往腔体内充入高纯氩气进行正式沉积,流量控制为32sccm,溅射功率设为200W,控制溅射时间为300mins;
(4)β-Ga2O3纳米线的原位退火处理
样品生长结束后,在700℃原位退火1h;目的是让原子获取足够的时间和能量进行扩散融合,获得更为均匀致密的样品;退火结束后,以10℃/min的降温速率降至室温,关闭旋转,取出样品。
实验测试分析:
本实施例中球化退火后Au纳米颗粒尺寸为100nm,制备的β-Ga2O3纳米线结构直径为100nm。在该样品上生长Ti/Au复合电极后制备成日盲紫外探测器,测试暗电流为1.99E-10A,光电流为3.5E-6A,响应上升时间为0.34s,下降时间为0.57s。本发明为了适应日盲紫外探测器的应用,在单晶(100)Si衬底上制备高质量β-Ga2O3纳米线,能显著弥补薄膜的缺陷。这种β-Ga2O3纳米线与多晶β-Ga2O3薄膜相比,具有缺陷少、电阻率高、光接触面积大等优点,适合制作日盲紫外探测器。
实施例二:
本实施例与实施例一基本相同,特别之处在于:
在本实施例中,在单晶(100)Si衬底上制备20nm厚的Au催化层,按照金属所含杂质浓度比例作为金属纯度的计算方法,选取纯度为99.999%的高纯Au作为电子束蒸发的材料;溅射前对Au催化层进行600℃球化退火处理,然后升温至700℃正式溅射Ga2O3;Ga2O3靶材纯度为99.99%,最后进行700℃原位退火。
一种硅基β-Ga2O3纳米线尺寸可控制备方法,包括如下步骤:
(1)衬底清洗及预处理:
选取单晶(100)Si衬底,尺寸为20mm×20mm,厚度为0.5mm;该衬底依次在去离子水、丙酮、无水乙醇和去离子水中分别超声5min后,然后再在稀释过的HF溶液中进行酸洗2min,最后在去离子水中清洗5mins,用高纯氮气吹干,得到洁净干燥的衬底;为了弥补因为酸洗去除表面氧化物带来的衬底表面态的改变,将洗净的衬底迅速移入真空腔体内,在300℃的温度下处理30mins,改善衬底表面态;
(2)Au催化层的制备
采用电子束溅射沉积方法,在所述步骤(1)中进行表面态处理过的Si衬底上生长厚度为20nm的Au催化层;所用的金属为高纯Au,按照金属所含杂质浓度比例作为金属纯度的计算方法,金属纯度为99.999%;电子束电压为9.7keV,功率设定为39.6%,速率为0.6A/s生长温度为室温;
(3)β-Ga2O3纳米线的生长
将所述步骤(2)中制备所得的带有20nm厚的Au催化层衬底放进真空腔体内,打开旋转,旋转速率为5rpm,将衬底温度升至600℃,升温速率为10℃/min,保温30min;此目的是为了将Au催化层进行原位球化退火,使其变成Au纳米颗粒;然后将衬底温度升温至700℃,往腔体内充入高纯氩气进行正式沉积,流量控制为32sccm,溅射功率设为200W,控制溅射时间为300mins;
(4)β-Ga2O3纳米线的原位退火处理
样品生长结束后,在700℃原位退火1h;目的是让原子获取足够的时间和能量进行扩散融合,获得更为均为致密的样品;退火结束后,以10℃/min的降温速率降至室温,关闭旋转,取出样品。
实验测试分析:
本实施例中球化退火后Au纳米颗粒尺寸为150nm,制备的β-Ga2O3纳米线结构直径为150nm。在该样品上生长Ti/Au复合电极后制备成日盲紫外探测器,测试暗电流为8.7E-11A,光电流为9.6E-6A,响应上升时间为0.21s,下降时间为0.33s。与实施例一相比,纳米线尺寸较大幅度上升,制备的日盲紫外探测器性能更优,纳米结构更为致密,减少了晶界和缺陷的影响。本发明为了适应日盲紫外探测器的应用,在单晶(100)Si衬底上制备高质量β-Ga2O3纳米线,能显著弥补薄膜的缺陷。这种β-Ga2O3纳米线与多晶β-Ga2O3薄膜相比,具有缺陷少、电阻率高、光接触面积大等优点,适合制作日盲紫外探测器。
实施例三:
本实施例与实施例一基本相同,特别之处在于:
在本实施例中,在单晶(100)Si衬底上制备30nm的Au催化层,按照金属所含杂质浓度比例作为金属纯度的计算方法,选取纯度为99.999%的高纯Au作为电子束蒸发的材料。溅射前对Au催化层进行600℃球化退火处理,然后升温至700℃正式溅射Ga2O3。Ga2O3靶材纯度为99.99%,最后进行700℃原位退火。
一种硅基β-Ga2O3纳米线尺寸可控制备方法,包括如下步骤:
(1)衬底清洗及预处理:
选取单晶(100)Si衬底,尺寸为20mm×20mm,厚度为0.5mm;该衬底依次在去离子水、丙酮、无水乙醇和去离子水中分别超声5min后,然后再在稀释过的HF溶液中进行酸洗2min,最后在去离子水中清洗5mins,用高纯氮气吹干,得到洁净干燥的衬底;为了弥补因为酸洗去除表面氧化物带来的衬底表面态的改变,将洗净的衬底迅速移入真空腔体内,在300℃的温度下处理30mins,改善衬底表面态;
(2)Au催化层的制备
采用电子束溅射沉积方法,在所述步骤(1)中进行表面态处理过的Si衬底上生长厚度为30nm的Au催化层;所用的金属为高纯Au,按照金属所含杂质浓度比例作为金属纯度的计算方法,金属纯度为99.999%;电子束电压为9.7keV,功率设定为39.6%,速率为0.6A/s生长温度为室温;
(3)β-Ga2O3纳米线的生长
将所述步骤(2)中制备所得的带有30nm厚的Au催化层衬底放进真空腔体内,打开旋转,旋转速率为5rpm,将衬底温度升至600℃,升温速率为10℃/min,保温30min;此目的是为了将Au催化层进行原位球化退火,使其变成Au纳米颗粒;然后将衬底温度升温至700℃,往腔体内充入高纯氩气进行正式沉积,流量控制为32sccm,溅射功率设为200W,控制溅射时间为300mins;
(4)β-Ga2O3纳米线的原位退火处理
样品生长结束后,在700℃原位退火1h;目的是让原子获取足够的时间和能量进行扩散融合,获得更为均为致密的样品;退火结束后,以10℃/min的降温速率降至室温,关闭旋转,取出样品。
实验测试分析:
本实施例中球化退火后Au纳米颗粒尺寸为200nm,制备的β-Ga2O3纳米线结构直径为200nm。在该样品上生长Ti/Au复合电极后制备成日盲紫外探测器,测试暗电流为1.73E-11A,光电流为8.9E-5A,响应上升时间为0.16s,下降时间为0.27s。与实施例一相比,纳米线尺寸较大幅度上升,制备的日盲紫外探测器性能更优,纳米结构更为致密,减少了晶界和缺陷的影响。本发明为了适应日盲紫外探测器的应用,在单晶(100)Si衬底上制备高质量β-Ga2O3纳米线,能显著弥补薄膜的缺陷。这种β-Ga2O3纳米线与多晶β-Ga2O3薄膜相比,具有缺陷少、电阻率高、光接触面积大等优点,适合制作日盲紫外探测器。
实施例四:
本实施例与实施例一基本相同,特别之处在于:
在本实施例中,在单晶(100)Si衬底上制备40nm的Au催化层,按照金属所含杂质浓度比例作为金属纯度的计算方法,选取纯度为99.999%的高纯Au作为电子束蒸发的材料。溅射前对Au催化层进行600℃球化退火处理,然后升温至700℃正式溅射Ga2O3。Ga2O3靶材纯度为99.99%,最后进行700℃原位退火。
一种硅基β-Ga2O3纳米线尺寸可控制备方法,包括如下步骤:
(1)衬底清洗及预处理:
选取单晶(100)Si衬底,尺寸为20mm×20mm,厚度为0.5mm;该衬底依次在去离子水、丙酮、无水乙醇和去离子水中分别超声5min后,然后再在稀释过的HF溶液中进行酸洗2min,最后在去离子水中清洗5mins,用高纯氮气吹干,得到洁净干燥的衬底;为了弥补因为酸洗去除表面氧化物带来的衬底表面态的改变,将洗净的衬底迅速移入真空腔体内,在300℃的温度下处理30mins,改善衬底表面态;
(2)Au催化层的制备
采用电子束溅射沉积方法,在所述步骤(1)中进行表面态处理过的Si衬底上生长厚度为40nm的Au催化层;所用的金属为高纯Au,按照金属所含杂质浓度比例作为金属纯度的计算方法,金属纯度为99.999%;电子束电压为9.7keV,功率设定为39.6%,速率为0.6A/s生长温度为室温;
(3)β-Ga2O3纳米线的生长
将所述步骤(2)中制备所得的带有40nm厚的Au催化层衬底放进真空腔体内,打开旋转,旋转速率为5rpm,将衬底温度升至600℃,升温速率为10℃/min,保温30min;此目的是为了将Au催化层进行原位球化退火,使其变成Au纳米颗粒;然后将衬底温度升温至700℃,往腔体内充入高纯氩气进行正式沉积,流量控制为32sccm,溅射功率设为200W,控制溅射时间为300mins;
(4)β-Ga2O3纳米线的原位退火处理
样品生长结束后,在700℃原位退火1h;目的是让原子获取足够的时间和能量进行扩散融合,获得更为均为致密的样品;退火结束后,以10℃/min的降温速率降至室温,关闭旋转,取出样品。
实验测试分析:
本实施例中球化退火后Au纳米颗粒尺寸分布不均,大小不一,制备的纳米结构开始出现簇状堆积。出现此现象的原因是由于Au催化层过厚,影响了β-Ga2O3的立体结构生长。在该样品上生长Ti/Au复合电极后,测试暗电流为9.3E-6A,未能测出光电流。由于制备的样品内部缺陷太多,致密性较差,不适合制作日盲紫外探测器。
总而言之,Au催化层厚度从10nm~30nm时,纳米线直径尺寸出现增大趋势,所制备的日盲紫外探测器性能逐渐优化,Au催化层厚度为40nm时,由于催化层厚度较大,阻碍了β-Ga2O3的立体结构生长。故可在10nm~30nm内控制Au催化层厚度实现对β-Ga2O3纳米线直径尺寸的调控,进而制备出高性能的日盲紫外探测器。
综上所述,本发明上述实施例硅基尺寸可控β-Ga2O3纳米线的制备工艺,所述硅基尺寸可控β-Ga2O3纳米线的制备工艺是:首先在单晶Si(100)衬底上沉积不同厚度的金(Au)催化层,并对催化层进行原位球化退火,得到不同尺寸的Au纳米颗粒,然后进行磁控溅射生长β-Ga2O3纳米线并原位退火,得到不同尺寸的β-Ga2O3纳米线。本发明上述实施例通过调控β-Ga2O3纳米线的尺寸可得到具有缺陷少、电阻率高、均匀致密等优点的β-Ga2O3纳米线。本发明制备的不同的尺寸的β-Ga2O3纳米线在日盲紫外探测器应用中表现出优异的性能,在军事领域可应用于导弹逼近预警系统、紫外通信、紫外成像导航等,在民用领域的汽车尾气检测、火焰检测、指纹检测等方面有广阔的应用前景。
上面结合附图对本发明实施例进行了说明,但本发明不限于上述实施例,还可以根据本发明的发明创造的目的做出多种变化,凡依据本发明技术方案的精神实质和原理下做的改变、修饰、替代、组合或简化,均应为等效的置换方式,只要符合本发明的发明目的,只要不背离本发明采用的制备方法技术原理和发明构思,都属于本发明的保护范围。
Claims (9)
1.一种硅基尺寸可控β-Ga2O3纳米线的制备方法,其特征在于,包括如下步骤:
(1)Au催化层的制备:
采用电子束溅射沉积方法,在经清洗和表面态处理的单晶(100)Si衬底上生长一层厚度为10~40nm的Au催化层,通过控制催化层厚度来调控β-Ga2O3纳米线的尺寸;所用的Au为高纯Au,按照金属所含杂质浓度比例作为金属纯度的计算方法,金属纯度为99~99.99999%;
(2)β-Ga2O3纳米线的生长过程:
采用磁控溅射方法,在所述步骤(1)中所制备的带有Au催化层的衬底上生长β-Ga2O3纳米线;选取Ga2O3靶材的纯度不低于99.99%;在正式溅射前,先对Au催化层在不低于600℃预处理至少30mins,对Au催化层进行原位球化退火,使其变成Au纳米颗粒;然后进行正式溅射,将衬底温度继续升温至不低于700℃,通入Ar气产生辉光等离子体,从而制备出β-Ga2O3纳米线;
(3)β-Ga2O3纳米线的原位退火处理:
将所述步骤(2)中制备的β-Ga2O3纳米线进行原位后退火处理,退火温度不低于700℃,从而获得结构均匀致密的β-Ga2O3纳米线,退火结束后,待样品冷却至室温,取出硅基β-Ga2O3纳米线成品。
2.根据权利要求1所述硅基尺寸可控β-Ga2O3纳米线的制备方法,其特征在于:在所述步骤(1)中,采用电子束溅射沉积方法,在衬底上生长Au催化层。
3.根据权利要求1所述硅基尺寸可控β-Ga2O3纳米线的制备方法,其特征在于:在所述步骤(1)中,获得在衬底上制备的Au催化层厚度为10~30nm。
4.根据权利要求1所述硅基尺寸可控β-Ga2O3纳米线的制备方法,其特征在于:在所述步骤(1)中,对单晶(100)Si衬底酸洗后,再进行不低于300℃预处理至少30mins,得到洁净干燥的衬底表面态。
5.根据权利要求1所述硅基尺寸可控β-Ga2O3纳米线的制备方法,其特征在于:在所述步骤(1)中,对单晶(100)Si衬底酸洗时,按照体积比例计算,采用HF:H2O的比例为1:9的溶液进行酸洗,从而去除Si衬底表面的氧化物。
6.根据权利要求1所述硅基尺寸可控β-Ga2O3纳米线的制备方法,其特征在于:在所述步骤(2)中,采用射频磁控的制备方法,控制溅射腔体的本底真空不高于10-7Torr,溅射气压不高于10-3Torr,溅射功率不低于200W,溅射时间至少为300mins。
7.根据权利要求1所述硅基尺寸可控β-Ga2O3纳米线的制备方法,其特征在于:在所述步骤(2)中,氩气为纯度不低于99.999%的高纯氩气,流量至少为32sccm。
8.根据权利要求1所述硅基尺寸可控β-Ga2O3纳米线的制备方法,其特征在于:在所述步骤(3)中,退火时间至少为1h。
9.根据权利要求1所述硅基尺寸可控β-Ga2O3纳米线的制备方法,其特征在于:在所述步骤(2)中,对Au催化层进行原位球化退火,球化退火后Au纳米颗粒宽度尺寸为100-200nm;则在所述步骤(3)中,硅基β-Ga2O3纳米线成品的β-Ga2O3纳米线结构直径为100-200nm。
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