CN113517356B - 基于台阶状P型CBN与SiC混合结构的4H-SiC二极管及制备方法 - Google Patents
基于台阶状P型CBN与SiC混合结构的4H-SiC二极管及制备方法 Download PDFInfo
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- CN113517356B CN113517356B CN202110559929.8A CN202110559929A CN113517356B CN 113517356 B CN113517356 B CN 113517356B CN 202110559929 A CN202110559929 A CN 202110559929A CN 113517356 B CN113517356 B CN 113517356B
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- 238000002360 preparation method Methods 0.000 title claims description 9
- 239000000463 material Substances 0.000 claims abstract description 25
- 238000002347 injection Methods 0.000 claims abstract description 22
- 239000007924 injection Substances 0.000 claims abstract description 22
- 229910052582 BN Inorganic materials 0.000 claims abstract description 17
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000010410 layer Substances 0.000 claims description 92
- 238000002161 passivation Methods 0.000 claims description 22
- 239000011241 protective layer Substances 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 239000007943 implant Substances 0.000 claims description 4
- 238000002513 implantation Methods 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 147
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 62
- 230000005684 electric field Effects 0.000 abstract description 9
- 238000009826 distribution Methods 0.000 abstract description 6
- 239000002184 metal Substances 0.000 description 12
- 230000015556 catabolic process Effects 0.000 description 6
- 238000000137 annealing Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
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- 229910004298 SiO 2 Inorganic materials 0.000 description 3
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- 230000004888 barrier function Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
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- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 1
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- 238000011982 device technology Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
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CN202110559929.8A CN113517356B (zh) | 2021-05-21 | 2021-05-21 | 基于台阶状P型CBN与SiC混合结构的4H-SiC二极管及制备方法 |
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CN202110559929.8A CN113517356B (zh) | 2021-05-21 | 2021-05-21 | 基于台阶状P型CBN与SiC混合结构的4H-SiC二极管及制备方法 |
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CN116314252B (zh) * | 2022-11-23 | 2023-11-07 | 苏州龙驰半导体科技有限公司 | Vdmos器件及提升sic vdmos器件的击穿电压的方法 |
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CN106684157A (zh) * | 2016-07-27 | 2017-05-17 | 西安电子科技大学 | 基于三台阶场板终端的4H‑SiC肖特基二极管及制作方法 |
CN107910360A (zh) * | 2017-12-06 | 2018-04-13 | 中国工程物理研究院电子工程研究所 | 一种新型碳化硅小角度倾斜台面终端结构及其制备方法 |
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JP2013120822A (ja) * | 2011-12-07 | 2013-06-17 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法 |
TWI576920B (zh) * | 2015-11-20 | 2017-04-01 | 敦南科技股份有限公司 | 二極體元件及其製造方法 |
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JP2003303956A (ja) * | 2002-04-11 | 2003-10-24 | Fuji Electric Co Ltd | 炭化けい素半導体素子およびその製造方法 |
CN102938421A (zh) * | 2012-11-14 | 2013-02-20 | 东南大学 | 一种梯形终端的碳化硅结势垒肖特基二极管器件 |
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