CN113451287A - 具有带有穿过模具通孔的模制区域的微电子组件 - Google Patents

具有带有穿过模具通孔的模制区域的微电子组件 Download PDF

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Publication number
CN113451287A
CN113451287A CN202011525753.6A CN202011525753A CN113451287A CN 113451287 A CN113451287 A CN 113451287A CN 202011525753 A CN202011525753 A CN 202011525753A CN 113451287 A CN113451287 A CN 113451287A
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substrate
microelectronic assembly
die
mold material
tsv
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CN202011525753.6A
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Chinese (zh)
Inventor
S·加内桑
R·维斯瓦纳思
X·F·布伦
T·A·伊布拉希姆
J·M·加姆巴
M·杜贝
R·A·梅
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Intel Corp
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Intel Corp
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Publication of CN113451287A publication Critical patent/CN113451287A/zh
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    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
CN202011525753.6A 2020-03-25 2020-12-22 具有带有穿过模具通孔的模制区域的微电子组件 Pending CN113451287A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/829,396 US11302643B2 (en) 2020-03-25 2020-03-25 Microelectronic component having molded regions with through-mold vias
US16/829396 2020-03-25

Publications (1)

Publication Number Publication Date
CN113451287A true CN113451287A (zh) 2021-09-28

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US (6) US11302643B2 (https=)
JP (2) JP7458969B2 (https=)
KR (2) KR102772133B1 (https=)
CN (1) CN113451287A (https=)
DE (1) DE102020132231A1 (https=)

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CN118315381A (zh) * 2024-04-10 2024-07-09 西安交通大学 一种柔性氮化镓功率模块及封装方法

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