CN113348266B - 挠性覆金属板、包含其的物品、及准备该挠性覆金属板的方法 - Google Patents
挠性覆金属板、包含其的物品、及准备该挠性覆金属板的方法 Download PDFInfo
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- CN113348266B CN113348266B CN202080006042.XA CN202080006042A CN113348266B CN 113348266 B CN113348266 B CN 113348266B CN 202080006042 A CN202080006042 A CN 202080006042A CN 113348266 B CN113348266 B CN 113348266B
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- metal
- film layer
- thin film
- clad sheet
- flexible metal
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- 238000000034 method Methods 0.000 title claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 68
- 239000002184 metal Substances 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 230000007547 defect Effects 0.000 claims abstract description 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 74
- 239000010409 thin film Substances 0.000 claims description 64
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 45
- 239000010408 film Substances 0.000 claims description 38
- 229910052759 nickel Inorganic materials 0.000 claims description 37
- 229910052802 copper Inorganic materials 0.000 claims description 35
- 239000010949 copper Substances 0.000 claims description 35
- 229920001721 polyimide Polymers 0.000 claims description 18
- 238000009713 electroplating Methods 0.000 claims description 14
- 238000007772 electroless plating Methods 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- 229920005575 poly(amic acid) Polymers 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000002243 precursor Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 2
- 239000009719 polyimide resin Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 106
- 238000007747 plating Methods 0.000 description 28
- 230000000052 comparative effect Effects 0.000 description 15
- 239000011889 copper foil Substances 0.000 description 10
- 239000003638 chemical reducing agent Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 6
- 150000002815 nickel Chemical class 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000001556 precipitation Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- -1 boron hydride compound Chemical class 0.000 description 4
- 239000008139 complexing agent Substances 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910000365 copper sulfate Inorganic materials 0.000 description 3
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 238000005282 brightening Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N malic acid Chemical compound OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- QYIGOGBGVKONDY-UHFFFAOYSA-N 1-(2-bromo-5-chlorophenyl)-3-methylpyrazole Chemical compound N1=C(C)C=CN1C1=CC(Cl)=CC=C1Br QYIGOGBGVKONDY-UHFFFAOYSA-N 0.000 description 1
- XXSPKSHUSWQAIZ-UHFFFAOYSA-L 36026-88-7 Chemical compound [Ni+2].[O-]P=O.[O-]P=O XXSPKSHUSWQAIZ-UHFFFAOYSA-L 0.000 description 1
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical group FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 1
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical class NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- 229940120146 EDTMP Drugs 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical class NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 description 1
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 1
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 description 1
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 235000004279 alanine Nutrition 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 235000003704 aspartic acid Nutrition 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 description 1
- WVMHLYQJPRXKLC-UHFFFAOYSA-N borane;n,n-dimethylmethanamine Chemical compound B.CN(C)C WVMHLYQJPRXKLC-UHFFFAOYSA-N 0.000 description 1
- 229910010277 boron hydride Inorganic materials 0.000 description 1
- VEWFZHAHZPVQES-UHFFFAOYSA-N boron;n,n-diethylethanamine Chemical compound [B].CCN(CC)CC VEWFZHAHZPVQES-UHFFFAOYSA-N 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 150000001991 dicarboxylic acids Chemical class 0.000 description 1
- NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 235000013922 glutamic acid Nutrition 0.000 description 1
- 239000004220 glutamic acid Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229940046892 lead acetate Drugs 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229940049920 malate Drugs 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229940078494 nickel acetate Drugs 0.000 description 1
- 150000002816 nickel compounds Chemical class 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- BFDHFSHZJLFAMC-UHFFFAOYSA-L nickel(ii) hydroxide Chemical compound [OH-].[OH-].[Ni+2] BFDHFSHZJLFAMC-UHFFFAOYSA-L 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 1
- 150000003009 phosphonic acids Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 229910001380 potassium hypophosphite Inorganic materials 0.000 description 1
- CRGPNLUFHHUKCM-UHFFFAOYSA-M potassium phosphinate Chemical compound [K+].[O-]P=O CRGPNLUFHHUKCM-UHFFFAOYSA-M 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000012279 sodium borohydride Substances 0.000 description 1
- 229910000033 sodium borohydride Inorganic materials 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1635—Composition of the substrate
- C23C18/1639—Substrates other than metallic, e.g. inorganic or organic or non-conductive
- C23C18/1641—Organic substrates, e.g. resin, plastic
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1689—After-treatment
- C23C18/1692—Heat-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
- C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
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Abstract
本发明揭示一种挠性覆金属板、一种包括其的物品,以及一种准备该挠性覆金属板的方法。该经揭示的挠性覆金属膜包含基材层、安置于该基材层上的第一金属薄膜层以及安置于该第一金属薄膜上的第二金属薄膜层,且具有每单位表面积(m2)不超过100个针孔缺陷及不超过100个突起,这些突起具有大于1μm且小于2μm的高度。
Description
技术领域
本发明涉及一种挠性覆金属板、一种包含其的物品、及一种准备该挠性覆金属板的方法。更特定言之,本发明涉及一种具有每单位表面积减少数目的针孔及突起的挠性覆金属板、一种包含其的物品、及一种准备该挠性覆金属板的方法。
背景技术
凭借进来的技术进步,尤其在电子设备行业中的半导体集体电路技术中,为了满足小型化、亮度、高耐久度、高清晰度等的需求,正推动能够实现高整合度的材料的开发。在用于(例如)液晶显示器(LCD)的驱动积体电路(IC)的挠性覆铜板(FCCL)膜的情况中,需要满足精细图案化、薄化及耐久度的需求。
为了产生此挠性覆铜板,近年来已广泛使用的溅镀程序可轻易调适用于精细节距图案化,且因此可将膜的厚度调整至埃级。然而,溅镀程序可带来若干问题,诸如导电膜的表面缺陷或在程序期间调整目标的空间位置的难度。
另外,鉴于溅镀程序的特性,其在高温下执行,且因此,存在聚合物基材膜被热损坏的风险。因此,需要在其中可避免热损坏的条件下执行溅镀程序。然而,在此情况中,可降低生产速度。
另外,溅镀程序需要将黏着层安置于基材膜上,此归因于金属与通常用作基材膜的聚酰亚胺膜之间的黏着性欠佳。此处,黏着层通常由有害重金属(诸如铬或镍)制成,且接着将铜沉积于其上。黏着层增加程序的数目,且使用此有害材料可造成稳定性及环境污染方面的严重问题。
另外,藉由溅镀程序准备的挠性覆铜板在其表面上展现欠佳的沉积均匀性,且在表面上经常观察到许多针孔。同样地,针孔可造成若干问题,包含(例如)镀铜表面的裂缝、归因于施加于电镀表面上的应力而对电镀表面的损坏、电镀期间电镀表面的分层及剥离、膜损坏等。
另外,诸如针孔或突起的缺陷亦可造成诸如当由客户进行图案化程序时的电短路或电开路的问题,从而导致降低程序良率的致命缺点。
[先前技术文献]
[专利文献]
(专利文献1)韩国专利公开案第10-2014-0070429号
(专利文献2)韩国专利注册第10-1681663号
(专利文献3)韩国专利注册第10-2011-0002838号
发明内容
技术问题
本发明的一实施例提供一种具有每单位表面减少数目的针孔及突起的挠性覆金属板。
本发明的另一实施例提供一种包括该挠性覆金属板的物品。
本发明的另一实施例提供一种准备该挠性覆金属板的方法。
技术方案
本发明的一样态提供一种挠性覆金属板,其包括:
基材层;
第一金属薄膜层,其安置于该基材层上;以及
第二金属薄膜层,其安置于该第一金属薄膜层上,其中
该挠性覆金属板具有每单位表面积(m2)不超过100个针孔缺陷及不超过100个突起,该等突起具有大于1μm且小于2μm的高度。
该第一金属薄膜层可包含镍。
该第二金属薄膜层可包含铜、金、银、钴、铝、铁、镍、铬、其混合物或其合金。
该第二金属薄膜层可包含6μm或更小的厚度。
本发明的另一样态提供
一种物品,其包含上文陈述的该挠性覆金属板。
该物品可为印刷电路基板或显示器装置。
本发明的另一样态提供一种准备该挠性覆金属板的方法,该方法包括以下步骤:
提供基材层;
藉由无电镀在该基材层上形成第一金属薄膜层;
热处理该经形成的第一金属薄膜层;以及
藉由电镀在该经热处理的第一金属薄膜层上形成第二金属薄膜层。
可在30℃至180℃的范围中的温度下执行该第一金属薄膜层的该热处理达20秒钟至80秒钟。
有益效果
根据本发明一实施例的该挠性覆金属板具有每单位表面积减少数目的针孔及突起,借此当在金属箔表面上形成清晰节距电路图案时抑制形成缺陷出现。
附图简单说明
图1是根据本发明一实施例的挠性覆金属板的横截面视图。
图2是表示形成于在实施例1及2中准备的挠性覆金属板的铜箔表面上的针孔及突起的数目的图表。
图3是表示形成于在比较例1及2中准备的挠性覆金属板的铜箔表面上的针孔及突起的数目的图表。
图4是展示实施例1中准备的挠性覆金属板的铜箔表面的状态的照片。
图5是展示实施例2中准备的挠性覆金属板的铜箔表面的状态的照片。
图6是展示比较例1中准备的挠性覆金属板的铜箔表面的状态的照片。
图7是展示比较例2中准备的挠性覆金属板的铜箔表面的状态的照片。
实施方式
在下文中,将进一步详细描述根据本发明一实施例的挠性覆金属板。
如本文使用,术语“针孔”或“针孔缺陷”是指形成于挠性覆金属板的最外金属薄膜层(即,第二金属薄膜层)上的容许光通过其中的通孔。
又如本文使用,术语“突起”或“突起缺陷”是指形成于挠性覆金属板的最外金属薄膜层(即,第二金属薄膜层)上的突起部分。
根据一实施例的挠性覆金属板包含基材层、第一金属薄膜层及第二金属薄膜层。
该挠性覆金属板(具体言之,第二金属薄膜层)可具有每单位表面积(m2)不超过100个针孔缺陷及不超过100个突起,该等突起具有大于1μm且小于2μm的高度。因此,当在第二金属薄层的表面上形成精细节距电路图案时,可藉由解决由针孔或突起造成的蚀刻异常而显著改良品质稳定性。
该基材层可包含绝缘树脂。
该第一金属薄膜层可包含镍。
该第一金属薄膜层可具有在0.01至5μm、0.01至3μm或0.03至2μm的范围中的厚度,且凭借此等范围,可改良金属沉积及相对于基材层的黏着性。
该第二金属薄膜层可包括铜、金、银、钴、铝、铁、镍、铬或其混合物或其合金。
该第二金属薄膜层可包含6μm或更小、4μm或更小、3μm或更小或2μm或更小的厚度。
该挠性覆金属板可进一步包含安置于基材层与第一金属薄膜层之间的黏附层。
图1是根据本发明一实施例的挠性覆金属板10的横截面视图。
参考图1,根据本发明一实施例的挠性覆金属板10包含基材层11、第一金属薄膜层12及第二金属薄膜层13,其等以该顺序循序安置。
挠性覆金属板10可进一步包含安置于基材层11与第一金属薄膜层12之间的黏附层(未图示)。
再次参考图1,挠性覆金属板10也可包含基材层11、第一金属薄膜层12'及第二金属薄膜层13',其等以该顺序循序安置。
挠性覆金属板10可进一步包含安置于基材层11与第一金属薄膜层12'之间的黏附层(未展示)。
本发明的另一实施例提供一种包括该挠性覆金属板的物品。
该物品可为印刷电路基板或显示器装置。
在下文中,将详细描述准备根据本发明一实施例的挠性覆金属板的方法。
准备根据本发明一实施例的挠性覆金属板的方法包含下列步骤:提供基材层(S10);藉由无电镀在该基材层上形成第一金属薄膜层(S20);热处理该经形成的第一金属薄膜层(S30);及藉由电镀在该经热处理的第一金属薄膜层上形成第二金属薄膜层(S40)。
在提供基材层(S10)时,例如可通过将作为聚酰亚胺前体的聚酰胺酸挤出来形成膜,并热处理该膜以用于将聚酰胺酸酰亚胺化而制备包含聚酰亚胺树脂的基材层。
可使基材层干燥以移除水分及残余气体。如一实施例,干燥化可藉由在正常压力下的辊对辊(roll-to-roll)加热执行或藉由在真空大气下使用红外线(IR)加热器而进行。
在第一金属薄膜层形成步骤(S20)中,第一金属薄膜层可藉由使用含有3至50g/L的浓度的水溶性镍盐的电镀溶液的无电镀而形成。
该电镀溶液可包含水溶性镍盐、还原剂及错合剂。
该水溶性镍盐可包括硫酸镍、氯化镍、次磷酸镍、镍盐、乙酸镍、苹果酸镍或其组合。
该水溶性镍盐可含于3至50g/L、3至35g/L或3至15g/L的浓度的该电镀溶液中,且凭借此等范围,水溶性镍盐可展现镀镍涂层的极佳可流动性及高镍析出速度,且镀镍涂层上坑的出现可减少。
该还原剂可包括次磷酸盐,诸如次磷酸钠或次磷酸钾;硼氢化合物,诸如硼氢化钠或硼氢化钾;胺硼烷化合物,诸如二甲胺硼烷(DMAB)、三甲胺硼烷或三乙胺硼烷;或其组合。
该电镀溶液中的该还原剂的浓度可根据所使用的还原剂的种类而变化。
当该还原剂是次磷酸钠时,该还原剂的浓度在20至50g/L的范围中,且当该还原剂是DMAB时,该还原剂的浓度在1至10g/L或3至5g/L的范围中。当各自还原剂在上述浓度范围内时,其具有避免诸如电镀溶液的分解或膜形成的阻滞的潜在问题的效应。
该错合剂可防止镍化合物的沉淀且控制镍的析出反应。
该错合剂的实施例可包含:二羧酸,诸如苹果酸、琥珀酸、酒石酸、丙二酸、草酸或己二酸;氨基羧酸,诸如甘氨酸、麸胺酸、天冬氨酸或丙氨酸;乙二胺衍生物,诸如乙二胺四乙酸、N-羟乙基乙二胺-N,N',N'-三乙酸(Versene,Dow chemical)、N,N,N',N'四羟基乙二胺(Quadrol,BASF);膦酸,诸如1-羟基乙烷-1,1-二膦酸或乙二胺四亚甲基膦酸;其水溶性盐;或其组合。
该错合剂可含于0.001mol/L至2mol/L或0.002mol/L至1mol/L的浓度的该电镀溶液中,且凭借此等范围,可防止电镀溶液的分解及氢氧化镍的沉淀。
另外,该电镀溶液可进一步包含由化学式1表示的含硫苯并噻唑基化合物:
[化学式1]
其中X表示具有两个或两个以上碳原子的烷基或其盐,且可具有取代基。即,X中的氢原子可由除了氢以外的任何元素或任意官能基替换。
该电镀溶液中含有的含硫苯并噻唑基化合物的含量可在0.1至1g/L的范围中,且凭借此范围,可获得极佳的涂布灵活性。
另外,该电镀溶液可进一步包含稳定剂。
该稳定剂可包含:无机化合物,其包括Pb化合物(诸如乙酸铅)或Bi化合物(诸如乙酸铋);有机化合物(诸如丁炔二醇);或其组合。
该电镀溶液可具有4至5的pH值水准,且在此范围内,可防止电镀溶液的分解且可达成稳定析出速度。
准备该挠性覆金属板的方法可进一步包含在基材层提供步骤(S10)与第一金属薄膜层形成步骤(S20)之间在该基材层上形成黏附层的步骤。
执行该第一金属薄膜层热处理步骤(S30)以藉由移除杂质(诸如在该第一金属薄膜层形成步骤(S20)中形成的该第一金属薄膜层中的残余有机材料及气体)以防止针孔或突起缺陷因电镀该第二金属薄膜层中产生的起泡或气泡而出现在该第二金属薄膜层的一表面上。
可在30℃至180℃的范围中的温度下执行该第一金属薄膜层热处理步骤(S30)达20秒钟至80秒钟。若在上文陈述的温度及时间范围内执行热处理,则可达成无表面缺陷(诸如针孔或突起)的良好挠性覆铜板。
在该第二金属薄膜层形成步骤(S40)中,可藉由此项技术中广泛利用的一般方法执行电镀。例如,可使用含有硫酸铜及硫酸作为主要组份的电镀溶液执行电镀,借此在第一金属薄膜层上形成第二金属薄膜层。
例如,可使用含有15至40g/L、15至38g/L或17至36g/L的浓度的铜的电镀溶液执行该电镀。
另外,在该电镀期间,电镀溶液可维持在22℃至37℃、25℃至35℃或27℃至34℃的范围的温度,且凭借此等范围,轻易形成电镀层且可改良生产率。
此外,用于改良生产率及表面均匀性的已知添加剂(光亮剂、整平剂、载剂或缓和剂)可添加至该电镀溶液。
另外,该电镀可在于0.1至20A/m2、0.1至17A/m2或0.3至15A/m2的范围中的电流密度的条件下执行电镀,且凭借此等范围,轻易形成第二金属薄膜层且可改良生产率。
在本文中,本发明将参考实施例进一步详细描述,但不限于此。
实施例1:挠性覆铜板的准备
首先,将25μm厚的绝缘聚酰亚胺膜(Kapton 100ENC,TDC)用作基材层。
接着,藉由无电镀将镍沉积于经准备基材层上以形成0.1μm厚的镍薄膜层。此处,无电镀是一种用于藉由重复包含在聚酰亚胺膜的平坦表面水平对准的状态中将聚酰亚胺膜浸润于镀镍浴中且将聚酰亚胺膜从镀镍浴取出的程序而执行电镀的方法。
在下文中,在40℃的温度下热处理所形成的镍薄膜层达60秒。
紧接在该热处理之后,藉由电镀在镍薄膜层上形成2μm厚的铜薄膜层。另外,将藉由添加氯及其他添加剂(包含整平剂、光亮剂及载剂)至硫酸铜水溶液而获得的溶液用作用于该电镀的电镀溶液。
因此,获得包含镍薄膜层及铜薄膜层(其等以该顺序蓄奴安置于聚酰亚胺膜的一个表面上)且包含镍薄膜层及铜薄膜层(其等以该顺序循序安置于聚酰亚胺膜的另一表面上)的挠性覆铜板,如图1中展示的挠性覆铜板。
实施例2:挠性覆铜板的准备
以与实施例1中相同的方式准备挠性覆铜板,惟在该实施例1中在藉由无电镀形成镍薄膜层,且在40℃的温度下热处理所形成的镍薄膜层达60秒之后(如同在实施例1中),将经热处理的镍薄膜层留在室温(约25℃)下达24小时,随后藉由电镀在镍薄膜层上形成铜薄膜层。
比较例1:挠性覆铜板的准备
首先,将25μm厚的绝缘聚酰亚胺膜(Kapton 100ENC,TDC)用作基材层。
接着,藉由无电镀将镍沉积于经准备基材层上以形成0.1μm厚的镍薄膜层。此外,无电镀是一种用于藉由重复包含在聚酰亚胺膜的平坦表面水平对准的状态中将聚酰亚胺膜浸润于镀镍浴中且将聚酰亚胺膜从镀镍浴取出的程序而执行电镀的方法。
此后,在不热处理经形成的镍薄膜层,且在不将经形成的镍薄膜层留在室温下达一时间段的情况下,紧接在形成镍薄膜层之后,藉由电镀在经形成的镍薄膜层上形成2μm厚的铜薄膜层。另外,将藉由添加氯及其他添加剂(包含整平剂、光亮剂及载剂)至硫酸铜水溶液而获得的溶液用作用于电镀的电镀溶液。
因此,获得挠性覆铜板,该挠性覆铜板包含镍薄膜层及铜薄膜层(其等以该顺序循序安置于聚酰亚胺膜的一个表面上)且包含镍薄膜层及铜薄膜层(其等以该顺寻循序安置于聚酰亚胺膜的另一表面上),如图1中展示的挠性覆铜板。
比较例2:挠性覆铜板的准备
以与比较例1中相同的方法准备挠性覆铜板,惟在该比较例1中在藉由无电镀形成镍薄膜层之后,在不热处理所形成的镍薄膜层的情况下,但将经形成的镍薄膜层留在室温(约25℃)下达24小时,随后在该镍薄膜层上形成铜薄膜层。
评估实施例
以下列方式量测在实施例1及2及比较例1及2中准备的挠性覆铜板的物理性质,且在表1及图2至图7中总结其等的量测结果。
评估实施例1:突起的量测
将该挠性覆铜板的各者切割成250mm×50mm大小以产生各测试块,且使用离线测试块缺陷计量系统(由Ajuhitek Inc.制造的AVS-900C)执行铜薄膜层的表面测试,标记突起缺陷,且计数使用雷射显微镜(由Keyence Corp.制造的VK-8550)量测的高度大于1μm且小于2μm的突起缺陷的数目。
评估实施例2:针孔量测
将该挠性覆铜板的各者切割成156mm×300mm大小以产生各测试块,且毯覆性蚀刻与待量测的表面相对的测试块的两个表面的一者(即,对应于图1的第一金属薄膜层12'及第二金属薄膜层13'的表面)以用于量测针孔,且量测针孔缺陷的数目,藉由使用卤素灯的针孔测试器(由Toray Advanced Materials Inc.制造)用裸眼观察穿过膜的针孔而计数针孔缺陷。
[表1]
项目 | 实施例1 | 实施例2 | 比较例1 | 比较例2 |
突起数目 | 0(0) | 1(80) | 104(8,320) | 8(560) |
针孔数目 | 3(64) | 4(86) | 260(5,460) | 20(420) |
*在图1中,括号中的数是指指示每单位表面积(m2)的针孔或突起数目的转换值。
参考表1及图2及图3,实施例1及2中准备的挠性覆铜板具有远少于比较例1及2中准备的挠性覆铜板的针孔。详细言之,实施例1及2中准备的挠性覆铜板每单位表面积(m2)具有不超过100个针孔缺陷及不超过100个突起缺陷。然而,比较例1及2中准备的挠性覆铜板具有每单位表面积(m2)400或更多针孔缺陷及500或更多的突起缺陷。
评估实施例3:表面照片
自上方拍摄该挠性覆铜板的各者且接着用笔标记表面有缺陷部分,且在图4至7中展示其等的结果。图4是展示实施例1中准备的挠性覆金属板中的铜箔表面的状态的照片,图5是展示实施例2中准备的挠性覆金属板中的铜箔表面的状态的照片,图6是展示比较例1中准备的挠性覆金属板中的铜箔表面的状态的照片,且图7是展示比较例2中准备的挠性覆金属板中的铜箔表面的状态的照片。
参考图4及图5,确认实施例1及2中准备的挠性覆铜板具有非常少量的表面缺陷。
相比之下,参考图6及图7,确认比较例1及2中准备的挠性覆铜板具有非常多的表面缺陷。
虽然已经参考附图描述一个或多个例示性实施例,但本文描述的实施例已仅藉由实施例的方式呈现,且熟习此项技术者将了解,可对以上描述做出各种改变及其他等效实施例。因此,应由所附权利要求书的精神及范畴定义本发明。
Claims (7)
1.一种挠性覆金属板,其由下列构成:
基材层;
第一金属薄膜层,其安置于该基材层上;及
第二金属薄膜层,其安置于该第一金属薄膜层上,
其中所述基材层包含聚酰亚胺树脂,且如下制备:
将作为聚酰亚胺前体的聚酰胺酸挤出来形成膜,并
热处理该膜以用于将聚酰胺酸酰亚胺化;
其中该挠性覆金属板具有每m2不超过100个针孔缺陷及不超过100个突起,该突起具有大于1μm且小于2μm的高度;且
其中所述针孔是容许光通过其中的通孔。
2.如权利要求1所述的挠性覆金属板,其中,该第一金属薄膜层包含镍。
3.如权利要求1所述的挠性覆金属板,其中,该第二金属薄膜层包括铜、金、银、钴、铝、铁、镍、铬、其混合物或其合金。
4.如权利要求1所述的挠性覆金属板,其中,该第二金属薄膜层具有6μm或更小的厚度。
5.一种包括如权利要求1至4中任意一项所述的挠性覆金属板的物品。
6.如权利要求5所述的物品,其中,该物品是为印刷电路基板或显示器装置。
7.一种准备如权利要求1至4中任意一项所述的挠性覆金属板的方法,该方法由下列构成:
提供基材层;
使基材层干燥以移除水分及残余气体;
藉由无电镀在该基材层上形成第一金属薄膜层;
热处理该经形成的第一金属薄膜层;以及
藉由电镀在该经处理的第一金属薄膜层上形成第二金属薄膜层,
其中所述基材层如下制备:
将作为聚酰亚胺前体的聚酰胺酸挤出来形成膜,并
热处理该膜以用于将聚酰胺酸酰亚胺化;且
其中在30℃至180℃的范围中的温度下执行该第一金属薄膜层的该热处理达20秒钟至80秒钟。
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