CN113225496A - 摄像元件和摄像装置 - Google Patents

摄像元件和摄像装置 Download PDF

Info

Publication number
CN113225496A
CN113225496A CN202110446873.5A CN202110446873A CN113225496A CN 113225496 A CN113225496 A CN 113225496A CN 202110446873 A CN202110446873 A CN 202110446873A CN 113225496 A CN113225496 A CN 113225496A
Authority
CN
China
Prior art keywords
signal
substrate
unit
photoelectric conversion
arithmetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110446873.5A
Other languages
English (en)
Chinese (zh)
Inventor
松本繁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of CN113225496A publication Critical patent/CN113225496A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN202110446873.5A 2016-03-24 2017-02-27 摄像元件和摄像装置 Pending CN113225496A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016060001 2016-03-24
JP2016-060001 2016-03-24
CN201780032301.4A CN109155832B (zh) 2016-03-24 2017-02-27 摄像元件和摄像装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201780032301.4A Division CN109155832B (zh) 2016-03-24 2017-02-27 摄像元件和摄像装置

Publications (1)

Publication Number Publication Date
CN113225496A true CN113225496A (zh) 2021-08-06

Family

ID=59900001

Family Applications (4)

Application Number Title Priority Date Filing Date
CN202110446873.5A Pending CN113225496A (zh) 2016-03-24 2017-02-27 摄像元件和摄像装置
CN202110447255.2A Pending CN113225497A (zh) 2016-03-24 2017-02-27 摄像元件和摄像装置
CN202110447278.3A Pending CN113225498A (zh) 2016-03-24 2017-02-27 摄像元件和摄像装置
CN201780032301.4A Active CN109155832B (zh) 2016-03-24 2017-02-27 摄像元件和摄像装置

Family Applications After (3)

Application Number Title Priority Date Filing Date
CN202110447255.2A Pending CN113225497A (zh) 2016-03-24 2017-02-27 摄像元件和摄像装置
CN202110447278.3A Pending CN113225498A (zh) 2016-03-24 2017-02-27 摄像元件和摄像装置
CN201780032301.4A Active CN109155832B (zh) 2016-03-24 2017-02-27 摄像元件和摄像装置

Country Status (5)

Country Link
US (4) US10879298B2 (enExample)
EP (1) EP3435658B1 (enExample)
JP (4) JP6822468B2 (enExample)
CN (4) CN113225496A (enExample)
WO (1) WO2017163774A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113225496A (zh) * 2016-03-24 2021-08-06 株式会社尼康 摄像元件和摄像装置
EP3439289B1 (en) * 2016-03-29 2021-11-17 Nikon Corporation Imaging element and imaging device
WO2017169480A1 (ja) 2016-03-31 2017-10-05 株式会社ニコン 撮像素子および撮像装置
WO2020229979A1 (en) * 2019-05-10 2020-11-19 Sony Advanced Visual Sensing Ag Nmos comparator for image sensor pixel
JP2021082775A (ja) * 2019-11-22 2021-05-27 株式会社半導体エネルギー研究所 撮像装置およびその作製方法
JP7630986B2 (ja) * 2020-12-24 2025-02-18 キヤノン株式会社 光電変換装置、光電変換システム、移動体
JP7540551B2 (ja) * 2022-08-17 2024-08-27 株式会社三洋物産 遊技機
JP7540549B2 (ja) * 2022-08-17 2024-08-27 株式会社三洋物産 遊技機
JP7540548B2 (ja) * 2022-08-17 2024-08-27 株式会社三洋物産 遊技機
JP7540550B2 (ja) * 2022-08-17 2024-08-27 株式会社三洋物産 遊技機

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001094888A (ja) * 1999-09-22 2001-04-06 Canon Inc 撮像装置
JP3959925B2 (ja) * 2000-04-10 2007-08-15 ソニー株式会社 画像処理装置及び撮像素子
WO2003001567A2 (en) 2001-06-20 2003-01-03 R3 Logic, Inc. High resolution, low power, wide dynamic range imager with embedded pixel processor and dram storage
JP2006186862A (ja) 2004-12-28 2006-07-13 Nidec Copal Corp 画像読取装置
KR100782463B1 (ko) 2005-04-13 2007-12-05 (주)실리콘화일 3차원 구조를 갖는 이미지 센서의 분리형 단위화소 및 그제조방법
EP2190185B1 (en) * 2007-09-05 2013-11-06 Tohoku University Solid-state image sensor
JP5178458B2 (ja) * 2008-10-31 2013-04-10 キヤノン株式会社 固体撮像装置、撮像システム、および、固体撮像装置の駆動方法
JP4835710B2 (ja) * 2009-03-17 2011-12-14 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、固体撮像装置の駆動方法、及び電子機器
JP5685898B2 (ja) 2010-01-08 2015-03-18 ソニー株式会社 半導体装置、固体撮像装置、およびカメラシステム
JP2011172121A (ja) 2010-02-19 2011-09-01 Sony Corp 固体撮像素子およびカメラシステム
EP2583303A1 (en) 2010-06-17 2013-04-24 MOSAID Technologies Incorporated Semiconductor device with through-silicon vias
JP6041495B2 (ja) * 2011-03-24 2016-12-07 キヤノン株式会社 撮像装置及び欠陥画素の判定方法
US8637800B2 (en) * 2011-04-19 2014-01-28 Altasens, Inc. Image sensor with hybrid heterostructure
JP5820620B2 (ja) 2011-05-25 2015-11-24 オリンパス株式会社 固体撮像装置、撮像装置、および信号読み出し方法
US8890047B2 (en) 2011-09-21 2014-11-18 Aptina Imaging Corporation Stacked-chip imaging systems
JP2013090139A (ja) 2011-10-18 2013-05-13 Sony Corp 撮像素子およびカメラシステム
JP6021360B2 (ja) * 2012-03-07 2016-11-09 キヤノン株式会社 撮像装置、撮像システム、および撮像装置の駆動方法。
US8957358B2 (en) * 2012-04-27 2015-02-17 Taiwan Semiconductor Manufacturing Company, Ltd. CMOS image sensor chips with stacked scheme and methods for forming the same
WO2013164915A1 (ja) * 2012-05-02 2013-11-07 株式会社ニコン 撮像装置
TWI583195B (zh) * 2012-07-06 2017-05-11 新力股份有限公司 A solid-state imaging device and a solid-state imaging device, and an electronic device
JP2014060573A (ja) 2012-09-18 2014-04-03 Sony Corp 固体撮像素子、制御方法、および電子機器
JP6164869B2 (ja) 2013-02-26 2017-07-19 キヤノン株式会社 撮像装置、撮像システム、撮像装置の駆動方法
JP2015023391A (ja) 2013-07-18 2015-02-02 株式会社ニコン 固体撮像装置
JP2015041838A (ja) * 2013-08-21 2015-03-02 株式会社ニコン 撮像素子および撮像装置
EP3054664B1 (en) * 2013-09-30 2022-06-29 Nikon Corporation Electronic device, method for controlling electronic device, and control program
KR102104564B1 (ko) * 2013-11-21 2020-04-24 삼성전자주식회사 디지털 상관 이중 샘플링 회로 및 이를 포함하는 이미지 센서
JP2015109502A (ja) * 2013-12-03 2015-06-11 ソニー株式会社 イメージセンサおよびイメージセンサの動作方法、撮像装置、電子機器、並びにプログラム
JP2015109503A (ja) * 2013-12-03 2015-06-11 ソニー株式会社 イメージセンサおよびイメージセンサの動作方法、撮像装置、電子機器、並びにプログラム
JP6314477B2 (ja) 2013-12-26 2018-04-25 ソニー株式会社 電子デバイス
JP6407083B2 (ja) * 2015-03-30 2018-10-17 キヤノン株式会社 光電変換装置、および、光電変換システム
US10896923B2 (en) * 2015-09-18 2021-01-19 Semiconductor Energy Laboratory Co., Ltd. Method of operating an imaging device with global shutter system
KR102437588B1 (ko) * 2015-09-22 2022-08-30 삼성전자주식회사 영상 캡처 장치
US10020336B2 (en) * 2015-12-28 2018-07-10 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device using three dimentional (3D) integration
CN113225496A (zh) 2016-03-24 2021-08-06 株式会社尼康 摄像元件和摄像装置
EP3439289B1 (en) 2016-03-29 2021-11-17 Nikon Corporation Imaging element and imaging device
WO2017169480A1 (ja) * 2016-03-31 2017-10-05 株式会社ニコン 撮像素子および撮像装置
KR102527110B1 (ko) * 2016-05-23 2023-05-03 에스케이하이닉스 주식회사 아날로그-디지털 변환 장치 및 그 동작 방법
EP4228278B1 (en) * 2022-02-15 2025-09-17 Canon Kabushiki Kaisha Pixel array correction and photoelectric conversion system
JP2024035622A (ja) * 2022-09-02 2024-03-14 キヤノン株式会社 光電変換装置、光電変換システムおよび光電変換方法

Also Published As

Publication number Publication date
EP3435658A1 (en) 2019-01-30
JP7740301B2 (ja) 2025-09-17
JP2025122211A (ja) 2025-08-20
EP3435658A4 (en) 2019-09-18
CN113225498A (zh) 2021-08-06
EP3435658B1 (en) 2024-01-03
US11557624B2 (en) 2023-01-17
US10879298B2 (en) 2020-12-29
CN113225497A (zh) 2021-08-06
US20190081093A1 (en) 2019-03-14
US20210074746A1 (en) 2021-03-11
WO2017163774A1 (ja) 2017-09-28
US11978757B2 (en) 2024-05-07
CN109155832B (zh) 2021-05-14
US20230111474A1 (en) 2023-04-13
CN109155832A (zh) 2019-01-04
US20240250108A1 (en) 2024-07-25
JP7310837B2 (ja) 2023-07-19
JP6822468B2 (ja) 2021-01-27
JPWO2017163774A1 (ja) 2019-01-31
JP2021061438A (ja) 2021-04-15
JP2023123602A (ja) 2023-09-05
US12501726B2 (en) 2025-12-16

Similar Documents

Publication Publication Date Title
CN109155832B (zh) 摄像元件和摄像装置
JP7491335B2 (ja) 撮像素子、及び撮像装置
CN109196647B (zh) 摄像元件以及摄像装置
JP7103388B2 (ja) 撮像素子および撮像装置
CN113812140B (zh) 摄像元件及摄像装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination