CN113214588A - 可雷射离型的组成物、其积层体和雷射离型方法 - Google Patents
可雷射离型的组成物、其积层体和雷射离型方法 Download PDFInfo
- Publication number
- CN113214588A CN113214588A CN202110075829.8A CN202110075829A CN113214588A CN 113214588 A CN113214588 A CN 113214588A CN 202110075829 A CN202110075829 A CN 202110075829A CN 113214588 A CN113214588 A CN 113214588A
- Authority
- CN
- China
- Prior art keywords
- group
- laser
- composition
- containing organic
- organic group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 title claims description 17
- 239000000463 material Substances 0.000 claims abstract description 56
- 125000000962 organic group Chemical group 0.000 claims abstract description 35
- 239000002904 solvent Substances 0.000 claims abstract description 27
- 150000004292 cyclic ethers Chemical group 0.000 claims abstract description 20
- 239000000654 additive Substances 0.000 claims abstract description 16
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 16
- 239000004925 Acrylic resin Substances 0.000 claims abstract description 14
- 229920000178 Acrylic resin Polymers 0.000 claims abstract description 14
- 230000000996 additive effect Effects 0.000 claims abstract description 14
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000002318 adhesion promoter Substances 0.000 claims abstract description 13
- -1 acryl Chemical group 0.000 claims description 25
- 229920005989 resin Polymers 0.000 claims description 20
- 239000011347 resin Substances 0.000 claims description 20
- 150000001875 compounds Chemical class 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 12
- 239000002313 adhesive film Substances 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 239000003431 cross linking reagent Substances 0.000 claims description 8
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 7
- 229920001296 polysiloxane Polymers 0.000 claims description 7
- 239000002131 composite material Substances 0.000 claims description 6
- 125000004185 ester group Chemical group 0.000 claims description 6
- 150000003335 secondary amines Chemical group 0.000 claims description 6
- 150000003512 tertiary amines Chemical group 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 5
- 125000003700 epoxy group Chemical group 0.000 claims description 5
- 125000001183 hydrocarbyl group Chemical group 0.000 claims description 5
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 125000003566 oxetanyl group Chemical group 0.000 claims description 4
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical group NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 claims description 3
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical group C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 claims description 3
- 125000004103 aminoalkyl group Chemical group 0.000 claims description 3
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 3
- 125000001424 substituent group Chemical group 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 6
- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 abstract description 5
- 125000001302 tertiary amino group Chemical group 0.000 abstract description 5
- 239000000178 monomer Substances 0.000 description 14
- 238000012360 testing method Methods 0.000 description 9
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 5
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000002791 soaking Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- LDHQCZJRKDOVOX-NSCUHMNNSA-N crotonic acid Chemical compound C\C=C\C(O)=O LDHQCZJRKDOVOX-NSCUHMNNSA-N 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 238000010023 transfer printing Methods 0.000 description 3
- 229920002818 (Hydroxyethyl)methacrylate Polymers 0.000 description 2
- KELRPMIDNCUVFW-FPLPWBNLSA-N (Z)-2-(4-prop-2-enoyloxybutyl)but-2-enedioic acid Chemical compound OC(=O)\C=C(C(O)=O)\CCCCOC(=O)C=C KELRPMIDNCUVFW-FPLPWBNLSA-N 0.000 description 2
- XLPJNCYCZORXHG-UHFFFAOYSA-N 1-morpholin-4-ylprop-2-en-1-one Chemical compound C=CC(=O)N1CCOCC1 XLPJNCYCZORXHG-UHFFFAOYSA-N 0.000 description 2
- STMDPCBYJCIZOD-UHFFFAOYSA-N 2-(2,4-dinitroanilino)-4-methylpentanoic acid Chemical compound CC(C)CC(C(O)=O)NC1=CC=C([N+]([O-])=O)C=C1[N+]([O-])=O STMDPCBYJCIZOD-UHFFFAOYSA-N 0.000 description 2
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 2
- VAZQKPWSBFZARZ-UHFFFAOYSA-N 2-(2-phenylphenoxy)ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOC1=CC=CC=C1C1=CC=CC=C1 VAZQKPWSBFZARZ-UHFFFAOYSA-N 0.000 description 2
- JKNCOURZONDCGV-UHFFFAOYSA-N 2-(dimethylamino)ethyl 2-methylprop-2-enoate Chemical compound CN(C)CCOC(=O)C(C)=C JKNCOURZONDCGV-UHFFFAOYSA-N 0.000 description 2
- DPBJAVGHACCNRL-UHFFFAOYSA-N 2-(dimethylamino)ethyl prop-2-enoate Chemical compound CN(C)CCOC(=O)C=C DPBJAVGHACCNRL-UHFFFAOYSA-N 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- BNCADMBVWNPPIZ-UHFFFAOYSA-N 2-n,2-n,4-n,4-n,6-n,6-n-hexakis(methoxymethyl)-1,3,5-triazine-2,4,6-triamine Chemical compound COCN(COC)C1=NC(N(COC)COC)=NC(N(COC)COC)=N1 BNCADMBVWNPPIZ-UHFFFAOYSA-N 0.000 description 2
- FMGBDYLOANULLW-UHFFFAOYSA-N 3-isocyanatopropyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)CCCN=C=O FMGBDYLOANULLW-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- SUAKHGWARZSWIH-UHFFFAOYSA-N N,N‐diethylformamide Chemical compound CCN(CC)C=O SUAKHGWARZSWIH-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 125000002723 alicyclic group Chemical group 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 125000002843 carboxylic acid group Chemical group 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- LJZJMIZQMNDARW-UHFFFAOYSA-N decan-3-yl 2-methylprop-2-enoate Chemical compound CCCCCCCC(CC)OC(=O)C(C)=C LJZJMIZQMNDARW-UHFFFAOYSA-N 0.000 description 2
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 2
- 238000010559 graft polymerization reaction Methods 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000004843 novolac epoxy resin Substances 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 230000000379 polymerizing effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000011342 resin composition Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 125000005373 siloxane group Chemical group [SiH2](O*)* 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 2
- MMEJYPZZFYTVLJ-WAYWQWQTSA-N (z)-2-(2-prop-2-enoyloxyethyl)but-2-enedioic acid Chemical compound OC(=O)\C=C(C(O)=O)\CCOC(=O)C=C MMEJYPZZFYTVLJ-WAYWQWQTSA-N 0.000 description 1
- AVQQQNCBBIEMEU-UHFFFAOYSA-N 1,1,3,3-tetramethylurea Chemical compound CN(C)C(=O)N(C)C AVQQQNCBBIEMEU-UHFFFAOYSA-N 0.000 description 1
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 description 1
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 description 1
- NQUXRXBRYDZZDL-UHFFFAOYSA-N 1-(2-prop-2-enoyloxyethyl)cyclohexane-1,2-dicarboxylic acid Chemical compound OC(=O)C1CCCCC1(CCOC(=O)C=C)C(O)=O NQUXRXBRYDZZDL-UHFFFAOYSA-N 0.000 description 1
- ZVUAMUKZHFTJGR-UHFFFAOYSA-N 1-piperazin-1-ylprop-2-en-1-one Chemical compound C=CC(=O)N1CCNCC1 ZVUAMUKZHFTJGR-UHFFFAOYSA-N 0.000 description 1
- LSYXXLMBRSSBGS-UHFFFAOYSA-N 2,4,6-tris(hydroxymethyl)phenol Chemical compound OCC1=CC(CO)=C(O)C(CO)=C1 LSYXXLMBRSSBGS-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical group COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NHVWLESWGAKUKS-UHFFFAOYSA-N 2-(2-prop-2-enoyloxybutyl)hexanedioic acid Chemical compound C(C=C)(=O)OC(CC(C(=O)O)CCCC(=O)O)CC NHVWLESWGAKUKS-UHFFFAOYSA-N 0.000 description 1
- IEQWWMKDFZUMMU-UHFFFAOYSA-N 2-(2-prop-2-enoyloxyethyl)butanedioic acid Chemical compound OC(=O)CC(C(O)=O)CCOC(=O)C=C IEQWWMKDFZUMMU-UHFFFAOYSA-N 0.000 description 1
- JFWBGEJOEQFGOK-UHFFFAOYSA-N 2-(2-prop-2-enoyloxyethyl)hexanedioic acid Chemical compound OC(=O)CCCC(C(O)=O)CCOC(=O)C=C JFWBGEJOEQFGOK-UHFFFAOYSA-N 0.000 description 1
- CNWUNRHBPXGKPN-UHFFFAOYSA-N 2-(2-prop-2-enoyloxypropyl)hexanedioic acid Chemical compound C(C=C)(=O)OC(CC(C(=O)O)CCCC(=O)O)C CNWUNRHBPXGKPN-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- XKZQKPRCPNGNFR-UHFFFAOYSA-N 2-(3-hydroxyphenyl)phenol Chemical compound OC1=CC=CC(C=2C(=CC=CC=2)O)=C1 XKZQKPRCPNGNFR-UHFFFAOYSA-N 0.000 description 1
- WLIVGKZSWFDOQX-UHFFFAOYSA-N 2-(3-prop-2-enoyloxypropyl)butanedioic acid Chemical compound C(C=C)(=O)OCCCC(C(=O)O)CC(=O)O WLIVGKZSWFDOQX-UHFFFAOYSA-N 0.000 description 1
- SJIXRGNQPBQWMK-UHFFFAOYSA-N 2-(diethylamino)ethyl 2-methylprop-2-enoate Chemical compound CCN(CC)CCOC(=O)C(C)=C SJIXRGNQPBQWMK-UHFFFAOYSA-N 0.000 description 1
- QHVBLSNVXDSMEB-UHFFFAOYSA-N 2-(diethylamino)ethyl prop-2-enoate Chemical compound CCN(CC)CCOC(=O)C=C QHVBLSNVXDSMEB-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Chemical group OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- YQUDMNIUBTXLSX-UHFFFAOYSA-N 2-ethenyl-5-ethylpyridine Chemical compound CCC1=CC=C(C=C)N=C1 YQUDMNIUBTXLSX-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- IEVADDDOVGMCSI-UHFFFAOYSA-N 2-hydroxybutyl 2-methylprop-2-enoate Chemical compound CCC(O)COC(=O)C(C)=C IEVADDDOVGMCSI-UHFFFAOYSA-N 0.000 description 1
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 1
- AKVUWTYSNLGBJY-UHFFFAOYSA-N 2-methyl-1-morpholin-4-ylprop-2-en-1-one Chemical compound CC(=C)C(=O)N1CCOCC1 AKVUWTYSNLGBJY-UHFFFAOYSA-N 0.000 description 1
- KGIGUEBEKRSTEW-UHFFFAOYSA-N 2-vinylpyridine Chemical compound C=CC1=CC=CC=N1 KGIGUEBEKRSTEW-UHFFFAOYSA-N 0.000 description 1
- UXTGJIIBLZIQPK-UHFFFAOYSA-N 3-(2-prop-2-enoyloxyethyl)phthalic acid Chemical compound OC(=O)C1=CC=CC(CCOC(=O)C=C)=C1C(O)=O UXTGJIIBLZIQPK-UHFFFAOYSA-N 0.000 description 1
- UOCXAYCXGRZSHW-UHFFFAOYSA-N 3-(3-prop-2-enoyloxypropyl)phthalic acid Chemical compound OC(=O)C1=CC=CC(CCCOC(=O)C=C)=C1C(O)=O UOCXAYCXGRZSHW-UHFFFAOYSA-N 0.000 description 1
- LVASSRUHWWBGSZ-UHFFFAOYSA-N 3-(4-prop-2-enoyloxybutyl)phthalic acid Chemical compound C(C=C)(=O)OCCCCC1=C(C(C(=O)O)=CC=C1)C(=O)O LVASSRUHWWBGSZ-UHFFFAOYSA-N 0.000 description 1
- PCUPXNDEQDWEMM-UHFFFAOYSA-N 3-(diethylamino)propyl 2-methylprop-2-enoate Chemical compound CCN(CC)CCCOC(=O)C(C)=C PCUPXNDEQDWEMM-UHFFFAOYSA-N 0.000 description 1
- GNSFRPWPOGYVLO-UHFFFAOYSA-N 3-hydroxypropyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCCO GNSFRPWPOGYVLO-UHFFFAOYSA-N 0.000 description 1
- QZPSOSOOLFHYRR-UHFFFAOYSA-N 3-hydroxypropyl prop-2-enoate Chemical compound OCCCOC(=O)C=C QZPSOSOOLFHYRR-UHFFFAOYSA-N 0.000 description 1
- KFDVPJUYSDEJTH-UHFFFAOYSA-N 4-ethenylpyridine Chemical compound C=CC1=CC=NC=C1 KFDVPJUYSDEJTH-UHFFFAOYSA-N 0.000 description 1
- NDWUBGAGUCISDV-UHFFFAOYSA-N 4-hydroxybutyl prop-2-enoate Chemical compound OCCCCOC(=O)C=C NDWUBGAGUCISDV-UHFFFAOYSA-N 0.000 description 1
- XFOFBPRPOAWWPA-UHFFFAOYSA-N 6-hydroxyhexyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCCCCCO XFOFBPRPOAWWPA-UHFFFAOYSA-N 0.000 description 1
- OCIFJWVZZUDMRL-UHFFFAOYSA-N 6-hydroxyhexyl prop-2-enoate Chemical compound OCCCCCCOC(=O)C=C OCIFJWVZZUDMRL-UHFFFAOYSA-N 0.000 description 1
- 102100026735 Coagulation factor VIII Human genes 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- 101000720524 Gordonia sp. (strain TY-5) Acetone monooxygenase (methyl acetate-forming) Proteins 0.000 description 1
- 101000911390 Homo sapiens Coagulation factor VIII Proteins 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 1
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 1
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- ZWXPDGCFMMFNRW-UHFFFAOYSA-N N-methylcaprolactam Chemical compound CN1CCCCCC1=O ZWXPDGCFMMFNRW-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- YGCOKJWKWLYHTG-UHFFFAOYSA-N [[4,6-bis[bis(hydroxymethyl)amino]-1,3,5-triazin-2-yl]-(hydroxymethyl)amino]methanol Chemical compound OCN(CO)C1=NC(N(CO)CO)=NC(N(CO)CO)=N1 YGCOKJWKWLYHTG-UHFFFAOYSA-N 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 150000003950 cyclic amides Chemical class 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 125000006159 dianhydride group Chemical group 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 150000004662 dithiols Chemical group 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 125000001033 ether group Chemical group 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 229940052303 ethers for general anesthesia Drugs 0.000 description 1
- MHCLJIVVJQQNKQ-UHFFFAOYSA-N ethyl carbamate;2-methylprop-2-enoic acid Chemical compound CCOC(N)=O.CC(=C)C(O)=O MHCLJIVVJQQNKQ-UHFFFAOYSA-N 0.000 description 1
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- GNOIPBMMFNIUFM-UHFFFAOYSA-N hexamethylphosphoric triamide Chemical compound CN(C)P(=O)(N(C)C)N(C)C GNOIPBMMFNIUFM-UHFFFAOYSA-N 0.000 description 1
- VLKZOEOYAKHREP-UHFFFAOYSA-N hexane Substances CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 1
- 125000002768 hydroxyalkyl group Chemical group 0.000 description 1
- 239000001023 inorganic pigment Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 125000005395 methacrylic acid group Chemical group 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 239000012860 organic pigment Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 125000004193 piperazinyl group Chemical group 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 150000007519 polyprotic acids Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007585 pull-off test Methods 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229910021487 silica fume Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229960000834 vinyl ether Drugs 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
- C09D133/04—Homopolymers or copolymers of esters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/56—Coatings, e.g. enameled or galvanised; Releasing, lubricating or separating agents
- B29C33/68—Release sheets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/06—Interconnection of layers permitting easy separation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
- B41M5/40—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used characterised by the base backcoat, intermediate, or covering layers, e.g. for thermal transfer dye-donor or dye-receiver sheets; Heat, radiation filtering or absorbing means or layers; combined with other image registration layers or compositions; Special originals for reproduction by thermography
- B41M5/42—Intermediate, backcoat, or covering layers
- B41M5/44—Intermediate, backcoat, or covering layers characterised by the macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/20—Esters of polyhydric alcohols or phenols, e.g. 2-hydroxyethyl (meth)acrylate or glycerol mono-(meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/541—Silicon-containing compounds containing oxygen
- C08K5/5435—Silicon-containing compounds containing oxygen containing oxygen in a ring
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
- C09D133/04—Homopolymers or copolymers of esters
- C09D133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
- C09D133/062—Copolymers with monomers not covered by C09D133/06
- C09D133/066—Copolymers with monomers not covered by C09D133/06 containing -OH groups
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
- C09D133/04—Homopolymers or copolymers of esters
- C09D133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
- C09D133/062—Copolymers with monomers not covered by C09D133/06
- C09D133/068—Copolymers with monomers not covered by C09D133/06 containing glycidyl groups
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
- C09D133/04—Homopolymers or copolymers of esters
- C09D133/14—Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur or oxygen atoms in addition to the carboxy oxygen
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/40—Adhesives in the form of films or foils characterised by release liners
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/40—Adhesives in the form of films or foils characterised by release liners
- C09J7/405—Adhesives in the form of films or foils characterised by release liners characterised by the substrate of the release liner
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2833/00—Use of polymers of unsaturated acids or derivatives thereof as mould material
- B29K2833/04—Polymers of esters
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2333/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers
- C08J2333/04—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers esters
- C08J2333/14—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers esters of esters containing halogen, nitrogen, sulfur, or oxygen atoms in addition to the carboxy oxygen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2237—Oxides; Hydroxides of metals of titanium
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2265—Oxides; Hydroxides of metals of iron
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/04—Carbon
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/16—Nitrogen-containing compounds
- C08K5/34—Heterocyclic compounds having nitrogen in the ring
- C08K5/3467—Heterocyclic compounds having nitrogen in the ring having more than two nitrogen atoms in the ring
- C08K5/3477—Six-membered rings
- C08K5/3492—Triazines
- C08K5/34922—Melamine; Derivatives thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/541—Silicon-containing compounds containing oxygen
- C08K5/5425—Silicon-containing compounds containing oxygen containing at least one C=C bond
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
- C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/50—Additional features of adhesives in the form of films or foils characterized by process specific features
- C09J2301/502—Additional features of adhesives in the form of films or foils characterized by process specific features process for debonding adherents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2433/00—Presence of (meth)acrylic polymer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Power Engineering (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Laminated Bodies (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Adhesive Tapes (AREA)
- Laser Beam Processing (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Abstract
本发明提供一种可雷射离型的组成物,包括:压克力树脂、遮光材、添加剂和溶剂;其中前述压克力树脂包括含有选自叔胺基和仲胺基的群中至少一种的含氮有机基、含有环醚基的有机基和含有羟基的有机基,前述添加剂至少包括一种密着促进剂。所述可雷射离型的组成物具有优异的基材密着性、可贴合性和耐溶剂性。
Description
技术领域
本发明系关于一种组成物,特别系关于一种可雷射离型的组成物、使用其所形成的积层体和利用所述组成物或所述积层体的雷射离型方法。
背景技术
近年来,为了因应市场要求效能更快速、更便宜以及尺寸更小的电子产品,扇出型晶圆级封装(Fan Out Wafer Level Package,FOWLP)、2.5维度积体电路(2.5D IC)以及三维积体电路(3D IC)等技术早已成为半导体封装的主流。为了不让薄化硅晶圆的翘曲以及易脆等特性影响后续的制程,载体(Carrier)的使用已变成不可或缺的一个步骤。然而,在产品尺寸更小的需求下,载体最终必须要移除,因此封装技术时常伴随着离型层(releasing layer)的使用,也因此创造了离型层的市场。雷射离型虽有较昂贵的设备需求,但有在低温下快速将载体脱离装置的优点,使其跃身为现今主流的离型技术。
而为了使离型层上方能进行不同制程,例如:线路重布(Redistribution Layer)、焊晶(Die bonding)、封胶(Molding)、晶圆研磨、晶片翻转等,且因应各种不同的制程需求,形成离型层的材料需要有优异的基材密着性以及耐溶剂性。然而,在现今技术中,含有遮光材的材料往往因为材料的不连续面增加,而会导致耐溶剂特性下降。
因此,针对上述问题,本发明提供一种具有优异的基材密着性、可贴合性和耐溶剂性的可雷射离型组成物。
发明内容
本发明的一目的在于提供一种可雷射离型的组成物。前述可雷射离型的组成物包括:压克力树脂、遮光材、添加剂和溶剂;其中前述压克力树脂包括含有选自叔胺基和仲胺基的群中至少一种的含氮有机基、含有环醚基的有机基和含有羟基的有机基,前述添加剂至少包括一种密着促进剂。
在本发明的一实施方式中,前述压克力树脂的酸价为小于4mg KOH/g。
在本发明的一实施方式中,前述密着促进剂包括选自乙烯性基团、环氧基和异氰酸酯基中至少一种的硅氧烷化合物。
在本发明的一实施方式中,前述含有选自叔胺基和仲胺基的群中至少一种的含氮有机基,可为但不限于2-(烃基)胺基烃基酯基团、二烃基胺基烃基酯基团、胺基甲酸酯基团、吡啶、哌嗪和吗啉基团中的至少一种。
在本发明的一实施方式中,前述压克力树脂包括至少两种以上具有不同碳数的环的环醚基。
在本发明的一实施方式中,前述环醚基为氧杂环丁烷基、环氧丙基或其组合。
在本发明的一实施方式中,前述遮光材为可使可雷射离型的组成物吸收可见光、红外光或紫外光中至少一波段或阻挡可见光、红外光或紫外光中至少一波段通过的材料。
本发明的另一目的在于提供一种积层体。所述积层体包括一支撑材及以如上述可雷射离型的组成物在所述支撑材上所形成的膜。
本发明另一目的在于提供一种雷射离型方法,包括以下步骤:
S1:提供一支撑材;S2:以如上述可雷射离型的组成物涂布在所述支撑材上并硬化成膜;S3:可在前述膜上形成一加工元件;及S4:以雷射将所述支撑材移除。
在本发明的一实施方式中,前述加工元件为裸晶或线路重布层。
附图说明
图1为根据本发明的一实施例的雷射离型方法的流程示意图。
S1-步骤1;S2-步骤2;S3-步骤3;S4-步骤4;1-支撑材;2-膜;
3-加工元件。
具体实施方式
在详细说明本发明的至少一实施例之前,应当理解的是本发明并非必要受限于其应用在以下描述中的多个示例所举例说明的多个细节,例如,实施例的数量或采用的特定混合比例等。本发明能够为其他的实施例或者以各种方式被实施或实现。
[可雷射离型组成物]
本发明提供一种具有优异的基材密着性、可贴合性、转印性和耐溶剂性的可雷射离型组成物,其包括压克力树脂、遮光材、添加剂和溶剂。以下将就各成分进行详细说明:
[压克力树脂]
为了达成上述功效,本发明所揭露的一种实施方式,其中压克力树脂至少包括含有选自叔胺基和仲胺基的群中至少一种的含氮有机基、含有环醚基的有机基和含有羟基的有机基。
前述含有选自叔胺基和仲胺基的群中至少一种的含氮有机基可为但不限于吡啶基团、哌嗪基团、吗啉基团、2-(烃基)胺基烃基酯基团、二烃基胺基烃基酯基团、胺基甲酸酯基团等,其中前述烃基中任一-CH2-亦可以各自独立为-NH-、-O-或-S-取代,其中各取代基彼此不相连接,具体而言,可使用含有选自叔胺基或仲胺基的群中至少一种的单体进行树脂合成,例如、丙烯酰吗啉、甲基丙烯酰吗啉、4-乙烯基吡啶、2-乙烯基吡啶、5-乙基-2-乙烯基吡啶、N-丙烯酰基哌嗪、2-(叔丁基氨基)甲基丙烯酸乙酯、丙烯酸二甲基胺基乙基酯、甲基丙烯酸二甲基胺基乙基酯、丙烯酸二乙基胺基乙基酯、甲基丙烯酸二乙基胺基乙基酯、丙烯酸二乙基胺基丙基酯、甲基丙烯酸二乙基胺基丙基酯、丙烯酸胺基甲酸酯、甲基丙烯酸胺基甲酸酯等。
前述含环醚基的有机基可为但不限于氧杂环丁烷基团、环氧丙基等,具体而言,可使用例如含环醚基的单体进行树脂合成,例如(甲基)丙烯酸缩水甘油酯、烯丙基缩水甘油基醚、α-乙基丙烯酸缩水甘油酯、巴豆酰基缩水甘油基醚、(异)巴豆酸缩水甘油基醚、甲基丙烯酸氧杂环丁烷酯、丙烯酸氧杂环丁烷酯等。
前述含有羟基的有机基,可使用含有羟基的单体进行树脂合成,包括但不限于(甲基)丙烯酸羟基烷基酯,具体可例举如:甲基丙烯酸羟基乙酯、丙烯酸羟基乙酯、甲基丙烯酸羟基丙酯、丙烯酸羟基丙酯、甲基丙烯酸羟基丁酯、丙烯酸羟基丁酯、甲基丙烯酸羟基己酯、丙烯酸羟基己酯等。前述含有羟基的有机基亦可透过接枝聚合的方式形成。例如先使树脂主链带有羧基而形成具有羧基的树脂,再使用环氧化合物接枝聚合,使羧基与环氧基反应而产生羟基;具体而言,前述具有羧基的树脂并不特别限制,一般而言系使含有羧基的聚合性单体进行聚合而得,亦可以多元酸和多元醇聚合而成的含有羧基的聚酯作为前述具有羧基的树脂。所述含有羧基的聚合性单体包括但不限于(甲基)丙烯酸,顺丁烯二酸或顺丁烯二酐,巴豆酸,亚甲基丁二酸,反丁烯二酸,2-(甲基)丙烯酰氧乙基丁二酸,2-丙烯酰氧乙基己二酸,2-(甲基)丙烯酰氧乙基酞酸,2-(甲基)丙烯酰氧乙基六氢酞酸,2-(甲基)丙烯酰氧乙基顺丁烯二酸,2-(甲基)丙烯酰氧丙基丁二酸,2-丙烯酰氧丙基己二酸,2-(甲基)丙烯酰氧丙基氢酞酸,2-(甲基)丙烯酰氧丙基酞酸,2-(甲基)丙烯酰氧丙基顺丁烯二酸,2-(甲基)丙烯酰氧丁基丁二酸,2-丙烯酰氧丁基己二酸,2-(甲基)丙烯酰氧丁基氢酞酸,2-(甲基)丙烯酰氧丁基酞酸,2-(甲基)丙烯酰氧丁基顺丁烯二酸等。所述用于接枝聚合的环氧化合物只要具有环氧基皆可,可例举如下:环氧乙烷、环氧丙烷、(甲基)丙烯酸缩水甘油酯、烯丙基缩水甘油基醚、α-乙基丙烯酸缩水甘油酯、巴豆酰基缩水甘油基醚、(异)巴豆酸缩水甘油基醚等,但不限于此;除此之外,羟基亦可由醛、酮或羧酸还原得到。
较佳地,本发明的压克力树脂包括至少两种以上具有不同碳数的环的环醚基;更佳地,所述至少两种以上具有不同碳数的环的环醚基为氧杂环丁烷基团和环氧丙基的组合。
本发明所揭露的实施方式所含有选自叔胺基和仲胺基的群中至少一种的含氮有机基、含有环醚基的有机基和含有羟基的有机基的比例没有一定的限制,只要不影响本发明的密着性和耐溶剂性皆可。具体而言,以压克力树脂整体的固含量为100重量%,含有选自叔胺基或仲胺基的群中至少一种的含氮有机基的单体为1~50重量%,较佳为3~35重量%,更佳为5~20重量%;含有环醚基的单体为5~65重量%,较佳为10~50重量%,更佳为15~35重量%;含有羟基的单体为1~75重量%,较佳为3~60重量%,更佳为5~45重量%。
进一步地,在压克力树脂中,所述含有环醚基的有机基和所述含氮有机基的重量比为1:0.015~1:10,较佳为1:0.05~1:3.5,更佳为1:0.17~1:0.67;所述含有环醚基的有机基和所述含有羟基的有机基的重量比为1:0.015~1:25,较佳为1:0.05~1:6,更佳为1:0.17~1:2.3;所述含氮有机基和所述含有羟基的有机基的重量比为1:0.02~1:60,较佳为1:0.1~1:20,更佳为1:1~1:6。
在不影响本发明的特性下,本发明所揭露的压克力树脂可进一步包括其他官能基团,如芳香环基团、脂环基团、硅氧烷基团、羧酸基团等,但不限于此。具体而言,具有芳香环基团的单体如苯乙烯、邻苯基苯氧乙基丙烯酸酯等;具有脂环基团的单体如甲基丙烯酸三环[5.2.1.02,6]癸-8-基酯等;具有硅氧烷基团的单体如甲基丙烯酰氧基丙基三甲氧基硅烷等;具有羧酸基团的单体如甲基丙烯酸、丙烯酸等。其他官能基团的比例没有一定的限制,只要不影响本发明的密着性和耐溶剂性皆可。具体而言,以压克力树脂整体的固含量为100重量%,具有其他官能基团的单体为0~80重量%,较佳为0~60重量%,更佳为20~50重量%。
前述压克力树脂的重量平均分子量为6万以上,较佳为7~14万,更佳为8~10万,以达成优异的密着性和耐溶剂性。于本发明的可雷射离型组成物的整体固含量中,压克力树脂的比例并无特别限制,只要不影响本发明的密着性和耐溶剂性皆可。具体而言,压克力树脂占可雷射离型组成物的整体固含量为5~70重量%,较佳为7~55重量%,更佳为10~40重量%。
且较佳地,前述的压克力树脂的酸价为小于4mg KOH/g,以达成本发明优异的密着性和耐溶剂性。
[遮光材]
本发明所揭露的遮光材只要可使所述可雷射离型组成物吸收可见光、红外光或紫外光中至少一波段或阻挡可见光、红外光或紫外光中至少一波段通过的材料皆可。藉由遮光材的添加,可利用对应其特定波段的雷射将可雷射离型的组成物所形成的薄膜与支撑材分离。作为遮光材的材料可列举如下,包括但不限于:碳黑、钛黑、氧化钛、氧化铁、钛氮化物、硅灰、有机颜料、无机颜料、染料或其组合等。
较佳地,前述的遮光材不含金属离子。
遮光材的比例并无特别限制,只要不影响本发明的密着性和耐溶剂性皆可;具体而言,遮光材占可雷射离型组成物的整体固含量为20~90重量%,较佳为35~85重量%,更佳为50~70重量%。另外,本发明所揭露的树脂可使遮光材的添加比例高于50重量%,适用上可降低雷射离型所需的能量。
[添加剂]
添加剂如密着促进剂、交联剂等。密着促进剂可为硅烷类、硅氧烷类的化合物或界面活性剂;较佳地,密着促进剂为包括乙烯性基团、环氧基、胺基、酸酐、硫醇基或异氰酸酯基等的硅氧烷化合物,更佳地,密着促进剂为包括具有乙烯性基团的硅氧烷化合物。交联剂较佳为热交联剂;热交联剂可为含封端型或非封端型异氰酸酯基的化合物、如二乙烯基醚的含有烯基醚基的化合物、含烃氧基烃基的化合物、含双酸酐基的化合物、含双硫醇基的化合物、环氧树脂、三聚氰胺化合物、酚化合物等。添加剂可为一种或两种以上的组合。
较佳地,添加剂至少包括一种密着促进剂;更佳地,添加剂至少包括一种密着促进剂和一种交联剂。
具体而言,密着促进剂可例举为[3-(2,3-环氧丙氧)-丙基]三甲氧基硅烷、3-异氰酸酯基丙基三甲氧基硅烷、3-(甲基丙烯酰氧基)丙基三甲氧基硅烷等;热交联剂可例举为六羟甲基三聚氰胺、六甲氧基甲基三聚氰胺、三羟甲基酚、3,3',5,5'-四甲氧甲基联苯二酚、酚醛环氧树脂等。
添加剂的比例并无特别限制,只要不影响本发明的密着性和耐溶剂性皆可。具体而言,添加剂占可雷射离型组成物的整体固含量为5~35重量%,较佳为7~25重量%,更佳为10~15重量%。
[溶剂]
溶剂可为酰胺类、环酰胺类、酯类、醚类、醇类或是上述溶剂任意比例的混合溶剂。可列举如下,包括但不限于:N-甲基吡咯烷酮、N,N-二甲基甲酰胺、N,N-二甲基乙酰胺、N-甲基己内酰胺、二甲基亚砜、四甲基尿素、六甲基磷酰胺、γ-丁内酯、吡啶、甲醇、乙醇、异丙醇、正丁醇、环己醇、乙二醇、乙二醇甲基醚、乙二醇单乙基醚、乙二醇单丁基醚、乙二醇二甲基醚、乙二醇二乙基醚、二乙基醚、丙酮、甲基乙基酮、环己酮、乙酸甲酯、乙酸乙酯、四氢呋喃、二氯甲烷、三氯甲烷、1,2-二氯乙烷、苯、甲苯、二甲苯、正己烷、正庚烷、正辛烷等。溶剂的比例并无特别限制,只要不影响本发明的密着性和耐溶剂性,且可涂布成膜皆可。
[复合膜]
本发明的可雷射离型组成物亦可用于形成具有转印功能的复合膜;前述复合膜包括可离型支撑膜及由本发明的可雷射离型组成物所形成的暂时黏着膜,其中,暂时黏着膜设置于可离型支撑膜的一表面。详细来说,将可雷射离型的组成物涂布于支撑材的表面,并加热去除部分或全部溶剂后而得,且复合膜中的暂时黏着膜可被剥离。
作为可离型支撑膜的材料可包括但不限于聚对苯二甲酸乙二酯(PET)、聚乙烯、聚丙烯、聚碳酸酯、聚氯乙烯等的膜厚15~200μm的合成树脂薄膜;暂时黏着膜远离可离型支撑膜的另一表面亦可设置保护膜覆盖。
另外,前述涂布方式可包括但不限于旋转涂布、狭缝涂布、线棒涂布、网版印刷等。
[积层体]
本发明更提供一种积层体。本发明的积层体包括支撑材及如上所述的可雷射离型的组成物在支撑材上所形成的暂时黏着膜。详细来说,将可雷射离型的组成物涂布于支撑材的表面,并加热去除部分或全部溶剂后而得;亦可将前述的复合膜以转印的方式形成于支撑材的表面。
作为本发明的支撑材并不限定,只要可被雷射穿透的材料皆可。例举如:玻璃、硅晶圆等。
利用本发明的可雷射离型组成物在支撑材上形成膜的涂布方式并不限定,只要能在支撑材上涂布成膜皆可,如:旋转涂布、刮刀式涂布等。
涂布完成后,以40℃~100℃的预烘烤温度在热板上加热5~20分钟以去除溶剂,再以200℃~300℃加热30~60分钟以固化成膜。
[雷射离型方法]
本发明更提供一种雷射离型方法。包括以下步骤:
S1:提供支撑材1;
S2:以上述的可雷射离型的组成物涂布在前述的支撑材上并硬化成膜2;
S3:在膜2上形成加工元件3;及S4:以雷射将支撑材1移除。
具体而言,步骤S1和S2即为上述积层体的提供步骤。且进一步地,步骤S2亦可用转印的方法完成,即以前述的可雷射离型的组成物所形成的暂时黏着膜转印在前述支撑材的一表面上。
具体而言,步骤S3所述的加工元件可为裸晶(KGD)或线路重布层(RDL);且进一步地,所述加工元件若为裸晶(KGD),则步骤S3更包括封胶(molding);所述加工元件若为线路重布层(RDL),则步骤S3更包括焊晶(die bonding)、封胶(molding)等步骤。
具体而言,步骤S4所使用的雷射种类并无特别限制,可包括YAG雷射、红宝石雷射、YVO4雷射、光纤雷射等的固体雷射、色素雷射等的液体雷射、CO2雷射、准分子雷射、Ar雷射、He-Ne雷射等气体雷射、半导体雷射、半导体激发固体雷射(Diode Pump Solid StateLaser,DPSSL)、自由电子雷射等。
且进一步地,步骤S4更可包括以雷射将支撑材1去除后的清洁步骤以去除本发明的可雷射离型组成物所形成的残膜,和焊锡(solder printing)等步骤。所述清洁步骤具体而言,如使用电浆的干式蚀刻、使用化学药剂的湿式蚀刻等。
因应其应用领域的不同,除了半导体领域的应用的外,只要任一基板、材料或加工元件需藉由本发明的积层体,而后进行一或多道制程,最后再利用雷射分离本发明的积层体与基板、材料或加工元件,皆为本发明的雷射离型方法的范畴。
[实施例]
压克力树脂的合成:
于1L反应釜中,架设温度计、滴定管、氮气入气孔以及搅拌棒装置。首先加入150克的丙二醇甲基醚醋酸酯(PGMEA)于釜底以转速200rpm搅拌升温至85℃,接着将不同重量比例的单体以及0.005mol的偶氮二异丁腈混于150克的PGMEA中,以滴定的方式滴入反应釜中,接着保持温度搅拌4小时,即可降至室温完成反应,可得固含量为40%的树脂。
可雷射离型组成物的配制:
首先将密着促进剂以及交联剂加入具有20%N,N-二乙基甲酰胺(DEF)及80%丙二醇甲基醚醋酸酯(PGMEA)的混和溶剂,确认混合均匀后,再将树脂加入并混合均匀后,最后加入遮光材(自达兴材料购入,PK260)并搅拌1小时,可得固含量为20%的组成物。
积层体的形成:
将表1~表3中所示比例的组成物,以可形成1.3μm膜厚的转速,旋转涂布于一玻璃支撑体上,经由50℃和90℃各5分钟的预烘烤去除溶剂后,待膜表面干燥后,再以230℃加热30分钟以固化成膜,而形成积层体。
耐溶剂性测试:于80℃浸泡光阻去除剂(AT7880P,从品化购入),分别于不同时间点进行百格测试,测试手法遵循ASTM D3359来进行判断剥落情况。AT7880P组成为二甲基亚砜、乙醇胺和氢氧化四甲基铵。(表中:◎代表浸泡时间大于10分钟后进行百格测试为5B;O代表浸泡10分钟后进行百格测试为5B;△代表浸泡5分钟后进行百格测试为5B;X代表不论浸泡时间皆未达5B。)
密着性测试:使用拉力机进行拉力测试(Pull off test)。首先利用框胶(723K1,从AUO购入)定量点于涂布试片上,上层黏着玻璃,以355nm的UV灯照射169秒进行光固化的步骤,且热固化120度1小时,最后进行拉力测试,确认涂层与剥离所需的力,且将其除以框胶的面积,即为拉应力(tensile stress)。此处以玻璃对贴片拉应力数值作为标准品,定义为2N/mm2,将所有拉应力的样品规格化后,即可得到数值。
可雷射离型测试:使用1瓦或1瓦以上能量的355nm雷射进行连续扫描后,可利用黏着纸(protect film)撕起的材料,称的可雷射离型。
下列实施例均为可雷射离型。
树脂成分说明:
OXMA:甲基丙烯酸氧杂环丁烷酯;GMA:甲基丙烯酸缩水甘油酯;ACMO:丙烯酰吗啉;HEMA:甲基丙烯酸羟基乙酯;FA513M:甲基丙烯酸三环[5.2.1.02,6]癸-8-基酯;EM2105:邻苯基苯氧乙基丙烯酸酯;EM50:苯乙烯;A174:甲基丙烯酰氧基丙基三甲氧基硅烷;DMAEMA:丙烯酸二甲基胺基乙基酯。
添加剂成分说明:
X-12-1050:具有二个以上压克力官能基的硅氧烷聚合物(从信越购入);
Alink:3-异氰酸酯基丙基三甲氧基硅烷;AD124:[3-(2,3-环氧丙氧)-丙基]三甲氧基硅烷;N740:酚醛环氧树脂;TMOM-BP:3,3',5,5'-四甲氧甲基联苯二酚;
HMMM:六甲氧基甲基三聚氰胺。
表1:实施例1~实施例6
表2:实施例7~实施例13
表3:实施例14~实施例16&比较例1~比较例4
表4:实施例17~实施例19
从实施例和比较例1~4可知,没有同时包括含有选自叔胺基和仲胺基的群中至少一种的含氮有机基、环醚基和羟基的树脂,无法达成本发明优异的耐溶剂性或密着性;从实施例7和实施例8可知,树脂具有两种环醚基团的组成物,具有较佳的密着性;从实施例11、实施例17和实施例18可知,包括具有乙烯性基团的硅氧烷化合物的组成物具有较佳的密着性,包括具有环氧基的硅氧烷化合物或具有异氰酸酯基的硅氧烷化合物则次之。
[应用领域]
本发明的可雷射离型组成物、及其积层体除了半导体封装领域的应用之外,只要任一支撑材或材料需藉由一暂时载体乘载,而后进行一或多道制程,最后再利用雷射分离载体与支撑材或材料,皆为本发明可适用的范围。例如:软性支撑材或是太阳能电池制作。
虽然本发明已以实施方式揭露如上,然其并非用以限定本发明,任何熟习此技艺者,在不脱离本发明的精神和范围内,皆可作各种更动与润饰,因此本发明的保护范围,当视后附的申请专利范围所界定者为准。
Claims (13)
1.一种可雷射离型的组成物,其特征在于,包括:压克力树脂、遮光材、添加剂和溶剂;其中所述压克力树脂包括含有选自叔胺基和仲胺基的群中至少一种的含氮有机基、含有环醚基的有机基和含有羟基的有机基,所述添加剂至少包括一种密着促进剂。
2.根据权利要求1所述的可雷射离型的组成物,其中,在所述压克力树脂中,所述含有环醚基的有机基和所述含氮有机基的重量比为1:0.015~1:10,所述含有环醚基的有机基和所述含有羟基的有机基的重量比为1:0.015~1:25,所述含氮有机基和所述含有羟基的有机基的重量比为1:0.02~1:60。
3.根据权利要求1所述的可雷射离型的组成物,其中,所述压克力树脂的酸价小于4mgKOH/g。
4.根据权利要求1~3中任一权利要求所述的可雷射离型的组成物,其中,所述密着促进剂为包括选自乙烯性基团、环氧基和异氰酸酯基的群中至少一种的硅氧烷化合物。
5.根据权利要求1~3中任一权利要求所述的可雷射离型的组成物,其中,所述含有选自叔胺基和仲胺基的群中至少一种的含氮有机基为2-(烃基)胺基烃基酯基团、二烃基胺基烃基酯基团、胺基甲酸酯基团、吡啶、哌嗪和吗啉基团中的至少一种,其中所述烃基中任一-CH2-亦可以各自独立为-NH-、-O-或-S-取代,其中各取代基彼此不相连接。
6.根据权利要求1~3中任一权利要求所述的可雷射离型的组成物,其中,所述压克力树脂包括至少两种以上具有不同碳数的环的环醚基。
7.根据权利要求1~3中任一权利要求所述的可雷射离型的组成物,其中,所述环醚基为氧杂环丁烷基、环氧丙基或其组合。
8.根据权利要求1~3中任一权利要求所述的可雷射离型的组成物,其中,所述遮光材为可使所述组成物吸收可见光、红外光或紫外光中至少一波段或阻挡可见光、红外光或紫外光中至少一波段通过的材料。
9.根据权利要求1~3中任一权利要求所述的可雷射离型的组成物,其中,所述添加剂进一步包括交联剂。
10.一种积层体,其特征在于,包括一支撑材及以权利要求1或2所述的可雷射离型的组成物在所述支撑材上所形成的膜。
11.一种复合膜,其特征在于,包括一可离型支撑膜及以权利要求1~3中任一权利要求所述的可雷射离型的组成物所形成的暂时黏着膜;其中,所述暂时黏着膜设置于所述可离型支撑膜的一表面。
12.一种雷射离型方法,其特征在于,包括以下步骤:
提供一支撑材;
将以权利要求1~3中任一权利要求所述的可雷射离型的组成物所形成的暂时黏着膜转印至所述支撑材的一表面;及
以雷射将所述支撑材移除的步骤。
13.一种雷射离型方法,其特征在于,包括以下步骤:
提供一支撑材;
以权利要求1~3中任一权利要求所述的可雷射离型的组成物涂布在所述支撑材上并硬化成膜;及
以雷射将所述支撑材移除的步骤。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW109102238A TWI724765B (zh) | 2020-01-21 | 2020-01-21 | 可雷射離型的組成物、其積層體和雷射離型方法 |
TW109102238 | 2020-01-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN113214588A true CN113214588A (zh) | 2021-08-06 |
CN113214588B CN113214588B (zh) | 2022-10-04 |
Family
ID=76604938
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110075829.8A Active CN113214588B (zh) | 2020-01-21 | 2021-01-20 | 可雷射离型的组成物、其积层体和雷射离型方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11794381B2 (zh) |
JP (1) | JP7133047B2 (zh) |
KR (1) | KR102537045B1 (zh) |
CN (1) | CN113214588B (zh) |
TW (1) | TWI724765B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI724765B (zh) * | 2020-01-21 | 2021-04-11 | 達興材料股份有限公司 | 可雷射離型的組成物、其積層體和雷射離型方法 |
US11631650B2 (en) * | 2021-06-15 | 2023-04-18 | International Business Machines Corporation | Solder transfer integrated circuit packaging |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101256360A (zh) * | 2007-03-01 | 2008-09-03 | Jsr株式会社 | 放射线敏感性树脂组合物、层间绝缘膜和微透镜、以及它们的制备方法 |
TW200842162A (en) * | 2007-02-21 | 2008-11-01 | Jsr Corp | Radiation sensitive resin composition, spacer and production method thereof, and liquid crystal display element |
JP2013200431A (ja) * | 2012-03-23 | 2013-10-03 | Jsr Corp | 感放射線性樹脂組成物、硬化膜及び硬化膜の形成方法 |
WO2018194169A1 (ja) * | 2017-04-21 | 2018-10-25 | 日産化学株式会社 | 感光性樹脂組成物 |
Family Cites Families (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5436338A (en) * | 1977-08-26 | 1979-03-17 | Toyo Soda Mfg Co Ltd | Cold-curable water-based coating composition |
JPS6030348B2 (ja) * | 1978-06-15 | 1985-07-16 | 東レ株式会社 | 塗料用組成物 |
JPS5536276A (en) * | 1978-09-08 | 1980-03-13 | Kansai Paint Co Ltd | One-pack type high-solid coating composition |
US4293475A (en) * | 1980-09-12 | 1981-10-06 | Tenneco Chemicals, Inc. | Pigment dispersions for surface-coating compositions and surface-coating compositions containing same |
US5275847A (en) * | 1988-09-28 | 1994-01-04 | Basf Lacke+Farben Aktiengesellschaft | Process for producing a multi-layer coating using aqueous coating compound aqueous coating compounds |
US5064719A (en) * | 1989-09-26 | 1991-11-12 | E. I. Du Pont De Nemours And Company | Coating composition of acrylic polymers containing reactive groups and an epoxy organosilane |
JP2893875B2 (ja) * | 1990-06-20 | 1999-05-24 | ジェイエスアール株式会社 | 保護膜形成用材料 |
JP2852129B2 (ja) * | 1990-12-28 | 1999-01-27 | 日本ペイント株式会社 | 熱硬化性塗料組成物 |
US5494970A (en) * | 1991-08-06 | 1996-02-27 | Basf Corporation | Coating composition for a clearcoat with improved solvent and acid resistance |
US5183831A (en) * | 1991-08-22 | 1993-02-02 | Ciba-Geigy Corporation | Radiation curable composition with high temperature oil resistance |
DE4237658A1 (de) * | 1992-11-07 | 1994-05-11 | Herberts Gmbh | Bindemittelzusammensetzung, diese enthaltende Überzugsmittel, deren Herstellung und Verwendung |
US5436073A (en) * | 1993-05-26 | 1995-07-25 | Avery Dennison Corporation | Multi-layer composite |
AT404733B (de) * | 1997-04-09 | 1999-02-25 | Vianova Kunstharz Ag | Verfahren zur herstellung von strahlungshärtbaren wasserverdünnbaren urethanharzen und deren verwendung |
AU751658B2 (en) * | 1997-09-20 | 2002-08-22 | Basf Coatings Aktiengesellschaft | Powder varnish dispersion |
EP1159369B1 (en) * | 1998-12-15 | 2006-11-29 | Avery Dennison Corporation | Removable emulsion pressure-sensitive adhesives |
JP2002541273A (ja) * | 1999-03-31 | 2002-12-03 | クレ、バレ、ソシエテ、アノニム | 向上した機械的強度を有する架橋反応性微粒子含有熱硬化性樹脂組成物 |
CA2413759A1 (en) * | 2000-06-28 | 2002-12-20 | Shigeki Naitoh | Resin composition for insulation material, resin composition for adhesive and adhesion sheet |
US6376631B1 (en) * | 2000-09-27 | 2002-04-23 | Rhodia, Inc. | Processes to control the residual monomer level of copolymers of tertiary amino monomer with a vinyl-functional monomer |
US20050256219A1 (en) * | 2002-03-11 | 2005-11-17 | Hideaki Takase | Photocurable resin composition and optical component |
DE10259673A1 (de) * | 2002-12-18 | 2004-07-01 | Basf Ag | Verfahren zur Herstellung von strahlungshärtbaren Urethan(meth)acrylaten |
JP4374262B2 (ja) * | 2004-03-10 | 2009-12-02 | 日本ビー・ケミカル株式会社 | 積層フィルム |
US20050215655A1 (en) * | 2004-03-29 | 2005-09-29 | Bilodeau Wayne L | Anaerobic pressure sensitive adhesive |
US20090076183A1 (en) * | 2005-05-04 | 2009-03-19 | John Jun Chiao | Radiation curable methacrylate polyesters |
EP1731541A1 (en) * | 2005-06-10 | 2006-12-13 | Cytec Surface Specialties, S.A. | Low extractable radiation curable compositions containing aminoacrylates |
EP1985674A1 (en) * | 2007-04-27 | 2008-10-29 | Cytec Surface Specialties, S.A. | Polymer Compositions |
EP2201051A1 (en) * | 2007-08-15 | 2010-06-30 | Isp Investments Inc. | Polyvinylamide polymers containing polymerizable functionalities |
WO2009050786A1 (ja) * | 2007-10-16 | 2009-04-23 | Denki Kagaku Kogyo Kabushiki Kaisha | 粘着剤、粘着シート、多層粘着シート及び電子部品の製造方法 |
EP2130846A1 (en) * | 2008-06-06 | 2009-12-09 | Cytec Surface Specialties, S.A. | Aqueous radiation curable polyurethane compositions |
US8158698B2 (en) * | 2009-07-24 | 2012-04-17 | E. I. Du Pont De Nemours And Company | Powder coating composition and process of manufacture |
KR101494244B1 (ko) * | 2010-03-31 | 2015-02-17 | 린텍 가부시키가이샤 | 다이싱 시트용 기재 필름 및 다이싱 시트 |
JP5725760B2 (ja) * | 2010-08-19 | 2015-05-27 | 大同化成工業株式会社 | タッチパネル用粘着剤組成物に用いるアクリル系高分子化合物 |
JP5815536B2 (ja) * | 2010-09-10 | 2015-11-17 | 株式会社日本触媒 | アミノ基含有重合体及びその製造方法、並びに、洗剤組成物 |
JP5555578B2 (ja) * | 2010-09-14 | 2014-07-23 | 積水化学工業株式会社 | 粘着剤組成物及び粘着テープ |
JP5174134B2 (ja) * | 2010-11-29 | 2013-04-03 | 富士フイルム株式会社 | レーザー彫刻用樹脂組成物、レーザー彫刻用レリーフ印刷版原版、レリーフ印刷版の製版方法及びレリーフ印刷版 |
US8507605B2 (en) * | 2011-02-23 | 2013-08-13 | University Of Ottawa | Latex compositions and uses thereof |
JP2012247574A (ja) * | 2011-05-26 | 2012-12-13 | Nitto Denko Corp | 粘着型偏光板および画像表示装置 |
EP2644589A1 (en) * | 2012-03-30 | 2013-10-02 | Cytec Surface Specialties, S.A. | Radiation Curable (Meth)acrylated Compounds |
US10100218B2 (en) * | 2012-09-27 | 2018-10-16 | Sekisui Chemical Co., Ltd. | Curable composition for inkjet, and method for producing electronic part |
US20160017184A1 (en) * | 2013-03-06 | 2016-01-21 | John Moore | Adhesive with tunable porosity and methods to support temporary bonding applications |
JP6091954B2 (ja) * | 2013-03-26 | 2017-03-08 | リンテック株式会社 | 粘着シート、保護膜形成用フィルム、保護膜形成用複合シート、およびマーキング方法 |
JP2015021065A (ja) * | 2013-07-19 | 2015-02-02 | 日東電工株式会社 | 粘着テープ、レーザー加工品の製造方法及び粘着テープの製造方法 |
KR20160039188A (ko) | 2013-08-01 | 2016-04-08 | 린텍 가부시키가이샤 | 보호막 형성용 복합 시트 |
JP6368718B2 (ja) * | 2013-09-27 | 2018-08-01 | リンテック株式会社 | 電気剥離性粘着剤組成物、及び電気剥離性粘着シート、並びに電気剥離性粘着シートの使用方法 |
EP2868681A1 (en) * | 2013-10-31 | 2015-05-06 | ALLNEX AUSTRIA GmbH | Waterborne curing compositions for electrodeposition and radiation curing and processes to obtain such compositions |
WO2016014225A1 (en) * | 2014-07-25 | 2016-01-28 | 3M Innovative Properties Company | Optically clear pressure sensitive adhesive article |
CN108699411B (zh) * | 2016-02-04 | 2021-03-26 | 苏州润邦半导体材料科技有限公司 | 可脱粘粘合剂及其高温用途 |
DE102016207075A1 (de) * | 2016-04-26 | 2017-10-26 | Tesa Se | Repositionierbares feuchtigkeitshärtendes Klebeband |
KR102340703B1 (ko) * | 2016-05-20 | 2021-12-16 | 쇼와덴코머티리얼즈가부시끼가이샤 | 이형 필름 |
JP6791086B2 (ja) * | 2016-10-11 | 2020-11-25 | 信越化学工業株式会社 | ウエハ積層体、その製造方法、及びウエハ積層用接着剤組成物 |
KR20180062201A (ko) * | 2016-11-30 | 2018-06-08 | 모멘티브퍼포먼스머티리얼스코리아 주식회사 | 유기 전자 소자 봉지재용 조성물 및 이를 이용하여 형성된 봉지재 |
JP6980999B2 (ja) * | 2016-12-01 | 2021-12-15 | Jsr株式会社 | 対象物の処理方法、および半導体装置の製造方法 |
KR102535755B1 (ko) * | 2017-09-21 | 2023-05-24 | 미쯔비시 케미컬 주식회사 | 이형 필름 및 적층체 |
TWI798300B (zh) * | 2017-11-30 | 2023-04-11 | 日商三菱化學股份有限公司 | 離型膜及積層體之製造方法 |
EP3594258A1 (en) * | 2018-07-09 | 2020-01-15 | Allnex Belgium, S.A. | Radiation curable composition |
CN111592836B (zh) * | 2019-02-21 | 2022-11-04 | 3M创新有限公司 | 一种uv解粘压敏胶组合物和压敏胶带 |
KR20200133288A (ko) * | 2019-05-16 | 2020-11-27 | 삼성디스플레이 주식회사 | 고분자 수지, 이를 포함하는 윈도우 모듈, 및 이를 포함하는 표시 장치 |
EP3981832A4 (en) * | 2019-06-07 | 2023-06-07 | Sekisui Chemical Co., Ltd. | RESIN COMPOSITION, RESIN FILM AND GLASS LAMINATE |
EP3786242A1 (en) * | 2019-08-27 | 2021-03-03 | Nitto Belgium N.V | Pressure-sensitive adhesive sheet with improved weatherability |
WO2021096208A1 (ko) * | 2019-11-15 | 2021-05-20 | 주식회사 엘지화학 | 접착력 가변 폴더블 디스플레이용 보호 필름 및 이를 포함하는 폴더블 디스플레이 장치 |
TWI724765B (zh) * | 2020-01-21 | 2021-04-11 | 達興材料股份有限公司 | 可雷射離型的組成物、其積層體和雷射離型方法 |
KR20220100133A (ko) * | 2021-01-07 | 2022-07-15 | 삼성디스플레이 주식회사 | 수지 조성물 및 수지 조성물로부터 형성된 접착층을 포함하는 표시 장치 |
US20230103371A1 (en) * | 2021-09-30 | 2023-04-06 | Rohm And Haas Electronic Materials Llc | Photoresist underlayer composition |
-
2020
- 2020-01-21 TW TW109102238A patent/TWI724765B/zh active
-
2021
- 2021-01-15 JP JP2021005034A patent/JP7133047B2/ja active Active
- 2021-01-20 CN CN202110075829.8A patent/CN113214588B/zh active Active
- 2021-01-20 US US17/152,819 patent/US11794381B2/en active Active
- 2021-01-21 KR KR1020210008796A patent/KR102537045B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200842162A (en) * | 2007-02-21 | 2008-11-01 | Jsr Corp | Radiation sensitive resin composition, spacer and production method thereof, and liquid crystal display element |
CN101256360A (zh) * | 2007-03-01 | 2008-09-03 | Jsr株式会社 | 放射线敏感性树脂组合物、层间绝缘膜和微透镜、以及它们的制备方法 |
JP2013200431A (ja) * | 2012-03-23 | 2013-10-03 | Jsr Corp | 感放射線性樹脂組成物、硬化膜及び硬化膜の形成方法 |
WO2018194169A1 (ja) * | 2017-04-21 | 2018-10-25 | 日産化学株式会社 | 感光性樹脂組成物 |
Also Published As
Publication number | Publication date |
---|---|
TW202128791A (zh) | 2021-08-01 |
JP7133047B2 (ja) | 2022-09-07 |
US11794381B2 (en) | 2023-10-24 |
KR20210095079A (ko) | 2021-07-30 |
KR102537045B1 (ko) | 2023-05-26 |
JP2021116416A (ja) | 2021-08-10 |
US20210221032A1 (en) | 2021-07-22 |
CN113214588B (zh) | 2022-10-04 |
TWI724765B (zh) | 2021-04-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI620239B (zh) | 半導體晶圓之切割方法及使用於其之半導體加工用切割帶 | |
JP4846406B2 (ja) | チップ用保護膜形成用シート | |
TWI643925B (zh) | Temporary adhesive for semiconductor device manufacturing, adhesive support using the same, and method for manufacturing semiconductor device | |
CN113214588B (zh) | 可雷射离型的组成物、其积层体和雷射离型方法 | |
JP5161284B2 (ja) | 電子部品の製造方法 | |
TWI611923B (zh) | 半導體裝置製造用暫時接合用積層體、及半導體裝置之製造方法 | |
CN105765700A (zh) | 半导体加工用粘合带 | |
KR102487737B1 (ko) | 실록산 수지 조성물, 그것을 사용한 접착제, 표시 장치, 반도체 장치 및 조명 장치 | |
JP7409029B2 (ja) | 半導体装置の製造方法、並びにダイシング・ダイボンディング一体型フィルム及びその製造方法 | |
CN110396371B (zh) | 暂时粘着被加工物的方法及粘着剂 | |
TW201441034A (zh) | 半導體裝置製造用暫時接合用積層體、及半導體裝置之製造方法 | |
JP2010135621A (ja) | チップ用保護膜形成用シートおよび保護膜付半導体チップ | |
CN110591611A (zh) | 一种在高温下粘力降低的uv减粘保护膜胶水及其保护膜生产方法 | |
US20240124729A1 (en) | Ink-jet adhesive, method for producing electronic component, and electronic component | |
TWI816004B (zh) | 光硬化性黏著劑的評價方法、切割-黏晶一體型膜及其製造方法、以及半導體裝置的製造方法 | |
TWI611932B (zh) | 可印刷的功能性硬塗膜及其製備方法 | |
JP2016039176A (ja) | 仮固定用樹脂組成物、仮固定用樹脂フィルム、仮固定用樹脂フィルムシート及び半導体ウェハの加工方法 | |
TW201722723A (zh) | 黏著薄片 | |
JP2016219512A (ja) | 半導体ウェハの加工方法及び半導体装置の製造方法 | |
CN116063886B (zh) | 耐高温非硅离型材料、非硅离型膜及其制备方法与应用 | |
WO2008072437A1 (ja) | 接着剤組成物、接着フィルムおよび剥離方法 | |
JP7287066B2 (ja) | 樹脂組成物および電子デバイス製造方法 | |
JP7275770B2 (ja) | 樹脂組成物および電子デバイス製造方法 | |
KR20220136129A (ko) | 접착제층 형성용 조성물, 적층체, 적층체의 제조 방법 및 적층체의 처리 방법 | |
KR102367555B1 (ko) | 네거티브형 감광성 실록산 조성물 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |