CN113169149A - 显示背板及其制备方法和显示装置 - Google Patents

显示背板及其制备方法和显示装置 Download PDF

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CN113169149A
CN113169149A CN201980003118.0A CN201980003118A CN113169149A CN 113169149 A CN113169149 A CN 113169149A CN 201980003118 A CN201980003118 A CN 201980003118A CN 113169149 A CN113169149 A CN 113169149A
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conductive
driving
conductive portion
electrode
substrate
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CN113169149B (zh
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梁志伟
刘英伟
吕志军
王珂
曹占锋
麦轩伟
袁广才
狄沐昕
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Priority claimed from PCT/CN2019/089543 external-priority patent/WO2020237629A1/zh
Priority claimed from PCT/CN2019/100920 external-priority patent/WO2021030927A1/zh
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  • Manufacturing & Machinery (AREA)
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Abstract

提供了一种显示背板及其制备方法和显示装置，该显示背板包括驱动基板；多个驱动电极，其位于所述驱动基板上；多个连接结构，其分别设置在所述多个驱动电极上，所述连接结构包括：至少一个导电部，其设置在所述驱动电极上；以及限制部，其位于所述驱动电极的设置有所述至少一个导电部的一侧并且位于至少一个导电部的至少部分外围区域中，该限制部从驱动电极突出并且在垂直于驱动基板的方向上具有第一高度。

Description

PCT国内申请，说明书已公开。

Claims (23)

  1. PCT国内申请，权利要求书已公开。
CN201980003118.0A 2019-05-31 2019-12-19 显示背板及其制备方法和显示装置 Active CN113169149B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
CNPCT/CN2019/089543 2019-05-31
PCT/CN2019/089543 WO2020237629A1 (zh) 2019-05-31 2019-05-31 显示背板及制作方法、显示面板及制作方法、显示装置
PCT/CN2019/100920 WO2021030927A1 (zh) 2019-08-16 2019-08-16 显示背板及其制作方法、显示装置
CNPCT/CN2019/100920 2019-08-16
PCT/CN2019/126708 WO2020238173A1 (zh) 2019-05-31 2019-12-19 显示背板及其制备方法和显示装置

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CN113169149B CN113169149B (zh) 2024-09-06

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US11764343B2 (en) * 2019-05-31 2023-09-19 Boe Technology Group Co., Ltd. Display backboard and manufacturing method thereof and display device
CN113782664B (zh) * 2021-09-10 2023-12-01 深圳市华星光电半导体显示技术有限公司 显示面板及其制备方法和绑定结构及其制备方法

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101752336A (zh) * 2008-12-10 2010-06-23 台湾积体电路制造股份有限公司 半导体装置及其制造方法
CN103247587A (zh) * 2012-02-09 2013-08-14 台湾积体电路制造股份有限公司 互连止裂器结构及方法
CN203151858U (zh) * 2013-03-25 2013-08-21 乐健科技（珠海）有限公司 带有陶瓷反光层的金属基印刷电路板及led发光模块
CN103489826A (zh) * 2013-09-26 2014-01-01 京东方科技集团股份有限公司 阵列基板、制备方法以及显示装置
CN204906329U (zh) * 2015-09-24 2015-12-23 中国电子科技集团公司第二十六研究所 一种射频声表面波滤波器倒装焊结构
CN105374781A (zh) * 2015-09-07 2016-03-02 武汉华星光电技术有限公司 引脚结构和显示设备
CN106842647A (zh) * 2017-03-20 2017-06-13 武汉华星光电技术有限公司 一种显示装置、绑定结构及其制备方法
CN106856218A (zh) * 2016-12-20 2017-06-16 创维液晶器件(深圳)有限公司 一种免封装led结构及其制作方法
CN107819003A (zh) * 2016-09-14 2018-03-20 群创光电股份有限公司 显示设备
CN108807356A (zh) * 2018-06-05 2018-11-13 深圳市智讯达光电科技有限公司 一种四合一mini-LED模组、显示屏及制造方法
CN109004078A (zh) * 2018-07-27 2018-12-14 上海天马微电子有限公司 微型led显示面板及其制作方法和显示装置
CN109148506A (zh) * 2018-08-24 2019-01-04 上海天马微电子有限公司 Micro LED转移方法及显示面板、显示装置

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000183507A (ja) 1998-12-17 2000-06-30 Shinko Electric Ind Co Ltd 半導体チップ若しくは半導体装置の実装基板への実装構造
JP4920330B2 (ja) 2006-07-18 2012-04-18 ソニー株式会社 実装構造体の実装方法、発光ダイオードディスプレイの実装方法、発光ダイオードバックライトの実装方法および電子機器の実装方法
JP4949279B2 (ja) 2008-01-21 2012-06-06 新光電気工業株式会社 配線基板及びその製造方法
US20100044416A1 (en) 2008-08-21 2010-02-25 Nec Corporation Method of manufacturing electronic components having bump
US8766439B2 (en) 2009-12-10 2014-07-01 International Business Machines Corporation Integrated circuit chip with pyramid or cone-shaped conductive pads for flexible C4 connections and a method of forming the integrated circuit chip
US8835301B2 (en) * 2011-02-28 2014-09-16 Stats Chippac, Ltd. Semiconductor device and method of forming bump structure with insulating buffer layer to reduce stress on semiconductor wafer
FR2977370B1 (fr) * 2011-06-30 2013-11-22 Commissariat Energie Atomique Composant de connexion muni d'inserts creux
CN103117246B (zh) 2011-11-17 2015-09-02 中芯国际集成电路制造(上海)有限公司 金属互连结构的制作方法
WO2017149521A1 (en) 2016-03-04 2017-09-08 Vuereal Inc. Micro device integration into system substrate
KR20160119942A (ko) 2015-04-06 2016-10-17 에스케이하이닉스 주식회사 소켓 플러그 접속 구조를 포함하는 반도체 패키지
US10468363B2 (en) 2015-08-10 2019-11-05 X-Celeprint Limited Chiplets with connection posts
KR102402999B1 (ko) 2015-08-31 2022-05-30 삼성디스플레이 주식회사 디스플레이 장치 및 이의 제조 방법
KR102455088B1 (ko) 2016-01-11 2022-10-14 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 박막 트랜지스터 기판, 이를 포함하는 표시패널 및 표시장치
US10103069B2 (en) 2016-04-01 2018-10-16 X-Celeprint Limited Pressure-activated electrical interconnection by micro-transfer printing
US11064609B2 (en) 2016-08-04 2021-07-13 X Display Company Technology Limited Printable 3D electronic structure
US10325893B2 (en) 2016-12-13 2019-06-18 Hong Kong Beida Jade Bird Display Limited Mass transfer of micro structures using adhesives
CN110100309A (zh) 2016-12-23 2019-08-06 株式会社流明斯 微型led模块及其制造方法
TWI607559B (zh) 2017-01-10 2017-12-01 錼創科技股份有限公司 顯示面板
US20180247584A1 (en) * 2017-02-27 2018-08-30 Shenzhen China Star Optoelectronics Technology Co., Ltd. Micro light emitting diode array substrates and display panels
CN106876552B (zh) 2017-02-27 2019-07-26 深圳市华星光电技术有限公司 微发光二极管阵列基板及显示面板
CN108183156A (zh) 2017-12-26 2018-06-19 深圳市华星光电技术有限公司 微型发光二极管显示面板及其制作方法
US10325894B1 (en) 2018-04-17 2019-06-18 Shaoher Pan Integrated multi-color light-emitting pixel arrays based devices by bonding
CN108493154B (zh) 2018-04-28 2020-09-29 深圳市华星光电技术有限公司 Micro LED显示面板的制作方法及Micro LED显示面板
TWI691104B (zh) * 2018-07-18 2020-04-11 友達光電股份有限公司 發光裝置及其製造方法
CN108933153B (zh) 2018-07-27 2021-02-02 上海天马微电子有限公司 显示面板及其制作方法、显示装置
CN109494292B (zh) 2018-10-30 2020-07-31 海信视像科技股份有限公司 一种微型发光二极管灯板、其制作方法及显示装置
CN109285856B (zh) 2018-11-22 2020-07-03 京东方科技集团股份有限公司 Led发光基板及其制作方法、显示装置
CN109755376A (zh) 2019-03-20 2019-05-14 中芯长电半导体（江阴）有限公司 扇出型led的封装结构及封装方法
CN109950270B (zh) 2019-03-27 2021-01-08 京东方科技集团股份有限公司 发光二极管芯片的驱动背板及其制作方法、显示面板
CN109887950A (zh) 2019-04-19 2019-06-14 京东方科技集团股份有限公司 显示基板、led器件、显示面板、显示装置及制作方法
CN110061106B (zh) 2019-04-24 2020-04-17 京东方科技集团股份有限公司 芯片、目标基板、芯片转移方法及显示装置
CN110047866B (zh) 2019-04-30 2021-04-02 京东方科技集团股份有限公司 阵列基板、显示面板及微型led的转移方法
US11764343B2 (en) * 2019-05-31 2023-09-19 Boe Technology Group Co., Ltd. Display backboard and manufacturing method thereof and display device

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101752336A (zh) * 2008-12-10 2010-06-23 台湾积体电路制造股份有限公司 半导体装置及其制造方法
CN103247587A (zh) * 2012-02-09 2013-08-14 台湾积体电路制造股份有限公司 互连止裂器结构及方法
CN203151858U (zh) * 2013-03-25 2013-08-21 乐健科技（珠海）有限公司 带有陶瓷反光层的金属基印刷电路板及led发光模块
CN103489826A (zh) * 2013-09-26 2014-01-01 京东方科技集团股份有限公司 阵列基板、制备方法以及显示装置
CN105374781A (zh) * 2015-09-07 2016-03-02 武汉华星光电技术有限公司 引脚结构和显示设备
CN204906329U (zh) * 2015-09-24 2015-12-23 中国电子科技集团公司第二十六研究所 一种射频声表面波滤波器倒装焊结构
CN107819003A (zh) * 2016-09-14 2018-03-20 群创光电股份有限公司 显示设备
CN106856218A (zh) * 2016-12-20 2017-06-16 创维液晶器件(深圳)有限公司 一种免封装led结构及其制作方法
CN106842647A (zh) * 2017-03-20 2017-06-13 武汉华星光电技术有限公司 一种显示装置、绑定结构及其制备方法
CN108807356A (zh) * 2018-06-05 2018-11-13 深圳市智讯达光电科技有限公司 一种四合一mini-LED模组、显示屏及制造方法
CN109004078A (zh) * 2018-07-27 2018-12-14 上海天马微电子有限公司 微型led显示面板及其制作方法和显示装置
CN109148506A (zh) * 2018-08-24 2019-01-04 上海天马微电子有限公司 Micro LED转移方法及显示面板、显示装置

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