CN113126448B - 曝光装置和物品的制造方法 - Google Patents

曝光装置和物品的制造方法 Download PDF

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Publication number
CN113126448B
CN113126448B CN202110037169.4A CN202110037169A CN113126448B CN 113126448 B CN113126448 B CN 113126448B CN 202110037169 A CN202110037169 A CN 202110037169A CN 113126448 B CN113126448 B CN 113126448B
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CN
China
Prior art keywords
light
optical system
projection optical
light receiving
exposure
Prior art date
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CN202110037169.4A
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English (en)
Chinese (zh)
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CN113126448A (zh
Inventor
井上充
伊藤敦史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN113126448A publication Critical patent/CN113126448A/zh
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
CN202110037169.4A 2020-01-15 2021-01-12 曝光装置和物品的制造方法 Active CN113126448B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020004671A JP7453790B2 (ja) 2020-01-15 2020-01-15 露光装置、および物品の製造方法
JP2020-004671 2020-01-15

Publications (2)

Publication Number Publication Date
CN113126448A CN113126448A (zh) 2021-07-16
CN113126448B true CN113126448B (zh) 2025-01-07

Family

ID=76772241

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110037169.4A Active CN113126448B (zh) 2020-01-15 2021-01-12 曝光装置和物品的制造方法

Country Status (4)

Country Link
JP (1) JP7453790B2 (enExample)
KR (1) KR102800583B1 (enExample)
CN (1) CN113126448B (enExample)
TW (1) TWI836164B (enExample)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101978323A (zh) * 2008-01-16 2011-02-16 卡尔蔡司Smt股份公司 具有测量装置的用于微光刻的投射曝光系统

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3448614B2 (ja) * 1993-08-12 2003-09-22 株式会社ニコン 投影露光方法、走査型投影露光装置、及び素子製造方法
JP3459742B2 (ja) * 1996-01-17 2003-10-27 キヤノン株式会社 露光装置及びそれを用いたデバイスの製造方法
JPH10289864A (ja) * 1997-04-11 1998-10-27 Nikon Corp 投影露光装置
AU6853598A (en) * 1997-04-18 1998-11-13 Nikon Corporation Aligner, exposure method using the aligner, and method of manufacture of circuitdevice
JP3421922B2 (ja) * 2000-02-22 2003-06-30 富士写真光機株式会社 アライメント変動測定装置
JP2005294608A (ja) * 2004-04-01 2005-10-20 Nikon Corp 放電光源ユニット、照明光学装置、露光装置および露光方法
JP4844835B2 (ja) * 2004-09-14 2011-12-28 株式会社ニコン 補正方法及び露光装置
US7508489B2 (en) * 2004-12-13 2009-03-24 Carl Zeiss Smt Ag Method of manufacturing a miniaturized device
US7307262B2 (en) * 2004-12-23 2007-12-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TW200745771A (en) * 2006-02-17 2007-12-16 Nikon Corp Adjustment method, substrate processing method, substrate processing apparatus, exposure apparatus, inspection apparatus, measurement and/or inspection system, processing apparatus, computer system, program and information recording medium
US7999939B2 (en) * 2007-08-17 2011-08-16 Asml Holding N.V. Real time telecentricity measurement
US20100165309A1 (en) * 2008-07-10 2010-07-01 Nikon Corporation Deformation measuring apparatus, exposure apparatus, jig for the deformation measuring apparatus, position measuring method and device fabricating method
TW201227178A (en) * 2010-11-02 2012-07-01 Nikon Corp Liquid supply apparatus, liquid supply method, management apparatus, management method, exposure apparatus, exposure method, device fabricating system, device fabricating method, program and recording medium
JP2014135368A (ja) * 2013-01-09 2014-07-24 Canon Inc 露光装置、計測方法及びデバイスの製造方法
JP2017072678A (ja) * 2015-10-06 2017-04-13 キヤノン株式会社 露光装置、露光方法、及び物品の製造方法
JP2017172678A (ja) * 2016-03-23 2017-09-28 Ntn株式会社 極低温環境用転がり軸受

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101978323A (zh) * 2008-01-16 2011-02-16 卡尔蔡司Smt股份公司 具有测量装置的用于微光刻的投射曝光系统

Also Published As

Publication number Publication date
JP2021110905A (ja) 2021-08-02
TW202129431A (zh) 2021-08-01
KR20210092130A (ko) 2021-07-23
JP7453790B2 (ja) 2024-03-21
CN113126448A (zh) 2021-07-16
KR102800583B1 (ko) 2025-04-28
TWI836164B (zh) 2024-03-21

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