TWI836164B - 曝光裝置及物品的製造方法 - Google Patents

曝光裝置及物品的製造方法 Download PDF

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Publication number
TWI836164B
TWI836164B TW109141705A TW109141705A TWI836164B TW I836164 B TWI836164 B TW I836164B TW 109141705 A TW109141705 A TW 109141705A TW 109141705 A TW109141705 A TW 109141705A TW I836164 B TWI836164 B TW I836164B
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TW
Taiwan
Prior art keywords
light
optical system
projection optical
measurement
exposure
Prior art date
Application number
TW109141705A
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English (en)
Chinese (zh)
Other versions
TW202129431A (zh
Inventor
井上充
伊藤敦史
Original Assignee
日商佳能股份有限公司
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Publication of TW202129431A publication Critical patent/TW202129431A/zh
Application granted granted Critical
Publication of TWI836164B publication Critical patent/TWI836164B/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
TW109141705A 2020-01-15 2020-11-27 曝光裝置及物品的製造方法 TWI836164B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-004671 2020-01-15
JP2020004671A JP7453790B2 (ja) 2020-01-15 2020-01-15 露光装置、および物品の製造方法

Publications (2)

Publication Number Publication Date
TW202129431A TW202129431A (zh) 2021-08-01
TWI836164B true TWI836164B (zh) 2024-03-21

Family

ID=76772241

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109141705A TWI836164B (zh) 2020-01-15 2020-11-27 曝光裝置及物品的製造方法

Country Status (4)

Country Link
JP (1) JP7453790B2 (enExample)
KR (1) KR102800583B1 (enExample)
CN (1) CN113126448B (enExample)
TW (1) TWI836164B (enExample)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006179930A (ja) * 2004-12-23 2006-07-06 Asml Netherlands Bv リソグラフィ装置及びデバイス製造方法
TW200625014A (en) * 2004-09-14 2006-07-16 Nikon Corp Correction method and exposure device
TW200745771A (en) * 2006-02-17 2007-12-16 Nikon Corp Adjustment method, substrate processing method, substrate processing apparatus, exposure apparatus, inspection apparatus, measurement and/or inspection system, processing apparatus, computer system, program and information recording medium
TW201003053A (en) * 2008-07-10 2010-01-16 Nikon Corp Deformation measuring apparatus, exposure apparatus, jig for deformation measuring apparatus, position measuring method and device manufacturing method
JP2011510494A (ja) * 2008-01-16 2011-03-31 カール・ツァイス・エスエムティー・ゲーエムベーハー 測定手段を有するマイクロリソグラフィのための投影露光装置
TW201227178A (en) * 2010-11-02 2012-07-01 Nikon Corp Liquid supply apparatus, liquid supply method, management apparatus, management method, exposure apparatus, exposure method, device fabricating system, device fabricating method, program and recording medium

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3448614B2 (ja) * 1993-08-12 2003-09-22 株式会社ニコン 投影露光方法、走査型投影露光装置、及び素子製造方法
JP3459742B2 (ja) * 1996-01-17 2003-10-27 キヤノン株式会社 露光装置及びそれを用いたデバイスの製造方法
JPH10289864A (ja) * 1997-04-11 1998-10-27 Nikon Corp 投影露光装置
KR20010006467A (ko) * 1997-04-18 2001-01-26 오노 시게오 노광 장치, 해당 장치를 이용한 노광 방법 및 회로 장치 제조 방법
JP3421922B2 (ja) 2000-02-22 2003-06-30 富士写真光機株式会社 アライメント変動測定装置
JP2005294608A (ja) 2004-04-01 2005-10-20 Nikon Corp 放電光源ユニット、照明光学装置、露光装置および露光方法
US7508489B2 (en) 2004-12-13 2009-03-24 Carl Zeiss Smt Ag Method of manufacturing a miniaturized device
US7999939B2 (en) 2007-08-17 2011-08-16 Asml Holding N.V. Real time telecentricity measurement
JP2014135368A (ja) 2013-01-09 2014-07-24 Canon Inc 露光装置、計測方法及びデバイスの製造方法
JP2017072678A (ja) 2015-10-06 2017-04-13 キヤノン株式会社 露光装置、露光方法、及び物品の製造方法
JP2017172678A (ja) * 2016-03-23 2017-09-28 Ntn株式会社 極低温環境用転がり軸受

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200625014A (en) * 2004-09-14 2006-07-16 Nikon Corp Correction method and exposure device
JP2006179930A (ja) * 2004-12-23 2006-07-06 Asml Netherlands Bv リソグラフィ装置及びデバイス製造方法
TW200745771A (en) * 2006-02-17 2007-12-16 Nikon Corp Adjustment method, substrate processing method, substrate processing apparatus, exposure apparatus, inspection apparatus, measurement and/or inspection system, processing apparatus, computer system, program and information recording medium
JP2011510494A (ja) * 2008-01-16 2011-03-31 カール・ツァイス・エスエムティー・ゲーエムベーハー 測定手段を有するマイクロリソグラフィのための投影露光装置
TW201003053A (en) * 2008-07-10 2010-01-16 Nikon Corp Deformation measuring apparatus, exposure apparatus, jig for deformation measuring apparatus, position measuring method and device manufacturing method
TW201227178A (en) * 2010-11-02 2012-07-01 Nikon Corp Liquid supply apparatus, liquid supply method, management apparatus, management method, exposure apparatus, exposure method, device fabricating system, device fabricating method, program and recording medium

Also Published As

Publication number Publication date
KR102800583B1 (ko) 2025-04-28
JP7453790B2 (ja) 2024-03-21
CN113126448B (zh) 2025-01-07
CN113126448A (zh) 2021-07-16
KR20210092130A (ko) 2021-07-23
JP2021110905A (ja) 2021-08-02
TW202129431A (zh) 2021-08-01

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