CN113039649A - 半导体装置 - Google Patents

半导体装置 Download PDF

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CN113039649A
CN113039649A CN201880099534.0A CN201880099534A CN113039649A CN 113039649 A CN113039649 A CN 113039649A CN 201880099534 A CN201880099534 A CN 201880099534A CN 113039649 A CN113039649 A CN 113039649A
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film
organic insulating
semiconductor substrate
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insulating film
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CN113039649B (zh
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伊藤贵树
大佐贺毅
木村光太
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Abstract

在半导体衬底(1)的上表面设置有氧化膜(4)。在半导体衬底(1)的上表面设置有保护环(3)。在保护环(3)与半导体衬底(1)的外端部之间的终端区域(7)，有机绝缘膜(6)与氧化膜(4)直接接触。在终端区域(7)，在半导体衬底(1)的上表面设置有槽(8)。槽(8)被有机绝缘膜(6)填埋。

Description

半导体装置
技术领域
本发明涉及要求耐湿性的半导体装置。
背景技术
就半导体装置而言，在半导体衬底的上表面设置有氧化膜，在氧化膜之上设置有聚酰亚胺。但是，由于氧化膜与聚酰亚胺的密接性弱，因此，当持续暴露在高湿下的情况下，随着时间经过，水分从终端区域的聚酰亚胺与氧化膜的界面起行进。因此，存在在最外周的保护环与沟道截断环之间引起电场集中的问题。与此相对，提出了为了提高耐湿性而使终端区域变长(例如，参照专利文献1)。
专利文献1：日本特开2015-220334号公报
发明内容
如果使终端区域变长，则电流流过的有效区域变窄，由于高电流密度化而使损耗特性变差，芯片尺寸变大。特别地，就SiC这样的昂贵的材料而言，每单位面积的芯片成本非常昂贵，因此芯片尺寸变大这一情况会存在非常大的问题。
本发明就是为了解决上述这样的课题而提出的，其目的在于得到不使终端区域变长就能够提高耐湿性的半导体装置。
本发明涉及的半导体装置的特征在于，具有：半导体衬底；氧化膜，其设置于所述半导体衬底的上表面；保护环，其设置于所述半导体衬底的所述上表面；以及有机绝缘膜，其在所述保护环与所述半导体衬底的外端部之间的终端区域，与所述氧化膜直接接触，在所述终端区域，在所述半导体衬底的所述上表面设置有槽，所述槽被所述有机绝缘膜填埋。
发明的效果
在本发明中，在终端区域，在半导体衬底的上表面设置有槽。水分从有机绝缘膜的端部侵入而沿着槽行进，因此，水分到达最外周的保护环为止的沿面距离变长。另外，槽被有机绝缘膜填埋，因此有机绝缘膜与氧化膜的密接性提高。由此，能够防止水分从有机绝缘膜的端部起的行进，因此能够提高耐湿性。并且，能够将终端区域设计得短，因此芯片尺寸变小，能够降低成本。
附图说明
图1是表示实施方式1涉及的半导体装置的俯视图。
图2是沿图1的A-B的剖面图。
图3是表示实施方式2涉及的半导体装置的剖面图。
具体实施方式
参照附图，对实施方式涉及的半导体装置进行说明。对相同或者相应的结构要素标注相同的标号，有时省略重复说明。
实施方式1.
图1是表示实施方式1涉及的半导体装置的俯视图。半导体衬底1的中央部是电流流过的有效区域2。在有效区域2设置有晶体管或者二极管。以将有效区域2的周边包围的方式而在半导体衬底1的上表面设置有多个保护环3。
图2是沿图1的A-B的剖面图。在半导体衬底1的上表面设置有氧化膜4。半导体衬底1是硅衬底，氧化膜4是硅氧化膜。在氧化膜4之上选择性地设置有保护环3。以将保护环3覆盖的方式而选择性地设置有绝缘保护膜5。晶片状态的半导体衬底1被切割而加工成芯片状，被切割的部分成为半导体衬底1的外端部。
在氧化膜4以及绝缘保护膜5之上选择性地设置有有机绝缘膜6。有机绝缘膜6例如是聚酰亚胺。在最外周的保护环3与半导体衬底1的外端部之间的终端区域7，有机绝缘膜6与氧化膜4直接接触。有机绝缘膜6并未设置至半导体衬底1的外端部。
在本实施方式中，在终端区域7，在半导体衬底1的上表面设置有至少1个槽8。水分从有机绝缘膜6的端部侵入而沿着槽8行进，因此，水分到达最外周的保护环3为止的沿面距离变长。另外，槽8被有机绝缘膜6填埋，因此，有机绝缘膜6与氧化膜4的密接性提高。由此，能够防止水分从有机绝缘膜6的端部起的行进，因此，能够提高耐湿性。并且，能够将终端区域7设计得短，因此，芯片尺寸变小，能够降低成本。
实施方式2.
图3是表示实施方式2涉及的半导体装置的剖面图。在终端区域7，在氧化膜4与有机绝缘膜6之间选择性地设置有多个密接膜9。密接膜9与有机绝缘膜6的密接性比有机绝缘膜6与氧化膜4的密接性高。密接膜9与氧化膜4的密接性比有机绝缘膜6与氧化膜4的密接性高。通过设置该密接膜9，从而有机绝缘膜6与氧化膜4的密接性提高。并且，由于密接膜9，水分的行进的界面成为凸状，水分到达最外周的保护环3为止的沿面距离变长。其结果，能够进一步提高耐湿性。
密接膜9的一部分从有机绝缘膜6向半导体衬底1的外侧方向凸出。由此，向半导体衬底1的外侧方向施加应力时的强度变高，密接膜9难以剥离。
由于设置有多个密接膜9，因此水分的行进的界面成为凹凸状。因此，水分到达最外周的保护环3为止的沿面距离变长，因此能够提高耐湿性。因此，能够将终端区域7设计得短，因此芯片尺寸变小，能够降低成本。
密接膜9是通过CVD沉积出的四乙氧基硅烷(TEOS)膜。在TEOS膜的表面存在大量有机绝缘膜6的聚酰亚胺嵌入的凹凸。因此，与基本上没有这样的凹凸的热氧化膜等相比，密接膜9与有机绝缘膜6之间的密接性提高。
另外，优选密接膜9由与绝缘保护膜5相同材料的SinSiN构成。由此，不伴随工序追加就能形成密接膜9。
此外，半导体衬底1不限于由硅形成，也可以由与硅相比带隙大的宽带隙半导体形成。宽带隙半导体例如是碳化硅、氮化镓类材料或者金刚石。本发明对界面的电场强度被设计得高的宽带隙半导体装置特别有效。
由宽带隙半导体形成的半导体装置由于耐电压性、容许电流密度高，因此能够小型化。通过使用该小型化的半导体装置，从而组装有该半导体装置的半导体模块也能够小型化。另外，半导体装置的耐热性高，因此能够使散热器的散热鳍片小型化，能够使水冷部空冷化，因而能够使半导体模块进一步小型化。另外，半导体装置的电力损耗低且高效，因此能够使半导体模块高效化。
标号的说明
1半导体衬底，3保护环，4氧化膜，5绝缘保护膜，6有机绝缘膜，7终端区域，8槽，9密接膜

Claims (8)

1.一种半导体装置，其特征在于，具有：
半导体衬底；
氧化膜，其设置于所述半导体衬底的上表面；
保护环，其设置于所述半导体衬底的所述上表面；以及
有机绝缘膜，其在所述保护环与所述半导体衬底的外端部之间的终端区域，与所述氧化膜直接接触，
在所述终端区域，在所述半导体衬底的所述上表面设置有槽，
所述槽被所述有机绝缘膜填埋。
2.根据权利要求1所述的半导体装置，其特征在于，
在所述终端区域，还具有在所述氧化膜与所述有机绝缘膜之间设置的密接膜，
所述密接膜与所述有机绝缘膜的密接性比所述有机绝缘膜与所述氧化膜的密接性高，
所述密接膜与所述氧化膜的密接性比所述有机绝缘膜与所述氧化膜的密接性高。
3.根据权利要求2所述的半导体装置，其特征在于，
所述密接膜的一部分从所述有机绝缘膜向所述半导体衬底的外侧方向凸出。
4.根据权利要求2或3所述的半导体装置，其特征在于，
所述密接膜设置有多个。
5.根据权利要求2至4中任一项所述的半导体装置，其特征在于，
所述密接膜是四乙氧基硅烷膜。
6.根据权利要求2至4中任一项所述的半导体装置，其特征在于，
还具有将所述保护环覆盖的绝缘保护膜，
所述密接膜由与所述绝缘保护膜相同的材料构成。
7.根据权利要求1至6中任一项所述的半导体装置，其特征在于，
所述有机绝缘膜是聚酰亚胺。
8.根据权利要求1至7中任一项所述的半导体装置，其特征在于，
所述半导体衬底由宽带隙半导体构成。
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