CN113039642A - 功率半导体装置 - Google Patents

功率半导体装置 Download PDF

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CN113039642A
CN113039642A CN201980074513.8A CN201980074513A CN113039642A CN 113039642 A CN113039642 A CN 113039642A CN 201980074513 A CN201980074513 A CN 201980074513A CN 113039642 A CN113039642 A CN 113039642A
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semiconductor device
power semiconductor
terminal
current detection
circuit pattern
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平尾高志
长崎仁德
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Hitachi Ltd
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Abstract

本发明提高功率半导体装置的电流检测精度。本发明的功率半导体装置包括：绝缘基板，该绝缘基板的一个面上配置有第一导体层；半导体元件；连接到所述第一导体层的主端子；以及电流检测元件，所述电流检测元件具有在一个面上经由导体构件连接到所述半导体元件的表面电极、以及在另一个面上连接到所述第一导体层的背面电极，在将所述电流检测元件的最靠近所述主端子的边定义为第一边，并且将与第一边相对的位置的边定义为第二边时，将检测端子和所述背面电极的连接部设置在靠近所述第二边的一侧。

Description

功率半导体装置
技术领域
本发明涉及一种具有电流检测功能的功率半导体装置。
背景技术
通过在功率半导体装置上搭载用于检测在功率转换装置的导体中流动的电流的电流检测功能来使整个功率转换装置小型化。
在专利文献1中公开了通过使用分流电阻来检测电流从而使功率转换装置小型化的技术。
现有技术文献
专利文献
专利文献1：日本专利特开2011－249475号公报
发明内容
发明所要解决的技术问题
对于上述功率转换装置，当本发明人探讨使电流检测的精度更高时，发现了如下所述的问题。
在专利文献1中，由于流到导体的电流的路径与检测端子的路径重叠，因此有可能降低电流量的检测精度。
因此，提供一种用于提高功率半导体装置中的电流检测精度的技术成为问题。
解决技术问题所采用的技术方案
为了解决上述问题，本发明的功率半导体装置的特征在于，包括绝缘基板、半导体元件、主端子和电流检测元件，将与检测端子的连接部设置在靠近与电流检测元件的最靠近主端子的一边相对的位置的一边的一侧。
技术效果
根据本发明，能实现电流检测精度较高的功率半导体装置。
附图说明
图1是本实施方式的功率半导体装置的俯视图。
图2是从箭头方向观察通过图1的A-A′的平面时的功率半导体装置100的剖视图。
图3是从箭头方向观察通过图1的B-B′的平面时的功率半导体装置100的剖视图。
图4是本实施方式的分流电阻103的透视立体图。
图5示出应用本实施方式的功率半导体装置的功率转换系统500的电路结构图。
图6是示出交流输出的电流和检测电流的关系的图表。
图7示出实施方式2的功率半导体装置的剖视图。
图8是实施方式3的功率半导体装置的俯视图。
图9是另一个实施方式的功率半导体装置的俯视图。
具体实施方式
以下，参照附图对本发明的实施方式进行详细说明。
实施例1
图1是本实施方式的功率半导体装置100的俯视图。图2是从箭头方向观察通过图1的A-A′的平面时的功率半导体装置100的剖视图。图3是从箭头方向观察通过图1的B-B′的平面时的功率半导体装置100的剖视图。
如图1所示，功率半导体装置100包括下臂MOSFET101和上臂MOSFET102。下臂MOSFET101构成逆变器电路的下臂电路。上臂MOSFET102构成逆变器电路的上臂电路。本实施方式的功率半导体装置100是下臂MOSFET101和上臂MOSFET102在一个功率半导体装置中构成上臂电路和下臂电路的所谓的二合一型。
如图1所示，下臂MOSFET101连接到布线104。
构成负极侧的端子的N侧端子112连接到电路图案132。
如图2和图3所示，布线104经由分流电阻103连接到电路图案132。即，在布线104的一部分置换成分流电阻103的状态下，布线104的一部分连接到电路图案132。分流电阻103包括经由焊料207连接到电路图案132的电极203和经由焊料208连接到布线104的电极204。
此外，布线104经由焊料206连接到下臂MOSFET101的电极202。电路图案133经由焊料205连接到下臂MOSFET101的电极201。
通过测量图1所示的检测端子118和检测端子119之间的电压，从而检测流过N侧端子112的电流。检测端子118连接到电路图案132。检测端子119连接到电路图案138。
此外，本实施方式的功率半导体装置100包括构成正极侧端子的P侧端子111和传输由下臂MOSFET101和上臂MOSFET102的开关动作产生的交流电流的交流侧端子113。
此外，下臂的栅极端子114经由电路图案134和键合引线121连接到下臂MOSFET101的栅电极。下臂的栅极端子115经由电路图案135和键合引线122连接到下臂MOSFET101的开尔文源电极。
上臂的栅极端子116经由电路图案136和键合引线123连接到上臂MOSFET102的栅电极。上臂的开尔文发射极端子117经由电路图案137和键合引线124连接到上臂MOSFET102的开尔文源电极。
电路图案131连接到上臂MOSFET102和P侧端子111。电路图案133连接到下臂MOSFET101和AC侧端子113。绝缘基板141安装有电路图案131至138。
如图1和图3所示，布线105经由焊料306连接到上臂MOSFET102的电极302。电路图案131经由焊料305连接到上臂MOSFET102的电极301。此外，N侧端子112经由焊料311连接到电路图案132。
如图2和图3所示，散热面211设置在与安装有电路图案131至138的面相反一侧的绝缘基板141上。本实施方式的散热面211由与电路图案131至138同样地形成在绝缘基板141上的导体图案形成。
结合比较例说明本实施方式中的问题。假设，在电路图案132的表面内检测端子118连接到靠近N侧端子112的部位的情况下，通过将电路图案132本身的阻抗加到分流电阻103后得到的阻抗作为检测端子118和检测端子119之间的电压出现。因此，电流检测的精度可能会降低。因此，在本实施方式中，为了抑制电流检测精度的降低，改变分流电阻103周围的结构。
图4是本实施方式的分流电阻103的透视立体图。
本实施方式的分流电阻103具有面对电路图案132的一侧的、形成在靠近N侧端子112的一侧的第一边401和形成在与该第一边401相对的一侧的第二边402。此外，分流电阻103在靠近第二边402的一侧设置有电极304。如图1和图3所示，电极304经由键合引线125连接到电路图案138。因此，能减小电路图案132的阻抗的影响，并且能提高电流检测的精度。
图5示出应用本实施方式的功率半导体装置的功率转换系统500的电路结构图。
功率转换装置551设置有三个功率半导体装置，这三个功率半导体装置分别具有下臂MOSFET101和上臂MOSFET102。各个功率半导体装置对应于由交流电力的U相、V相和W相构成的三相。
功率转换装置551连接到直流电源501，并且在功率转换装置551和直流电源501相互之间交换电力。此外，功率转换装置551连接到电动机505。电动机505通过由功率转换装置551提供的三相电力来进行动作。
微机电路502通过通信用连接器506接收来自上位的控制装置的指令，并向上位的控制装置发送表示状态的数据。
下臂MOSFET101的源电极连接到滤波电容器503的负极侧的端子。上臂MOSFET102的漏电极连接到滤波电容器503的正极侧的端子。
栅极驱动电路504设置在下臂MOSFET101、上臂MOSFET102的栅电极与开尔文源电极之间，并且对下臂MOSFET101、上臂MOSFET102进行导通断开控制。微机电路502向栅极驱动电路504提供控制信号。
分流电阻103检测流过下臂MOSFET101的漏极电流。信号转换电路511将由分流电阻103检测到的检测电流转换为U相、V相、W相各自的交流布线的电流量，并将其反馈到微机电路502。
微机电路502接收来自信号转换电路511的反馈信号，产生用于控制下臂MOSFET101和上臂MOSFET102的控制信号，并将其提供给栅极驱动电路504。
说明信号转换电路511的具体的信号转换方法。图6是示出交流输出的电流和检测电流的关系的图表。
iu为U相交流输出的电流，iR为检测电流。iu为连续的波形，与此相对地iR虽然其峰值与iu相同，但iR为脉冲状的波形。能通过检测iR的峰值来运算iu的波形。即，能由信号转换电路511运算U相、V相和W相的交流布线的电流量，能将分流电阻103的检测值用于微机电路502的反馈信号。
实施例2
图7示出实施方式2的功率半导体装置的剖视图。
在本实施方式中，将实施例1中说明的功率半导体装置的布线104置换成间隔件703和形成在绝缘基板702上的电路图案701。
因此，分流电阻103除了能从散热面211的方向散热以外，还能从形成在绝缘基板702上的散热面704的方向散热。由于能从散热面211和散热面704的两侧散热，所以分流电阻103中能流过更大的电流。
根据本实施例，除了与本发明的实施例1相同的效果之外，还能使由分流电阻检测到的电流变大。
实施例3
图8是实施方式3的功率半导体装置800的剖视图。
在本实施例中，将在实施例1中说明的功率半导体装置的布线104和布线105改变为键合引线804和键合引线805。通过使用键合引线，能更容易地组装。根据本实施例，除了与本发明的实施例1相同的效果之外，还能提高安装性。
图9是另一个实施方式的功率半导体装置900的剖视图。
虽然在图1至图8的说明中利用二合一模块进行了说明，但是也可以是图9所示的由一个臂构成的一合一模块。
下臂MOSFET101连接到电路图案933。电路图案933连接到漏极端子901。源极端子902连接到电路图案932。电路图案932和电路图案933形成在绝缘基板941上。
此外，MOSFET可以是IGBT或其它功率半导体元件。作为功率半导体元件的母材的材料可以是硅或SiC。对分流电阻与布线图案的接合可以是实施例中所示的焊料接合或烧结接合。
如上所述，本发明涉及一种功率半导体装置，本发明能应用于例如混合动力汽车或电动汽车中使用的逆变器系统。本发明还能用于铁路车辆的驱动系统、一般工业的电动机驱动。
另外，本发明的技术范围并不限定于上述各实施例，在本发明的技术思想的范围内，当然能实施各种变形例。
标号说明
100功率半导体装置，101下臂MOSFET，102上臂MOSFET，103分流电阻，104布线，105布线，121键合引线，122键合引线，123键合引线，124键合引线，111P侧端子，112N侧端子，113AC侧端子，114栅极端子，115开尔文源极信号端子，116栅极信号端子，117开尔文源极信号端子，118检测端子，119检测端子，125键合引线，131电路图案，132电路图案，133电路图案，134电路图案，135电路图案，136电路图案，137电路图案，138电路图案，141绝缘基板，201电极，202电极，203电极，204电极，201焊料，205焊料，206焊料，207焊料，208焊料，211散热面，301电极，302电极，304电极，305焊料，306焊料，311焊料，211散热面，401第一边，402第二边，500功率转换系统，501直流电源，502微机电路，503滤波电容器，504栅极驱动电路，505电动机，506连接器，511信号转换电路，551功率转换装置，701电路图案，702绝缘基板，703间隔件，704散热面，800功率半导体装置，804布线，805布线，900功率半导体装置，901漏极端子，902源极端子，932电路图案，933电路图案，941绝缘基板。

Claims (5)

1.一种功率半导体装置，其特征在于，包括：
绝缘基板，该绝缘基板的一个面上配置有第一导体层；
半导体元件；
连接到所述第一导体层的主端子；以及
电流检测元件，
所述电流检测元件具有在一个面上经由导体构件连接到所述半导体元件的表面电极、以及在另一个面上连接到所述第一导体层的背面电极，
在将所述电流检测元件的最靠近所述主端子的边定义为第一边，并且将与第一边相对的位置的边定义为第二边时，
将检测端子和所述背面电极的连接部设置在靠近所述第二边的一侧。
2.如权利要求1所述的功率半导体装置，其特征在于，
将检测端子和所述表面电极的连接部设置在靠近所述第二边的一侧。
3.如权利要求1或2所述的功率半导体装置，其特征在于，
所述电流检测元件的散热面设置在所述表面电极的方向和所述背面电极的方向这两个方向上。
4.如权利要求1至3中任一项所述的功率半导体装置，其特征在于，
所述电流检测元件和所述半导体元件的连接布线是板状布线。
5.如权利要求1至3中任一项所述的功率半导体装置，其特征在于，
所述电流检测元件和所述半导体元件的连接布线是键合引线。
CN201980074513.8A 2018-11-16 2019-08-28 功率半导体装置 Pending CN113039642A (zh)

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