JP7099938B2 - パワー半導体装置 - Google Patents
パワー半導体装置 Download PDFInfo
- Publication number
- JP7099938B2 JP7099938B2 JP2018215174A JP2018215174A JP7099938B2 JP 7099938 B2 JP7099938 B2 JP 7099938B2 JP 2018215174 A JP2018215174 A JP 2018215174A JP 2018215174 A JP2018215174 A JP 2018215174A JP 7099938 B2 JP7099938 B2 JP 7099938B2
- Authority
- JP
- Japan
- Prior art keywords
- power semiconductor
- semiconductor device
- terminal
- electrode
- circuit pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/494—Connecting portions
- H01L2224/4943—Connecting portions the connecting portions being staggered
- H01L2224/49431—Connecting portions the connecting portions being staggered on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/494—Connecting portions
- H01L2224/4943—Connecting portions the connecting portions being staggered
- H01L2224/49433—Connecting portions the connecting portions being staggered outside the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73221—Strap and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Inverter Devices (AREA)
Description
負極側の端子を構成するN側端子112は、回路パターン132と接続される。
Claims (5)
- 一面に第1導体層が配置される絶縁基板と、
半導体素子と、
前記第1導体層に接続する主端子と、
電流検出素子と、を備え、
前記電流検出素子は、一面に導体部材を介して前記半導体素子に接続する表面電極と、他面に前記第1導体層に接続する裏面電極と、を有し、
前記電流検出素子の前記主端子に最も近い辺を第1辺と定義し、第1辺に対向する位置の辺を第2辺と定義した場合に、
検出端子と前記裏面電極との接続部を、前記第2辺に近い側に設けるパワー半導体装置。 - 請求項1に記載のパワー半導体装置において、
検出端子と前記表面電極との接続部を、前記第2辺に近い側に設けるパワー半導体装置。 - 請求項1または2に記載のパワー半導体装置において、
前記電流検出素子の放熱面が、前記表面電極の方向と前記裏面電極の両方向に設けられるパワー半導体装置。 - 請求項1ないし3に記載のいずれかのパワー半導体装置において、
前記電流検出素子と前記半導体素子との接続配線が板状配線であるパワー半導体装置。 - 請求項1ないし3に記載のいずれかのパワー半導体装置において、
前記電流検出素子と前記半導体素子との接続配線がボンディングワイヤであるパワー半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018215174A JP7099938B2 (ja) | 2018-11-16 | 2018-11-16 | パワー半導体装置 |
CN201980074513.8A CN113039642B (zh) | 2018-11-16 | 2019-08-28 | 功率半导体装置 |
PCT/JP2019/033728 WO2020100377A1 (ja) | 2018-11-16 | 2019-08-28 | パワー半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018215174A JP7099938B2 (ja) | 2018-11-16 | 2018-11-16 | パワー半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020087986A JP2020087986A (ja) | 2020-06-04 |
JP7099938B2 true JP7099938B2 (ja) | 2022-07-12 |
Family
ID=70730227
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018215174A Active JP7099938B2 (ja) | 2018-11-16 | 2018-11-16 | パワー半導体装置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP7099938B2 (ja) |
CN (1) | CN113039642B (ja) |
WO (1) | WO2020100377A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7407675B2 (ja) | 2020-08-18 | 2024-01-04 | 株式会社 日立パワーデバイス | パワー半導体モジュールおよび電力変換装置 |
CN116093058B (zh) * | 2023-02-28 | 2024-01-09 | 中科华艺(天津)科技有限公司 | 一种氮化镓半导体抗干扰封装结构 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006140217A (ja) | 2004-11-10 | 2006-06-01 | Toyota Motor Corp | 半導体モジュール |
JP2011249475A (ja) | 2010-05-25 | 2011-12-08 | Denso Corp | 電力半導体装置 |
JP2016144365A (ja) | 2015-02-04 | 2016-08-08 | 新電元工業株式会社 | 半導体装置 |
JP2018107364A (ja) | 2016-12-28 | 2018-07-05 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2018112472A (ja) | 2017-01-12 | 2018-07-19 | 日立オートモティブシステムズ株式会社 | 電流検出装置 |
WO2018180137A1 (ja) | 2017-03-30 | 2018-10-04 | Koa株式会社 | 電流検出用抵抗器 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001358283A (ja) * | 2000-06-13 | 2001-12-26 | Nippon Inter Electronics Corp | 電流シャント及びそれを使用した複合半導体装置 |
WO2015121900A1 (ja) * | 2014-02-11 | 2015-08-20 | 三菱電機株式会社 | 電力用半導体モジュール |
JP2017228575A (ja) * | 2016-06-20 | 2017-12-28 | 株式会社豊田自動織機 | 半導体モジュール |
-
2018
- 2018-11-16 JP JP2018215174A patent/JP7099938B2/ja active Active
-
2019
- 2019-08-28 CN CN201980074513.8A patent/CN113039642B/zh active Active
- 2019-08-28 WO PCT/JP2019/033728 patent/WO2020100377A1/ja active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006140217A (ja) | 2004-11-10 | 2006-06-01 | Toyota Motor Corp | 半導体モジュール |
JP2011249475A (ja) | 2010-05-25 | 2011-12-08 | Denso Corp | 電力半導体装置 |
JP2016144365A (ja) | 2015-02-04 | 2016-08-08 | 新電元工業株式会社 | 半導体装置 |
JP2018107364A (ja) | 2016-12-28 | 2018-07-05 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2018112472A (ja) | 2017-01-12 | 2018-07-19 | 日立オートモティブシステムズ株式会社 | 電流検出装置 |
WO2018180137A1 (ja) | 2017-03-30 | 2018-10-04 | Koa株式会社 | 電流検出用抵抗器 |
Also Published As
Publication number | Publication date |
---|---|
WO2020100377A1 (ja) | 2020-05-22 |
CN113039642A (zh) | 2021-06-25 |
CN113039642B (zh) | 2024-06-18 |
JP2020087986A (ja) | 2020-06-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8423317B2 (en) | Temperature detection method of semiconductor device and power conversion apparatus | |
US9123711B2 (en) | Wiring member and semiconductor module having the same | |
US9237653B2 (en) | Electronic circuit apparatus | |
JP6455364B2 (ja) | 半導体装置、インテリジェントパワーモジュールおよび電力変換装置 | |
JP6288769B2 (ja) | 半導体パワーモジュール、電力変換装置、およびこれを用いた移動体 | |
JP4985810B2 (ja) | 半導体装置 | |
US9431318B2 (en) | Electronic device | |
WO2016199360A1 (ja) | 半導体装置 | |
JP2018130015A (ja) | 低誘導性ハーフブリッジ装置 | |
JP7099938B2 (ja) | パワー半導体装置 | |
JP6745991B2 (ja) | 半導体パワーモジュール | |
US10884030B2 (en) | Current detection device | |
JP6339022B2 (ja) | 半導体装置、自動車 | |
US11127603B2 (en) | Semiconductor module and power conversion device | |
JP2016115834A (ja) | 電子回路装置 | |
US10804186B2 (en) | Semiconductor module and power converter | |
JP6123722B2 (ja) | 半導体装置 | |
JP6483963B2 (ja) | 電力変換装置 | |
JP2021072293A (ja) | 半導体パワーモジュール | |
JP2016144354A (ja) | 電力変換器 | |
JP2021082625A (ja) | 電子制御装置 | |
JP6493751B2 (ja) | 電力変換装置 | |
JP7396264B2 (ja) | 半導体モジュール及び電力変換装置 | |
JP2019012017A (ja) | 回路基板およびモータ制御装置 | |
JP2017183430A (ja) | スイッチング素子ユニット |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210924 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20211020 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20211026 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220628 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220630 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7099938 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |