CN112928011A - 基板处理设备、斜面罩及基板处理方法 - Google Patents

基板处理设备、斜面罩及基板处理方法 Download PDF

Info

Publication number
CN112928011A
CN112928011A CN202011412382.0A CN202011412382A CN112928011A CN 112928011 A CN112928011 A CN 112928011A CN 202011412382 A CN202011412382 A CN 202011412382A CN 112928011 A CN112928011 A CN 112928011A
Authority
CN
China
Prior art keywords
bevel
substrate processing
processing apparatus
cover
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202011412382.0A
Other languages
English (en)
Inventor
高桥祐树
石川大
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASM IP Holding BV
Original Assignee
ASM IP Holding BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASM IP Holding BV filed Critical ASM IP Holding BV
Publication of CN112928011A publication Critical patent/CN112928011A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32403—Treating multiple sides of workpieces, e.g. 3D workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

一种基板处理设备的示例包括：室；屏蔽部件，其是设置在所述室中的基座或上盖；以及斜面罩，其设置在所述室中并且具有倾斜表面，在该倾斜表面上，距所述屏蔽部件的竖直距离朝向屏蔽部件的中心侧增加。

Description

基板处理设备、斜面罩及基板处理方法
技术领域
描述了涉及基板处理设备、斜面罩及基板处理方法的示例。
背景技术
例如，在基板的正面上形成膜可能导致基板翘曲。为了抑制基板的翘曲，可以在基板的背面上形成高应力膜。此时，为了执行在基板的背面上处理同时抑制在基板的正面上处理，可以使斜面罩靠近基板的斜面。根据一示例，斜面罩已经用于抑制在基板的正面上的膜形成。如果斜面罩掩盖或夹住基板背面的外边缘，则不可能在基板的背面上执行均匀处理。例如，当在基板的背面上形成膜时，在基板上的斜面内的几毫米的区域中的膜厚度小于在基板的中心处的膜厚度。无法在基板的背面上执行均匀处理使得不可能在随后的步骤中完全夹住基板，或者导致图案未对准、不良的膜形成等。
发明内容
本文描述的一些示例可以解决上述问题。本文所述的一些示例可以提供基板处理设备、斜面罩及基板处理方法，其能够在使用斜面罩的基板处理中在基板的背面上执行基本均匀的处理同时抑制在基板的正面上处理。
在一些示例中，一种基板处理设备包括：室；屏蔽部件，其是设置在所述室中的基座或上盖；以及斜面罩，其设置在所述室中并且具有倾斜表面，在该倾斜表面上，在该倾斜表面上，距所述屏蔽部件的竖直距离朝向屏蔽部件的中心侧增加。
附图说明
图1是基板处理设备的横截面图；
图2是斜面罩的仰视图；
图3是基板处理设备的横截面图；
图4是斜面罩及其附近的放大视图；
图5是表示根据另一示例的斜面罩的横截面图；
图6是表示根据另一示例的斜面罩的横截面图；
图7是表示根据另一示例的斜面罩的横截面图；
图8是表示根据另一示例的斜面罩的横截面图；
图9是根据另一示例的基板处理设备的横截面图；以及
图10是斜面罩及其附近的放大视图。
具体实施方式
将参考附图描述基板处理设备、斜面罩及基板处理方法。相同或相应的部件由相同的附图标记表示，并且可以省略其重复描述。
实施例
图1是示出根据一示例的基板处理设备10的构造示例的剖视图。基板处理设备10包括设置在室12中的基座16。基座16固定到轴18。轴18通过提升机构上下移动，这也使得基座16能够上下移动。当基座16位于下侧时，固定至室12的基座销17突出到基座16的上表面上方。此外，当基座销16位于上侧时，基座销17位于基座16下方，因此其不突出到基座16的上表面上方。
喷淋板14放置在基座16上方。喷淋板14设置有多个狭缝14a。气体导入管22经由绝缘部件20固定至喷淋板14。从气体源供应的任意气体穿过气体导入管22和狭缝14a，并被提供到基座16上方的空间。箭头指示气体供应方向。
由上述的基座16和喷淋板14提供平行板结构。在向基座16和喷淋板14之间的空间提供气体的同时，向喷淋板14施加高频功率，由此可以在该空间中产生等离子体。
流量控制环(FCR)38例如经由O形环放置在室12上。排气管道30例如经由O形环34放置在室12上。排气管道30可以由诸如陶瓷的绝缘体形成。此外，喷淋板14例如经由O形环32放置在排气管道30上，由此室12和喷淋板14彼此电绝缘。由排气管道30和FCR38提供俯视呈环状的排气通路36。该排气通路36与排气管道24连接。可以在室12中执行压力调节的真空泵、阀等设置在排气管道24的中部或排气管道24的端部。
斜面罩39放置在室12中的FCR38上。斜面罩39是以俯视呈环状形成的环。斜面罩39的材料例如是AlN，但可以是任何绝缘体。斜面罩39包括平坦表面39a和在平坦表面39a内部的倾斜表面39b。在图1的示例中，将斜面罩39放置在FCR38上，使平坦表面39a与FCR38的上表面接触。倾斜表面39b是其上距基座16的竖直距离朝向基座16的中心侧增加的表面。换言之，倾斜表面39b是不平行于水平方向并且朝向由斜面罩39包围的部分的中心较高的表面。
图2是斜面罩39的仰视图。根据一示例，斜面罩39包括平坦表面39a和连接至平坦表面29a并位于平坦表面39a内部的倾斜表面39b。倾斜表面39b可以以俯视和仰视呈环状形成。
接下来，将描述使用基板处理设备10的基板处理方法。首先，如图1所示，将基板40引入室12中，并放置在基座销17上。例如，将保持基板40的晶片传送臂引入室12中，并且该臂在基座销上方向下移动，从而将基板40放置在基座销17上。
接下来，通过设置在室12外部的提升机构使基座16和轴18升高。图3是表示在基座16升高的状态下的基板处理设备的构造示例的剖视图。当基座16升高时，基座16和基板40彼此接触，并且基板40与基座销17分离。在基座16的向上运动期间，基座16和斜面罩39彼此接触，并且斜面罩39与FCR38分离。然后，如图3所示，基板40和斜面罩39由基座16支撑。
图4是图3的斜面罩39及其附近的放大视图。根据一示例，基板40具有作为其上形成有器件的表面的器件表面40a和作为与器件表面40a相对的表面的背面40b。基板40的外边缘部处的倾斜部是斜面40A。器件表面40a经过公知的半导体工艺以形成器件，结果，基板40可能在某种程度上翘曲。
在图4的示例中，基座16包括向上凸部16A、中间部16B和中心部16C。在这三个部分中，向上凸部16A的上表面最高。中间部16B是从上凸部16A到中心部16C的高度减小的斜坡。中心部16C的上表面是平坦表面。
在图4的示例中，斜面罩39包括主体部39A和在主体部39A的内边缘侧的下表面处的凸出部39B。在该示例中，将斜面罩39放置在基座16上，使平坦表面39a与向上凸出部16A接触。此外，倾斜表面39b与斜面40A接触。在该示例中，斜面罩39仅与斜面40A接触，并且既不与背面40b也不与器件表面40a接触。例如，通过使倾斜表面39b与斜面40A接触，可以将翘曲的基板40压靠在基座16上。根据另一示例，倾斜表面39b靠近斜面40A，但不与斜面40A接触。在这种情况下，在图4的倾斜表面39b的略上方设置倾斜表面。结果，在斜面罩39和基板40之间没有接触。
如上所述，将基板40放置在基座16上，使得器件表面40a和基座16彼此面对。接下来，在基座根据需要移动到处理位置之后，对背面40b进行等离子体处理。交替地或同时地进行向基座16与喷淋板14之间的空间供应气体和向喷淋板14施加高频功率。通过在该空间中产生等离子体，执行在背面40b上的膜形成、在背面40b上的蚀刻处理、对背面40b上的膜进行改性等。根据一示例，这种等离子体处理被施加到整个背面40b。然而，由于斜面罩39与斜面40A接触或接近，因此在斜面40A上没有明显的等离子体处理。根据一示例，通过利用等离子体处理在整个背面40b上形成膜，可以避免在背面上出现任何台阶。
在上述示例中，等离子体由平行板结构产生，但等离子体可以由另一方法产生。在图1的示例中，采用喷淋板14作为与基座连接设置的等离子体单元。然而，公知的微波等离子体产生设备或公知的感应耦合等离子体设备可以用作如上所述的等离子体单元。
图5是示出根据另一示例的斜面罩39的剖视图。凸出部39B的下表面的倾斜表面包括平坦倾斜表面39b和凹入弯曲表面39c。弯曲表面39c是与斜面40A接触或接近的表面。根据一示例，弯曲表面39c使得凸出部39B和斜面40A之间能够表面接触，或者抑制气体通过凸出部39B和斜面40A之间的间隙侵入。
图6是示出根据另一示例的斜面罩39的剖视图。凹入弯曲表面39d设置为凸出部39B的下表面的倾斜表面。在该示例中，凸出部39B的整个下表面用作弯曲表面39d。因此，即使当基板40未对准时，弯曲表面39d和斜面40A也可以彼此接触或接近。
通过使图5和6的弯曲表面的曲率与斜面40A的曲率一致或接近，可以进一步抑制气体通过凸出部39B与斜面40A之间的间隙侵入。
图7是示出根据另一示例的斜面罩39的剖视图。倾斜表面39b和凸出弯曲表面39e设置为凸出部39B的下表面的倾斜表面。凸出弯曲表面39e是与斜面40A接触或接近的表面。
图8是示出根据另一示例的斜面罩39的剖视图。凸出弯曲表面39f设置为凸出部39B的下表面的倾斜表面。凸出部38B的整个下表面用作凸出弯曲表面39f。
根据图7和8的示例，通过设置凸出弯曲表面39e或凸出弯曲表面39f，斜面罩39和斜面40A可以可靠地彼此接触或足够接近。
图9是根据另一示例的基板处理设备的剖视图。该基板处理设备是平行板型等离子体处理设备。门13附接到室12，以便能够向室12的内部提供基板或从室12中取出基板。室12可以设置为双室模块(DCM)的一部分或四室模块(QCM)的一部分。上盖80设置在室10内。根据一示例，上盖80设置为接地电极。接地电极是用于接地的电极。
上盖80包括轴部80a和连接至轴部80a的盘部80b。轴部80a固定在能够沿z正负方向移动的第一提升机构51处。根据一示例，第一提升机构51由固定在轴部80a处的板51a和固定在室12处的板51c提供，轴部80a固定在波纹管51b的上端，室12固定在波纹管51b的下端。作为第一提升机构51，可以采用使上盖80在室10内上下移动的各种构造。
盘部80b在俯视图中具有圆形或基本圆形形状。盘部80b的下表面(其是上盖80的下表面)具有例如第一下表面80c和第二下表面80d，其围绕第一下表面80c并且位于第一下表面80c下方。因此，盘部80b的下表面具有在中心具有凹痕的形状。
作为接地电极的上盖80在平行板结构中用作上电极。为了实现等离子体耦合并防止或减少放电，可以使第一下表面80c和第二下表面80d之间的高度差例如等于或小于1mm。
斜面罩90设置在室12内。斜面罩90包括平坦表面90a和被平坦表面90a围绕的倾斜表面90b。倾斜表面90b是距上盖80的竖直距离朝向上盖80的中心侧增加的表面。换句话说，倾斜表面90b是与水平方向不平行并且朝向由斜面罩90围绕的部分的中心高度减小的表面。
根据一示例，斜面罩90由支撑杆91支撑或悬挂。支撑杆91固定至由马达52驱动的第二提升机构53。第二提升机构53构造成使支撑杆91和斜面罩90在室10内上下移动。换句话说，支撑杆91和斜面罩90可以通过马达52和提升机构53上下移动。根据一示例，第二提升机构53由固定在支撑杆91处的板53a和固定在室12处的板53c提供，支撑杆91固定在波纹管53b的上端，室12固定在波纹管53b的下端。作为第二提升机构53，可以采用使斜面罩90在室12内上下移动的各种构造。
支撑杆91和斜面罩90可以与例如电介质体形成为一体。斜面罩90具有俯视环状。斜面罩90包括环形平坦表面90a和位于上盖80正下方的倾斜表面90b。在一些示例中，如图9所示，平坦表面90a的高度等于或高于倾斜表面90b的高度。平坦表面90a和倾斜表面90b之间的高度差例如大于待处理的基板40的厚度。根据另一示例，如图10所示，平坦表面90a的高度可以低于倾斜表面90b的高度。
图10是斜面罩90及其附近的放大视图。斜面罩90包括主体部90A和在主体部90A的内边缘侧的上表面处的凸出部90B。主体部90A具有平坦表面90a，凸出部90B具有倾斜表面90b。倾斜表面90b是其上距主体部90A的竖直距离朝向斜面罩90的中心侧减小的倾斜表面。在一些示例中，倾斜的第三下表面80e接触斜面40A。根据另一示例，省略了第三下表面80e，使得上盖80不接触基板40。
倾斜表面90b与斜面40A接触，由此基板40由斜面罩90支撑。根据一示例，斜面罩90仅接触基板40的斜面40A，而不接触基板40的除斜面40A以外的任何部分。因此，基板40的背面40b被暴露，从而可以在整个背面40b上进行等离子体处理。具有上述各种形状的倾斜表面可以用作倾斜表面90b。
图9示出位于室12的内壁附近的旋转臂92。旋转臂92设置成将基板传送到构成例如QCM的四个室内。基板处理设备包括等离子体单元，其构造为在上盖80和斜面罩90下方的区域中产生等离子体。在图9的示例中，等离子体单元包括喷淋板93、气体源94和95以及RF电源96。喷淋板93设置在上盖80的下方，以面对上盖80。喷淋板93包括板93a和93c，其具有用于从气体源94和95沿z正方向提供气体的狭缝，以及设置在板93a和93b之间的间隔件93b。整个喷淋板93可以由金属形成。根据另一示例，至少板93c由金属形成。气体源94和95提供等离子体处理所需的气体。RF电源96向喷淋板93提供用于使气体处于等离子体状态的高频功率。以这种方式，基板处理设备可以利用包括上盖80和喷淋板93的平行板结构来进行等离子体处理。
在一些示例中，例如通过使第一提升机构51移动的马达50向上撤离上盖80。此外，例如通过使第二提升机构53移动的马达52向上撤离斜面罩90。之后，通过旋转臂92旋转，将作为旋转臂92的一部分的支撑销设置到室12内的基板接收位置。通过旋转臂92旋转，将用于支撑基板的支撑销设置到四个室之一。支撑销可以设置在由斜面罩90围绕的位置。然后，在将斜面罩90向下移动到支撑销的上端下方之后，将基板放置在设置在上盖80正下方的支撑销上。然后，通过使斜面罩90向上移动，倾斜表面90b与斜面40A接触。作为该接触的结果，支撑销与基板40分离，并且通过旋转臂92的旋转而从上盖80的正下方的位置撤离。
然后，使平坦表面90a与上盖80紧密接触，同时避免上盖80与基板40之间的接触。在该示例中，通过使上盖80向下移动，使平坦表面90a与第二下表面80d紧密接触。根据一示例，可以通过将第一下表面80c设置成位于第二下表面80d上方来防止上盖80与基板40之间的接触。
平坦表面90a位于第二下表面80d的紧下方，并且当第二下表面80d与平坦表面90a接触时，阻止气体流过上盖80和斜面罩90之间的空间。在另一示例中，在上盖80的盘部80b的下表面被制成平坦的情况下，由于上盖的下表面接触平坦表面90a，因此阻止气体流过上盖80的下表面和平坦表面90a之间的空间。
在一些示例中，由基板40、斜面罩90和上盖80围绕的空间变为封闭空间。在这种情况下，从气体源94和95供应的气体以及设置在平行板之间的等离子体实际上没有被提供给该封闭空间。
然后，在基板40的背面40b上进行等离子体处理。在一些示例中，可以通过避免基板40和上盖80之间的接触来保护器件表面40a。可以通过在上盖80的下表面上设置凹入部来确保避免这种接触。根据一示例，通过等离子体处理在基板40的背面40b处形成的膜减轻了基板40的翘曲。
在一些前述示例中，作为基座或上盖的屏蔽部件面对基板的器件表面。当屏蔽部件是基座时，基座16与基板40彼此接触，并且基板40的斜面40A与斜面罩39之间的接触可能不是必需的。另一方面，当屏蔽部件是上盖80时，斜面罩90和基板40的斜面40A彼此接触，并且基板40和上盖80之间的接触可能不是必需的。
在每个前述示例中描述的斜面罩的至少部分倾斜表面在仰视图中可以是圆形的，或者可以具有考虑到切口或定向平面的形状。具体地，可以调节斜面罩的倾斜表面，使得凹口或定向平面和斜面罩的倾斜表面可以彼此接触或接近。

Claims (16)

1.一种基板处理设备，包括：
室；
屏蔽部件，其是设置在所述室中的基座或上盖；以及
斜面罩，其设置在所述室中并且具有倾斜表面，在该倾斜表面上，距所述屏蔽部件的竖直距离朝向屏蔽部件的中心侧增加。
2.根据权利要求1所述的基板处理设备，其中，所述倾斜表面在平面图中形成为环状。
3.根据权利要求1所述的基板处理设备，其中，所述倾斜表面具有平坦表面。
4.根据权利要求1所述的基板处理设备，其中，所述倾斜表面具有凹入弯曲表面。
5.根据权利要求1所述的基板处理设备，其中，所述倾斜表面具有凸出弯曲表面。
6.根据权利要求1所述的基板处理设备，还包括与所述斜面罩的下表面接触的流量控制环。
7.根据权利要求1所述的基板处理设备，还包括用于使所述斜面罩上下移动的提升机构。
8.根据权利要求1所述的基板处理设备，还包括与所述屏蔽部件连接设置的等离子体单元。
9.根据权利要求1所述的基板处理设备，其中，所述遮蔽部件是所述基座，并且所述斜面罩具有构造成与在所述倾斜表面之外的所述基座的上表面接触的平坦表面。
10.一种斜面罩，包括：
具有环形形状的主体部；以及
在所述主体部的内边缘侧的下表面或上表面处的凸部，其中，所述凸部具有倾斜表面，在该倾斜表面上，距所述主体部的距离朝向所述斜面罩的中心侧减小。
11.根据权利要求10所述的斜面罩，其中，所述倾斜表面在平面图中形成为环状。
12.根据权利要求10所述的斜面罩，其中，所述倾斜表面具有平坦表面。
13.根据权利要求10所述的斜面罩，其中，所述倾斜表面具有凹入弯曲表面。
14.根据权利要求10所述的斜面罩，其中，所述倾斜表面具有凸出弯曲表面。
15.一种用于基板的基板处理方法，所述基板具有作为其上形成有器件的表面的器件表面和作为与所述器件表面相对的表面的背面，包括：
使所述器件表面面对作为基座或上盖的屏蔽部件；
使斜面罩的倾斜表面与所述基板的斜面接触或接近；以及
对所述背面进行等离子体处理。
16.根据权利要求15所述的基板处理方法，其中，在整个所述背面上进行所述等离子体处理。
CN202011412382.0A 2019-12-06 2020-12-04 基板处理设备、斜面罩及基板处理方法 Pending CN112928011A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962945061P 2019-12-06 2019-12-06
US62/945,061 2019-12-06

Publications (1)

Publication Number Publication Date
CN112928011A true CN112928011A (zh) 2021-06-08

Family

ID=76163628

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011412382.0A Pending CN112928011A (zh) 2019-12-06 2020-12-04 基板处理设备、斜面罩及基板处理方法

Country Status (4)

Country Link
US (1) US20210175052A1 (zh)
JP (1) JP2021091968A (zh)
KR (1) KR20210072697A (zh)
CN (1) CN112928011A (zh)

Families Citing this family (166)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
CN111316417B (zh) 2017-11-27 2023-12-22 阿斯莫Ip控股公司 与批式炉偕同使用的用于储存晶圆匣的储存装置
JP7206265B2 (ja) 2017-11-27 2023-01-17 エーエスエム アイピー ホールディング ビー．ブイ． クリーン・ミニエンバイロメントを備える装置
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
CN111630203A (zh) 2018-01-19 2020-09-04 Asm Ip私人控股有限公司 通过等离子体辅助沉积来沉积间隙填充层的方法
TWI799494B (zh) 2018-01-19 2023-04-21 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US11685991B2 (en) 2018-02-14 2023-06-27 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
KR20210024462A (ko) 2018-06-27 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 금속 함유 재료를 형성하기 위한 주기적 증착 방법 및 금속 함유 재료를 포함하는 필름 및 구조체
WO2020003000A1 (en) 2018-06-27 2020-01-02 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
KR20200030162A (ko) 2018-09-11 2020-03-20 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
CN110970344A (zh) 2018-10-01 2020-04-07 Asm Ip控股有限公司 衬底保持设备、包含所述设备的系统及其使用方法
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (ko) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP2020096183A (ja) 2018-12-14 2020-06-18 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
TWI819180B (zh) 2019-01-17 2023-10-21 荷蘭商Ａｓｍ 智慧財產控股公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
KR20200102357A (ko) 2019-02-20 2020-08-31 에이에스엠 아이피 홀딩 비.브이. 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법
TW202104632A (zh) 2019-02-20 2021-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用來填充形成於基材表面內之凹部的循環沉積方法及設備
JP2020136678A (ja) 2019-02-20 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材表面内に形成された凹部を充填するための方法および装置
JP2020133004A (ja) 2019-02-22 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材を処理するための基材処理装置および方法
KR20200108248A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOCN 층을 포함한 구조체 및 이의 형성 방법
KR20200108242A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
KR20200116033A (ko) 2019-03-28 2020-10-08 에이에스엠 아이피 홀딩 비.브이. 도어 개방기 및 이를 구비한 기판 처리 장치
KR20200116855A (ko) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP2020188254A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
JP2020188255A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
KR20200141003A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 가스 감지기를 포함하는 기상 반응기 시스템
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
KR20210005515A (ko) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP2021015791A (ja) 2019-07-09 2021-02-12 エーエスエム アイピー ホールディング ビー．ブイ． 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR20210010307A (ko) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210010820A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
CN112309843A (zh) 2019-07-29 2021-02-02 Asm Ip私人控股有限公司 实现高掺杂剂掺入的选择性沉积方法
CN112309899A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
CN112309900A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
CN112323048B (zh) 2019-08-05 2024-02-09 Asm Ip私人控股有限公司 用于化学源容器的液位传感器
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
JP2021031769A (ja) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． 成膜原料混合ガス生成装置及び成膜装置
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210029090A (ko) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR20210029663A (ko) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
TW202129060A (zh) 2019-10-08 2021-08-01 荷蘭商Ａｓｍ Ｉｐ控股公司 基板處理裝置、及基板處理方法
TW202115273A (zh) 2019-10-10 2021-04-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成光阻底層之方法及包括光阻底層之結構
KR20210045930A (ko) 2019-10-16 2021-04-27 에이에스엠 아이피 홀딩 비.브이. 실리콘 산화물의 토폴로지-선택적 막의 형성 방법
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (ko) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
KR20210050453A (ko) 2019-10-25 2021-05-07 에이에스엠 아이피 홀딩 비.브이. 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (ko) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (ko) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
CN112951697A (zh) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 基板处理设备
KR20210065848A (ko) 2019-11-26 2021-06-04 에이에스엠 아이피 홀딩 비.브이. 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법
CN112885693A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
CN112885692A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
JP2021090042A (ja) 2019-12-02 2021-06-10 エーエスエム アイピー ホールディング ビー．ブイ． 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210078405A (ko) 2019-12-17 2021-06-28 에이에스엠 아이피 홀딩 비.브이. 바나듐 나이트라이드 층을 형성하는 방법 및 바나듐 나이트라이드 층을 포함하는 구조
KR20210080214A (ko) 2019-12-19 2021-06-30 에이에스엠 아이피 홀딩 비.브이. 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
JP2021109175A (ja) 2020-01-06 2021-08-02 エーエスエム・アイピー・ホールディング・ベー・フェー ガス供給アセンブリ、その構成要素、およびこれを含む反応器システム
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
KR20210095050A (ko) 2020-01-20 2021-07-30 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
TW202130846A (zh) 2020-02-03 2021-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成包括釩或銦層的結構之方法
TW202146882A (zh) 2020-02-04 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
TW202203344A (zh) 2020-02-28 2022-01-16 荷蘭商Ａｓｍ Ｉｐ控股公司 專用於零件清潔的系統
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
KR20210117157A (ko) 2020-03-12 2021-09-28 에이에스엠 아이피 홀딩 비.브이. 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법
KR20210124042A (ko) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TW202146689A (zh) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 阻障層形成方法及半導體裝置的製造方法
TW202145344A (zh) 2020-04-08 2021-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
TW202146831A (zh) 2020-04-24 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法
TW202140831A (zh) 2020-04-24 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含氮化釩層及包含該層的結構之方法
KR20210134226A (ko) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
KR20210141379A (ko) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
KR20210143653A (ko) 2020-05-19 2021-11-29 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210145078A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
TW202200837A (zh) 2020-05-22 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基材上形成薄膜之反應系統
TW202201602A (zh) 2020-05-29 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202218133A (zh) 2020-06-24 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含矽層之方法
TW202217953A (zh) 2020-06-30 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
KR20220010438A (ko) 2020-07-17 2022-01-25 에이에스엠 아이피 홀딩 비.브이. 포토리소그래피에 사용하기 위한 구조체 및 방법
TW202204662A (zh) 2020-07-20 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於沉積鉬層之方法及系統
TW202212623A (zh) 2020-08-26 2022-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成金屬氧化矽層及金屬氮氧化矽層的方法、半導體結構、及系統
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
TW202229613A (zh) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 於階梯式結構上沉積材料的方法
KR20220053482A (ko) 2020-10-22 2022-04-29 에이에스엠 아이피 홀딩 비.브이. 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
TW202235675A (zh) 2020-11-30 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 注入器、及基板處理設備
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
TW202231903A (zh) 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4236882B2 (ja) * 2001-08-01 2009-03-11 東京エレクトロン株式会社 ガス処理装置およびガス処理方法
JP4841873B2 (ja) * 2005-06-23 2011-12-21 大日本スクリーン製造株式会社 熱処理用サセプタおよび熱処理装置

Also Published As

Publication number Publication date
JP2021091968A (ja) 2021-06-17
US20210175052A1 (en) 2021-06-10
KR20210072697A (ko) 2021-06-17

Similar Documents

Publication Publication Date Title
CN112928011A (zh) 基板处理设备、斜面罩及基板处理方法
KR100469047B1 (ko) 처리장치, 상부전극유니트와 그 사용방법 및 전극유니트와 그 제조방법
JP7105666B2 (ja) プラズマ処理装置
KR100635975B1 (ko) 플라즈마 처리 장치 및 방법과, 플라즈마 처리 장치용 링 부재
KR101432562B1 (ko) 기판 처리 장치 및 기판 처리 방법
KR101283830B1 (ko) 전극 피스의 독립적 움직임을 이용한 에칭 레이트 균일성개선
KR102242988B1 (ko) 플라즈마 처리장치
TWI633573B (zh) Plasma processing device and method
KR20020008780A (ko) 기판을 디처킹하기 위한 방법 및 장치
KR20080038311A (ko) 기판 처리 방법 및 기판 처리 장치
US20210066052A1 (en) Plasma processing apparatus
US11538715B2 (en) Stage and substrate processing apparatus
JPH09283498A (ja) 減圧処理装置
KR101568735B1 (ko) 엘시디용 서셉터 및 섀도우프레임 기능을 구비한 히터
CN111172515A (zh) 清洁方法和成膜方法
KR20190059226A (ko) 기판 적재대
JP4669137B2 (ja) 分割可能な電極及びこの電極を用いたプラズマ処理装置
TWI773740B (zh) 濺鍍裝置
KR20080092766A (ko) 기판 지지대 및 이를 구비하는 플라즈마 처리 장치
KR102402497B1 (ko) 개선된 증착 균일성을 위해 다양한 프로파일을 갖는 측부들을 갖는 섀도우 프레임
JP7214021B2 (ja) プラズマ処理装置、及び被処理体の搬送方法
KR102340104B1 (ko) 기판 처리 장치 및 기판 처리 방법
KR20150088211A (ko) 엘시디용 서셉터 및 섀도우프레임 기능을 구비한 히터
US20230128473A1 (en) Method of transporting workpiece and processing apparatus
US20220336194A1 (en) Plasma processing apparatus

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination