CN1128893C - 腐蚀设备 - Google Patents

腐蚀设备 Download PDF

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Publication number
CN1128893C
CN1128893C CN95121846A CN95121846A CN1128893C CN 1128893 C CN1128893 C CN 1128893C CN 95121846 A CN95121846 A CN 95121846A CN 95121846 A CN95121846 A CN 95121846A CN 1128893 C CN1128893 C CN 1128893C
Authority
CN
China
Prior art keywords
substrate
chamber
active layer
semiconductor processing
tft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN95121846A
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English (en)
Chinese (zh)
Other versions
CN1136599A (zh
Inventor
山崎舜平
须泽英臣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN1136599A publication Critical patent/CN1136599A/zh
Application granted granted Critical
Publication of CN1128893C publication Critical patent/CN1128893C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Thin Film Transistor (AREA)
  • Drying Of Semiconductors (AREA)
CN95121846A 1994-11-26 1995-11-25 腐蚀设备 Expired - Fee Related CN1128893C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP6315473A JPH08153711A (ja) 1994-11-26 1994-11-26 エッチング装置
JP315473/94 1994-11-26
JP315473/1994 1994-11-26

Related Child Applications (2)

Application Number Title Priority Date Filing Date
CNB991107772A Division CN1251331C (zh) 1994-11-26 1999-08-05 半导体器件
CN99117536A Division CN1248787A (zh) 1994-11-26 1999-08-05 制造半导体器件的方法

Publications (2)

Publication Number Publication Date
CN1136599A CN1136599A (zh) 1996-11-27
CN1128893C true CN1128893C (zh) 2003-11-26

Family

ID=18065785

Family Applications (4)

Application Number Title Priority Date Filing Date
CN95121846A Expired - Fee Related CN1128893C (zh) 1994-11-26 1995-11-25 腐蚀设备
CNB2006100054399A Expired - Fee Related CN100481466C (zh) 1994-11-26 1995-11-25 半导体器件
CN99117536A Pending CN1248787A (zh) 1994-11-26 1999-08-05 制造半导体器件的方法
CNB991107772A Expired - Lifetime CN1251331C (zh) 1994-11-26 1999-08-05 半导体器件

Family Applications After (3)

Application Number Title Priority Date Filing Date
CNB2006100054399A Expired - Fee Related CN100481466C (zh) 1994-11-26 1995-11-25 半导体器件
CN99117536A Pending CN1248787A (zh) 1994-11-26 1999-08-05 制造半导体器件的方法
CNB991107772A Expired - Lifetime CN1251331C (zh) 1994-11-26 1999-08-05 半导体器件

Country Status (4)

Country Link
JP (1) JPH08153711A (enrdf_load_stackoverflow)
KR (1) KR100313386B1 (enrdf_load_stackoverflow)
CN (4) CN1128893C (enrdf_load_stackoverflow)
TW (1) TW279249B (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3336975B2 (ja) * 1998-03-27 2002-10-21 日本電気株式会社 基板処理方法
DE10229037A1 (de) 2002-06-28 2004-01-29 Robert Bosch Gmbh Vorrichtung und Verfahren zur Erzeugung von Chlortrifluorid und Anlage zur Ätzung von Halbleitersubstraten mit dieser Vorrichtung
JP4134671B2 (ja) * 2002-10-17 2008-08-20 松下電器産業株式会社 プラズマ処理方法
KR101225312B1 (ko) * 2005-12-16 2013-01-22 엘지디스플레이 주식회사 프로세스 장치
US8207026B2 (en) * 2009-01-28 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and manufacturing method of display device
CN102074157B (zh) * 2011-01-07 2012-01-11 华南理工大学 一种敷铜板腐蚀设备
JP5924901B2 (ja) * 2011-10-17 2016-05-25 Hoya株式会社 転写用マスクの製造方法
KR102030797B1 (ko) 2012-03-30 2019-11-11 삼성디스플레이 주식회사 박막 트랜지스터 표시판 제조 방법
WO2016056300A1 (ja) * 2014-10-10 2016-04-14 関東電化工業株式会社 ケイ素化合物用エッチングガス組成物及びエッチング方法
JP7072440B2 (ja) 2018-05-16 2022-05-20 東京エレクトロン株式会社 シリコン含有膜のエッチング方法、コンピュータ記憶媒体、及びシリコン含有膜のエッチング装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4498953A (en) * 1983-07-27 1985-02-12 At&T Bell Laboratories Etching techniques
US5178721A (en) * 1990-08-09 1993-01-12 Fujitsu Limited Process and apparatus for dry cleaning by photo-excited radicals
US5320704A (en) * 1990-11-28 1994-06-14 Tokyo Electron Limited Plasma etching apparatus

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0410621A (ja) * 1990-04-27 1992-01-14 Kawasaki Steel Corp 窒化シリコン膜のエッチング処理方法、及びその装置
JPH04206822A (ja) * 1990-11-30 1992-07-28 Mitsubishi Electric Corp 半導体製造装置
JP3176118B2 (ja) * 1992-03-27 2001-06-11 株式会社東芝 多室型基板処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4498953A (en) * 1983-07-27 1985-02-12 At&T Bell Laboratories Etching techniques
US5178721A (en) * 1990-08-09 1993-01-12 Fujitsu Limited Process and apparatus for dry cleaning by photo-excited radicals
US5320704A (en) * 1990-11-28 1994-06-14 Tokyo Electron Limited Plasma etching apparatus

Also Published As

Publication number Publication date
CN1251331C (zh) 2006-04-12
CN100481466C (zh) 2009-04-22
CN1136599A (zh) 1996-11-27
KR100313386B1 (ko) 2003-06-12
JPH08153711A (ja) 1996-06-11
TW279249B (enrdf_load_stackoverflow) 1996-06-21
KR960019566A (ko) 1996-06-17
CN1825600A (zh) 2006-08-30
CN1248787A (zh) 2000-03-29
CN1245976A (zh) 2000-03-01

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GR01 Patent grant
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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20031126

Termination date: 20121125