CN112805812A - 具有深度调制角度光栅的光学组件及其形成方法 - Google Patents
具有深度调制角度光栅的光学组件及其形成方法 Download PDFInfo
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Abstract
一种在基板中形成斜角结构的方法。所述方法可包括通过在设置于所述基板的基板基底上的掩模层中蚀刻斜角掩模特征而形成掩模的操作,所述斜角掩模特征具有相对于所述基板的主表面的垂直线以非零倾斜角定向的侧壁。所述方法可包括在所述掩模就位的情况下蚀刻所述基板,所述蚀刻包括引导轨迹相对于所述主表面的垂直线以非零入射角布置的离子。
Description
技术领域
本发明涉及一种光学组件,且更具体而言涉及一种在光学透镜中形成可变光栅的方式。
背景技术
斜角结构可利用各种蚀刻方式及光刻方式形成于基板中并用于各种应用。光学透镜因具有各种优点而长期以来用于操纵光。近来,微绕射光栅(micro-diffractiongrating)已用于全像装置以及增强/虚拟现实(augmented/virtual reality,AR&VR)装置中。可通过相对于基板主表面(例如基板平面)的垂直线以非零角在光栅层内产生斜角特征阵列而在基板上形成斜角光栅。可通过在光栅层上设置掩模的情况下使用指向性离子蚀刻所述光栅层而形成光栅,其中掩模具有特征阵列以界定斜角结构的间距及宽度。当在基板层内蚀刻斜角结构时,斜角结构的侧壁可能随着蚀刻进行至基板层更深处而改变倾斜度,从而导致非理想形状。另外,由于离子被掩模特征遮蔽,因此界定基板结构的沟槽的宽度可能小于期望。
因此,针对至少以上考虑提供了本发明。
发明内容
在各种实施例中,提供在基板中形成斜角结构的技术。根据一个实施例,一种在基板中形成斜角结构的方法可包括通过在设置于所述基板的基板基底上的掩模层中蚀刻斜角掩模特征而形成掩模。所述斜角掩模特征可具有相对于所述基板的主表面的垂直线以非零倾斜角定向的侧壁。所述方法可包括在所述掩模就位的情况下蚀刻所述基板,所述蚀刻包括引导轨迹相对于所述主表面的垂直线以非零入射角布置的离子。
在另一实施例中,一种形成光学光栅的方法可包括:提供基板,所述基板包括光栅层;在所述基板上沈积掩模层;通过在所述掩模层中蚀刻斜角掩模特征而形成掩模。所述斜角掩模特征可具有相对于所述基板的主表面的垂直线以非零倾斜角定向的侧壁。所述方法可包括在所述掩模就位的情况下蚀刻所述光栅层,所述蚀刻包括引导轨迹相对于所述主表面的垂直线以非零入射角布置且平行于所述非零倾斜角的离子。
在另一实施例中,一种在基板中形成斜角结构的方法可包括:提供基板;在所述基板上沈积掩模层;以及在所述掩模层的外表面上沈积掩模形成层。所述方法可包括:在所述掩模形成层就位的情况下在所述掩模层中蚀刻斜角掩模特征;以及自所述掩模层的所述外表面移除所述掩模形成层。所述方法亦可包括:在移除所述掩模形成层之后,在所述掩模就位的情况下蚀刻所述基板,所述蚀刻包括引导轨迹相对于所述基板的主表面的垂直线以非零入射角布置的离子。
附图说明
附图示出本发明的示例性方式,包括本发明的原理的实际应用,附图如下所示:
图1A至图1H示出根据本发明一些实施例的具有斜角结构的组件的制作中的各种阶段。
图1I示出图1F所示结构的变型。
图2示出根据本发明实施例的使用斜角掩模形成斜角结构的几何结构的细节。
图3A及图3B分别示出根据本发明实施例的处理设备的侧视图及俯视图。
图4示出根据本发明实施例的制程流程。
附图未必按比例绘制。附图仅为代表,而非旨在描绘本发明的具体参数。附图旨在示出本发明的示例性实施例,且因此不应被理解为对范围进行限制。在附图中,相同的编号表示相同的组件。
具体实施方式
现在将在下文中参照附图来更充分地阐述本发明实施例,在附图中示出了一些实施例。本发明的目标可实施为诸多不同形式而不应被视为仅限于本文所说明的实施例。提供该些实施例是为了使此揭露内容将透彻及完整,且将向熟习此项技术者充分传达所述目标的范围。在所有附图中,相同的数字指代相同的组件。
除非另外指明,否则如本文中所使用的以单数陈述且前面带有词语“一(a或an)”的组件或操作被理解为可能包括多个组件或操作。此外,本发明所提及的“一个实施例”或“一些实施例”可被解释为包括同样包含所陈述特征的附加实施例的存在。
本文中的实施例提供在基板中形成斜角结构(包括形成光学光栅)的新颖方法。
现在转至图1A-1H,其示出根据本发明实施例的在斜角结构的制作期间的不同情形下的基板100的侧面剖视图。在各种非限制性实施例中,如本文中所述的斜角结构可表示斜角沟槽、斜角通孔、斜角光栅(例如光学光栅)或其他斜角特征。在图1A中,基板100包括基板基底102、设置于基板基底102上的掩模层104、设置于掩模层104上的掩模形成层106及设置于掩模形成层106上的图案化层108。在一些实施例中,掩模层104可为例如氮化硅、氮化钛等硬掩模材料,或者可为层的组合。在一些实施例中,基板基底102可由例如氧化硅、氮化硅、硅或其他材料等一个层或多个层形成。所述实施例并非仅限于此上下文。
根据各种实施例,掩模形成层106可为大体与掩模层104不同的任何合适的材料。作为其中掩模层104为氮化物的实例,掩模形成层可为氧化硅(SiO2)。图案化层108可由例如光刻胶等合适的材料形成。由此,如所示,可使用例如光刻等已知技术将图案化层108图案化成图案化特征108A,所述特征用于将位于图案化层108下方的掩模形成层106图案化。在图1A所示情形中,将蚀刻剂110引导至基板100,且蚀刻剂110可影响掩模形成层106,以在图案化层108中的开口中蚀刻掩模形成层106。蚀刻剂110可为已知的反应性离子蚀刻气体混合物以选择性地且指向性地沿Z轴蚀刻掩模形成层106。
转至图1B,其示出在已根据图1A所示制程将掩模形成层106图案化而在掩模形成层106中形成图案化特征阵列之后的后续情形。图案化层108已被移除而留下设置于掩模层104之上的特征阵列(被示为掩模形成特征106A)。在图1B所示情形中,执行斜角蚀刻以在掩模层104内图案化斜角特征。掩模形成特征106A可具有沿Z轴定向的大体垂直的侧壁。在图1B中,将斜角蚀刻离子112引导至掩模形成层106中的开口,其中如所示,斜角蚀刻离子112撞击掩模层104。在一些实施例中,可在已知的反应性离子蚀刻气体混合物中提供斜角蚀刻离子112,以相对于掩模形成层106选择性地蚀刻掩模层104,且另外可相对于基板基底102而言为选择性的。仅出于例示目的,当掩模形成层106为SiO2且掩模层为TiN时,可使用Cl2/Ar等离子体来形成斜角蚀刻离子112,以选择性地蚀刻TiN掩模。若掩模形成层106为SiO2且掩模层为SiN,则可使用CHF3/O2来产生斜角蚀刻离子112。所述实施例并非仅限于此上下文。
转至图1C,其示出在完成对掩模层104的蚀刻之后的后续情形。由此,形成设置于基板基底102上的斜角掩模特征104A。斜角掩模特征104A表现出相对于基板100的主表面(由平行于X-Y平面的平面界定)的垂直线(Z轴)而言以非零倾斜角设置的一组侧壁。在各种非限制性实施例中,斜角掩模特征104A可沿Y轴具有50纳米、100纳米、500纳米、1000纳米的宽度。合适于光学光栅形成的宽度可在250纳米至750纳米范围内。所述实施例并非仅限于此上下文。斜角掩模特征104A的合适高度可为25纳米、50纳米、100纳米或更厚。在其中欲采用掩模层104作为用于溅镀蚀刻的掩模的一些实施例中,斜角掩模特征104A的厚度可甚至更大,例如200纳米、500纳米或1000纳米。所述实施例并非仅限于此上下文。
由此,可使用图1C所示结构在基板基底102中蚀刻斜角结构。值得注意,掩模形成层106的侧壁以与掩模层104的侧壁不同的角定向。根据本发明的各种实施例,可在蚀刻基板基底102之前移除掩模形成层106。转至图1D,其示出在移除掩模形成层106之后且在蚀刻基板基底102之前的后续情形。在此种配置中,在基板基底102上直接设置具有斜角掩模特征104A的层,而在斜角掩模特征104A上方则不存在其他结构。由此,斜角掩模特征104A的侧壁104B自基板基底102的外表面延伸至图1D所示结构的外表面。
转至图1E,示出其中在掩模104C就位的情况下对基板(意指基板基底102)执行蚀刻的后续情形。蚀刻是通过引导轨迹相对于主表面的垂直线(Z轴)以非零入射角布置的斜角离子115达成。由此,斜角离子115的轨迹可较沿垂直线引导的离子而言与侧壁104B更多地对齐。根据各种实施例,可将斜角离子115引导为具有平行于斜角掩模特征104A的侧壁104B的非零倾斜角的轨迹。举例而言,若侧壁104B相对于垂直线以30度定向,则可以相对于垂直线形成30度角的轨迹引导斜角离子115。通过此种方式,斜角离子115在对基板基底102的蚀刻期间可不撞击侧壁104B。因此,斜角离子115可在避免撞击掩模104C的其他表面的同时撞击水平面(平行于X-Y平面)。就此种意义而言,掩模104C可不遮蔽斜角离子115,而使得斜角掩模特征104A的间距及角能够复制在基板基底102中。
在其他实施例中,尽管并不严格平行,然而斜角离子115可形成准直离子束,所述准直离子束的轨迹具有在平行于侧壁104B的倾斜角+/-5度内的入射角,或者具有在平行于侧壁104B的倾斜角+/-10度内的入射角。此外,在一些实施例中,斜角离子115的轨迹可在入射角分布范围或角范围内分布,例如在10度、20度或30度的角范围内分布,其中平均轨迹或中位轨迹(或模式轨迹)平行于侧壁104B的倾斜角。在又一些实施例中,斜角蚀刻离子112可界定轨迹角范围(例如10度),其中平均轨迹或中位轨迹为相对于侧壁104B的倾斜角+5度。所述实施例并非仅限于此上下文。
在该些其中斜角离子的轨迹匹配侧壁104B的倾斜角或在侧壁104B的倾斜角的10度左右内的不同几何结构中,蚀刻几何结构将倾向于随着掩模104C腐蚀而保持原样或几乎保持原样。换言之,由于斜角离子115的轨迹被对齐成平行于或几乎平行于侧壁104B的角而使对斜角离子115的遮蔽最小化或消除,因此斜角蚀刻离子112会在蚀刻期间的不同情形处「看到(see)」掩模104C及基板基底102的相同部分。
转至图1F,其示出在通过斜角离子115完成对基板基底102的蚀刻之后的后续情形。如所示,在基板基底102中形成具有斜角侧壁的特征阵列(例如斜角结构114)。
转至图1G,其示出在移除掩模104C之后的后续情形。在图1H处,示出在图1G所示情形之后的又一情形,其中基板基底102设置于下方层116上。在一些情形中,下方层116可为另一基板,其中基板基底102(例如光学光栅)放置于下方层116上。在其他实施例中,在图1A-1G所示处理之前,下方层116可在基板100中设置于基板基底102之下。由此,图1H所示阶段处的基板100可表示光学光栅装置,其中基板基底102表示光学光栅层。值得注意,尽管基板基底102可为单一层,然而在其他实施例中,基板基底102可表示由不同材料构成的多个层。图1I示出其中基板基底102包括层102A及层102B的实施例。由此,斜角离子115可蚀刻延伸穿过层102A及层102B的连续斜角结构(被示为斜角结构117)。在一些实施例中,例如当层102A的组成物实质上不同于层102B的组成物时,可在用于蚀刻层102A的第一操作与用于蚀刻层102B的第二操作之间调整斜角离子115的组成物。
图2示出根据本发明实施例的使用斜角掩模形成斜角结构114的几何结构的细节。在图2中,将掩模104C与用于形成斜角光栅的掩模的已知结构(被示为掩模特征104D(以虚线表示))一起示出。掩模特征104D具有平行于Z轴定向的大体垂直的侧壁。图2示出以上论述的使用斜角离子112形成的斜角结构(包括由斜角掩模特征104A形成的斜角结构及由已知掩模特征(即掩模特征104D)形成的斜角光栅)的几何结构。
图2中所示斜角结构114与图1H中的斜角结构相同。值得注意,由于斜角蚀刻离子112平行于侧壁114A行进,因此斜角掩模特征104A的相邻特征之间的第一间距(被示为D1)可与斜角结构114的相邻结构之间的沟槽的宽度(亦被示为D1)相同。换言之,由掩模104C所界定的间距被保持在斜角结构114之间的间距中。此种对间距的保持亦意味着斜角掩模特征104A的宽度W1可与斜角结构114的宽度相同,且可随深度而保持恒定。
如图2中进一步示出,当使用矩形掩模特征形成斜角结构(意指掩模特征104D)时,所得斜角结构(被示为斜角结构118)通过较窄的一组沟槽(由间距D2示出)分隔开。此种较窄的间距是掩模特征104D遮蔽斜角离子115的结果。因此,斜角结构118沿Y轴较掩模特征104D更宽。因此,使用斜角掩模特征可保持用于在下方基板层中产生斜角结构的掩模的横向尺寸(在X-y平面中)。使用掩模特征104D的另一方面是改变在对层(例如基板基底102)的蚀刻期间发生的遮蔽。随着掩模特征104D沿Z轴在高度上腐蚀,对斜角蚀刻离子112的遮蔽将改变而使侧壁118A的实际倾斜将不保持恒定角,从而使侧壁会聚。
现在转至图3A,其示出以示意性形式示出的处理设备200。处理设备200表示用于选择性地蚀刻基板的部分(例如侧壁)的处理设备。处理设备200可为基于等离子体的处理系统,所述基于等离子体的处理系统具有用于通过如此项技术中已知的任何方便方法在其中产生等离子体204的等离子体室202。处理设备200可包括电源供应器230及气体供应器224。可如所示提供具有提取开孔208的提取板206,其中可执行选择性蚀刻以选择性地移除侧壁层。基板(例如具有如在图1B处示出的前述结构的基板100)设置于处理室222中。基板100的基板平面由所示笛卡尔坐标系的X-Y平面表示,同时基板100的平面的垂直线沿着Z轴(Z方向)。
在指向性蚀刻操作期间,如所示经由提取开孔208提取斜角离子束210。如在已知系统中一样,斜角离子束210可在使用偏压电源220在等离子体室202与基板100之间施加电压差时提取。偏压电源220可耦合至例如处理室222,其中处理室222与基板100保持于相同的电位处。在各种实施例中,如在已知系统中一样,斜角离子束210可被提取为连续束或脉冲离子束。举例而言,偏压电源220可被配置成作为脉冲直流(direct current,DC)电压在等离子体室202与处理室222之间供应电压差,其中脉冲电压的电压、脉冲频率及负载循环可彼此独立地调整。
通过沿扫描方向216相对于提取开孔208且因此相对于斜角离子束210扫描包括基板100的基板台214,斜角离子束210可例如使用以上论述的掩模104C蚀刻结构的目标表面。在各种实施例中,斜角掩模特征104A可当此种结构被定向为例如垂直于扫描方向216(如图3B中进一步示出)时伸长,以如所示沿X轴延伸。在各种实施例中,举例而言,斜角离子束210可作为具有沿图3B中所示笛卡尔坐标系的X方向延伸的长轴的带状离子束来提供。基板100可被布置成例如其中带状束的长轴平行于斜角掩模特征104A的长轴,且其中斜角掩模特征104A的倾斜角(相对于Z轴)匹配斜角离子束210的斜角离子的入射角。通过此种方式,可产生在剖视图上如图1H中所示般造型的一系列细长结构。可为耦合用于向等离子体室202提供多种不同气体的气体歧管。在特定实施例中,斜角离子束210及其他反应性物质可作为蚀刻配方提供至基板100,以便如上所述使用斜角掩模执行对基板层的斜角反应性离子蚀刻。蚀刻配方可相对于掩模104C的材料及以上论述的基板基底102的材料为选择性的。
在图3B所示实例中,斜角离子束210被作为沿X方向延伸至束宽度的带状离子束提供,其中束宽度足以暴露出基板100的整体宽度,甚至在沿X方向的最宽部分处亦如此。示例性束宽度可介于10厘米、20厘米、30厘米或大于30厘米范围内,而沿Y方向的示例性束长度可介于3毫米、5毫米、10毫米或20毫米范围内。所述实施例并非仅限于此上下文。
如亦在图3B中指示,基板100可在扫描方向216上进行扫描,其中扫描方向216位于X-Y平面中(例如沿Y方向)。值得注意,扫描方向216可表示沿Y方向在两个相反(180度)方向上对基板100的扫描,或者仅表示朝左的扫描或朝右的扫描。如图3B中所示,斜角离子束210的长轴沿X方向垂直于扫描方向216延伸。因此,当如图3B中所示对基板100的扫描沿扫描方向216自基板100的左侧至右侧进行至足够的长度时,基板100的整体可暴露于斜角离子束210。
转至图4,其示出根据本发明各种实施例的制程流程400。在方块402处,在基板上沈积掩模层。基板可包括基板基底,其中掩模层直接沈积于基板基底上。根据不同的实施例,基板基底可包括一个层或多个层。在一些实例中,掩模层可为包括氮化物、氧化物、碳材料或其他材料在内的硬掩模材料。一般而言,掩模层的材料可与直接位于掩模层下方的基板基底的材料不同。
在方块404处,在掩模层上沈积掩模形成层。掩模形成层的材料可与掩模层的材料不同,例如为氧化物,而掩模层则为氮化物。所述实施例并非仅限于此上下文。
在方块406处,在掩模形成层上沈积图案化层,其中图案化层由与掩模形成层不同的材料形成。作为实例,图案化层可为光刻胶层。所述实施例并非仅限于此上下文。
在方块408处,在图案化层中形成图案化特征。举例而言,可使用已知的光刻技术形成图案化特征。图案化特征可用于将位于图案化特征下方的掩模形成层图案化。
在方块410处,使用图案化特征在掩模层中蚀刻斜角掩模特征。用于形成斜角掩模特征的蚀刻可为反应性离子蚀刻制程。在一些实例中,斜角掩模特征可通过在反应性斜角离子束蚀刻制程中使用反应性斜角离子(例如使用带状束蚀刻斜角掩模特征)来形成。根据一些实施例,反应性离子蚀刻气体混合物可相对于图案化层及基板基底选择性地蚀刻掩模层,此意指掩模层较位于掩模层上方或下面的层更快地蚀刻。由此,下方的基板基底可暴露于斜角掩模特征之间。
在方块412处,移除掩模形成层。
在方块414处,在斜角掩模特征就位的情况下蚀刻基板(例如基板基底)。蚀刻可通过引导轨迹相对于主表面的垂直线以非零入射角布置(意指轨迹相对于主表面跨越小于九十度的范围,例如5度至75度)的离子来执行。在一些实施例中,离子可在合适于较佳地相对于斜角掩模特征蚀刻基板的材料的已知反应性离子蚀刻混合物中提供。在其他实施例中,离子可作为惰性气体离子或其他离子提供,其中离子在非反应性蚀刻环境中通过物理溅镀来蚀刻基板。由此,离子可在基板中蚀刻斜角结构,其中斜角结构仿效斜角掩模特征的大小及侧壁倾斜度。
综上所述,本文中所述各种实施例提供用于在基板中形成例如光学光栅、通孔、沟槽或其他结构等斜角结构的方式。本发明实施例提供优于形成斜角特征的已知方式的各种优点。一个优点是,通过使用斜角掩模特征与和斜角掩模特征对齐的斜角离子蚀刻的组合,欲在基板中形成的斜角结构的期望尺寸可更可靠地得到保持。另一优点是,由于可使用物理溅镀替代反应性离子蚀刻,因此本发明实施例便于在难以进行反应性蚀刻的材料中蚀刻斜角结构。由于离子的轨迹可被对齐成平行于斜角掩模特征的侧壁,因此离子的轨迹可随着蚀刻进行保持平行于斜角掩模特征的侧壁。因此,斜角掩模的厚度可在不影响蚀刻的几何结构的条件下增大,以防止硬掩模在物理溅镀以能够与基板的蚀刻速率相当的速率蚀刻所述硬掩模的情形中完全耗损。
本发明的范围不受限于本文所述具体实施例。实际上,通过阅读前述说明及附图,除本文中所述者外,本发明的其他各种实施例及对本发明的润饰亦将对此项技术中技术人员显而易见。因此,此种其他实施例及润饰旨在落于本发明的范围内。此外,本文中已在特定实施方案的上下文中在特定环境下出于特定目的阐述了本发明。本领域的普通技术人员将认识到有用性并非仅限于此,且本发明可在任何数目的环境下出于任何数目的目的有利地实施。因此,以下所说明的权利要求要以本文所述本发明的全部广度及精神进行解释。
Claims (15)
1.一种在基板中形成斜角结构的方法,包括:
通过在设置于所述基板的基板基底上的掩模层中蚀刻斜角掩模特征而形成掩模,所述斜角掩模特征具有相对于所述基板的主表面的垂直线以非零倾斜角定向的侧壁;以及
在所述掩模就位的情况下蚀刻所述基板,所述蚀刻包括引导轨迹相对于所述主表面的垂直线以非零入射角布置的离子。
2.根据权利要求1所述的方法,
其中所述掩模层中的所述斜角掩模特征界定在所述斜角掩模特征的相邻特征之间的第一间距,且其中所述斜角结构界定在所述斜角结构的相邻结构之间的沟槽的宽度,所述宽度等于所述第一间距。
3.根据权利要求1所述的方法,其中所述非零入射角平行于所述非零倾斜角,其中所述斜角结构包括平行于所述掩模层的所述斜角掩模特征的一组侧壁的斜角侧壁。
4.根据权利要求1所述的方法,其中蚀刻所述基板包括在对所述基板的反应性离子蚀刻中引导反应性斜角离子,其中所述基板被相对于所述掩模层选择性地蚀刻。
5.根据权利要求1所述的方法,其中蚀刻所述基板包括在非反应性蚀刻环境下引导斜角离子以溅镀蚀刻所述基板。
6.根据权利要求1所述的方法,其中形成所述掩模包括:
在所述掩模层上沈积掩模形成层;
在所述掩模形成层中形成图案化特征阵列;以及
将斜角蚀刻离子引导至所述掩模形成层中的开口,其中所述斜角掩模特征形成于所述掩模层中。
7.根据权利要求6所述的方法,还包括在蚀刻所述基板之前移除所述掩模形成层。
8.根据权利要求1所述的方法,其中所述斜角掩模特征伸长以在所述基板的所述主表面内沿第一方向延伸,且其中蚀刻所述基板包括使用斜角离子束经由所述掩模层指向地蚀刻所述基板,其中所述斜角离子束包括带状束,所述带状束具有平行于所述第一方向延伸的长轴。
9.根据权利要求1所述的方法,其中所述斜角结构形成光学光栅。
10.一种形成光学光栅的方法,包括:
提供基板,所述基板包括光栅层;
在所述基板上沈积掩模层;
通过在所述掩模层中蚀刻斜角掩模特征而形成掩模,所述斜角掩模特征具有相对于所述基板的主表面的垂直线以非零倾斜角定向的侧壁;以及
在所述掩模就位的情况下蚀刻所述光栅层,所述蚀刻包括引导轨迹相对于所述主表面的垂直线以非零入射角布置且平行于所述非零倾斜角的离子。
11.根据权利要求11所述的方法,其中蚀刻所述光栅层产生具有斜角侧壁的多个斜角结构,所述斜角侧壁平行于所述掩模层的所述斜角掩模特征的一组侧壁。
12.根据权利要求11所述的方法,其中蚀刻所述基板包括在对所述基板的反应性离子蚀刻中引导反应性斜角离子,其中所述基板被相对于所述掩模层选择性地蚀刻。
13.根据权利要求11所述的方法,其中蚀刻所述基板包括在非反应性蚀刻环境下引导斜角离子以溅镀蚀刻所述基板。
14.根据权利要求11所述的方法,其中形成所述掩模包括:
在所述掩模层上沈积掩模形成层;
在所述掩模形成层中形成图案化特征阵列;以及
将斜角蚀刻离子引导至所述掩模形成层中的开口,其中形成所述掩模层中的所述斜角掩模特征。
15.一种在基板中形成斜角结构的方法,包括:
提供基板;
在所述基板上沈积掩模层;
在所述掩模层的外表面上沈积掩模形成层;
在所述掩模形成层就位的情况下在所述掩模层中蚀刻斜角掩模特征;
自所述掩模层的所述外表面移除所述掩模形成层;以及
在移除所述掩模形成层之后,在所述掩模就位的情况下蚀刻所述基板,所述蚀刻包括引导轨迹相对于所述基板的主表面的垂直线以非零入射角布置的离子。
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