CN112752637A - GaN基板的切断方法 - Google Patents

GaN基板的切断方法 Download PDF

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Publication number
CN112752637A
CN112752637A CN201980063202.1A CN201980063202A CN112752637A CN 112752637 A CN112752637 A CN 112752637A CN 201980063202 A CN201980063202 A CN 201980063202A CN 112752637 A CN112752637 A CN 112752637A
Authority
CN
China
Prior art keywords
scribing
gan substrate
cutting
line
wheel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201980063202.1A
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English (en)
Chinese (zh)
Inventor
浅井义之
北市充
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsuboshi Diamond Industrial Co Ltd
Original Assignee
Mitsuboshi Diamond Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsuboshi Diamond Industrial Co Ltd filed Critical Mitsuboshi Diamond Industrial Co Ltd
Priority to CN202310693858.XA priority Critical patent/CN116690814A/zh
Publication of CN112752637A publication Critical patent/CN112752637A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Dicing (AREA)
  • Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
CN201980063202.1A 2018-09-28 2019-08-26 GaN基板的切断方法 Pending CN112752637A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310693858.XA CN116690814A (zh) 2018-09-28 2019-08-26 GaN基板的切断方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018-184654 2018-09-28
JP2018184654 2018-09-28
PCT/JP2019/034318 WO2020066467A1 (ja) 2018-09-28 2019-08-26 ＧａＮ基板の分断方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202310693858.XA Division CN116690814A (zh) 2018-09-28 2019-08-26 GaN基板的切断方法

Publications (1)

Publication Number Publication Date
CN112752637A true CN112752637A (zh) 2021-05-04

Family

ID=69950537

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201980063202.1A Pending CN112752637A (zh) 2018-09-28 2019-08-26 GaN基板的切断方法
CN202310693858.XA Pending CN116690814A (zh) 2018-09-28 2019-08-26 GaN基板的切断方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202310693858.XA Pending CN116690814A (zh) 2018-09-28 2019-08-26 GaN基板的切断方法

Country Status (5)

Country Link
JP (1) JP7137242B2 (ko)
KR (1) KR102501898B1 (ko)
CN (2) CN112752637A (ko)
TW (1) TWI837150B (ko)
WO (1) WO2020066467A1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2023139902A1 (ko) * 2022-01-21 2023-07-27

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06283758A (ja) * 1993-03-25 1994-10-07 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体ウエハーの切断方法
CN102275229A (zh) * 2010-06-14 2011-12-14 三星钻石工业股份有限公司 脆性材料基板的切割方法
JP2013059911A (ja) * 2011-09-13 2013-04-04 Fukuoka Univ スクライブ装置
JP2013062372A (ja) * 2011-09-13 2013-04-04 Fukuoka Univ デバイスウェハ及びデバイスウェハの切断方法
TW201446675A (zh) * 2013-06-10 2014-12-16 Taiwan Mitsuboshi Diamond Ind Co Ltd 切割方法及切割設備
JP2015019054A (ja) * 2013-06-13 2015-01-29 パナソニックＩｐマネジメント株式会社 窒化物半導体結晶から形成されている平板の表面に溝を形成する方法
JP2017024349A (ja) * 2015-07-27 2017-02-02 三星ダイヤモンド工業株式会社 脆性材料基板における垂直クラックの形成方法および脆性材料基板の分断方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5210355B2 (ja) * 2010-06-14 2013-06-12 三星ダイヤモンド工業株式会社 脆性材料基板のスクライブ方法
CN106626106A (zh) 2011-01-07 2017-05-10 坂东机工株式会社 用于刻划碳化硅板的方法和设备
JP5884852B2 (ja) 2014-04-18 2016-03-15 坂東機工株式会社 炭化珪素板のスクライブ方法及びスクライブ装置
KR20170039143A (ko) * 2014-08-04 2017-04-10 아사히 가라스 가부시키가이샤 무알칼리 유리판의 절단 방법, 디스플레이 패널의 절단 방법, 무알칼리 유리판의 제조 방법, 및 디스플레이 패널의 제조 방법
JP2016069223A (ja) * 2014-09-30 2016-05-09 三星ダイヤモンド工業株式会社 ブレイク方法並びにブレイク装置
JP2016108167A (ja) * 2014-12-03 2016-06-20 三星ダイヤモンド工業株式会社 スクライビングツールおよびスクライブ装置
JP6682907B2 (ja) * 2016-02-26 2020-04-15 三星ダイヤモンド工業株式会社 脆性基板の分断方法
JP2018086785A (ja) 2016-11-29 2018-06-07 三星ダイヤモンド工業株式会社 スクライビングホイール及びそのスクライブ方法
CN207789366U (zh) * 2018-01-03 2018-08-31 北京京东方光电科技有限公司 切割刀轮

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06283758A (ja) * 1993-03-25 1994-10-07 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体ウエハーの切断方法
CN102275229A (zh) * 2010-06-14 2011-12-14 三星钻石工业股份有限公司 脆性材料基板的切割方法
JP2013059911A (ja) * 2011-09-13 2013-04-04 Fukuoka Univ スクライブ装置
JP2013062372A (ja) * 2011-09-13 2013-04-04 Fukuoka Univ デバイスウェハ及びデバイスウェハの切断方法
TW201446675A (zh) * 2013-06-10 2014-12-16 Taiwan Mitsuboshi Diamond Ind Co Ltd 切割方法及切割設備
JP2015019054A (ja) * 2013-06-13 2015-01-29 パナソニックＩｐマネジメント株式会社 窒化物半導体結晶から形成されている平板の表面に溝を形成する方法
JP2017024349A (ja) * 2015-07-27 2017-02-02 三星ダイヤモンド工業株式会社 脆性材料基板における垂直クラックの形成方法および脆性材料基板の分断方法

Also Published As

Publication number Publication date
TWI837150B (zh) 2024-04-01
KR102501898B1 (ko) 2023-02-20
KR20210049875A (ko) 2021-05-06
CN116690814A (zh) 2023-09-05
TW202026472A (zh) 2020-07-16
JP7137242B2 (ja) 2022-09-14
WO2020066467A1 (ja) 2020-04-02
JPWO2020066467A1 (ja) 2021-08-30

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